测量液体非线性参量的光声方法

本文描述了一种用光声脉冲测量液体非线性参量Ｂ／Ａ的新方法。用聚焦脉冲激光束通过光击穿机制在液体中激发光声脉冲。在测量距离范围内，光声脉冲声压幅值随传播距离的变化接近球面扩展衰减规律。根据光声脉冲传播一定距离后前沿上升时间的变化，测定了液体的Ｂ／Ａ。和有限束宽的平面脉冲声波相比，用球面脉冲声波可以避免衍射的影响。用此法测量了水的非线性参量，得到了满意的结果。     

2ω1ω激光驱动的类氖锗19.6 nm X光激光

 类氖离子的X光激光理论研究可以为类镍X光激光提供有益启示。设计了一系列瞬态电子碰撞激发类氖锗19.6 nm X光激光的实验,采用2ω1ω泵浦方式,即预脉冲采用倍频钕玻璃激光,主脉冲采用基频,用新开发的瞬态电子碰撞激发类氖锗的系列程序进行了模拟,并与1ω1ω驱动的情况进行了比较。模拟表明, 2ω1ω泵浦方案使类氖锗19.6 nm Ｘ光激光的小信号增益系数增大为1ω1ω方案的1.6倍,增益区也转移到了更高的电子密度区,是获得更短波长X光激光的一种有效方法。     

对高频声子的探测

晶体中的原子在其平衡点附近的摇晃会产生振动波,即声子．声子能在固体中传播声、热能和其他形式的能量,测量声子的性质可以提供有关晶体的结构以及原子间相互作用的各种信息．声子的性质一般是利用与光子的声一光相互作用来测定的．但当声波的波长小到只有原子间距的大小时,就很难利用声一光作用来探测声子了．因此,尽管有许多科学家都认为,在固体中已激发出了高频声子,但却无法用直接或间接的方法来精确地测定它们．     

利用光差分技术检测激光激发声表面波定征薄膜材料

利用激光激发声表面波及改进的光差分检测技术,研究沉积在基片表面的薄膜样品的特性和参量。根据实验获得的声色散曲线和基片已知参数,结合层状媒质中声表面波传播理论,拟合得到薄膜材料的弹性模量、密度和厚度等物理量。结合扫描电子显微镜和X光衍射结果分析,并与文献值比较,表明所采用的技术是定征薄膜材料的弹性模量和力学参量的有效方法。     

声速不均匀介质的光声成像重建算法

为提高声速不均匀介质的光声成像精度,提出一种基于反卷积的光声成像重建算法.本算法不需预先知道介质的声速分布.先通过探测到的光声信号构造出一个新函数,并用不同位置探测到的光声信号间的相关性来估计空间两点间的声波传播时间,以补偿声速的不均匀性.然后基于反卷积方法由该函数解出待测组织内的电磁波吸收分布.仿真研究结果表明,当介质声速差异在10%以内时,重建图像能正确反映待测目标的大小、位置和电磁波吸收系数,算法具有良好的抗噪性能.由于生物软组织内的声速差异一般小于10%,因此本算法是一种有效的光声成像重建算法.     

基于柱弥散光源体内辐照的前列腺扫描光声成像仿体实验

光声成像技术是一种非常有前景的前列腺早期检测与成像的新技术. 在现有前列腺光声成像技术中, 通常采用的腺体外光源辐照方式由于受外围组织的影响, 容易减弱深部前列腺组织的光能量吸收, 导致辐照范围减小, 引起光声成像深度不足, 难以实现无损前列腺癌的检测. 本文基于前列腺组织的结构特征, 依据一种以柱状弥散光纤在尿道对前列腺实施光辐照、并利用外置于直肠内的长焦区聚焦式超声换能器检测光声信号的前列腺光声扫描成像技术, 构建了光声成像实验系统, 开展了仿体实验. 测试结果表明, 系统能够实现样品中吸收体的定位和成像, 结合柱弥散光源体内辐照可使成像深度提高, 同时侧向成像范围也较大. 初步结果表明, 借助柱弥散光源进行体内光辐照的光声信号新激发方式结合长焦区超声探头在前列腺癌早期无创诊断上具有潜在的应用前景.     

基于镂空阵列探头的反射式光声/热声双模态组织成像

光声和热声成像技术除激发源不同外,可共用一套数据采集和处理系统,具有天然的融合优势.本文提出了一种基于镂空阵列的反射式光声/热声双模态成像技术,该技术利用光纤与天线,通过镂空阵列的开孔进行光声/热声信号激发,使得激发光、微波和接收超声信号共轴,构成明场光声/热声双模态成像模式.通过对探头镂空部分晶元相位和幅值的补偿校准,成功实现了3 mm直径塑料管、人体手臂、手背和脚背的双模态成像.实验结果表明:系统空间分辨率为0.33 mm,双模态成像技术可同时提供组织的光学和微波吸收分布,有助于肿瘤、糖尿病足等疾病的精准检测,具有极广泛的临床应用前景.     

基于多元相控技术的一体化光声快速成像系统

利用多元相控技术发展了一体化光声快速成像系统,该成像系统集成了激光传输、光声激发和光声信号探测.多元线性阵列探测器以反射模式接收光声信号,并通过相控聚焦技术快速成像,得到了不同深度的猪油模拟样品的光声像和活体动物不同直径血管的光声像,系统的横向分辨率为0.5 mm,光声采集成像时间为5 s.该一体化光声快速成像系统与现有的光声成像系统相比,具有快速方便等特点.     

脉冲激光在液体中激发的声波特性研究

理论上分析了脉冲激光在液体中产生的声波波阵面随光声源形状的变化,以及不同激发机制下光声脉冲波形的差别,并从实验中得出了脉冲CO2激光光声脉冲频谱特性.结果表明光声波波阵面为球面或柱面,热弹机制激发双极性的光声脉冲,汽化机制激发单极性的光声脉冲,CO2脉冲激光在水中激发的声波频谱峰值主要在100 kHz以下.通过选择光声源的形状和激发机制可以获得所需的光声信号.     

光声成像研究进展

本文阐述了光声成像的工作原理,光声信号的产生,传播和探测过程,并总结了光声成像的研究进展,包括时域光声成像和频率域光声成像的研究进展、以及各自的特点,为光声成像领域的研究起到一定的借鉴作用。分析认为光声成像技术有着其他医学成像技术没有的诸多优点,如高分辨率、高对比度、成像深度深等具有广阔的应用前景和较高应用价值,是未来生物医学领域最重要的实时医学成像技术之一,因此得到了国际上的广泛关注。     

Laser hyperacoustic spectroscopy of single crystal germanium

Using a photothermal laser deflection technique the profiles of laser-induced hyperacoustic pulses in single crystal germanium were studied at a subnanosecond time resolution. It is shown that the hyperacoustic pulses are excited due to an electron-deformation interaction of photogenerated carriers with the crystal lattice, which is much more effective than the thermoelastic mechanism of the acoustic wave generation. Evolution of the hyperacoustic pulse profiles related to the diffraction and acoustic absorption effects was studied. An analysis of the hyperacoustic signal profiles allowed us to estimate the coefficient of ambipolar diffusion of the photogenerated charge carriers and the coefficient of hyperacoustic wave damping. It is established that the front of the electron-hole plasma laser-excited in germanium at room temperature propagates at a supersonic velocity.     

低泵浦能量类氖锗等离子体软X射线激光实验

提出并采用具有一定时间间隔的双束脉冲加热锗薄膜靶方法，在泵浦激光能量１００Ｊ，靶长１０ｍｍ的实验条件下，观察到波长１９．６１ｎｍ和２３．６３ｎｍ两条类氖锗３ｓ－３ｐ激光跃迁线。１９．６１ｎｍ（Ｊ＝０－１）的激光跃迁线发射强度较２３．６３ｎｍ（Ｊ＝２－１）激光线的强度大，其发散角较后者小。     

Velocity of propagation in the shock-crystallization of sputtered amorphous germanium

Shock-crystallization in sputtered amorphous germanium thin films has been studied by a high speed movie technique. One hundred cm/sec has been obtained as the velocity of propagation of the crystallization wave. This value is much smaller than that of the sound velocity and rules out the contribution of the acoustic shock-wave to this phenomenon.     

Lattice defects of Bi2Se3 doped with germanium

Homogeneous Bi₂Se₃ crystals with various germanium content were prepared by means of modified Bridgman technique. Reflectivity measurements in the region of plasma resonance frequency of the free carriers revealed a shift of the reflectivity minimum towards shorter wavelengths for samples with higher germanium content. Combining the reflectivity data and the results of the Hall constant measurement we determined the free-carrier concentration for individual Ge-doped Bi₂Se₃ samples. It is shown that the germanium atoms give rise to donor levels. The ionization energy of these levels was estimated at less than 0·026 eV. The donor levels are most probably connected with the existence of singly ionized germanium atoms in interstitial positions.     

超薄氢化非晶锗膜的结构与光电性质

通过PECVD制备出了不同厚度的a-Ge∶H膜,采用Raman光谱对样品进行了结构表征,由椭圆偏振光谱仪得到样品的厚度和光学常数,并计算了样品的光学带隙。由变温电导率分析了薄膜的电学输运性质,结果表明,载流子的传输机制为扩展态电导。进而利用变温PL谱研究了薄膜的发光性能,发现其发光峰在1.63 μm处;随着膜厚的减小,峰位和峰形都有改变,且强度明显提高。进一步分析发现,随着膜厚的减小非辐射复合跃迁的激活能增大,从而导致辐射复合过程增强。     

Preparation of hydrogenated amorphous germanium by reactive thermal evaporation

Hydrogenated amorphous germanium was prepared by the thermal evaporation of high purity polycrystalline germanium in an atmosphere of hydrogen plasma produced by high voltage AC discharge of molecular hydrogen. The addition of hydrogen during the thermal evaporation of germanium is shown to improve the electrical properties of the resulting amorphous germanium films considerably by saturation of dangling bonds, if the dissociation of molecular hydrogen takes place. Hydrogenated sample deposited at 200°C has shown a high resistivity and an activation type conduction (with an activation energy of 0.38–0.39 eV) in measuring temperature range (above room temperature).     

Z箍缩等离子体振荡引起的电磁脉冲辐射

从理论上研究了Z箍缩过程中单模的等离子体振荡引起的电磁脉冲辐射。当模式扰动的相速度大于真空中的光速时,电磁脉冲辐射具有类似于切伦科夫辐射的角分布特征,并且随着相速度的增大这种定向辐射特征越显著;不同波长的电磁辐射也具有不同的角分布特征,短波长的电磁脉冲具有更好的定向性。电磁辐射功率强烈依赖于电子的等离子体振荡频率和等离子体柱的半径。     

Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films

We use a novel analytical technique, previously shown to be able to decouple germanium and boron contents, to measure simultaneously the germanium and carbon contents of a set of carbon-doped epitaxial SiGe films. The method is based on the use of “perturbation functions” to account empirically for the effects that the dopant has upon the fundamental dielectric functions of the material. To demonstrate the technique, a matrix of 10 wafers having variation in both germanium and carbon contents was analyzed. Neglecting the presence of carbon led to large errors in germanium content, whether measured optically or by X-ray diffraction (XRD). However, using the new method the thickness, germanium and carbon contents could be derived together and very good agreement was obtained between measurements on a production-grade optical metrology tool and measurements by secondary ion mass spectrometry (SIMS). To verify the production-worthiness of the approach used, results from two different production metrology tools (i.e. two Therma-Wave Opti-Probe 5220 tools) were compared and some repeatability testing was also performed. The method holds great promise for improving run-to-run process control for advanced epitaxy processes.     

痕量锗的HG-ICP测定及介质对其测定的影响的研究

采用氢化物发生-电感耦合等离子体原子发射光谱法测定痕量锗的方法,系统地考察了不同酸介质、NaBH₄浓度及共存元素的影响,确定了最佳测定条件。方法的检出限为0.2 ng·mL-1,精密度为0.9%。用环境标准物质进行对照,其测定值均在给定的标准范围之内。并且针对反应介质对锗测定的影响,进行了详尽的研究。     

Time variation of the intensity of spectral lines due to a plasma generated under the action of intense infrared laser radiation on a germanium target

The time waveforms of the intensity of spectral lines associated with a germanium laser plasma is studied by the emission spectroscopy method. The plasma is generated by irradiating a germanium target by a pulsed-periodic IR radiation from a neodymium laser, and the intensity waveforms are taken at distances of 1 and 7 mm from the target. From the intensity waveforms, the plasma parameters, such as the ion recombination time and the electron temperature and concentration, are determined. The time variation of the emission characteristics and plasma parameters is analyzed.