原子层沉积制备Ta_2O_5薄膜的光学特性研究

以乙醇钽[Ta(OC2H5)5]和水蒸气为前驱体,采用原子层沉积(ALD)方法分别在基板温度为250℃和300℃的K9和石英衬底上制备了Ta2O5光学薄膜。采用分光光度计、X射线光电子能谱(XPS)、X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)等手段对薄膜的光学特性、微结构和表面形貌进行了研究。结果表明,用ALD方法制备的Ta2O5薄膜在刚沉积和350℃退火后均为无定形结构,而250℃温度下沉积的薄膜其表面粗糙度低,聚集密度很高,光学均匀性优,在中紫外到近红外均表现出很好的光学特性,可以作为高折射率材料很好地应用于光学薄膜中。     

Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction （XRD）, high- resolution transmission electron microscopy （HRTEM）, and x-ray photoelectron spectroscopy （XPS）. The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3 nm and 0.Snm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.     

Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition

JETP Letters - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under...     

电泳沉积法制备V2O5薄膜的结构和性能

将V2O5溶胶电泳沉积在ITO导电基片上制备V2O5薄膜.运用X射线衍射和扫描电镜对薄膜的结构进行分析,通过紫外-可见光透射光谱和循环伏安法分别测试其光学和电化学性能.实验结果表明,电泳沉积V2O5薄膜具有致密的显微结构,薄膜厚度均匀、与基片的粘附性很好;循环实验中,薄膜呈现黄色到绿色的可逆变化,最大的透射率变化达到30%左右;薄膜具有很好的注入/退出可逆性和循环稳定性,50次循环效率仍能达到88.02%,并且循环后的薄膜与ITO导电玻璃的粘附性仍然很好,没有溶解现象;应用交流阻抗法计算Li+在V2O5薄膜着色过程的扩散系数为5.10×10-12cm2/s,表明该薄膜可以作为电致变色材料得到应用.     

溅射的Ti薄膜热氧化形成的TiO2薄膜与p+-Si形成的异质结的电致发光

利用磁控溅射法以不同条件在重掺硼硅片(p+-Si)上制备Ti薄膜,经过一定条件下的热氧化转化为TiO2薄膜,从而形成TiO2/p+-Si异质结.研究表明:要使TiO2/p+-Si异质结产生显著的电致发光,其中的TiO2薄膜必须呈现单一的锐钛矿相,这就要求在较低的功率下溅射获得晶粒尺寸较小的Ti薄膜.此外,TiO2的薄膜...     

原子层沉积制备氧化锌纳米薄膜的光学性质研究

采用原子层沉积技术(ALD),以二乙基锌和水为前驱体,在衬底温度分别为110和190 ℃的条件下制备了致密的氧化锌纳米薄膜。采用X射线光电子能谱,荧光光谱和椭偏仪等表征手段对薄膜的成分和光学性质进行了研究。结果表明,随着沉积温度的增加,氧化锌薄膜内—OH含量降低,说明氧化锌薄膜生长过程中的化学反应更加完全;另外,沉积温度增加后,薄膜在365 nm处的激子发射峰出现了明显的增强,同时可见光区的荧光发射峰消失,表明薄膜内的缺陷态减少。随着成膜质量的提高,氧化锌薄膜的电子迁移率从25提高至32 cm2·(V·S)-1。椭偏测量的拟合结果表明,在375～800 nm的波长范围内,氧化锌薄膜的折射率逐渐从2.33降至1.9,呈现出明显的色散现象;另外,不同温度下制备的氧化锌薄膜光学带隙均为3.27 eV左右,这说明沉积温度对薄膜的带隙没有明显影响。     

不同酸催化条件下Ta2O5气凝胶的制备

采用溶胶-凝胶技术,以乙醇钽为前躯体,乙醇为溶剂,分别以盐酸、硝酸、硫酸为催化剂,结合CO2超临界干燥技术制备了Ta2O5气凝胶。研究发现:硫酸作催化剂的体系,其胶凝时间远远小于其他体系,且溶剂交换及超临界干燥过程中的收缩开裂现象明显改善;扫描电镜分析结果显示,硫酸为催化剂制备的Ta2O5气凝胶骨架颗粒间存在较严重的团簇现象,比表面积约167 m2/g,明显低于以盐酸、硝酸为催化剂的体系。X射线光电子能谱测试结果显示,Ta2O5气凝胶中无相应的Cl元素或N元素残留,而S元素则基本上滞留在Ta2O5气凝胶中。说明S元素进入了Ta-O-Ta交联结构,正是因为这种结构的引入,Ta2O5气凝胶的收缩龟裂现象得以明显改善并呈现出相对较高的力学性能。     

Amorphous to crystalline transformation in Ta2O5 studied by Raman spectroscopy

Many of the interesting properties that make Ta₂O₅ a strategic material for current and future applications in chemistry, microelectronics and optics, depend on its structural characteristics. In this work, we use Raman spectroscopy to probe structural modifications in amorphous Ta₂O₅ coatings submitted to thermal annealing. On the basis of previous knowledge on the crystalline material, we perform Raman spectrum simulations in disordered and partially ordered Ta₂O₅ from a phonon density of states. Calculated spectra are in good agreement with complex experimental spectra. Our original approach allows assignment of the vibrational features of the amorphous material, and quantitative interpretation of observed structural modifications in terms of ordering scales. In addition, it provides numerical indicators to analyse amorphous to crystalline phase transformation. Copyright © 2012 John Wiley & Sons, Ltd.     

Ta2O5平面波导湿度传感器的研究

本文从应用的角度介绍平面波导传感器的概念及制备方法，在实验的基础上分析和讨论了Ｔａ２Ｏ５平面波导湿度传感器的原理，结构与特性测试方法，为开展集成光学平面波导传感器研究提供理论与技术依据。     

Thickness-dependence of optical constants for Ta2O5 ultrathin films

An effective method for determining the optical constants of Ta₂O₅ thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient–oxide–interlayer–substrate) was presented. Ta₂O₅ thin films with thickness range of 1–400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta₂O₅ ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta₂O₅. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.     

金属醇盐法制备Ta2O5气凝胶

 以乙醇钽为前驱物,采用金属醇盐溶胶-凝胶技术,获得了Ta₂O₅湿凝胶,分析了不同条件下的溶胶-凝胶过程,并初步探讨了凝胶过程机理。Ta₂O₅的溶胶-凝胶过程主要受到水量、催化剂用量及钽源浓度等因素的影响：体系在强酸性条件下凝胶,且随着酸性的增强,体系凝胶时间明显缩短;当水量较少时,凝胶时间随水量的增加而增加,但当水量增加到一定程度时,体系凝胶时间基本不变;实验证明,通过增大溶剂用量,体系凝胶时间延长,气凝胶理论密度降低。通过对溶胶-凝胶过程的控制,结合超临界干燥技术,获得了密度低至44 mg/cm³的Ta₂O₅气凝胶样品。     

Wide bandpass optical filters with TiO2 and Ta2O5

Complex multilayer thin film filters for optical applications have been designed, prepared and characterized in this work. E-beam reactive evaporation technique has been used as a deposition process. In the first stage, optimized individual film layers of TiO₂, Ta₂O₅, and SiO₂ are deposited and characterized optically and structurally before the deposition of multilayered structures. The filter designs are based upon 33 layered SiO₂/TiO₂ and SiO₂/Ta₂O₅ configurations on glass substrate. These designs are optimized to achieve wideband transmission in the visible spectrum. After deposition, the two filter configurations are characterized optically and structurally using spectrophotometery, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscopy (SEM). SiO₂/Ta₂O₅/glass filter has been found sensitive to deposition conditions since high absorption is observed in multilayered configuration for the as-deposited samples. Post-deposition annealing of the filter in the temperature range 150 to 250°C was also performed in order to study the effect of temperature on absorption and spectral characteristics of the filter. Comparison of the two filter configurations was also performed to analyze their suitability for optical applications. Adhesion of the two filters was found to be very good by means of tape-peel test.      

A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition

Technical Physics - A method is presented for the deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma from an organometallic precursor and an H2/Ar gas...     

2D MoSe2 Structures Prepared by Atomic Layer Deposition

Here, we demonstrate the preparation of 2D MoSe₂ structures by the atomic layer deposition technique. In this work, we use ((CH₃)₃Si)₂Se as the Se precursor and Mo(CO)₆ or MoCl₅ as the Mo precursors. The X‐ray photoelectron spectroscopy (XPS) analyses of the prepared samples have revealed that using the MoCl₅ precursor the obtained structure of MoSe₂ is nearly identical to the reference powder MoSe₂ sample while the composition of the sample prepared from Mo(CO)₆ contains a significant amount of oxygen atoms. Further inspection of as‐deposited samples via scanning electron microscopy (SEM), X‐ray diffraction (XRD), and Raman spectroscopy has disclosed that the MoSe₂ structure based on MoCl₅ is formed from randomly oriented well crystalline flakes with their size ≈100 nm in contrast to the Mo–Se–O compact film originating from Mo(CO)₆.     

块状Ta2O5-TiO2复合气凝胶的制备与表征

 以乙醇钽、钛酸丁酯为原料,以乙醇为溶剂,通过溶胶-凝胶法及超临界干燥成功制备了Ta₂O₅-TiO₂复合气凝胶。用场发射扫描电镜（SEM）、透射电镜（TEM）、扫描电镜模式下的电子能谱仪（EDS）以及比表面积吸附仪（BET）对其进行表征。结果表明:该气凝胶是由粒径在nm量级的Ti和Ta的羟基氧化物胶体颗粒堆积而成的低密度、高比表积的多孔网络结构材料,孔径分布主要集中在5~15 nm,比表面积为492.9 m²/g,密度为90 mg/cm³左右。     

On a current mechanism in Ta2O5 thin films

Electrical conduction in the temperature range of 120–370 K has been studied in sandwiched structures of Al/Ta₂O₅/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600°C. The temperature-dependent current-voltage (I–V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I–V data measured on Ta₂O₅ films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.      

Review on Atomic Layer Deposition and Applications of Oxide Thin Films

Atomic layer deposition technique is able to grow conformal thin films over high aspect ratio structures. This article reviews the various aspects of oxides grown by this method including applications in photovoltaics and memristors. The main focus of this review is to concentrate on the oxides grown by atomic layer deposition and their growth mechanisms. The oxides deposited using atomic layer deposition are also likely to find application in memristor, an emerging field in the non volatile memories design with the ability to retain data and memory states even in power-off condition. The use of this technique to obtain oxides in surface modification of nanostructures gives the significance of these materials.     

氮自掺杂Ta_2O_5微球制备及其光催化性能研究

我们采用水热法合成了具有可见光吸收的非金属自掺杂N-Ta_2O_5多孔微球光催化剂.并通过X射线粉末衍射仪(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、紫外可见分光光度计(UV-vis)等多种表征手段对自掺杂N-Ta_2O_5的晶体结构、形貌、组分等进行了测试分析.XRD结果表明,Ta N可以在HF溶液中完全氧化为Ta_2O_5,N掺杂可以通过N与O原子的轨道杂化使Ta_2O_5的带隙从4.0 eV降低为2.2 eV,从而增强其可见光吸收.高催化活性的N-Ta_2O_5可通过调控其结晶度来实现.     

Fabrication Process of Sol-Gel Spin Coating for SrBi2Ta2O9 Films Applied to FeRAM

We investigate SrBi2 Ta2 O9 （SBT） films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first layer of SBT, as promising ferroelectric layer materials applied to ferroelectric random access memory （FeRAM）. All the specimens in this experiment have similar SBT crystal orientations of （115）, （020）, （220）, and （135）. The Pt/SBT/Pt capacitor with coating of 3000rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.571μC/cm^2 and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.