Study of Formation Conditions and Characteristics of Carbon-containing Particles Produced from ortho-Xylene by Aerosol-Assisted Chemical Vapor Deposition

Some fundamental aspects of the aerosol-assisted chemical vapor deposition of carbon-containing nanoparticles from an aerosol of ortho-xylene are described, including the influence exerted by the pyrolysis temperature and flow rate of the carrier-gas on the size characteristics, structure, and composition of the products being formed. It was shown that the shape, size, and structure of particles are determined by processes occurring in the pyrolysis zone, and its temperature is the most important technological parameter, together with the residence time in the reaction zone of products formed in the decomposition of ortho-xylene. The results obtained are of practical importance and form a basis for development of technology and equipment for producing carboncontaining nanoparticles from an aerosol of ortho-xylene.

     

On the Correlation Between Deposition Rate and Process Parameters in Remote Plasma-Enhanced Chemical Vapor Deposition

Plasma-enhanced chemical vapor deposition has become one of the most important thin film deposition technologies. To avoid direct plasma exposure the substrates may be placed in the remote region. A carrier gas conveys the plasma energy to the deposition area where the reactions with the monomer molecules take place. For the engineering of such a process the modeling of the achievable deposition rate is of great interest. Among different possibilities semiempirical models provide a fast and easily utilizable tool without intensive computer simulations or the necessity of detailed knowledge about the chemistry involved. From deposition experiments with oxygen and an organosilicon monomer (hexamethyldisiloxane, HMDSO) the remote composite parameter is suggested. It combines microwave power, monomer and carrier gas flow rate, and the distance of the substrate from the plasma source. This parameter was derived from the ratio between atomic oxygen and monomer flow rate. In the parameter range considered the deposition rate is described as well ordered and the energy- and monomer-deficient regions are clearly separated.     

Manufacturing Graphene-Encapsulated Copper Particles by Chemical Vapor Deposition in a Cold Wall Reactor

Functional fillers, such as Ag, are commonly employed for effectively improving the thermal or electrical conductivity in polymer composites. However, a disadvantage of such a strategy is that the cost and performance cannot be balanced simultaneously. Therefore, the drive to find a material with both a cost efficient fabrication process and excellent performance attracts intense research interest. In this work, inspired by the core–shell structure, we developed a facile manufacturing method to prepare graphene-encapsulated Cu nanoparticles (GCPs) through utilizing an improved chemical vapor deposition (CVD) system with a cold wall reactor. The obtained GCPs could retain their spherical shape and exhibited an outstanding thermal stability up to 179 °C. Owing to the superior thermal conductivity of graphene and excellent oxidation resistance of GCPs, the produced GCPs are practically used in a thermally conductive adhesive (TCA), which commonly consists of Ag as the functional filler. Measurement shows a substantial 74.6 % improvement by partial replacement of Ag with GCPs.     

Laser-Assisted Chemical Vapor Deposition of Boron

Ar⁺ laser-induced chemical vapor deposition (LCVD) of B from gaseous mixtures of BCl₃ and H₂ has been investigated for temperatures between 1000 K and 2250 K and for partial pressure within the ranges 25 mbar ≤ p(BCI₃) ≤ 800 mbar and 10 mbar ≤p(H₂) ≤ 400 mbar. For the lowest temperatures, deposition is controlled by the chemical kinetics which, with p(BCI₃) = p(H₂) = 100 mbar, is characterized by an apparent chemical activation energy of about 26.5 kcal/mol. In this regime, the deposited boron is amorphous. At high temperatures, deposition becomes limited by gas-phase transport and polycrystalline boron with βrhombohedral structure is obtained.     

蓝宝石衬底上化学气相沉积法生长石墨烯

化学气相沉积(CVD)法是制备大面积、高质量石墨烯材料的主要方法之一,但存在衬底转移和碳固溶等问题,本文选用蓝宝石衬底弥补了传统CVD法的不足。利用CVD法在蓝宝石衬底上生长石墨烯材料,研究生长温度对石墨烯表面形貌和晶体质量的影响。原子力显微镜(AFM)、光学显微镜(OM)、拉曼光谱和霍尔测试表明,低温生长有利于保持材料表面的平整度,高温生长有利于提高材料的晶体质量。研究氢气和碳源对蓝宝石衬底表面刻蚀作用机理,发现氢气对蓝宝石衬底有刻蚀作用,而单纯的碳源不能对衬底产生刻蚀效果。在1200 ℃下,直径为50 mm的晶圆级衬底上获得平整度和质量相对较好的石墨烯材料,室温下载流子迁移超过1000 cm²·V^-1·s^-1。     

Chemical Vapor Deposition Synthesis of Large-Area Graphene Films

Graphene films were synthesized with the method of chemical vapor deposition using gaseous methane as the source of carbon and copper foil as the substrate for the deposition. The following conditions were found optimal to grow large-area high quality graphene films: preliminary annealing of the foil in the argon/hydrogen mixture at 970–990 °С for 30–40 min; simultaneous supply of the argon/hydrogen mixture (100 cm³/min) and methane (10 cm³/min) for 5–10 minutes, and subsequent cooling in an inert atmosphere. As a result, 1–10 layered graphene films were obtained to fully coat the copper foil over the area up to 50 cm². Several methods have been developed to transfer graphene to dielectric substrates such as silicon oxide and flexible polymer films. The obtained graphene films were used to create a flexible transparent conductive touch panel and a highly sensitive resistive humidity sensor exhibiting fast response-recovery time.     

聚酰亚胺上催化剂增强化学气相沉积钯-铂双层膜

 以N2和O2为载气,采用催化剂增强化学气相沉积法于聚酰亚胺上获得了Pt和Pd-Pt双层金属薄膜. 当使用Pd(hfac)2和PtMe2(COD)为前驱体,在同一反应器内共沉积时,只有Pt被沉积. 金属Pd和Pt顺序沉积可形成Pd-Pt双层膜.     

聚砜上催化剂增强化学气相沉积钯-铂双层纳米膜

以N2和O2作载气,采用催化剂增强化学气相沉积法在聚砜上获得了Pt和Pd-Pt双层金属纳米薄膜.当使用Pd(hfac)2和Pt(COD)Me2为前驱体在同一反应器内共沉积时,只有Pt被沉积,铂和钯顺序沉积可以得到双层膜.聚砜上金属钯和铂微粒尺度为15~30 nm,双层膜厚度为120~180 nm.     

化学气相沉积法制备氮化钛

本文以氮化钛的CVD制备为例,说明了源物质的选择对CVD过程的影响.在此基础上,综述了化学气相沉积技术在材料制备领域的最新进展.     

单晶硅上化学气相沉积铜薄膜的机理研究

A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu(hfac)2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode (island), and then transforms to Stranski-Rastanov mode (layer-by-layer plus island).The mechanism of Cu nucleation on silicon (100) substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu(hfac) formed by the thermal dissociation of Cu(hfac)2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu(hafc)2 and H2 occurs.     

Single-Source Precursors for the Chemical Vapor Deposition of Iron Germanides

Binary iron-germanium phases are promising materials in magnetoelectric, spintronic or data storage applications due to their unique magnetic properties. Previous protocols for preparation of Fe_xGe_y thin films and nanostructures typically involve harsh conditions and are challenging in terms of phase composition and homogeneity. Herein, we report the first example of single source chemical vapor deposition (CVD) of Fe_xGe_y films. The appreciable volatility of [Ge[Fe₂(CO)₈]₂], [Cl₂GeFe(CO)₄]₂ and ^Me₂iPr₂NHC ⋅ GeCl₂ ⋅ Fe(CO)₄ allowed for their application as precursors under standard CVD conditions (^Me₂iPr₂NHC=1,3-diisopropoyl-4,5-dimethylimidazol-2-ylidene). The thermal decomposition products of the precursors were characterized by TGA and powder XRD. Deposition experiments in a cold-wall CVD reactor resulted in dense films of Fe_xGe_y. During the optimization of synthetic conditions for precursor preparation the new iron-germanium cluster Cl₂Ge[Fe₂(CO)₈]Ge[Fe₂(CO)₈] was obtained in experiments with a higher stoichiometric ratio of GeCl₂ ⋅ 1,4-dioxane vs. Fe₂(CO)₉.     

石墨烯纤维材料的化学气相沉积生长方法

石墨烯纤维材料是以石墨烯为主要结构基元沿某一特定方向组装而成或由石墨烯包覆纤维状基元形成的宏观一维材料。根据组成基元的不同可将石墨烯纤维材料分为石墨烯纤维和石墨烯包覆复合纤维。石墨烯纤维材料在一维方向上充分发挥了石墨烯高强度、高导电、高导热等特点,在智能纤维与织物、柔性储能器件、便携式电子器件等领域具有广阔的应用前景。随着化学气相沉积(Chemical Vapor Deposition,CVD)制备石墨烯薄膜技术的发展,CVD技术也逐渐应用于石墨烯纤维材料的制备。利用CVD法制备石墨烯纤维可避免传统纺丝工艺中繁琐的氧化石墨烯(Graphene Oxide,GO)还原过程。同时,通过CVD法直接将石墨烯沉积至纤维表面可以保证石墨烯与纤维基底之间强的粘附作用,提高复合纤维的稳定性,同时可实现对石墨烯质量的有效调控。本文综述了石墨烯纤维材料的CVD制备方法,石墨烯纤维材料优异的力学、电学、光学性质及其在智能传感、光电器件、柔性电极等领域的应用,并展望了CVD法制备石墨烯纤维材料未来的发展方向。     

Aerosol-Assisted Plasma Deposition of Hydrophobic Polycations Makes Surfaces Highly Antimicrobial

The currently used multistep chemical synthesis for making surfaces antimicrobial by attaching to them hydrophobic polycations is replaced herein by an aerosol-assisted plasma deposition procedure. To this end, N,N-hexyl,methyl-PEI (HMPEI) is directly plasma-coated onto a glass surface. The resultant immobilized HMPEI coating has been thoroughly characterized and shown to be robust, bactericidal against Escherichia coli, and virucidal against human influenza virus.     

类石墨烯二硫化钨薄膜的化学气相沉积法制备及其应用

类石墨烯过渡金属硫属化合物如MoS₂、WS₂、MoSe₂、WSe₂等因为具有层数依赖的带隙结构而受到了广泛关注。尤其是本征态的WS₂为双极性半导体,它同时具有n型和p型电输运特性,有望在电子电路、存储器件、光电探测和光伏器件方面得以广泛应用。近年来,化学气相沉积技术已经被广泛用于制备大面积二维硫属化合物(如MoS₂, MoSe₂, WS₂ 和WSe₂)原子层薄膜。目前关于其他二维材料体系的综述文献介绍较多,但是针对WS₂介绍的综述文献还鲜有报道。因此,本文综述了类石墨烯WS₂薄膜的化学气相沉积法制备和相关器件的国内外研究进展,讨论了WS₂薄膜的化学气相沉积法制备机理及生长因素如硫粉含量、载气的成分、反应温度、基底材料等对薄膜成膜质量的影响,介绍了WS₂薄膜在晶体管、光电器件及与其他二维材料构成的异质结构器件的最新研究成果,并对可能存在的问题进行了分析和述评。     

沉积温度对等离子增强化学气相沉积法制备的SiNx:H薄膜特性的影响

利用Centrotherm公司生产的管式等离子增强化学气相沉积(PECVD)设备在p型抛光硅片表面沉积SiN_x:H薄膜, 研究沉积温度对SiN_x:H薄膜的组成及光学特性、结构及表面钝化特性的影响. 然后采用工业化的单晶硅太阳电池制作设备和工艺制作太阳电池, 研究不同温度制备的薄膜对电池电性能的影响. 测试结果表明: SiN_x:H薄膜的折射率随着沉积温度的升高而变大, 分布在1.926-2.231之间, 这表明Si/N摩尔比随着沉积温度的增加而增加; 当沉积温度增加时, 薄膜中Si－H键和N－H键浓度呈现减小趋势, 而Si－N键浓度逐渐升高, 薄膜致密度增加; 随着沉积温度的升高, SiN_x:H薄膜中的氢析出导致了钝化硅片的有效少子寿命先升高后降低, 并且有效少子寿命出现明显的时间衰减特性. 当沉积温度为450 °C时, 薄膜具有最优的减反射和表面钝化效果. 采用不同温度PECVD制备的5组电池的电性能测试结果也验证了这一结果.     

Chemical Composition and Structure of Thin Films Produced by Chemical Vapor Deposition

This paper reports results from studies of the chemical composition and structure of semiconducting, dielectric, and metallic films produced from molecular precursors by the chemical vapor deposition method. A study was made of films of zinc sulfides, mixed copper, cadmium, and zinc sulfides, boron nitride, carbonitride, silicon carbonitride, and iridium films. It is shown that the use of metal compounds with different ligands (zinc and manganese) enables production of zinc sulfide films in which manganese ions are uniformly incorporated into the zinc sulfide crystal lattice to substitute zinc at the lattice sites. For the films of simple and mixed cadmium, copper, and zinc sulfides, the film structure depends on the type of substrate. The thin layers of mixed cadmium and zinc sulfides are asubstitution solution with a hexagonal structure. The thin layers of boron nitride produced from borazine exhibit a nanocrystalline structure and are a mixture of cubic and hexagonal phases. Composite layers were produced from alkylamine boranes and their mixtures with ammonia. Depending on synthesis conditions, the layers are mixtures of hexagonal boron nitride, carbide, and carbonitride or pure boron nitride. Using silyl derivatives of asymmetric dimethylhydrazine containing Si—N and C—N bonds in the starting molecule, we produced silicon carbonitride films whose crystal habit belongs to a tetragonal structure with lattice parameters a = 9.6 and c = 6.4 . The iridium films obtained by thermal decomposition of iridium trisacetylacetonate(III) on quartz substrates in the presence of hydrogen have a polycrystalline structure with crystallite sizes of 50 to 500 . A method for determining grainsize composition was proposed, and grain shapes for the iridium films were analyzed. The influence of substrate temperature on the internal microstructure and growth of the iridium films is demonstrated. At the iridium–substrate interface, a transition layer forms, whose composition depends on the substrate material and deposition conditions.     

退火对MgxZn1-xO薄膜特性的影响

采用MOCVD法在c面蓝宝石衬底上生长出了高质量的MgxZn1-xO薄膜. 研究了退火对MgxZn1-xO薄膜各种特性的影响. 将样品分别在真空和氧气中退火1 h. X射线衍射研究发现, 在真空中, 尤其是在氧气中退火的样品的(002)峰均增强. 由原子力显微镜观察发现, 在真空中退火样品的表面与未退火样品的表面几乎相同, 而在氧气中退火后样品的表面变得光滑了很多. 从光致发光光谱中发现, 真空退火后的样品的紫外光谱峰显著增强, 而深能级发射峰几乎消失. 在氧气中退火后样品的紫外光谱峰减弱而深能级发射峰显著增强. 所以退火对MgxZn1-xO薄膜的各种性质具有重要的影响, 通过退火可调节MgxZn1-xO的晶体质量与光学质量.     

Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition

Homoepitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition (CVD) with SiHCl₃ (TCS)–H₂–Ar gas mixtures. The addition of a small amount of H₂ has been found to not only modify the film structure from polycrystalline to epitaxial but also effectively improve the deposition efficiency and film purity by removing Cl in the form of HCl. However, an excess introduction of H₂ decreases the deposition efficiency owing to the shrinkage of the plasma flame. On the other hand, an increase in TCS flow rate increases the epitaxial deposition rate despite exhibiting a saturating tendency, while the material yield tends to decrease gradually due possibly to an increase in the Cl atoms. Also, we observed a critical limit in the TCS flow rate for epitaxial growth, beyond which a polycrystalline film resulted. However, when RF input power was increased, not only the upper limit of TCS flow rate for epitaxy was extended but also the deposition yield was improved so that the deposition rate reached ~700 nm/s with the material yield of >50 % at 30 kW input power with an H₂/TCS ratio of 1.5. Additionally, high input power is found to be beneficial to decrease Cl atom incorporation into the film and improve the Hall mobility of the films. An epitaxial film with a Cl atom concentration of less than 3 × 10¹⁶ cm^?3 and a Hall mobility as high as 250 cm²/(V·s) was obtained at 30 kW input power.     

催化增强化学蒸气沉积法在聚酰亚胺上沉积钯-铂合金薄层

以N₂，O₂作载气，通过催化增强化学蒸气沉积(CECVD)分别制得在聚酰亚胺上的金属铂、钯及其合金薄层。铂、钯配合物的共同沉积可生成Pt-Pd合金薄膜。在Pd-Pt合金的沉积过程中，Pd/Pt的原子数比率随共同沉积的条件改变而变化。O₂为载气、300 ℃条件下,用Pd(η³-allyl)(hfac)和Pt(COD)Me₂作前驱体共沉积制备Pd-Pt合金，得到含Pd 37.2%，Pt 62.8%且不     

化学气相沉积法制备氧化锡自组装纳米结构

采用化学气相沉积法在镀有5-10 nm厚金膜的SiO2衬底上, 通过控制生长条件, 实现了二氧化锡纳米结构的自组装生长, 成功制备出了莲花状和菊花状的二氧化锡自组装纳米结构. 利用扫描电子显微镜、X射线衍射等表征分析手段对样品的表面形貌、结构及成份进行表征和研究. 并在此基础上, 讨论了两种自组装纳米结构的生长机制.