Bi-induced vibrational modes in GaAsBi

We have studied GaAs_1−xBi_x (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm⁻¹ and 214 cm⁻¹ with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm⁻¹ is identified as originating from substitutional Bi at the As site in GaAsBi.     

Structural properties and Raman spectroscopy of orthorhombic (Eu1−xPrx)0.6Sr0.4MnO3 (0≤x≤1.0)

The effect of Pr doping on structural properties and room temperature Raman spectroscopy measurements is investigated in manganites (Eu_1−xPr_x)_0.6Sr_0.4MnO₃ (0≤x≤1.0) with fixed carrier concentration. The result of the Rietveld refinement of x-ray powder diffraction shows that these compounds crystallize in an orthorhombic distorted structure with a space group Pnma. It is evident that, with increasing Pr substitution, three types of orthorhombic structures can be distinguished. The phonon frequencies of the three main peaks, in room temperature Raman-scattering measurements, have been discussed together with their structural characteristics, such as bond-length, bond-angles, and the change of orthorhombic structure type. With the increase of Pr content, the mode at 491  cm⁻¹ also shows a corresponding change. A step effect becomes evident, which seems to indicate the close dependence between the frequency shift of this mode and the change in crystal symmetry. This further supports the notion that the mode at 491  cm⁻¹ is closely correlated with the Jahn–Teller distortion. Moreover, we have found that the lowest frequency peak (assigned as an A_1g phonon mode) depends linearly on the tolerance factor t.     

Room-temperature electrosynthesized ZnO thin film with strong (0 0 2) orientation and its optical properties

ZnO thin film with strong orientation (0 0 2) and smooth surface morphology was electrosynthesized on ITO-coated glass substrate at room temperature under pulsed voltage. Photoluminescence (PL) shows two obvious peaks: violet band and strong green band. The former is due to the free-excitonic transition and the latter is believed to arise from the single ionized oxygen vacancy (V_O⁺). Raman scattering reveals that the 580 cm⁻¹ mode and the shoulder peak mode at 550 cm⁻¹ originate from the N-related local vibration mode (LVM) and E₁ (LO) mode, respectively.     

Infrared spectral study of molecular vibrations in amorphous, nanocrystalline and AlO(OH) · αH2O bulk crystals

Amorphous, nanocrystalline, and bulk AlO(OH) · xH₂O crystals have six fundamental modes (FM) of vibration in a nonlinear AlO(OH) molecular structure. Most of them appear in groups of four IR and Raman bands. Their positions and relative intensities differ significantly in three specimens. The nanocrystals (monoclinic structure with z=8 molecules per unit cell) have four OH stretching bands at values enhanced by up to 360 cm⁻¹ at 3120, 3450, 3560 cm⁻¹ in comparison to those in bulk crystals or amorphous specimens. The first two bands are broad, bandwidth Δν_1/2200 to 350 cm⁻¹, while the other two are sharp, Δν_1/290 cm⁻¹. The sharp bands shift to 3525 and 3595 cm⁻¹ after heating the sample at 100°C. They no longer appear after heating at 300 or 500°C for 2 h (the specimen decomposes to Al₂O₃), leaving behind only two bands at 3100 and 3400 cm⁻¹. A Δν_1/2 value of 500 cm⁻¹ appears in the 3400 cm⁻¹ in a delocalized distribution of H atoms. Two bands also occur at 3098 and 3300 cm⁻¹ in bulk crystals (orthorhombic structure with z=4) or at 2990 and 3515 cm⁻¹ in an amorphous sample. More than one bands appear in a FM vibration in occurrence of sample in more than one conformers. The amorphous sample has approximately the same conformer structure as the bulk crystals. An amorphous surface structure exists in nanocrystals with a group of three bands at 1420, 1510 and 1635 cm⁻¹ in an interconnected network structure. It encapsulates the nanocrystals in an amorphous shell. Its volume fraction, 33% estimated from the integrated intensity in three bands, determines 2.2 nm thickness in the shell in spherical shape of nanocrystals in 35 nm diameter.     

Microwave and low-frequency vibrational spectra of bullvalene

The microwave spectrum of bullvalene has been investigated in the region 18–40 GHz. In addition to transitions in the ground vibrational state, transitions arising from five excited vibrational states below 600 cm⁻¹ have also been observed. A combination of microwave intensity measurements and infrared and Raman data has been utilized to assign these vibrations. Three of the vibrations are E-type modes at 241, 355, and 588 cm⁻¹. One is an A₁-type mode at 445 cm⁻¹, and another is an A₂-type at 266 cm⁻¹. The microwave spectrum indicates the presence of a first-order Coriolis interaction for the E modes at 241 and 588 cm⁻¹. The first-order Coriolis coupling constant q = 0.557 MHz for the 241 cm⁻¹ vibration. The spectral results are consistent with C_3v symmetry for bullvalene.     

Further development of Raman Microprobe spectroscopy for characterization of char reactivity

The effect of heat treatment on reactivity of cellulose char was investigated, using two methods: (1) Raman Microprobe spectroscopy analysis (RMA) and (2) thermogravimetric analysis (TGA). The heat-treatment was in the temperature range of 600–2600 °C, temperature prevailing in combustion of coal-chars. In the RMA, first- and second-order Raman spectra in the range of 800–2000 and 2000–3600 cm⁻¹, respectively, were measured for all samples. In the first-order Raman spectra, the following bands have been observed: D band and G (at 1350 and 1590 cm⁻¹ respectively), 1150 and 1450 cm⁻¹. In the second-order Raman spectra, four bands have been observed at 2450, 2700, 2940 and 3250 cm⁻¹. Both first- and second-order Raman spectra were fitted by Lorentzian functions. The Lorentzian parameters (bandwidth and intensity ratio) showed significant changes with heat treatment, which is consistent with structural modification. Also, from TGA experiments we observed the expected significant influence of heat treatment on char reactivity. Attempts were made to correlate the Lorentzian parameters with char reactivity. A good correlation was found between the 2940 cm⁻¹ bandwidth in the second-order Raman spectrum and char reactivity, confirming the strong connection between char structure and its reactivity, and illustrating the usefulness of RMA in such studies.     

Fourier Transform Spectroscopy of theYΣ–XΠiTransition of CuO

TheY²Σ⁺–X²Π_inear-infrared electronic transition of CuO was observed at high resolution for the first time. The spectrum was recorded with the Fourier transform spectrometer associated with the McMath–Pierce Solar Telescope at Kitt Peak. The excited CuO molecules were produced in a low pressure copper hollow cathode sputter with a slow flow of oxygen. Constants for theY²Σ⁺states of CuO are:T₀= 7715.47765(54) cm⁻¹,B= 0.4735780(28) cm⁻¹,D= 0.822(12) × 10⁻⁶cm⁻¹,H= 0.46(10) × 10⁻¹⁰cm⁻¹, γ = −0.089587(42) cm⁻¹, γ_D= 0.1272(79) × 10⁻⁶cm⁻¹,b_F= 0.12347(22) cm⁻¹, andc= 0.0550(74) cm⁻¹. ImprovedX²Π_iconstants are also presented.     

Raman scattering study of reduced Er:LiNbO3 crystals

Raman spectra of as-grown and reduced (or annealed) Er:LiNbO₃ crystals, which have different cut orientations, varied Li/Nb ratio, and different Er-doping levels of 0.2, 0.4, 0.6, 1.0, and 2.0 mol%, were recorded at room temperature over a wavenumber range of 50–1000 cm^-1 by use of backward scattering geometries. The spectra are assigned on the basis of their Raman scattering features and previous relevant work. A weak but well-resolved peak around 633 cm^-1 appears in the E(TO) spectra that were recorded under the configuration of X(ZY)X̄(for an X-cut sample) or Y(ZX)Ȳ(for a Y-cut sample) for all crystals studied. The appearance of this peak in the E(TO) spectrum provides further evidence for a previous attribution of this peak to E(TO₉) mode. Some additional peaks distributed in the low wavenumber region ranging from 101–137 cm^-1 are attributed to Er³⁺ fluorescence with a wavelength range of 490.41–491.3 nm. The reduction effects include a significant drop of the Raman scattering intensity and a slight narrowing instead of a broadening in the linewidth. The reduction procedure hardly affects the spectral shape and the wavenumber of most of the phonons. The anneal effect is similar to the reduction effect and both effects are not as obvious as the vapor transport equilibration (VTE) effect. In addition, the present Raman scattering result provides evidence for our earlier reported individual result on light-induced diffraction from strongly reduced Er:LiNbO₃ crystals. PACS 42.70.Hj; 81.05.-t; 63.20.-e; 78.30.-j.     

Signatures of epitaxial graphene grown on Si-terminated 6H-SiC (0 0 0 1)

Epitaxial graphene layers thermally grown on Si-terminated 6H-SiC (0 0 0 1) have been probed using Auger electron spectroscopy, Raman microspectroscopy, and scanning tunneling microscopy (STM). The average multilayer graphene thickness is determined by attenuation of the Si (L₂₃VV) and C (KVV) Auger electron signals. Systematic changes in the Raman spectra are observed as the film thickness increases from one to three layers. The most striking observation is a large increase in the intensity of the Raman 2D-band (overtone of the D-band and also known as the G′-band) for samples with a mean thickness of more than ∼1.5 graphene layers. Correlating this information with STM images, we show that the first graphene layer imaged by STM produces very little 2D intensity, but the second imaged layer shows a single-Lorentzian 2D peak near 2750 cm⁻¹, similar to spectra acquired from single-layer micromechanically cleaved graphene (CG). The 4-10 cm⁻¹ higher frequency shift of the G peak relative to CG can be associated with charge exchange with the underlying SiC substrate and the formation of finite size domains of graphene. The much greater (41-50 cm⁻¹) blue shift observed for the 2D-band may be correlated with these domains and compressive strain.     

Far-infrared dielectric functions and phonon spectra of alloys determined by spectroscopic ellipsometry

We have used spectroscopic ellipsometry to determine the complex dielectric function of a series of ternary Be_xZn_1−xTe thin films grown by molecular beam epitaxy. The II–VI semiconductor alloys were grown on InP substrates that had an InGaAs buffer layer. After the growth, X-ray diffraction experiments were performed in order to determine the alloy concentration. A standard inversion technique was used to obtain the dielectric functions from the measured ellipsometric spectra, obtained between 2000 nm (5000 cm⁻¹) and 40,000 nm (250 cm⁻¹). By modelling the dielectric function as a collection of oscillators, representing longitudinal and transverse optical phonons of the Be_xZn_1−xTe lattice, we were able to recover the phonon spectra for this alloy system. It is argued that the additional phonon modes that are obtained from ellipsometry are best understood from the recently-proposed percolation model.     

Determination of the Splitting of the 6a0 and 6b0 Bands of C-Hexadeuterobenzene in a Supersonic Jet

By using resonance-enhanced two-photon ionization, rotationally resolved spectra of the 6¹₀ band of ¹²C₆D₆ and (¹³C¹²C₅D₆ molecules have been obtained for the first time at a rotational temperature of 0.7 K in a pulsed supersonic beam. From the former, the values of B″ = 0.1573 ± 0.0008 cm⁻¹, B′ = 0.1508 ± 0.0008 cm⁻¹, and ξ′ = −0.412 ± 0.050 have been derived for rotational and Coriolis constants in the lower and upper levels of ¹²C₆D₆. Also, the spectra corresponding to ¹²C₆H₆ and ¹³C¹²C₅H₆ have been measured and the values B″ = 0.1892 ± 0.0008 cm⁻¹, B′ = 0.1815 ± 0.0008 cm⁻¹, and ξ′ = −0.586 ± 0.050 have been obtained for ¹²C₆H₆, in agreement with previous results. Rotational constants of ¹³C labeled benzene molecules have been geometrically deduced from the constants obtained. Experimental isotopic shifts of the vibronic origins of the 6a¹₀ and 6b¹₀ bands have been determined. There is agreement with previous ¹³C-benzene-h₆ data. The present results are −0.91 ± 0.05 and 3.09 ± 0.05 cm⁻¹ for ¹³C¹²C₅D₆ and −1.64 ± 0.05 and 2.64 ± 0.05 cm⁻¹ for ¹³C¹²C₅H₆. The splittings of vibrational modes 6b and 6a in the ¹B_2u state are 4.00 ± 0.10 cm⁻¹ for ¹³C¹²C₅D₆ and 4.28 ± 0.10 cm⁻¹ for ¹³C¹²C₅H₆.     

The spectra and structure of indium iodide: The rotational and vibrational constants of the A0 state

The rotational constants of the A0⁺ state of InI are reported for the first time as B_e = 0.038077 cm⁻¹ and α_e = 0.0002373 cm⁻¹, while T_e = 24402.91 cm⁻¹ for the A0⁺-X0⁺ transition. Accurate vibrational constants for both the A0⁺ and X0⁺ states are computed from the derived band origins.     

Structural properties of 10 μm thick InN grown on sapphire (0001)

The structural properties of a 10 μm thick In-face InN film, grown on Al₂O₃ (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55×10¹⁰ cm⁻², 4.82×10⁸ cm⁻² and 1.69×10⁹ cm⁻² for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35×10⁹ cm⁻² and 1.20×10⁹ cm⁻², respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2×10⁹ cm⁻², in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.     

Resonant Raman scattering by N-related local modes in AlGaAs/InGaAsN multiquantum wells

We report resonant Raman scattering and secondary ion mass spectrometry measurements on InGaAsN/AlGaAs multiquantum wells grown by plasma-assisted molecular beam epitaxy. The appearance of a strong TO band at resonance with nitrogen (N)-related electronic levels has been observed. The N-induced vibration mode at 470 cm⁻¹ changes in intensity and shape with increasing N and In content. A new vibration mode has been observed at 320 cm⁻¹, whose intensity scales with the N concentration. This mode is not present in InGaAsN films, so it is linked to the presence of Al. Its frequency is close to the B₁ silent mode of wurtzite GaN. It is attributed to the formation of GaN pairs, near the MQW interfaces as a consequence of the preferential Al–N bonding.     

The influence of structural disorder on the phonon modes in zinc oxide

Undoped zinc oxide thin films and nanostructured layers were grown by pulsed laser deposition on different substrates. They were characterized by scanning electron microscopy and Raman backscattering spectroscopy. Larger substrate mismatch leads to higher structural disorder in the thin films. Simultaneously, the intensity of the phonon mode at 580 cm⁻¹ increases. However, for the nanostructured layers it remains constant. These observations are discussed in terms of the disorder activation of forbidden Raman modes.     

Monitoring of spectroscopic changes of a single trapped fission yeast cell by using a Raman tweezers set-up

We demonstrate an improvement of the sensitivity of a Raman tweezers set-up, which combines optical tweezers with Raman spectroscopy. The system was tested by taking the Raman spectrum of a 4.6 μm diameter polystyrene sphere trapped in an aqueous solution. The improvement of sensitivity of the set-up was achieved by adjusting the trap depth for maximum signal to noise ratio (SNR). The maximum SNR was obtained by investigating the Raman peak of a trapped polystyrene sphere at 1001 cm⁻¹ according to trap depth. With this system, a single trapped living Schizosaccharomyces Pombe yeast cell was sensitively monitored by taking the kinetic Raman spectra for more than 2 h. The relative intensity decrease in amide I and amide III bands, frequency increase in amide I band together with alterations in tyrosine marker band around 850 cm⁻¹ was observed, which indicates alterations in the hydration state of protein by time progressing.     

Model and theory for the determination of diffusion coefficients by Auger electron spectroscopy measurements and an application to oxygen diffusion along the [0001] and [101¯0] axes in single crystal zirconium

A simple hopping model of the diffusion of adsorbed species from a surface into the bulk of a material has been formulated and solved mathematically. The difference in the energy barriers for an atom moving between the atomic layers at the surface and in the bulk are explicitly considered. This model is also capable of describing the initial stages of diffusion, something that conventional solutions of the continuum diffusion equation cannot handle. Auger electron spectroscopy has been used to measure the dissolution rate of oxygen from Zr(0001) and Zr(101¯0) surface into the bulk. Satisfactory results were obtained by applying our model to the diffusion data for these two zirconium surfaces for two different heating schedules: (i) rapid temperature ramp-and-hold and (ii) continuous linear heating with respect to time. The resulting Arrhenius expressions for diffusion are: D = (0.115 ± 0.031)exp[(−44.45 ± 4.82)kcal/RT]cm²/s along Zr[0001] and D = (1.07 ± 0.26)exp[(−46.18 ± 4.22)kcal/RT]cm²/s along Zr[101¯0].     

Layer‐dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS₂ layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS₂ in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single‐ and few‐layer MoS₂ samples which are absent in the bulk. The Raman mode at ~230 cm⁻¹ appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at ~179 cm⁻¹ shows asymmetric character for a few‐layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the Γ‐M direction. The most intense spectral region near 455 cm⁻¹ shows a layer‐dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm⁻¹ is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS₂ layers down to a few atoms thick. Copyright © 2012 John Wiley & Sons, Ltd.     

H2S : First Observation of the (70,0) Local Mode Pair and Updated Global Effective Vibrational Hamiltonian

The absorption spectrum of H₂S has been recorded by intracavity laser absorption spectroscopy in the spectral region 16 180–16 440 cm⁻¹ corresponding to an excitation of the (70^±, 0) local mode pair. Seventy-seven sublevels could be rotationally assigned and fitted with a rms of 0.009 cm⁻¹ by considering the (70^±, 0) local mode pair as isolated. The corresponding vibrational terms combined with all the levels reported in the literature were used to refine the effective vibrational Hamiltonian parameters of H₂³²S. The importance of the Fermi-type interaction is discussed.