纳秒脉冲放电对聚对苯二甲酸乙二酯憎水改性

基于自主研制的ns脉冲电源(上升沿约70ns,脉宽约100ns)激励介质阻挡放电产生大气压低温等离子体,在CF4气氛下对聚对苯二甲酸乙二酯(PET)表面进行了憎水改性处理,测量了改性前后的薄膜表面的水接触角,给出了CF4气流量、放电电压、处理时间和CF4比例等参数对改性效果的影响规律。结果表明,大气压ns脉冲DBD表面处理能够实现PET材料的憎水性,改性后的PET表面水接触角由66°提高到最大100°。     

双离子束溅射中红外SiO2薄膜热稳定性研究

通过双离子束溅射方法在蓝宝石、硅衬底上制备了单层SiO2薄膜,分析了SiO2薄膜残余应力、表面形貌、微观结构以及光学性能(可见-近红外0.4~1.2 μm和中红外3~5 μm波段)在400 ℃~1 000 ℃温度范围内的演化规律.研究结果表明:在400 ℃附近,SiO2薄膜残余应力存在局部极小值;SiO2薄膜光学性能的演化与膜层表面质量、内部残余应力及微观结构变化密切相关;经1 000 ℃高温处理后,蓝宝石窗口表面SiO2薄膜红外透射性能仍能保持很好的稳定性,且膜层表面没有出现显著的气泡、开裂等损伤形貌.该研究结果可为恶劣环境下光学窗口头罩表面薄膜系统的设计提供指导.     

在有机玻璃上射频溅射ITO组合薄膜

利用射频磁控溅射技术在有机玻璃表面上一次完成表面活化、ITO膜制备、SiO2 减反射膜制备过程。利用低能等离子体对有机玻璃表面进行改性以提高ITO膜的附着力。研究了氧分压等工艺参数对ITO膜导电性能及光学性能的影响。     

交流和纳秒脉冲Ar/H2O介质阻挡放电聚丙烯材料表面亲水改性对比研究

为了提高等离子体对聚合物材料表面处理的应用效果,优化亲水处理的条件,研究了交流和纳秒脉冲氩气介质阻挡放电（DBD）中添加适量H₂O,对聚丙烯（PP）亲水改性的处理效果。利用电学和光学诊断方法,系统地对比了交流DBD和纳秒脉冲DBD的放电特性,结果表明,纳秒电源驱动DBD具有更高的放电瞬时功率,更好的放电均匀性和更高的能量效率。通过测量不同水蒸气含量下DBD的OH发射光谱强度,确定了PP材料亲水性处理中H₂O添加的最优含量。利用交流和纳秒脉冲电源驱动DBD分别对PP材料进行亲水改性的处理,测量了不同条件下改性处理后的表面水接触角,并利用原子力显微镜（AFM）和傅里叶红外光谱（FTIR）分别对处理前后PP材料的表面物理形貌和表面化学成分进行分析。结果发现,经DBD处理后PP材料的水接触角明显降低,表面粗糙度明显增大,表面的亲水性含氧基团,羟基（?OH）和羰基（C=O）的数量大幅增加。相比交流电源,纳秒脉冲DBD处理的改性效果更好,其处理后的材料表面水接触角,比交流DBD处理的低5°左右,表面粗糙度也有所提升。而水蒸气的加入可使PP材料的表面水接触角进一步减小4°左右,表面粗糙度明显提升。研究结果为优化DBD聚合物材料表面改性实验条件及处理的效果提供了重要的参考依据。     

臭氧化法表面改性聚苯乙烯薄膜

 为增强聚苯乙烯(PS)与聚乙烯醇(PVA)之间的结合力,进而提高PS-VA双层空心微球存活率。利用臭氧化改性法在酸性介质中对聚苯乙烯薄膜进行表面改性,用红外光谱对处理后的表面进行了半定量的分析。结果表明：改性过后聚苯乙烯表面产生羟基、羰基等极性基团;接触角测试证明,处理后的表面由憎水变为亲水,并通过纳米压痕划痕法得到了处理前后PS与PVA薄膜之间的相互作用强度,臭氧化改性后PS与PVA膜间作用强度增大了40%。     

用于聚四氟乙烯表面处理的重复频率高压脉冲电源

采用自行研制的μs级重复频率高压单极性脉冲电源,应用于聚四氟乙烯(PTFE)膜表面改性,研究脉冲放电等离子体对PTFE薄膜表面改性的作用规律。测量处理前后PTFE薄膜表面的水接触角,结果显示,在特定的脉冲参数及更严格的对比条件下其平均水接触角从112°下降到85°,PTFE薄膜表面亲水性改善效果非常显著。脉冲电源采用脉宽调制控制方式,通过逆变升压及波形整形,得到脉冲电压幅值0~20kV、重复频率0~20kHz、脉宽5~15μs、上升沿500ns~2μs、下降沿大于20μs的单极性脉冲。     

掺氟SiO_2增透膜真空环境抗污染能力

以正硅酸乙酯为前驱体,采用氨水为催化剂配制SiO2溶胶,在胶体陈化过程中掺入十二氟庚基丙基三甲氧基硅烷对胶体进行改性,并采用溶胶-凝胶法在K9基片上制备了改性的二氧化硅增透膜,用红外光谱仪、分光光度计、原子力显微镜、椭偏仪、静滴接触角测量仪、N2吸附-脱附对膜层性质进行了分析。结果表明:掺氟的二氧化硅膜层增透膜峰值透光率为99.7%;与水的接触角为129°;与二甲基硅油的接触角达到86°;膜层真空抗污染能力比掺氟前大大提高。     

水蒸气在超疏水表面上的冷凝传热

用高温裂解法在紫铜基底上制备了疏水性碳纳米管膜,通过对此碳纳米管膜进行氟化处理,改善了表面的疏水性.在室温下,实验测得水在这种表面上的接触角在90°～130°之间.以水蒸气为冷凝介质的冷凝传热实验表明,水蒸气在超疏水纳米材料表面上能形成较好的滴状冷凝,冷凝传热膜系数可达40000 W/(m2·K).与纯粹膜状冷凝相比,冷凝传热系数提高3～4倍.分析表明,此碳纳米管膜所产生的附加热阻只占冷凝传热热阻的千分之一,对冷凝传热膜系数的影响可以忽略.     

锗红外光学窗口海洋潮差区腐蚀特性研究

对未镀膜及表面镀类金刚石（DLC）膜锗（Ge）红外光学窗口在中国南海海域进行了海洋潮差区腐蚀试验研究,观察测试海洋腐蚀试验前后Ge窗口及膜层的表面形貌和腐蚀速率,报道了腐蚀结果,分析了Ge窗口在海洋潮差区腐蚀特性,探讨了Ge窗口在海洋腐蚀破坏机理,得出了延长Ge窗口在海洋环境下使用寿命的研究方向。研究结果对于了解Ge窗...     

重复频率纳秒脉冲介质阻挡放电对聚对苯二甲酸乙二酯表面改性

介绍了0.1 MPa下的纳秒脉冲介质阻挡放电(DBD)对聚对苯二甲酸乙二酯(PET)材料表面进行的亲水性改善。分别采用均匀和丝状放电模式对PET表面改性处理,并采用水接触角测量、原子力显微镜观察、X射线光电子能谱分析对改性材料进行表面分析。实验发现介质阻挡放电处理后PET表面水接触角明显减小,接触角从78°下降到25°,但随处理时间的增加有饱和效应;PET表面粗糙程度增加,亲水性含氧基团被引入,从而改善了材料表面亲水性;纳秒脉冲下的均匀DBD比丝状DBD处理效果更为显著。     

PDMS改性环氧树脂/Sm2O3复合涂层的近红外光谱及疏水性研究

以聚二甲基硅氧烷(PDMS)改性环氧树脂(HYSZ)为粘合剂,Sm₂O₃为功能颜料,纳米SiO₂为微纳结构改性剂,制备得到了一种同时具有良好疏水性能和附着力的近红外吸收涂层。系统分析了PDMS和HYSZ质量比、邻苯二甲酸二辛酯(DOP)添加量、总填料添加量、 Sm₂O₃和纳米SiO₂质量比对涂层性能的影响。结果表明：PDMS改性可明显降低涂层的表面能,从而使涂层的疏水性得到明显增强。利用DOP强化涂层韧性和微观搭桥作用可增强涂层整体性,从而可明显提高涂层的附着力和近红外吸收性能。涂层的表面粗糙度可随总填料添加量的增加而明显升高,进而可使涂层表现出更优的疏水性能。当涂层中PDMS和HYSZ质量比、 DOP添加量、总填料添加量、 Sm₂O₃和纳米SiO₂质量比分别为1∶9, 20%, 50%和5.5∶4.5时,涂层同时具有良好的近红外低反射率(59.1%)、疏水性能(水接触角为137°)及附着力...     

First-principles investigation on diffusion behaviours of H isotopes: From W(110) surface into bulk and in bulk W

The diffusion behaviours of hydrogen (H), deuterium (D), and tritium (T) from W(110) surface into bulk and in bulk W are investigated using a first-principles calculations combined with simplified models. The diffusion energy barrier is shown to be 1.87 eV from W(110) surface to the subsurface, along with a much reduced barrier of 0.06 eV for the reverse diffusion process. After H enters into the bulk, its diffusion energy barrier with quantum correction is 0.19 eV. In terms of the diffusion theory presented by Wert and Zener, the diffusion pre-exponential factor of H is calculated to be 1.57×10^-7 m²·s^-1, and it is quantitatively in agreement with experimental value of 4.1×10^-7 m²·s^-1. Subsequently, according to mass dependence (√1/m ) of H isotope effect, the diffusion pre-exponential factors of D and T are estimated to be 1.11×10^-7 m²·s^-1 and 0.91×10^-7 m²·s^-1, respectively.     

Morphological and structural damage investigation of nanostructured molybdenum fuzzy surface after pulsed plasma bombardment

Steady high-flux helium (He) plasma with energy ranging from 50 eV to 90 eV is used to fabricate a fiber-form nanostructure called fuzz on a polycrystalline molybdenum (Mo) surface. Enhanced hydrogen (H) pulsed plasma in a wide power density range of 12 MW/m²-35 MW/m² is subsequently used to bombard the fuzzy Mo, thereby simulating the damage of edge localized mode (ELM) to fuzz. The comparisons of surface morphologies, crystalline structures, and optical reflectivity between the original Mo and the Mo treated with various He⁺ energy and transient power densities are performed. With the increase of He ion energy, the Mo nano-fuzz evolved density is enlarged due to the decrease of filament diameter and optical reflectivity. The fuzz-enhanced He release should be the consequence of crystalline growth and the lattice shrinkage inside the Mo-irradiated layers (~200 nm). The fuzz induced by lower energy experiences more severe melting damage and dust release under the condition of the identical transient H plasma-bombardment. The H and He are less likely to be trapped due to aggravated melting evidenced by the enhanced crystalline size and distinct lattice shrinkage. As the transient power density rises, the thermal effect is enhanced, thereby causing the fuzz melting loss to aggravate and finally to completely disappear when the power density exceeds 21 MW/m². Irreversible grain expansion results in huge tensile stress, leading to the observable brittle cracking. The effects of transient thermal load and He ion energy play a crucial role in etching Mo fuzz during ELM transient events.     

Scaling of Yb-doped photonic crystal fiber to 200 μm core diameter for high beam quality laser output

The rare earth-doped active fibers not only have ten thousands of square-micron core-area but also deliver a laser with near-diffraction-limited beam quality. However, they have been studied little. In this paper, we design a 200-μm-corediameter Yb~(3+)-doped photonic crystal fiber with a large pitch in the air-hole cladding region. Simulations demonstrate that only fundamental mode(FM) with a mode field area(MFA) of ～ 28000 μm~2 can be amplified and propagated at the gain saturation, and the beam quality M~2 is about 1.5. It is predicted that almost 105 m J single-pulse energy is available from such a 1.5-meter-length fiber.     

多孔性氟化物助熔剂制备Eu2+:(Sr,Ca) AlSiN3红色荧光粉

H-PAF （Micro-porous aluminum fluoride）是一种比表面积为20~200 m²/g的多孔性氟化物,具有熔点低、活性高等特性。在Eu²⁺：（Sr,Ca） AlSiN₃烧成工艺中作为助熔剂使用,与传统的氟化物、硼酸等助熔剂相比,可以有效增加Eu²⁺：（Sr,Ca） AlSiN₃荧光粉在合成过程中总的反应活性,降低反应温度50℃以上,并改善荧光粉的发光性能。本文以H-PAF多孔性氟化物为助熔剂,合成了Eu²⁺：（Sr,Ca） AlSiN₃荧光粉,合成温度从1 800℃降低到1 750℃,而且XRD衍射峰更尖锐,说明H-PAF的添加使晶体结晶性更好。测试了Eu²⁺：（Sr,Ca） AlSiN₃荧光粉搭配Ga-YAG绿色荧光粉制成器件后的光效。发现添加PAF后,Eu²⁺：（Sr,Ca） AlSiN₃荧光粉用粉量降低约5%,器件光通量提高2%以上。     

Removal of submicron particles from nickel-phosphorus surfaces by pulsed laser irradiation

Pulsed laser cleaning was demonstrated to be an efficient way for removing submicron particles from the nickel-phosphorus (NiP) surface both experimentally and theoretically. Experimentally, it is found that using KrF excimer laser with a pulse width of 23 ns the cleaning threshold is about 20 mJ / cm² for removing quartz particles from the NiP surface and laser cleaning efficiency increases rapidly with increasing laser fluence. The theoretical analysis shows that the peak cleaning force (per unit area) is larger than the adhesion force (per unit area) for submicron quartz particles on the NiP surface when it is irradiated by excimer laser with a fluence above 10 mJ / cm². Therefore, it is possible to remove submicron quartz particles from NiP surfaces by laser irradiation. The difference between the cleaning force (per unit area) and the adhesion force (per unit area) increases with increasing laser fluence, leading to a higher cleaning efficency for quartz particles on the NiP surface.     

Further Acceleration of MeV Electrons by a Relativistic Laser Pulse

With the development of photocathode rf electron gun, electrons with high-brightness and mono-energy can be obtained easily. By numerically solving the relativistic equations of motion of an electron generated from this facility in laser fields modelled by a circular polarized Gaussian laser pulse, we find the electron can obtain high energy gain from the laser pulse. The corresponding acceleration distance for this electron driven by the ascending part of the laser pulse is much longer than the Rayleigh length, and the light amplitude experienced on the electron is very weak when the laser pulse overtakes the electron. The electron is accelerated effectively and the deceleration can be neglected. For intensities around 10¹⁹ W•μm²/cm², an electron's energy gain near 0.1 GeV can be realized when its initial energy is 4.5 MeV, and the final velocity of the energetic electron is parallel with the propagation axis. The energy gain can be up to 1 GeV if the intensity is about 10²¹ W•μm²/cm². The final energy gain of the electron as a function of its initial conditions and the parameters of the laser beam has also been discussed.     

B2-和B19'-NiTi表面原子弛豫、表面能、电子结构及性能的理论研究

采用基于密度泛函理论的第一性原理系统研究了B2-和B19'-NiTi合金所有低指数表面的表面能、表面结构稳定性、表面电子结构等性质.计算结果表明两种NiTi合金所有低指数表面的原子弛豫主要集中在表面2-3个原子层,且以Ti原子为终止原子表面构型的原子振荡最为剧烈,Ni和Ti原子共同终止表面构型的原子振荡最小;价电荷密度沿着表面构型向真空层方向快速衰减;表面能计算结果显示其与配位数成反相关.B2-和B19'-NiTi合金的非密排且非化学计量比表面的表面能取决于Ti的化学势,表面能数值较高;而密排面的表面构型符合化学计量比,其表面能较低,表现出卓越的化学稳定性;其中以B2-NiTi(101)密排面的表面稳定性最优.     

Cathode spot energy transfer simulated by a focused laser beam

Minimum conditions for the formation of surface craters by laser irradiation were studied experimentally and theoretically for various metals. The critical power density for crater formation within 20 ns was about 10¹¹ W/m². It is therefore concluded that crater formation by ion bombardment requires an ion current density on the order of 10¹⁰ A/m²     

Ab-initio calculation of the electronic structure and energetics of the unreconstructed Au(001) surface

The electronic structure, surface and relaxation energies, and the electric field gradient for the unreconstructed Au(001) surface were calculated by means of the ab-initio all-electron full-potential linearized augmented plane wave slab method. The valence states were calculated within the standard semi-relativistic approach whereas the core states are treated in a fully relativistic way. The Au(001) surface was modelled by free slabs of 5, 7, and 9 layers. From the 9-layer calculation a work function of 5.39 eV was obtained. For the surface energy a value of 1.30 J/m² for the unrelaxed geometry was derived from the total energies of the 7- and the 9-layer slabs. From total energy minimization of the 7-layer slab, a negative, inward relaxation of −2.6% and a relaxation energy of 14.3 × 10⁻³ J/m² were derived. To discuss a mechanism of reconstruction, particular surface states were analyzed in detail in terms of the band structure, layer-dependent density of states and the charge density distribution. Differences of surface and central-layer charge densities show a gain of charge in z-direction localised below and also, to a smaller extent, above the surface atoms. We find a very small gain of delocalised charge in the surface plane between the nearest neighbour positions at the expense of more localised s-d hybridised states. The electric field gradient component Φ_zz was obtained in a two energy window calculation for which the Au5p states were also treated as band states. The resulting Φ_zz values are −16.50 × 10¹⁷ V/cm² surface layer, and −3.3 × 10¹⁷ V/cm² for the subsurface layer.