Characterization of ion implanted n+ layers on tetrahedrically textured silicon surfaces

Ion implantation of 2 × 10^{15 31}P⁺/cm² at 10 keV and furnace annealing at 750° C, 1/2 h, have been used to obtain n⁺ -p junctions on (100) silicon samples having tetrahedrically textured surfaces. This texture was obtained by an anisotropic etching in a hot hydra-zine-water mixture. Morphological properties of the surface (dimension, homogeneity and characteristic of the tetrahedrons) have been analyzed and electrical properties of the implanted layers (sheet resistivity, carrier concentration profile) have been measured. The electrical characteristics of the textured samples are similar to those obtained using samples with flat polished surface; the tetrahe-dral structures are not damaged by the implantation process and they keep their antireflecting properties unaltered.     

Electrical properties of p +/n + In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy

p ⁺/n ⁺ In_0.53Ga_0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×10^{3 –1} cm^–2), high peak current densities (793 A/cm²) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.     

Electrical properties of p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy

p ⁺/n ⁺ InGaAsP tunnel diodes with a bandgap of 0.95 eV were fabricated by liquid phase epitaxy and their electrical properties were characterized. Forward conductances of 500 ^–1 cm^–2, peak current densities of 28.5 A/cm² and peak to valley current ratios of 14.3 were obtained at room temperature. These devices were incorporated successfully as Intercell Ohmic Connections (IOCs) for an InP-based, two-terminal monolithic multijunction tandem solar cell.     

Fabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates

We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8-off 4H-SiC wafers, the quality of the layers and the nature of realized p–n structures are discussed. Mesa diode structures were fabricated. Al was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current–voltage measurements (I–V). I–V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained.     

Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry

This paper presents the influence of Ar⁸⁺ and O⁶⁺ ion implantation on the recombination parameters of n and p type Si samples. These parameters were determined from the fitting of theoretical characteristics to the experimental photothermal radiometric (PTR) characteristics. We found that with the increasing ion implantation doses (i) the changes of the bulk recombination lifetimes and the carrier diffusivity were not observed; (ii) the increasing of the surface recombination velocities and the parameter A were observed. This paper also proves that it is possible to interpret the experimental PTR characteristics with a relatively simple effective model of a PTR signal.     

Luminescence spectroscopy and energy transfer in Eu2+/Mn2+-doped KCaPO4 phosphors

Eu²⁺/Mn²⁺-doped KCaPO₄ phosphors were prepared by conventional solid-state reaction. X-ray powder diffraction (XRD), SEM, photoluminescence excitation, and emission spectra, and the luminescence decay curves were measured. Mn²⁺ singly doped KCaPO₄ shows the weak origin-red luminescence band peaked at about 590 nm. The Eu²⁺/Mn²⁺ co-doped phosphors emit two distinctive luminescence bands: a blue one centered at 480 nm originating from Eu²⁺ ions and a broad red-emitting one peaked at 590 nm from Mn²⁺ ions. The luminescence intensity from Mn²⁺ ions can be greatly enhanced with the co-doping of Eu²⁺ ions. The efficient energy transfer from Eu²⁺ to Mn²⁺ was verified by the photoluminescence spectra together with the luminescence decay curves. The resonance-type energy transfer via a dipole–quadrupole interaction mechanism was supported by the decay lifetimes. The emission colors could be tuned by changing the Mn²⁺-doping concentration.     

The (p,nγ) reaction on Al and Si

The reactions ²⁷Al(p, n γ) ²⁷Si and ²⁸Si(p, n γ)²⁸P have been studied at E_p = 16 and 23 MeV, respectively, with a Ge(Li) detector in coincidence with a neutron detector. In ²⁷Si, two new γ-tran- sitions were detected and accurate excitation energies were determined. In ²⁸P, the γ-decay scheme was studied for the first time and new levels were located at 879 and 1602 keV excitation energy. For both nuclei the γ-ray spectra were supplemented by neutron time-of-flight spectra. The excitation energies are compared with those of the analogue nuclei and with the predictions from Coulomb displacement calculations.     

Optical and electrical properties of nanostructured implanted silicon n+-p junction passivated by atomic layer deposited Al2O3

This paper investigates the optical and electrical properties of nanostructured implanted silicon junctions passivated by Al₂O₃ layers. A two-step ion implantation method has been developed to fabricate the nanostructured n⁺-p junctions with theoretical support of two dimensional Monte Carlo simulations to predict and optimize the junction profile. Dense and uniform arrays of silicon nanopillars and nanocones were formed by combining nanosphere lithography and dry etching, exhibiting a low reflectance in a broad spectrum from 300 to 800 nm. A conformal Al₂O₃ layer was deposited on the array by using thermal atomic layer deposition (ALD) to achieve chemical passivation effect. External quantum efficiency and power conversion efficiency of the junctions were measured versus nanostructuration and Al₂O₃ passivation. The results showed that significant enhancement of efficiency can be achieved on the passivated nanopillar-based junctions.     

n,p柱宽度对超结SiGe功率二极管电学特性的影响

结合SiGe材料的优异性能与超结结构在功率器件方面的优势,提出了一种超结SiGe功率二极管.该器件有两个重要特点:一是由轻掺杂的p型柱和n型柱相互交替形成超结结构,取代传统功率二极管的n^-基区;二是阳极p⁺区采用很薄的应变SiGe材料.该二极管可以克服常规Si p⁺n^-n⁺功率二极管存在的一些缺陷,如阻断电压增大的同时,正向导通压降随之增大,反向恢复时间也变长.利用二维器件模拟软件MEDICI仿真 关键词： 超结 锗硅二极管 n p柱宽度 电学特性     

The reaction γ +d → π+ + π− +p + n between 570 and 850 MeV andΔ ++ Δ − production

The reaction γ+d → π⁺+π^? +p + n has been measured in a kinematically complete way at incident photon energies from 570 to 850 MeV in steps of 40 MeV. From detailed comparison of measured data with results of event simulations, it is concluded that three different mechanisms, the quasi-free, double-delta and phase space productions, contribute to the reaction. Each of the cross sections corresponding to these mechanisms is determined separately.     

Dy3+/Nd3+掺杂对Sr4Al14O25:Eu2+陷阱能级的影响

采用高温固相法合成了Sr₄Al₁₄O₂₅: Eu²⁺,Sr₄Al₁₄O₂₅: Eu²⁺,Dy³⁺和Sr₄Al₁₄O₂₅: Eu²⁺,Nd³⁺材料,研究了Dy³⁺或Nd     

The interaction between vapor-deposited Al atoms and methylester-terminated self-assembled monolayers studied by time-of-flight secondary ion mass spectrometry,X-ray photoelectron spectroscopy and infrared reflectance spectroscopy

The deposition of 2 Å of Al metal onto a monolayer of methylester-terminated alkanethiolate (HS(CH₂)₁₅CO₂CH₃) self-assembled on polycrystalline Au(111) was studied using time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray photoelectron spectroscopy (XPS) and infrared reflectance spectroscopy (IRS). The deposited Al was found to be highly reactive with the oxygen atoms in the self-assembled monolayer terminal functional group. No reactivity between Al and the methylene backbone of the monolayer was observed, nor was any Al observed at the monolayer/Au interface. However, the deposition of Al does induce some chain disordering.     

Complex refractive index and phosphorus concentration profiles in P+31 ion implanted silicon by ellipsometry and auger electron spectroscopy

Ellipsometrically measured complex retractive index profiles in high energy P⁺₃₁ ion implanted silicon have been compared with the phosphorus concentration profiles determined by in-depth profiling of the implanted surface using Auger electron spectroscopy in conjunction with in-situ ion sputtering. Structure was observed in the phosphorus profile which corresponds to structure in the complex refractive index profiles of unannealed specimens. This implies that the complex refractive index profile of the unannealed surface is sensitive to the concentration of the implanted species as well as the amount of structural disorder in the implanted layer. These results also indicate that the implanted phosphorus tends to build up in the more highly damaged regions, possibly through a radiation enhanced self-diffusion mechanism.     

Effect of He+ and H+ ion irradiation on polystyrene films probed by NIR photothermal deflection spectroscopy

+ and H⁺ ions. Photothermal deflection spectroscopy (PDS) technique was used to record the absorption spectrum in the wavelength range 1.20 μm to 2.0 μm. The evolution of the various overtone and combination bands occurring in this range has been related to the changes taking place in the polystyrene structure. Received: 1 September 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999     

Analysis of the interactions between He+ ions and transition metal surfaces using co-axial impact collision ion scattering spectroscopy

The interactions between low energy He⁺ ions and a series of transition metal surfaces have been studied using co-axial impact collision ion scattering spectroscopy (CAICISS). Experimental data were collected from the Ni(110), Cu(100), Pd(111), Pt(111) and Au(111) surfaces using ion beams with primary energies between 1.5 keV and 4.0 keV. The shadow cone radii deduced from the experimental surface peak positions were found to closely match theoretical predictions. Data analysis was performed using both the FAN and Kalypso simulation codes, revealing a consistent requirement for a reduction of 0.252 in the screening length correction in the Molière approximation within the Thomas–Fermi (TFM) interaction potential. The adjustments of the screening length in the TFM potential, predicted by O'Connor, and the uncorrected Ziegler–Biersack–Littmark (ZBL) potential both yielded inaccurate results for all of the surfaces and incident energies studied. We also provide evidence that, despite their different computational methodologies, the FAN and Kalypso simulation codes generate similar results given identical input parameters for the analysis of 180° backscattering spectra.     

AunXm(n+m=4,X=Cu，Al，Y)混合小团簇的结构和稳定性研究

采用基于密度泛函理论的B3LYP方法，优化了Au_nX_m(n+m=4,X=Cu，A l，Y)二元混合团簇的稳定结构.计算了稳定结构的平均结合能、电离势、电子亲和势、最高占据轨道能级和最低空轨道能级及二者间的能隙.结合Mulliken集居数分析研究了二元混合团簇稳定存在的规律，得出掺杂可以增强团簇稳定性的结论. 关键词： 混合团簇 结合能 能隙 分子轨道集居数     

AunXm(n+m=4,X=Cu,Al,Y)混合小团簇的结构和稳定性研究

采用基于密度泛函理论的B3LYP方法,优化了AunXm(n+m=4,X=Cu,Al,Y)二元混合团簇的稳定结构.计算了稳定结构的平均结合能、电离势、电子亲和势、最高占据轨道能级和最低空轨道能级及二者间的能隙.结合Mulliken集居数分析研究了二元混合团簇稳定存在的规律,得出掺杂可以增强团簇稳定性的结论.     

Hyperfine structure and radiative lifetimes in the 3s 2 n p 2 P 3/2 sequence of27Al using time resolved laser spectroscopy

Using time-resolved laser spectroscopy we have determined the hyperfine structure in the 3s ² n p ² P _3/2 sequence of²⁷Al (I=5/2). The magnetic-dipole interaction constants were found to scale withn ^*?2.85 (n ^* is the effective principal quantum number) in the investigated regionn=6–12. Significant quadrupole interaction constants were obtained forn=6–9. The measured radiative lifetimes forn=6–12 scale withn ^*2 .