Energy efficiency of femtosecond laser ablation of refractory metals

We present the results of an experimental study of the ablation energy thresholds and ablated mass for a number of refractory metals (Ti, Zr, Nb, Mo) by femtosecond (τ _0.5 = 45–70 fs) exposed to laser pulses in the ultraviolet — near infrared range (λ = 266, 400, 800 nm) under atmospheric conditions and under vacuum (p ~ 10^–2 Pa). We have analyzed the ablation efficiency (mass yield per unit energy of the acting coherent radiation) and ablation energy thresholds vs. the laser pulse duration and photon energy.     

CdS plume composition and dynamics of neutral species upon ablation with 532 nm laser light

The neutral species present in CdS ablation plumes upon nanosecond 532 nm laser irradiation at a moderate fluence of 0.5–0.75 J cm⁻² have been studied. Neutral Cd _n S _m clusters have been identified, some as large as (CdS)₃₃₋₃₄ (1–2 nm in diameter). The analysis of the dynamics of neutral species shows an expansion with two components that differ both in composition and dynamics. A fast, high kinetic energy component, dominated by S₂ which acquires free-flow conditions at short distances from the target, is followed by a slower component characterized by similar speeds for all species. This slower component shows dynamic features that are expected to favor aggregation processes leading to effective cluster formation.     

Study of opto-mechanical characteristics of interaction of ultrashort laser pulses with polymer materials

The opto-mechanical characteristics, such as the specific mechanical recoil momentum, the specific impulse, and the energy efficiency, of the laser ablation of flat polymer targets ((C₂F₄) _n , (CH₂O) _n ) have been determined experimentally for the first time for the case of excitation with femtosecond pulses (τ ∼ 45–70 fs) of UV-IR (λ ∼ 266, 400, 800 nm) laser radiation (I ₀ up to 10¹⁵ W/cm²) under normal atmospheric and vacuum (p ∼ 10⁻⁴ mbar) conditions. The efficiency of mechanical recoil momentum generation is analyzed for various regimes of the laser irradiation.     

Photoluminescence of CuInS<Subscript>2</Subscript> single crystals grown by traveling heater and chemical vapor transport methods

Photoluminescence of CuInS₂ single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS₂ grown by CVT and THM, respectively. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 2, pp. 232–236, March–April, 2009.     

Nonlinear transformation of a spectrum of femtosecond laser pulses in a gas-filled microcapillary

Features of light pulse propagation and nonlinear optical transformation of the spectrum generated by titanium-sapphire laser pulses (τ_0.5 = 27 fs, λ₀ = 790 nm) have been studied experimentally in a 50-cm cylindrical hollow waveguide (microcapillary with 280-μm diameter core) filled with gaseous molecular nitrogen and helium. Stable guided propagation of light pulses with an intensity of ~1.5⋅10¹⁴ W/cm² in the fundamental EH₁₁ mode of the gas-filled capillary has been demonstrated. Exact focusing of the laser light made it possible to obtain rather high relative (≥95%) and absolute (~60%) energy transmission efficiencies for the pulses at gas pressures equal to or lower than 760 Torr. A method to determine the nonlinear phase shift of the pulses has been proposed. Values of the nonlinear refractive index n₂ ≈ 4.5⋅10^–23 cm²/(W⋅Torr) (N₂) and n₂ ≈ 2.8⋅10^–23 cm²/(W⋅Torr) (He) have been found. A short-wavelength shift in addition to the Kerr nonlinearity has been shown to be contributed by the generated electron plasma at high pulse intensities (≥10¹⁴ W/cm²).     

Dielectric behavior of sodium borate glasses

The dielectric constant and the electrical conductivity of the transparent glasses in the composition 3Na₂O-7B₂O₃ (NBO) were investigated in the 100 Hz–10 MHz frequency range at various temperatures. The activation energy associated with the electrical relaxation determined from the electric modulus spectra was found to be 0.76 ± 0.02 eV, close to that (0.74 ± 0.02 eV) obtained from DC conductivity studies. The frequency-dependent electrical conductivity was analyzed using Jonscher’s power law. Temperature-dependent behavior of the frequency exponent (n) suggested that the correlated-barrier hopping model was the most appropriate to rationalize the electrical transport phenomenon in NBO glasses.     

Optical and IR study of Li2O–CuO–P2O5 glasses

Infrared (IR) and UV spectra of ternary Li₂O–CuO–P₂O₅ glasses in two series Li₂O(65−X)%–CuO(X%)–P₂O₅(35%), X = 20, 30, 40 and Li₂O(55−X)%–CuO(X%)–P₂O₅(45%), X = (10, 20, 30) were studied. Infrared (IR) investigations showed the metaphosphate and pyrophosphate structures and with increase of CuO content in metaphosphate glass, the skeleton of metaphosphate chains is gradually broken into short phosphate groups such as pyrophosphate. IR spectra showed one band at about 1,220 and 1,260 cm⁻¹ for P₂O₅(35%) and P₂O₅(45%) series, respectively, assigned to P=O bonds. For CuO additions ≤20 mol%, the glasses exhibit two bands in the frequency range 780–720 cm⁻¹ which are attributed to the presence of two P–O–P bridges in metaphosphate chain. But for CuO addition ≥30 mol%, the glasses exhibit only a single band at 760 cm⁻¹ which is assigned to the P–O–P linkage in pyrophosphate group. In optical investigations, absorption coefficient versus photon energy showed three regions: low energy side, Urbach absorption, and high energy side. In Urbach’s region, absorption coefficient depends exponentially on the photon energy. At high energy region, optical gap was calculated and investigations showed indirect transition in compounds and decreases in optical gap with increases of copper oxides contents that is because of electronic transitions and increasing of nonbridging oxygen content.     

Spatiotemporal spectroscopic diagnostics of a pulse-periodic strontium vapor laser

Results of spectroscopic investigations into plasma of a pulse-periodic strontium vapor laser operating in the superradiance mode on the infrared transition at λ = 6.45 μm are presented. The method of determining the electron temperature and concentration as well as the gas temperature – T _e , n _e , and T _g – based on measuring the absolute intensities of some SrI and SrII and buffer gas (helium or neon) spectral lines is used. Time dependences of the line intensities during a current pulse (τ = 150 ns) and near afterglow (up to 3 μs) are obtained under conditions of non-equilibrium plasma ionization and recombination. The optical system collects radiation from the entire length of the plasma column by means of separating radial volume zones, includingthe central zone and the zone closer to the walls, with the monochromator slit. The results obtained allow us not only to calculate T _e , n _e , and T _g values, but also to trace the spatiotemporal plasma evolution.     

Nonlinear refractive index of RECOB (RE = Gd and La) crystals

The Z-scan technique is employed to obtain the nonlinear refractive index (n ₂) of the Ca₄REO(BO₃)₃ (RECOB, where RE = Gd and La) single crystals using 30 fs laser pulses centered at 780 nm for the two orthogonal orientations determined by the optical axes (X and Z) relative to the direction of propagation of the laser beam (k//Y// crystallographic b-axis). The large values of n ₂ indicate that both GdCOB and LaCOB are potential hosts for Yb:RECOB lasers operating in the Kerr-lens mode locking (KLM) regime.     

Chemical, morphological and chromatic behavior of mural paintings under Er:YAG laser irradiation

Several pigments (malachite CuCO₃⋅Cu(OH)₂, azurite 2CuCO₃⋅Cu(OH)₂, yellow ochre (goethite α-FeOOH, gypsum CaSO₄⋅2H₂O), St. John’s white CaCO₃ formed from slaked lime) and respective mural paintings specimens were subjected to the free-running Er:YAG laser radiation in order to study their damage thresholds, in a broad range of laser fluences, both in dry and wet conditions. The specimens’ damage thresholds were evaluated by spectroscopic methods, colorimetric measurements and microscopic observation. The pigments containing –OH groups were found to be more sensitive than St. John’s white; hence the most sensitive paint layers in dry conditions are those containing malachite, azurite (both 1.3 J/cm²) and yellow ochre (2.5 J/cm²) as compared to the ones containing St. John’s white (15.2 J/cm²). The presence of wetting agents (w.a.) attenuated the pigments chemical alteration. The damage thresholds of all the paint layers, in presence of w.a., were found to be around 2.5 J/cm². The alteration was caused by thermo-mechanical damage and by binding medium ablation of a fresco and a secco prepared specimens, respectively.     

Photoluminescence of fluoroacrylate polymers impregnated with Eu(bta)<Subscript>3</Subscript> using supercritical CO<Subscript>2</Subscript>

Optical properties (photoluminescence and absorption) of Eu(bta)₃(B) _n (B = H₂O or 1,10-phenanthroline) polycrystalline powders and fluoroacrylate polymers (FAPs) impregnated with these compounds using supercritical CO₂ (SC CO₂) were investigated. It was established that impregnation of Eu(bta)₃phen into the FAPs using an SC CO₂ solution was difficult to achieve. The type of B (ancillary ligand) and the polymer matrix were shown to influence the temperature quenching of photoluminescence of Eu³⁺ ions in the range 25–100°C. A comparative analysis of quantum yields (λ_ex = 300 and 380 nm) and photoluminescence decay times (λ_ex = 337.1 nm) for Eu(bta)₃B _n and for Eu(bta)₃B _n -doped FAPs was performed.     

Spectroscopic properties of Pr<Superscript>3 + </Superscript>-doped erbium oxalate crystals

Spectroscopic properties of praseodymium ions-doped erbium oxalate (Er₂(C₂O₄)₃ · nH₂O) crystals have been investigated. The crystals were grown by hydro silica gel method under suitable pH conditions and by single diffusion method. The well-grown crystals are bright and transparent. The dark green colour of these crystals changes with the variation of the concentrations of the dopant ions. The absorption spectra have been measured in the region 200–800 nm at room temperature. Judd–Ofelt intensity parameters for f–f transitions of the Pr³⁺ ions have been determined as Ω₂ = 166.7, Ω₄ = 1.103 and Ω₆ = 2.898. Analyses of the absorption spectra also show a possible energy transfer from the host material to the dopant.     

Optical absorption behavior of Tl<Superscript>+</Superscript> DOPED Rb(Br<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>I<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>) system

The optical absorption behavior of Tl⁺ doped Rb(Br_1–x I _x ) mixed crystals (with x = 0.00, 0.05, and 0.10) grown under vacuum by slow cooling from the melt has been studied. Absorption spectra of the mixed crystals recorded at room temperature showed that the characteristic A-absorption band of Tl⁺ ions in the Rb(Br_1–x I _x ) system (0.1 mol. %) with x = 0.00 (i.e., RbBr:Tl⁺) broadened with the iodine content towards the low energy side. Changes in the absorption spectra of the mixed crystals are due to creation of some complex centers involving Tl⁺, Br^–, and I^- ions with energy levels inside the band gap while forming the mixed crystal. The absorption spectra of gamma-irradiated mixed crystals showed the F-band, which shifted towards the low energy side due to the existence of iodine ions in the mixed crystals.     

Interaction of ethidium bromide and caffeine with DNA in aqueous solution

Two component (ethidium bromide–caffeine, ethidium bromide–DNA) and three component (ethidium bromide–caffeine–DNA) systems in aqueous saline (0.01 M NaCl) phosphate buffer solutions (pH 6.86, T = 298 K) are studied spectrophotometrically. The equilibrium constants for dimerization of caffeine, K _D  = 1.22 ± 2 M⁻¹, and for heteroassociation of ethidium bromide with caffeine, K = 71 ± 8 M⁻¹, in ethidium bromide–caffeine systems are determined. When the concentration of caffeine is increased, the dynamic equilibrium of the solution shifts toward formation of heterocomplexes which are, presumably, stabilized by dispersive and hydrophobic interactions of chromophores. The equilibrium parameters for ethidium bromide complex formation with DNA are calculated: the coupling constant for the dye with the biopolymer, K ₁ = (232 ± 16)⋅103 M⁻¹, and the number of base pairs of the biopolymer participating in bonding with the ligand, n ₁ = 3.6 ± 0.2, are calculated. Given these values, it is suggested that under these experimental conditions there are two types of bonding between ethidium bromide and the nucleic acid — intercalation and “external” bonds. A McGhee–von Hippel model for a three component system and the numerical values of the parameters for molecular complex formation in two component systems are used to calculate the bonding constant for caffeine with DNA, K ₂ = 127 ± 30 M⁻¹, and the number of base pairs of DNA which bond with caffeine, n ₂ = 1.7 ± 0.2. The concentrations of ethidium bromide and caffeine in the composition of two and three component complexes are calculated as functions of the nucleic acid content in the solution. An analysis of the concentration dependences shows that heteroassociation of ligands has a significant effect on the reduction in the concentration of ethidium bromide–DNA complexes in a three component system for low DNA concentrations, while at high DNA concentrations the bonding of caffeine with the biopolymer has this effect. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 143–151, January–February 2009.     

Luminescence of CaGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>:Eu crystals

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa₂Se₄:Eu crystals in the temperature range 77–400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f⁶ 5d–4f⁷ (⁸S_7/2) of the Eu²⁺ ions. From the temperature dependence of the intensity (log I–10³/T), we determined the activation energy (E _a = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu²⁺ ions in the CaGa₂Se₄ crystal found from the luminescence decay kinetics is 3.8 μsec. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 1, pp. 112–116, January–February, 2009.     

Synthesis, crystal structure, thermal and dielectric properties of bis(p-phenylenediammonium) chloride hexachlorobismuthate(III) monohydrate [C6H4(NH3)2]2ClBiCl6.H2O

Synthesis, crystal structure, and dielectric properties of [C₆H₄(NH₃)₂]₂ClBiCl₆.H₂O are reported. The compound crystallizes in the monoclinic system with space group P2₁/n. The unit cell dimensions are a = 9.836(5), b = 19.582(5), c = 13.082(5) ?, β = 104.731(5)° with Z = 4. The atomic arrangement can be described by an alternation of organic and inorganic layers. The anionic layer is built up of octahedral of [BiCl₆]^3- arranged in sandwich between the organic layers. The crystal packing is governed by means of the ionic N–H···Cl hydrogen bonds, forming a three-dimensional network. The dielectric properties have been investigated at temperature range from 297 to 410 K at various frequencies (10 Hz–100 kHz). Dielectric studies were performed to confirm results obtained with thermal analysis. The evolution of dielectric constant as a function of temperature and frequency of single crystal has been investigated in order to determine some related parameters.     

Investigation of temperature-dependent electrical properties of p-VOPc/n-si heterojunction under dark conditions

An organic/inorganic heterojunction p-VOPc/n-Si was fabricated and its electrical properties were investigated. Temperature-dependent dark current–voltage (I–V) characteristics of the heterojunction exhibited rectification behaviour with a rectification ratio of 405 at ±1 V and room temperature. The current–voltage characteristics of the cell showed ohmic conduction at low voltages followed by a space charge-limited current (SCLC) conduction dominated by an exponential trap distribution at higher voltages. At room temperature, the series and shunt resistances were found to be approximately 1.4 and 100 kΩ, respectively. Diode ideality factor n was found to be 3.2 at room temperature and dropped to 1.9 at 363 K. Room temperature mobility of vanadyl phthalocyanine (VOPc) was extracted from the I–V characteristics in the SCLC region and was found approximately 15.5 × 10⁻³ cm² V⁻¹ s⁻¹. The effective barrier height, Ф_B, was estimated as 0.77 eV. The effect of temperature, on various heterojunction parameters was recorded under dark conditions and at temperatures ranging from 300 to 363 K.     

Electrical relaxation in proton conductor composites based on (NH4)H2PO4/TiO2

We report on electrical relaxation measurements of (1 − x)NH₄H₂PO₄-xTiO₂ (x = 0.1) composites by admittance spectroscopy, in the 40-Hz–5-MHz frequency range and at temperatures between 303 and 563 K. Simultaneous thermal and electrical measurements on the composites identify a stable crystalline phase between 373 and 463 K. The real part of the conductivity, σ’, shows a power-law frequency dependence below 523 K, which is well described by Jonscher’s expression , where σ ₀ is the dc conductivity, ω _p /2π = f _p is a characteristic relaxation frequency, and n is a fractional exponent between 0 and 1. Both σ ₀ and f _p are thermally activated with nearly the same activation energy in the II region, indicating that the dispersive conductivity originates from the migration of protons. However, activation energies decrease from 0.55 to 0.35 eV and n increases toward 1.0, as the concentration of TiO₂ nanoparticles increases, thus, enhancing cooperative correlation among moving ions. The highest dc conductivity is obtained for the composite x = 0.05 concentration, with values above room temperature about three orders of magnitude higher than that of crystalline NH₄H₂PO₄ (ADP), reaching values on the order of 0.1 (Ω cm)^− 1 above 543 K.     

Fabrication of a nanoparticle TiO<Subscript>2</Subscript> photoelectrochemical cell utilizing a solid polymeric electrolyte of PAN–PC–LiClO<Subscript>4</Subscript>

A nanoparticle TiO₂ solid-state photoelectrochemical cell utilizing as a solid electrolyte of poly(acrylonitrile)–propylene–carbonate–lithium perchlorate (PAN–PC–LiClO₄) has been fabricated. The performance of the device has been tested in the dark and under illumination of 100-mW cm⁻² light. A nanoparticle TiO₂ film was deposited onto indium tin oxide-covered glass substrate by controlled hydrolysis technique assisted with spin-coating technique. The average grain size for the TiO₂ film is 76 nm. LiClO₄ salt was used as a redox couple. The room temperature conductivity of the electrolyte is 4.2 × 10⁻⁴ S cm⁻¹. A graphite electrode was prepared onto a glass slide by electron beam evaporation technique. The device shows the rectification property in the dark and shows the photovoltaic effect under illumination. The best J _sc and V _oc of the device were 2.82 μA cm⁻² and V _oc of 0.58 V, respectively, obtained at the conductivity of 4.2 × 10⁻⁴ S cm⁻¹ and intensity of 100 mW cm⁻². The J _sc was improved by about three times by introducing nanoparticle TiO₂ and by using a solid electrolyte of PAN–PC–LiClO₄ replacing PVC–PC–LiClO₄ in the device. The current transport mechanism of the cell is also presented in this paper.     

Picosecond laser ablation of SiO2 layers on silicon substrates

In this work, we report on laser ablation of thermally grown SiO₂ layers from silicon wafer substrates, employing an 8–9 ps laser, at 1064 (IR), 532 (VIS) and 355 nm (UV) wavelengths. High-intensity short-pulse laser radiation allows direct absorption in materials with bandgaps higher than the photon energy. However, our experiments show that in the intensity range of our laser pulses (peak intensities of <2×10¹² W/cm²) the removal of the SiO₂ layer from silicon wafers does not occur by direct absorption in the SiO₂ layer. Instead, we find that the layer is removed by a “lift off” mechanism, actuated by the melting and vaporisation of the absorbing silicon substrate. Furthermore, we find that exceeding the Si melting threshold is not sufficient to remove the SiO₂ layer. A second threshold exists for breaking of the layer caused by sufficient vapour pressure. For SiO₂ layer ablation, we determine layer thickness dependent minimum fluences of 0.7–1.2 J/cm² for IR, 0.1–0.35 J/cm² for VIS and 0.2–0.4 J/cm² for UV wavelength. After correcting the fluences by the reflected laser power, we show that, in contrast to the melting threshold, the threshold for breaking the layer depends on the SiO₂ thickness.