Total dielectronic recombination rate coefficient for Co-like tungsten

Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state 3s²3p⁶3d⁹(J=5/2) of Co-like tungsten is performed employing the relativistic distorted-wave approximation with configuration-interaction. The DR contributions mainly come from complex series 3d⁸4ln′l′. The complex series 3p⁵3d¹⁰n′l′, 3p⁵3d⁹4ln′l′ and 3d⁸5ln′l′ also contribute significantly to the total DR rates at relatively high electron temperatures. The l′ and n′ dependences of the partial rate coefficient are investigated. The inclusion of decays into autoionizing levels followed by radiative cascades (DAC) enlarges the total DR rate coefficients by a factor of about 10%. The level-by-level extrapolation method is developed to include DAC effects. The total DR rate coefficients are fitted to an empirical formula. It is shown that at temperatures above 2.5 keV the Burgess-Merts (BM) semiempirical formula can provide DR results with an accuracy of about 15%, whereas at electron temperatures below 100 eV it underestimates the DR rate coefficients by up to a few orders of magnitude and its temperature dependence is completely inadequate. The comparison of the results for Ni-like and Co-like tungsten shows that these two sets of DR rate coefficients are very close in magnitude at relatively high electron temperatures.     

类铷W37+离子双电子复合速率系数的理论研究

 利用全相对论组态相互作用理论方法,研究了类铷W³⁷⁺离子从基组态3s²3p⁶3d¹⁰4s²4p⁶4d经过双激发态(3s²3p⁶3d¹⁰4s²4p⁶4d)^-1nln′l′(n,n′=4,5)的双电子复合过程,得到了该离子在温度为1~5×10⁴ eV范围内的总双电子复合速率系数。分析比较了不同电子激发的双电子复合速率系数,结果表明:4p电子激发的双电子复合速率系数在低温时给出了主要贡献,而3d的贡献在高温时突出。由于强组态相互作用,两电子一光子跃迁对双电子复合速率系数的贡献不可忽略,其中辐射跃迁4p⁵4d5d5f-4p⁶4f5d的贡献是双激发态4p⁵4d5d5f总的双电子复合速率系数的5%。对双电子复合、辐射复合以及三体复合速率系数的比较表明,在所研究的温度范围内双电子复合速率系数最大。     

Dielectronic recombination rate coefficients of Ni-like barium and tungsten

Ab initio calculations of the total dielectronic recombination (DR) rate coefficient of Ni-like barium () and tungsten () in the ground state have been performed using the HULLAC atomic code package. Resonant and nonresonant stabilizing radiative transitions are included. Collisional transitions following electron capture are neglected. The present level-by-level calculations include the DR contributions of all of the levels (over 17000) in the Cu-like inner-shell excited configurations 3d ⁹ 4ln'l' (), 3p ⁵ 3d ¹⁰ 4ln'l' (), and 3s3p ⁶ 3d ¹⁰ 4ln'l' (). For both ions, the configuration complexes with a hole in the 3p inner shell contribute almost 10% to the total DR rate coefficient, while the complexes with a hole in the 3s inner shell contribute about 1%. The converging contributions of the 3d ⁹ 4ln'l' (n' > 9) configurations are evaluated by applying the complex-by-complex extrapolation method and are found to comprise up to about 20% of the total DR rate coefficients throughout a wide electron temperature range. The total DR rate coefficients are fitted to an easy-to-use analytic expression which reproduces the original data with an accuracy of about 2% or better in a very wide temperature range. Received: 1 February 1999     

Double-excited narrow autoionization states of ytterbium atom

We report the results of theoretical and experimental research of double-excited narrow autoionization states of the ytterbium atom near the ionization limit. The energy of autoionization states of the 5d², 6p², 5d6p and 7s6p configurations was calculated. Perturbation theory with a model zero-order approximation was used in this calculation. The autoionization states of the 7s6p configuration were experimentally detected by using the method of multistep laser excitation and ionization of atoms.     

Theoretical studies on dielectronic recombination of neonlike gold and its effects on plasma ionization balance and radiation energy

The dielectronic recombination (DR) of neonlike gold ions is investigated employing the flexible atomic code based on the relativistic configuration interaction method, and its influence on the ionization balance and radiation energy in high-temperature plasma is also studied. The total resonance strength for LMM configuration complex is in a good agreement with the experimental measurement and other theoretical works. The DR rate coefficients are calculated and compared with the three-body recombination and radiative recombination rate coefficients. The DR process is the dominant recombination mechanism of Ne-like gold ions for plasma with temperature T_e≥6.5 keV and density n_e≤2×10²² cm^-3, which is close to the condition of X-ray conversion region in the inertial confinement fusion. Moreover, the DR satellite spectra of LMM, LMN and LMO resonances are simulated, and compared with the intensities of the corresponding resonance lines induced by the electron impact excitation. The intensity ratio of the satellite line 3D’ [(2p⁵_3/23d_3/23d_5/2)_J=5/2[(2p^{5}_{3/2}3d_{3/2}3d_{5/2})_{J=5/2}–(2p⁶3d_3/2) _J=3/2](2p^{6}3d_{3/2})_{ J=3/2}] and the resonance line 3D [(2p⁵_3/23d_5/2)_J=1[(2p^{5}_{3/2}3d_{5/2})_{J=1}–(2p⁶)_J=0](2p^{6})_{J=0}] is given, which can be applied for diagnostics of plasma temperature.     

Dielectronic recombination of Co-like tantalum

Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state of Co-like tantalum is performed using the relativistic distorted-wave approximation with configuration interaction. The contributions to the total DR rate coefficients are explicitly calculated from the complexes of Ni-like tantalum: 3s²3p⁶3d_3/2³ 3d_5/2⁶ n'l', 3s²3p⁵3d¹⁰n'l', 3s3p⁶3d¹⁰n'l', 3s²3p⁶3d⁸4ln'l', 3s²3p⁵3d⁹4ln'l' and 3s3p⁶3d⁹4ln'l' with n' ≤ 25, and 3s²3p⁶3d⁸5ln'l' with n' ≤ 9. The l' and n' dependences of partial DR rate coefficients are investigated. The contributions from higher n'complexes are evaluated by a level-by-level extrapolation method. The total DR rate coefficients mainly come from the complex series 3s²3p⁶3d⁸4ln'l', 3s²3p⁵3d⁹4ln'l' and are fitted to an empirical formula with high accuracy. Comparison of the present results with those of other works shows that the previously published data underestimate significantly the DR rates of Co-like tantalum.     

Dielectronic recombination rate coefficients for the Ni ${\sf I}$ isoelectronic sequence

Ab initio calculations of the total dielectronic recombination (DR) rate coefficients for thirteen ions along the NiI isoelectronic sequence in the ground state (Kr⁸⁺, Mo¹⁴⁺, Ag¹⁹⁺, Sn²²⁺, Xe²⁶⁺, Nd³²⁺, Gd³⁶⁺, Yb⁴²⁺, W⁴⁶⁺, Au⁵¹⁺, Pb⁵⁴⁺, At⁵⁷⁺, and U⁶⁴⁺) have been performed using the flexible atomic code. The level-by-level calculations are performed for evaluating the DR contributions through the relevant Cu-like autoionizing inner-shell excited 3l¹⁷4l^′n^′′l^′′ and 3l¹⁷5l^′n^′′l^′′ configuration complexes with n^′′ ≤15, which are associated with Δn=1 and Δn=2 core-excitations, respectively. The usual (n^′′)^-3 scaling law is found to be invalid for low-Z ions. A level-by-level extrapolation procedure is employed to obtain the contributions through higher n^′′ complexes. The decays to autoionizing levels followed possibly by radiative cascades could enlarge the rates at relatively high temperature by a factor up to about 23%. For the whole isoelectronic ions the contributions from 3s²3p⁶3d⁹ 4l^′n^′′l^′′ dominate the total DR rates while the contributions from the 3s²3p⁶3d⁹ 5l^′n^′′l^′′ configuration complexes are about 10-20% at relatively high temperature. On the basis of the calculated results, a general analytic formula for the total DR rate coefficients of all the ions with 36≤Z ≤92 along the NiI isoelectronic sequence is constructed. The comparisons of the rates obtained from the general formula with those from the detailed calculations show that the formula is of high precision, generally better than 3% accuracy for electron temperatures kT≥0.1E_I, where E_I is the ionization energy of the Cu-like ion. The present DR rates at temperature above 1.0E_I are larger than the previously published data by a factor above 30%. The commonly used semiempirical formula proposed by Burgess and modified by Merts may overestimate the rates at high temperature by a factor of about 2 for low-Z ions.     

CALCULATION OF THE FINE STRUCTURE OF OXYGEN-LIKE IONS USING THE POLARIZATION POTENTIAL FUNCTION

We have calculated the forbidden transition energies and magnetic dipole transition probabilities of 2s²2p⁴(³P₁－³P₂) and 2s²2p⁴ (³P₀－³P₁) of oxygen-like isoelectronic sequences (Z=10－32) by a method of polarization potential correction. The transition energies show good agreement with experiment and are much better than the calculations in the literature. These results also illustrate that it is feasible to use the dipole expansion of the polarization potential to deal with some dynamic and non-dynamic effects in the central field approach. The relation of polarizability and cut-off radius with atomic number is discussed. We also give the fitted formula between the polarizability α₁ and atomic number Z as α₁=0.73429-9.56644×10^-4Z+7.43016×10^-5Z^{2-2.53298×10-6Z3+2.08306×10-8Z4.}     

Autoionizing and highly excited states in the spectrum of triply ionized tin Sn IV

Transitions from autoionizing states in the spectrum of Sn IV in the range 200–630 Å, occurring due to the excitation of electrons from the inner 4d ¹⁰ shell, are investigated with high resolution. The transitions from the 4d ⁹5p ², 4d ⁹5s6p, and 4d ⁹5snf (up to n = 9) configurations are identified and their autoionization widths are measured. Transitions from the highly excited 4d ¹⁰ ns (n = 8–10), 4d ¹⁰6p, and 4d ¹⁰7d configurations are also revealed and the ionization potential of Sn IV is refined. The data obtained are compared with the results of calculations by the Hartree-Fock and semiempirical methods.     

Resonance Excitation Rate Coefficient of Ni-Like Tantalum

The ab initio calculations of electron-impact resonant excitation rate coefficients from the ground level to 54 fine-structure levels of 3d94l （1 = s, p, d, f） configurations of Ni-like tantalum ion are performed by using a fully relativistic distorted-wave approximation. The configuration-interaction effects are taken into account. The decays to autoionizing levels possibly followed by autoionization cascades are also included in the calculation. The contributions from doubly-excited intermediate states of Cu-like 31^17n′l′n′l″ （n′ = 4, 5; n″ = 5 - 15） are calculated explicitly, and the contributions from high Rydberg states （n″〉 15） are taken into account by using n-3 scaling law. The present results should be more accurate than the existent calculations.     

The effect of configuration complex on dielectronic recombination process in highly ionized plasmas

This paper analyses the effect of configuration complex on dielectronic recombination （DR） process in highly ionized plasmas （Xe^26＋, Dy^38＋, W^46＋） by using the multiconfiguration relativistic Hartree-Fock method. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. The remarkable difference between the isoelectronic trend of the rate coefficients for DR through 3d^94l4l′ and through 3d^94l5l′ is emphasized. The trend of DR through 3d^94l4l′ shows irregularities at relatively low temperature due to the progressive closing of DR channels as atomic number Z increases.     

Co-like Au52+离子双电子复合的理论研究

基于准相对论Hatree-Fock理论,采用Cowan程序详细计算了Co-like A u52+离子的双电子复合速率系数、自电离几率以及自电离能级.计算结果表明:由于径向波函数的穿透效应使得该离子自电离能级3d84l5s(l=s、 p、d、f)升高,造成能级间隔不随外层激发电子轨道角动量的增加单调减小的异常现象,即Δ(E3d8 4l5d-E3d84l5p)＞Δ(E3d84l5p-E3d84l5s)＞Δ(E 3d84l5f-E3d84l5d);双激发自电离态平均自电离几率具有特定的变化关系;双电子复合速率系数随着电子温度逐渐增加具有共振、高温收敛等特点,且双激发态轨道角动量大且宇称为奇的通道复合速率系数较大,其中辐射衰变通道为3d84fnd-3d9nd 的复合过程占优势,在Te=0.49*"KeV时共振峰αDR=1.01×10-11(cm 3sec-1).     

类氖等电子系列离子基态的双电子复合速率系数研究

使用全相对论组态相互作用方法, 能级-能级细致计算了0.1 E_I ≤ kT_e≤ 10 E_I (E_I是类钠离子基态的第一电离能) 温度范围内类氖离子基态双电子复合(DR)速率系数, 双激发自电离能级考虑了(2s2p)⁷3ln'l', (2s2p)⁷4l4l' 以及(2s2p)⁷4l5l'组态. 对于(2s2p)⁷3ln'l'双激发自电离组态, 轨道角量子数l' >8 的(2s2p)⁷3ln'l'双激发自电离态对双电子复合速率系数的贡献可以忽略不计; (2s2p)⁷3ln'l'双激发自电离组态的高里德堡态对双电子复合速率系数的贡献满足 n'^-3组态-组态外推法, 并且核电荷数越大, 趋于n'^-3标度的n'值越小; 对细致能级计算得到的类氖离子基态的总DR速率系数进行了拟合, 得到类氖离子基态的总DR速率系数随核电荷数 Z和电子温度变化的经验公式, 该拟合公式与细致计算结果的偏差在2%以内, 能较准确的计算任意核电荷数Z的类氖离子在0.1E_I ≤ kT_e ≤ 10E_I电子温度范围的DR速率系数. Burgess-Merts(BM)近似公式不适用于估算低温(kT_e<0.3 E_I)类氖离子的DR速率系数, 在高温(kT_e>2E_I)时, 类氖离子的DR速率系数可以用BM近似公式表示.     

4d 95p 2 configuration in the spectra of in III-Te VI

The radiative 4d ¹⁰5p-4d ⁹5p ² transitions in the spectra of the In III, Sn IV, Sb V and Te VI, ions, belonging to the silver isoelectronic sequence, have been investigated in the range 250–600 Å with high resolution. The energies of most levels of the 4d ⁹5p ² configuration with J = 1/2, 3/2, and 5/2, involved in the transitions to the 4d ¹⁰5p configuration, are found. Along the isoelectronic sequence, the 4d ⁹5p ² configuration passes from the position below the ionization limit 4d ¹⁰ in Te VI to the position above this limit in In III with corresponding autoionization effects. The autoionization widths of levels are measured. The data obtained are compared with the results of calculations by the Hartree-Fock and semiempirical methods.     

Radiative transitions in the system of autoionizing levels of cesium atoms excited by electron impact

We study the energy dependences of electron excitation cross sections of the autoionizing levels (5p ⁵6s ²)² P _3/2 and (5p ⁵5d(³ P)6s)² P _3/2, as well as the autoionization cross sections of cesium atoms in the impact energy range from the excitation threshold to 600 eV. It is established that an increase in the excitation cross section of the ² P _3/2 levels (to 60% of the maximum value) and the deep minimum in the autoionization cross section observed in the energy region of 17–27 eV are caused by the predominance of the radiative decay channel for autoionizing levels with excitation thresholds above 17 eV. The high efficiency of the process is mainly related to the resonance excitation of these levels in the near-threshold energy region.     

Observation of occupied 5d states in f.c.c. Yb metal

We propose experimental evidences for the sd character of the occupied band states of f.c.c. Yb metal. Photoionization cross-section σ¹ in the range 24–65 eV, covering the 5p core electron energies have been measured for both Yb (4ƒ¹⁴6s²5d⁰) and Lu (4ƒ¹⁴6s²5d¹). Both the hv dependence of σ¹ for the Yb valence band and the presence of photoemission resonances above the 5p edges of Lu and Yb indicate the presence of occupied 5d states at the top of the valence band of solid Yb. The Yb 4ƒ σ¹ is presented in order to distinguish the 5d band resonances from the 5p-5d giant dipole autoionization decays. L_{2, 3} X-ray absorption white lines for Yb provide a measure of the 5d bandwidth.     

Extreme ultraviolet and soft x-ray laser emission from Ni-like Nd ions

We use the energy levels, transition probabilities, and effective collision strengths for the states 1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰ and 1s² 2s² 2p⁶ 3s² 3p⁶ 3d⁹ 4 l (l = s, p, d, and f) of a nickel-like Nd ion to determine reduced population for 55 fine-structure levels over a wide range of electron density values (from 10²⁰ to 4 · 10²² cm ⁻³) at various electron plasma temperatures in the range of 1–2 keV. We find the gain coefficients for those transitions with the positive population inversion factor and show their dependences on the electron density.     

Spectra and oscillator strengths of 3p63d9--3p53d10 and 3p63d9--3p63d84p transitions for cobalt-like Sn23+ ion

This paper calculates the spectra and oscillator strengths for highly ionized cobalt-like Sn23+ ions 3p63d9 3p53d10,3p63d9 3p63d84p transitions by using a multi-configuration self-consistent field method program together with the proposed fitting formula.The calculations have a good agreement with observations.     

High gain predictions for Ni-like Gd ion

Atomic structure data and effective collision strengths for 1s² 2s² 2p⁶ 3s² 3p⁶3d¹⁰ and 54 fine-structure levels contained in the configurations 1s² 2s² 2p⁶ 3s² 3p⁶3d⁹4l (l = s, p, d, f) for the nickel-like Gd ion. These data are used in the determination of the reduced population for the 55 fine structure levels over a wide range of electron densities (from 10²¹ to 10²³) and at various electron plasma temperatures. The gain coefficient for those transitions with positive population inversion factor are determined and plotted against the electron density.     

Reduced population and gain coefficient calculations for soft X-ray laser emission from Eu

Energy levels, transition probabilities and effective collision strengths for the 1s² 2s² 2p⁶ 3s² 3p⁶ 3d¹⁰, and the 1s² 2s² 2p⁶ 3s² 3p⁶ 3d⁹ 4l (l=s, p, d, and f) states of nickel-like Eu are used in the determination of the reduced population for 55 fine structure levels over a wide range of electron densities (from 10⁺²⁰ to 4×10⁺²² cm⁻³) and at various electron plasma temperatures.The gain coefficients for those transitions with positive population inversion factor are determined and plotted against the electron density.