吲哚方酸菁染料在表面活性剂水溶液中的光降解

考察了4种含有不同N位取代基的对称吲哚方酸菁染料在阳离子表面活性剂十六烷基三甲基溴化铵(CTAB)、阴离子表面活性剂十二烷基硫酸钠(SDS)和非离子表面活性剂曲拉通(TX-100)水溶液中的光降解行为,结果表明,表面活性剂对染料分子具有保护作用,其影响大小为CTAB>TX-100>SDS,分子中有羧基的染料受影响程度最大。在表面活性剂浓度较低时,染料光降解程度随着表面活性剂浓度的增加而增加,但形成胶束后,染料的光降解程度则随着表面活性剂浓度的升高而降低。     

冠醚方酸碲碳菁染料的合成研究

合成了不对称冠醚方酸碲碳菁染料和对称冠醚方酸碲碳菁染料，并探讨了对称冠醚方酸碲碳菁的合成方法及反应条件，提出了其可能的反应机理。     

新型吡喃鎓方酸菁染料溶剂效应、聚集行为研究

本文研究了五个吡喃鎓方酸菁染料的溶剂效应,发现最大吸收峰波数υ与函数f(n,ε)存在较好的线性关系,而Bayliss函数项(n²-1)/(2n²+1)决定了吸收光谱的位移变化Δυ,同时还分析了氢键相互作用对理论函数模型的误差.根据染料的聚集动力学证实了染料在正丙醇/水(4:21,体积比)体系中确有二聚体的产生,并发现了两组不同的聚集特性.此外,使用APCIMS质谱技术证实Dye3二氯甲烷浓溶液中也产生了二聚体.     

新型不对称吡喃鎓方酸菁染料的晶体结构

通过缓慢挥发溶剂法得到一种不对称吡喃方酸菁染料的单晶,测定了其晶体结构.其晶系为三斜晶系,空间群为P1,a=0.9228(4),b=1.4122(6),c=0.6124(3)nm,α=93.97(4),β=98.14(5),γ=71.05(4),V=0.7470(6)nm³,Z=1.用晶体结构数据解释了此不对称染料的¹H-NMR谱.     

不对称方酸菁的合成、性质和应用

综述了不对称方酸菁的合成、中间体的制备、光谱、光导性能以及应用研究。     

方酸菁荧光探针的应用研究进展

功能性方酸菁染料具有独特的D-A-D共轭结构,其在可见光和近红外区域有强烈的吸收和荧光发射。方酸菁染料作为近红外荧光探针母体被应用于蛋白质、氨基酸、一些生物小分子、环境污染物及金属离子等的检测。本文结合课题组近几年工作综述了方酸菁染料在蛋白质、氨基酸、生物小分子、阳离子和其它物质检测方面的应用。     

方酸菁染料在有机太阳能电池中的研究进展

方酸菁作为一种重要的菁类染料,由于它在可见-近红外区有强烈的吸收和发射性质,以及良好的光热稳定性,使它在太阳能电池的研究中越来越受到重视.随着理论的不断完善,以及太阳能电池制作技术的成熟,方酸菁将在这一领域继续得到快速发展.综述了近年来方酸菁染料在染料敏化太阳能电池和本体异质结太阳能电池中的应用,从机理角度着重讨论了染料分子结构等因素对电池性能的影响,并提出了未来的研究方向.     

含碲唑杂环的不对称碳菁及方酸菁的合成与性质

以苯并碲唑季铵碘盐为原料，将其与３－乙基－２－（β－乙酰苯胺）乙烯工噻唑磺化季铵盐在无水吡啶中回流，得到４个含碲不对称碳菁染料，上述季铵盐与方酸的反应不 般杂环碱，只能发生１：１缩合反应，缩合产物与苯并噻唑碘盐在正丁醇／吡啶中反应即得含碲不对称方酸菁染料，该法避免了通常制备不对称方酸菁所带来的分离纯化的困难，从而提供了制备不对称方酸碲菁染料的通用方法，研究了不对称碲碳菁的“Ｂｒｏｏｋｅｒ偏差”，结     

新型蒽类聚方酸菁的合成及其性能

以蒽为起始原料,经溴代反应和Witting-Horner反应制得单体9,10-双[2-(1-辛基-1H-吡咯-2-基)乙烯基]蒽(3);3与芳酸缩聚合成了一个新型的蒽类聚方酸菁(4),其结构和性能经UV-Vis,1HNMR,13CNMR,IR,XRD,SEM和TG表征。4在氯仿中的λmax位于700nm;4为非晶态结构;4的初始分解温度为297.1℃。     

有机/聚合物场效应管

有机场效应管（OFET）自从1987年首次出现以来，尤其是在最近两三年，已经取得了长足的发展，已经成为最为重要的有机电子器件之一。本文综述了关于OFET的工作原理，用于OFET的半导体材料及成膜工艺等方面的新研究成果。并指出了OFET目前所存在的问题及发展方向。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注。有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟。本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理。同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注.有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟.本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理.同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结.     

多壁碳纳米管互连的单壁碳纳米管晶体管的频率特性

用多壁碳纳米管(MWCNTs)作为互连线制备出了单壁碳纳米管场效应晶体管(SWCNT FETs), 对比研究了用多壁碳纳米管作为互连线和用金属作为互连线的两种情况. 结果表明, 二者的直流(DC)性能基本一致, 而用多壁碳纳米管作为互连线的交流(AC)性能略优于用金属作为互连的情况. 交流测量表明, 至少在20 MHz的频率下, 多壁碳纳米管互连的单壁碳纳米管晶体管仍有很好的响应速率, 器件能够正常工作.     

Recent Progresses on the High Performance Organic Electrochemical Transistors

Organic electrochemical transistor(OECT) with bulk current modulation capability based on the ion penetration into the organic semiconducting channel exhibits unique features, including high transconductance, low voltage and large capacitance. The high current at a low voltage, together with the compatibility with aqueous environment, makes OECT particularly suitable for bioelectronic applications, such as biological interfacing, printed logic circuitry and neuromorphic devices. However, the operation mechanism and structure-performance relationship of OECT are rather complicated and remain unclear to date. One of the critical issues is the ion penetration and transportation process. This review focuses on the research progresses of how to improve the OECT performance specifically through materials design, interfacing and morphology modulation. Different strategies of promoting the ion doping process are compared and discussed in order to optimize the device performance so that a deep understanding of the OECT operation principle could be gained.     

基于吡嗪连接的石墨烯电极单分子场效应晶体管

In single-molecule junctions, anchoring groups that connect the central molecule to the electrodes have profound effects on the mechanical and electrical properties of devices. The mechanical strength of the anchoring groups affects the device stability, while their electronic coupling strength influences the junction conductance and the conduction polarity. To design and fabricate high-performance single-molecule devices with graphene electrodes, it is highly desirable to explore robust anchoring groups that bond the central molecule to the graphene electrodes. Condensation of ortho-phenylenediamine terminated molecules with ortho-quinone moieties at the edges of graphene generates graphene-conjugated pyrazine units that can be employed as anchoring groups for the construction of molecular junctions with graphene electrodes. In this study, we investigated the fabrication and electrical characterization of single-molecule field-effect transistors (FETs) with graphene as the electrodes, pyrazine as the anchoring groups, and a heavily doped silicon substrate as the back-gate electrode. Graphene nano-gaps were fabricated by a high-speed feedback-controlled electro-burning method, and their edges were fully oxidized; thus, there were many ortho-quinone moieties at the edges. After the deposition of phenazine molecules with ortho-phenylenediamine terminals at both ends, a large current increase was observed, indicating that molecular junctions were formed with covalent pyrazine anchoring groups. The yield of the single-molecule devices was as high as 26%, demonstrating the feasibility of pyrazine as an effective anchoring group for graphene electrodes. Our electrical measurements show that the ten fabricated devices exhibited a distinct gating effect when a back-gate voltage was applied. However, the gate dependence of the conductance varied considerably from device to device, and three types of different gate modulation behaviors, including p-type, ambipolar, and n-type conduction, were observed. Our observations can be understood using a modified single-level model that takes into account the linear dispersion of graphene near the Dirac point; the unique band structure of graphene and the coupling strength of pyrazine with the graphene electrode both crucially affect the conduction polarity of single-molecule FETs. When the coupling strength of pyrazine with the graphene electrode is weak, the highest occupied molecular orbital (HOMO) of the central molecule dominates charge transport. Depending on the gating efficiencies of the HOMO level and the graphene states, devices can exhibit p-type or ambipolar conduction. In contrast, when the coupling is strong, the redistribution of electrons around the central molecule and the graphene electrodes leads to a realignment of the molecular levels, resulting in the lowest unoccupied molecular orbital (LUMO)-dominated n-type conduction. The high yield and versatility of the pyrazine anchoring groups are beneficial for the construction of single-molecule devices with graphene electrodes.     

Semiconducting Polymers Based on Simple Electron-Deficient Cyanated trans-1,3-Butadienes for Organic Field-Effect Transistors

Developing high-performance but low-cost n-type polymers remains a significant challenge in the commercialization of organic field-effect transistors (OFETs). To achieve this objective, it is essential to design the key electron-deficient units with simple structures and facile preparation processes, which can facilitate the production of low-cost n-type polymers. Herein, by sequentially introducing fluorine and cyano functionalities onto trans-1,3-butadiene, we developed a series of structurally simple but highly electron-deficient building blocks, namely 1,4-dicyano-butadiene ( CNDE ), 3-fluoro-1,4-dicyano-butadiene ( CNFDE ), and 2,3-difluoro-1,4-dicyano-butadiene ( CNDFDE ), featuring a highly coplanar backbone and deep-positioned lowest unoccupied molecular orbital (LUMO) energy levels (−3.03–4.33 eV), which render them highly attractive for developing n-type semiconducting polymers. Notably, all these electron-deficient units can be easily accessed by a two-step high-yield synthetic procedure from low-cost raw materials, thus rendering them highly promising candidates for commercial applications. Upon polymerization with diketopyrrolopyrrole ( DPP ), three copolymers were developed that demonstrated unipolar n-type transport characteristics in OFETs with the highest electron mobility of >1 cm² V⁻¹ s⁻¹. Hence, CNDE , CNFDE , and CNDFDE represent a class of novel, simple, and efficient electron-deficient units for constructing low-cost n-type polymers, thereby providing valuable insight for OFET applications.     

多元杂环萘二酰亚胺衍生物的合成及其场效应性能研究

杂环修饰的萘二酰亚胺(NDI)类化合物由于其独特的光电性能被研究人员广泛关注,并应用于有机场效应晶体管(OFETs)、有机太阳能电池中(OSCs)、传感器等领域。但是含有给受体单元的多元杂环萘二酰亚胺衍生物的合成并不容易,本文通过简单高效的方法设计合成了含有氮、硫原子的11个杂环类萘二酰亚胺衍生物,并通过紫外可见吸收光谱、循环伏安曲线和X射线衍射对其进行了物性研究。通过溶液旋涂法,制备了该材料的底栅底接触场效应晶体管器件,在空气中表现出p型半导体性能,当退火温度为140 ℃时性能达到最优,其空穴迁移率为0.2 cm_²?V_^-1?s_^-1。     

含硒杂环萘二酰亚胺衍生物的合成及其场效应性能研究

萘二酰亚胺(NDI)类化合物由于其较好的平面性和较强的接受电子能力,被广泛应用于有机场效应晶体管(OFETs)和有机太阳能电池中(OSCs).然而,高迁移率的n型和双极性NDI类半导体材料较少.基于此,本文设计合成了核位硒杂环修饰的NDI衍生物,通过引入1,2-二硒苯和1,2-二硒萘基团,对其能级进行了有效的调控,获得...     

二萘嵌苯二酰亚胺衍生物的半导体性质

应用密度泛函理论研究了四种二萘嵌苯二酰亚胺(PDI)(N,N'-二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(1), N,N'-二(3-氯苯甲基)二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(2), N,N'-二(3-氟苯甲基)二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(3)和N,N'-二(3,3-二氟苯甲基)二萘嵌苯-3,4,9,10-四羧酸二酰亚胺(4))半导体材料的最高占据轨道和最低未占据轨道能量、离子化能和电子亲和能以及在电荷传导过程中的重组能. 与化合物2-4的最高占据轨道和最低未占据轨道能量变化相同, 在PDI分子外围引入氯苯甲基或氟苯甲基后导致化合物2-4的绝热电子亲和能有不同程度的增加. 应用Marcus电子传导理论, 计算了这四种半导体材料应用于有机场效应晶体管在电子传递过程中的电子耦合和迁移率. 计算结果表明:这四种化合物相对于金属金电极而言具有较小的电子注入势垒, 是优良的n型半导体材料. 计算的这四种半导体材料的电子传输迁移率分别为5.39, 0.59, 0.023和0.17 cm2·V-1·s-1. 通过研究化合物分子在还原过程中几何结构变化和在化合物3晶体中不同类型的电子传递路径, 合理地解释了化合物1-4在有机场效应晶体管电荷迁移过程中具有较高的电子迁移率.