Control of the pulse width of a laser-diode end-pumped passively Q-switched solid-state laser

We theoretically and experimentally study different techniques to control the pulse width of a laser-diode-pumped passively Q-switched solid-state laser. It is shown that varying the laser beam radius in the saturable absorber and the pump beam radius in the gain medium provide an efficient means to control the pulse width. The experiments performed on a laser-diode-pumped Nd:YVO₄ laser passively Q-switched by a Cr⁴⁺:YAG saturable absorber are consistent with the theoretical calculations obtained from the rate-equations model, in which the intracavity photon density is assumed to be Gaussian spatial distribution, and the longitudinal variation of the intracavity photon density and the pump beam spatial distribution are also considered.     

Continuous-wave passively mode-locked Nd:YVO<Subscript>4</Subscript>/KTP green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked low-doped Nd:YVO₄ green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO₄ crystal with the Nd³⁺ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.     

Diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

A diode end-pumped passively Q-switched Nd:YVO₄ laser with a transmission-type single-walled carbon nanotube saturable absorber is first demonstrated in this paper. The maximum continuous wave (CW) output power of 477 mW is obtained at the incident pump power of 1490 mW with the output transmission T = 10%, resulting in slope efficiency of 41.3%. For Q-switching operation, the measured pulse duration of 332 ns, the pulse energy of 326 nJ and the peak power of 982 mW are respectively obtained.     

High-peak-power diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser

We report on a passively Q-switched diode-pumped Nd:YVO₄ laser polarized along the a axis (corresponding to the smallest value of emission cross section at 1064 nm), generating 157-μJ pulses with 6.0-ns time duration (>20 kW peak power) and 3.6 W of average power at 1064 nm with good beam quality (M²<1.4). The selection of the polarization was performed by a novel technique relying on the birefringence of the laser crystal and on the misalignment sensitivity of the resonator. Received: 30 September 2002 / Revised version: 22 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +39-382/422583, E-mail: agnesi@ele.unipv.it     

A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption

We have demonstrated a passively Q-switched operation of Nd:GdVO₄ laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ.     

Diode-pumped doubly passively Q-switched Nd:LuVO4/KTP green laser with Cr:YAG and GaAs saturable absorbers

A diode-pumped doubly passively Q-switched intracavity-frequency-doubling Nd:LuVO₄/KTP green laser with Cr⁴⁺:YAG and GaAs saturable absorbers is demonstrated. This laser can generate the shorter pulse width with higher peak power compared with the singly passively Q-switched green laser with Cr⁴⁺:YAG or GaAs saturable absorber. The relations between the pulse symmetry and the ratio of the small-signal transmissions of two saturable absorbers are investigated. By reasonably choosing the small-signal transmissions of both saturable absorbers, the doubly passively Q-switched green laser can generate the much more symmetric pulse profile. The coupled rate equations are used to simulate the passively Q-switched process of the green laser by considering the Gaussian transversal and longitudinal distributions of the intracavity photon density. The numerical results of the equations are consistent with the experimental results.     

Optimization of pulse width of double passively Q-switched lasers with GaAs and Cr-doped saturable absorbers

Compared with a single passively Q-switched laser, a double passively Q-switched laser with a GaAs saturable absorber and a Cr⁴⁺-doped saturable absorber can produce more symmetric and shorter pulses with high pulse peak power. New normalized coupled rate equations for a double passively Q-switched laser with both a GaAs saturable absorber and a Cr⁴⁺-doped saturable absorber are solved numerically, where the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined. The Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density are considered. The optimization of a double passively Q-switched laser to obtain the shortest pulse width is performed, and a group of general curves are generated for the first time. The curves clearly show the dependence of the optimal normalized parameters on the parameters of the gain medium, the GaAs saturable absorber, the Cr⁴⁺-doped saturable absorber and the spatial distributions of the intracavity photon density. Sample calculations for a diode-pumped Nd³⁺:YVO₄ laser with both a GaAs saturable absorber and a Cr⁴⁺:YAG saturable absorber are presented to demonstrate the use of the curves and the related formulas.     

Millijoule intracavity OPO driven by a passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with AlGaInAs quantum-well saturable absorber

We originally demonstrate the use of an AlGaInAs periodic quantum-well absorber to achieve a quasi-continuous-wave (QCW) diode-pumped passively Q-switched Nd:YVO₄ laser with an intracavity optical parametric oscillator (OPO). With a diode-pumping energy of 35 mJ, the output pulse energy and the pulse width at 1573 nm are found to be 1.58 mJ and 26 ns, respectively. The pulse repetition rate can be up to 100 Hz with the overall OPO beam quality M² factor to be better than 1.5.     

A passively mode-locked Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

We report the mode locking of a diode pumped Nd:YVO₄ crystal laser by using a transmission-type single-walled carbon nanotube saturable absorber. The laser operated at 1064 nm pumped by a fiber coupled laser diode with the cavity length of 1826 mm, generated a pulse width of 14 ps at a repetition rate of 82 MHz. The output power of 120 mW was obtained at the absorbed pumping power of 1400 mW.     

High-repetition-rate megawatt millijoule pulses from a Nd:YVO<Subscript>4</Subscript> laser passively Q-switched by a semiconductor saturable absorber

We exploit an AlGaInAs periodic quantum-well absorber with a large modulation strength to realize a multi-mJ passively Q-switched Nd:YVO₄ laser with a repetition rate up to 200 Hz. At a pump energy of 34 mJ, the output pulse energy and the peak power are found to be 3.5 mJ and 1.1 MW, respectively. The fluctuation of the output pulse energy is generally less than ±2%.     

Passively Q-switched laser operation in a composite Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> crystal with a single-walled carbon nanotube saturable absorber

By using a piece of single-walled carbon nanotube saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser has been demonstrated for the first time. The maximum average output power and the shortest pulse width are 1220 mW and 103 ns at the incident pump power of 5.04 W for a 10% transmission of the output coupler. The highest pulse repetition rate of 415.6 kHz and the largest single-pulse energy of 2.94 μJ are also obtained. The composite Nd:YVO₄ crystal has more excellent laser performance than the normal Nd:YVO₄ crystal at 1064 nm.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

High slope efficiency and low threshold in a laser-diode-pumped passively Q-switched ion-implanted Nd:YVO<Subscript>4</Subscript> planar waveguide laser with GaAs saturable absorber

A passively Q-switched waveguide laser, to our knowledge, has been firstly demonstrated in Nd: YVO₄ crystal formed by 3 MeV Si⁺ ion implantation at a dose of 1 × 10¹⁵ ions/cm² at room temperature, in which GaAs was used as saturable absorber. The dependences of the average output power, pulse width, pulse repetition rate on absorbed pump power have been measured at different output plane mirror transmissions. At an absorbed pump power of 78.8 mW and output transmission of 20%, the shortest pulse width of 3.88 ns was obtained, corresponding to the peak power and single pulse energy of 212 W and 0.82 μJ, respectively. The threshold pump power was as low as 40 mW, and the slope efficiency was about 64.5% when the absorbed pump power was lower than 70 mW.     

Diode-pumped passively Q-switched and Q-switch mode-locked Nd:YVO<Subscript>4</Subscript> laser using single-wall carbon nanotube based saturable absorber

We present the performance of diode end-pumped Nd:YVO₄ laser in Q-switched and Q-switched mode-locking oscillation using a single-walled carbon nanotube based saturable absorber, which was fabricated using similar vertical evaporation technique. The average output power, repetition rate and pulse width of the Q-switched laser output were studied with different output couplers. The maximum average output power was 130 mW. For Q-switched mode-locking operation, the repetition rate of the mode-locked pulses concentrated in the Q-switched envelope was 58 MHz. The repetition rate of the Q-switched envelope maintained at 18 kHz, while the pulse width decreased along with the increasing of pump power. The maximum average output power was 53 mW.     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

7 W laser diode end-pumped Nd:YVO<Subscript>4</Subscript> passively mode-locking laser with a semiconductor saturable absorber mirror

A powerful and stable LD end pumped Nd:YVO₄ passively mode-locking oscillator by SESAM was demonstrated. At the pumping power of 30 W, 7 W output was obtained with repetition rate of 79.5 MHz and pulse duration of 15 ps. The beam quality factors M ² were measured to be 1.30 and 1.33, respectively.     

Optimization of passively Q-switched laser with V:YAG saturable absorber

By considering the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density, the coupled rate equations for a diode-pumped passively Q-switched laser with V³⁺:YAG saturable absorber are given. These coupled rate equations are solved numerically and the key parameters of an optimally coupled passively Q-switched laser with V³⁺:YAG at 1342 nm are determined. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched pulse. The optimal calculations for a diode-pumped passively Q-switched a-Nd:GdVO₄ laser with V³⁺:YAG saturable absorber are presented to demonstrate the numerical simulation applicable.     

High power passively mode-locked Nd:YVO<Subscript>4</Subscript> laser using graphene oxide as a saturable absorber

We report on a passively mode-locked Nd:YVO₄ laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ.