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1.
吕常伟  王臣菊  顾建兵 《物理学报》2019,68(7):77102-077102
本文采用基于密度泛函理论的第一性原理平面波赝势和局域密度近似方法,优化了立方和六方氮化硼的几何结构,系统地研究了零温高压下立方和六方氮化硼的几何结构、力学、电学以及光学性质.结构与力学性质研究表明:立方氮化硼的结构更加稳定,两种结构的氮化硼均表现出一定的脆性,而六方氮化硼的热稳定性则相对较差;电学性质研究表明:立方氮化硼和六方氮化硼均为间接带隙半导体,且立方氮化硼比六方氮化硼局域性更强;光学性质结果显示:立方氮化硼和六方氮化硼对入射光的通过性都很好,在高能区立方氮化硼对入射光的表现更加敏感.此外,还研究了高温高压下立方氮化硼的热力学性质,并得到其热膨胀系数、热容、德拜温度和格林艾森系数随温度和压力的变化关系.本文的理论研究阐述了高压下立方氮化硼和六方氮化硼的相关性质,为今后的实验研究提供了比较可靠的理论依据.  相似文献   

2.
采用基于密度泛函理论的广义梯度近似方法研究了稳态六方petrov原子序列结构Ge2Sb2Te5的结构、电子和光学性质。计算所得的平衡态晶格参数与实验数据和先前的理论结果吻合很好。基态的能带结构和态密度表明了稳态六方petrov原子序列结构的Ge2Sb2Te5持有金属性。从压强影响下体积的变化趋势发现稳态六方Ge2Sb2Te5在17 GPa和34 GPa 出现不稳定,暗示在此压强下的相变发生,这与2009年Krbal等人的实验结果相吻合。同时,还系统地研究了稳态六方petrov原子序列结构的Ge2Sb2Te5高压下的光学性质,得到了高压下介电函数、吸收率、光反射率、折射率、消光系数和电子能量损失谱在20 eV内的变化情况。  相似文献   

3.
The physical and mechanical properties of a C60 fullerene sample have been investigated under high pressure–high temperature conditions using a designer Diamond Anvil Cell. Electrical resistance measurements show evidence of C60 cage collapse at 20 GPa, which leads to the formation of an insulating phase at higher pressure. Energy dispersive X-ray diffraction (EDXD) data indicated that the characteristic fcc reflections gradually decrease in intensity and eventually disappear above 28 GPa. A C60 sample was laser-heated at a pressure of 35 GPa to a temperature of 1910±100 K and, subsequently, decompressed to ambient conditions. The photoluminescence spectra and the Raman spectrum of the pressure–temperature-treated sample were measured at a low temperature of 80 K. Raman peak at 1322.3 cm?1 with full-width half-maximum of 2.9 cm?1 was observed from the sample, which is attributed to the hexagonal diamond phase in the sample. The room temperature photoluminescence spectra showed a symmetric emission band centered in the red spectral range with a peak at 690 nm. The structural analysis of the pressure–temperature-processed C60 sample using EDXD method showed strong internal structure orientation and a phase close to hexagonal diamond. Mechanical properties such as hardness and Young’s modulus were measured by nanoindentation technique and the values were found to be 90±7 and 1215±50 GPa, respectively and these values are characteristic of sp3-bonded carbon materials.  相似文献   

4.
Hexagonal bronzes and valence‐balanced hexatungstates (VBHT) have attracted great attention for presenting rich polymorphism and displaying superconductor or ferroelectric properties. In the present work, structural and vibrational properties of RbBi1/3W8/3O9 (RBW) crystal (VBHT type) were investigated by high‐pressure Raman scattering experiments. The results suggest the existence of a reversible pressure‐induced structural phase transition at about 4 GPa. This transformation is most likely related to rotations of octahedral units along the c‐axis with no abrupt changes of apical O W O bonds length. In order to get further understanding of RBW vibrational properties, we performed phonon calculations, by using classical lattice dynamics, in the related hexagonal structure of the K0.26WO6 system. These calculations revealed that most of vibrational properties of K0.26WO6 are governed by tubular ‘like’ vibrations of the hexagonal cavity, which resemble similar vibrations of tubular nanostructures. The pressure dependence of Raman modes is understood in terms of calculated phonon eigenvectors at ambient pressure. Copyright © 2009 John Wiley & Sons, Ltd.  相似文献   

5.
In this work by applying first principles calculations structural, electronic and optical properties of Ca3Bi2 compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca3Bi2 in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca3Bi2 with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.  相似文献   

6.
The effect of a high pressure (up to 6 GPa) on the crystal and magnetic structure of the hexagonal manganite LuMnO3 is studied by neutron diffraction in the temperature range 10–295 K. It is found that, as the pressure increases, the ordered magnetic moment of Mn ions at T = 10 K decreases noticeably from 2.48 (0 GPa) to 1.98 μB (6 GPa). This decrease is due to an enhancement of the geometrical frustration effects on the triangular lattice. At the same time, the symmetry of the triangular antiferromagnetic state (the irreducible representation Γ2) remains unchanged. A correlation is revealed between the distortion parameter of the triangular lattice formed by Mn ions and the symmetry of the antiferromagnetic state of hexagonal manganites RMnO3. Based on this correlation, a generalized magnetic phase diagram of these compounds is constructed. The obtained phase diagram provides an explanation for the changes observed in the magnetic state of hexagonal manganites caused by high pressure and chemical substitution.  相似文献   

7.
Structures of h-BN/graphene with holes where atoms at the edges are bonded to each other by sp2 hybridized C–B and C–N bonds and form continuous junctions from layer to layer with topological defects inside holes have been considered. Their formation, as well as the moiré-type stable atomic structure of such compounds (with different rotation angles of graphene with respect to the hexagonal boron nitride monolayer) with closed hexagonal holes in the AA centers of packing of the moiré superlattice, has been studied. The stability, as well as the electronic and mechanical properties, of such bilayer BN/graphene nanomeshes has been analyzed within electron density functional theory. It has been shown that they have semiconducting properties. Their electronic band structures and mechanical characteristics differ from the respective properties of separate monolayer nanomeshes with the same geometry and arrangement of holes.  相似文献   

8.
祐卫国  张勇  李璟  杨峰  CHENG C H  赵勇 《发光学报》2010,31(4):503-508
用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜,通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示,所制备的ZnO薄膜为六角纤锌矿结构,具有沿c轴的择优取向;溅射压强P=0.6Pa,氩氧比Ar/O2=20/5.5sccm时,(002)晶面衍射峰强度和平均晶粒尺寸较大,(O02)XRD峰半峰全宽(FWHM)最小,光致发光紫外峰强度最强。  相似文献   

9.
Hexagonal (space group P63cm) form of YInO3 has been investigated under high pressure using synchrotron-based angle-dispersive X-ray diffraction and Raman scattering methods. Our experimental investigations suggest that it undergoes the phase transition to a new phase in the pressure range 12–15?GPa, while the ambient hexagonal phase is found to coexist with the new phase up to 29?GPa. DFT based calculations within the LDA approach on the hexagonal phase of YInO3 showed that the unit cell volume matches well with the experimentally obtained volume at ambient pressure. As the pressure increases, theoretically obtained values of unit cell volume of the hexagonal phase were found to be significantly lower than that of experimentally obtained values. This discrepancy has been corrected using LDA?+?UIn(4d) (Hubbard interaction parameter between Indium 4d electrons) method. We have proposed the high pressure phase of YInO3 to be orthorhombic with space group Pnma.  相似文献   

10.
Jingyi Liu 《中国物理 B》2022,31(3):37801-037801
High-pressure Raman scattering from hexagonal close-packed (HCP) metals Os and Re have been extended up to 200 GPa, and the pressure-dependent shear modulus C44 has been deduced from the Raman-active mode E2g, which is generated from the adjacent vibration of atoms in hexagonal planes, providing the valuable information about the elastic properties for HCP metals under high pressure. Combined with the available data of HCP metals from previous works, a further study indicates that the $C_{44}^\prime/C_{44}$ ratio would be close to a constant value, 0.01, with increasing atomic number of metals. The results obtained from high-pressure Raman scattering will allow us to probe the elastic anisotropy of the HCP metals at very high pressure.  相似文献   

11.
Cuprous oxide is selected as a promising material for photovoltaic applications. Density functional theory is used to study the structural, electronic, and thermodynamic properties of cuprous oxide by using the local density approximation and generalized-gradient approximation. The effect of pressure on the structural and electronic properties of Cu2O is investigated. This study confirms and characterizes the existence of new phases. Hexagonal and tetragonal phases are not completely indentified. We focus on the phase transition of the cuprous oxide under hydrostatic pressure to tetragonal and hexagonal (CdI2) structures. Variation of enthalpy with pressure is used to calculate the pressure of the phase transition.  相似文献   

12.
Electron–phonon coupling (EPC) is an important issue in semiconductor physics because of its significant influence on the optical and electrical properties of semiconductors. In this work, the EPC in wide bandgap semiconductors including hexagonal BN and AlN was studied by deep UV resonance Raman spectroscopy. Up to fourth‐order LO phonons are observed in the resonance Raman spectrum of hexagonal AlN. By contrast, only the prominent emission band near the band‐edge and the Raman band attributed to E2g mode are detected for hexagonal BN with deep UV resonance excitation. The different behavior in resonant Raman scattering between the III‐nitrides reflects their large difference in EPC. The mechanism for EPC in hexagonal BN is the short‐range deformation interaction, while that in hexagonal AlN is mainly associated with the weak long‐range Fröhlich interaction. Copyright © 2016 John Wiley & Sons, Ltd.  相似文献   

13.
宽禁带直接带隙半导体材料氧化锌(ZnO),具有优异的光电性能、机械性能和化学特性。ZnO材料的结构对其性能影响较大,元素掺杂可改变ZnO晶体结构和带隙宽度,是提升ZnO材料性能的有效手段,当前常用Ag掺杂ZnO即为提高光催化反应效率。高压独立于温度、成分,是调控材料结构组织性能的重要手段,是产生新材料、发现新调控原理的重要因素。该研究通过对比纯ZnO晶体和Ag掺杂ZnO晶体的高压相变行为,揭示了元素掺杂对ZnO纳米晶体材料结构性能的影响。研究首先采用水热法辅助制备纯ZnO纳米微球和Ag掺杂ZnO纳米微球(1∶150Ag/ZnO),表征结果显示水热法合成的纯ZnO和1∶150Ag/ZnO均为六角纤锌矿晶体结构,形貌均为几十纳米尺寸小颗粒堆积形成的微球,ZnO晶格常数随着Ag离子掺杂而变大,Ag掺杂导致ZnO晶格膨胀。随后应用金刚石压腔结合原位拉曼光谱技术测定了纯ZnO和Ag掺杂ZnO的高压结构相变行为。相比于纯ZnO拉曼峰,Ag掺杂ZnO的E2(high)振动模式439 cm-1拉曼峰峰宽变窄,并呈现向低频方向移动的趋势,与无定形ZnO谱峰相近,表明Ag+取代Zn2+影响了Zn-O键,同时也影响了ZnO晶格结构的长程有序性。随体系压力增大,表征六角纤锌矿结构ZnO的拉曼特征峰439 cm-1出现瞬间弱化和宽化。压力增大至9.0 GPa时,纤锌矿结构ZnO拉曼特征峰439 cm-1消失,585 cm-1处出现新峰,ZnO晶体发生由六角纤锌矿向岩盐矿的结构转变。压力继续增大至11.5 GPa,新的拉曼峰显著增强,峰形变窄,同时向高波数方向移动,相变完成,岩盐矿结构ZnO性能稳定。1∶150 Ag/ZnO从六角纤锌矿结构到立方岩盐结构的相变压力为7.2 GPa,低于纯ZnO。相变压力降低表明晶体结构稳定性下降,可能的原因在于掺杂Ag导致ZnO晶格膨胀,晶体结构松弛,两相相对体积变化增加,从而导致相变势垒降低,使样品在较低压力下发生相变。纳米材料的高压研究揭示了元素掺杂对材料结构稳定性的影响,是纳米材料调控原理的潜在研究手段。  相似文献   

14.
The synthesis and characterization of some polycatenar ligands which exhibit hexagonal columnar and cubic phases are reported. A pentacatenar with only four phenyl rings in the core and exhibiting a mesophase is also reported. A few copper (II) and palladium (II) complexes have been synthesized using these ligands and the mesomorphic properties exhibited by them are described. The hexagonal columnar phase exhibited by some of the complexes can be cooled down to room temperature. The mesophases have been characterized using a combination of polarized light microscopy, differential scanning calorimetry and X-ray diffraction methods.  相似文献   

15.
The optical properties of hexagonal InN have been studied using the all-electron approach based on density functional theory (DFT). The full-potential augmented plane wave method is employed with two different exchange-correlation potentials, the Perdew–Wang (PW) and the Engel–Vosko (EV) approximations. In addition, both non-relativistic and relativistic approximations are considered. We found that the PW and relativistic approximations give a metallic ground state; whereas using the EV and non-relativistic approximations a semiconductor phase is obtained, opening the gap up to 0.83 eV. Besides, the calculated interband transitions of the complex dielectric function up to 13 eV show favourable agreement with the recent spectroscopic ellipsometry results.  相似文献   

16.
The results of nonempirical calculation of energies of three polytypes (cubic, two-layer hexagonal, and six-layer hexagonal) are given for RbMnX3 (X = F, Cl, Br) crystals. The calculation is performed using an ionic crystal model with regard for the deformability and the dipole and quadrupole polarizabilities of ions. The behavior of these crystals under the action of hydrostatic pressure is studied. It is demonstrated that, at normal pressure, the RbMnCl3 and RbMnBr3 crystals have a six-layer hexagonal structure. At pressures above 11 kbar, RbMnCl3 passes to a phase with a cubic structure; RbMnBr3 at pressures above 90 kbar passes to a phase with a two-layer hexagonal structure. The RbMnF3 crystal under normal conditions has a cubic structure and experiences no phase transformations under the effect of pressure. The obtained results are in satisfactory agreement with the known experimental data.  相似文献   

17.
利用密度泛函理论(DFT)研究了AlN的六角纤锌矿结构(B4),岩盐矿结构(B1),过渡态中间相六方结构(Hexa)和过渡态中间相四方结构(Tetra),计算了AlN在不同压力下B4和B1结构和过渡态中间相六方结构和四方结构的焓值,计算发现B4和B1相的转变压力是17.27 GPa,低压区中间相六方结构稳定,高压区中间相四方结构更稳定,AlN的常见的B4结构是直接带隙结构,带隙宽度是4.095 eV,带隙宽度与外压力之间关系符合二次函数方程,与其它理论研究结果一致.  相似文献   

18.
The thermo emf in Czochralski-grown silicon single crystals (Cz-Si) was experimentally studied in a range of pressures up to 20 GPa. The pressure dependences revealed phase transitions in the metallic phase of silicon, which passed from tetragonal to orthorhombic and then to hexagonal lattice. The high-pressure silicon phases, as well as the metallic high-pressure phases in ANB8?N semiconductors, possess conductivity of the hole type. As the pressure decreases, the emf behavior reveals transitions to the metastable phases Si-XII and Si-III. Preliminary thermobaric treatment of the samples at a pressure of up to 1.5 GPa and a temperature of T=50–650°C influences the thermoelectric properties of Cz-Si at high pressures.  相似文献   

19.
Summary We present the results of the fixed-spin-moment, self-consistent LMTO electronic structure calculations for hexagonal phase of iron. The relative stability of the nonmagnetic and ferromagnetic phases is discussed along with the magnetic and mechanical equations of state. It is shown that hexagonal Fe is metamagnetic with the nonmagnetic ground state, but at a sufficiently large atomic volume the system prefers a ferromagnetic solution at rather low internal magnetic pressure. These findings seem to be well correlated with the properties of the hexagonal Fe that has recently been grown epitaxially on the Ru substrate.  相似文献   

20.
A simple effective procedure (MNP) for finding equilibrium tetragonal and hexagonal states under pressure is described and applied. The MNP procedure finds a path to minima of the Gibbs free energy G at T=0 K (G=E+pV, E=energy per atom, p=pressure, V=volume per atom) for tetragonal and hexagonal structures by using the approximate expansion of G in linear and quadratic strains at an arbitrary initial structure to find a change in the strains which moves toward a minimum of G. Iteration automatically proceeds to a minimum within preset convergence criteria on the calculation of the minimum. Comparison is made with experimental results for the ground states of seven metallic elements in hexagonal close-packed (hcp), face- and body-centered cubic structures, and with a previous procedure for finding minima based on tracing G along the epitaxial Bain path (EBP) to a minimum; the MNP is more easily generalized than the EBP procedure to lower symmetry and more atoms in the unit cell. Comparison is also made with a molecular-dynamics program for crystal equilibrium structures under pressure and with CRYSTAL, a program for crystal equilibrium structures at zero pressure. Application of MNP to the elements Y and Cd, which have hcp ground states at zero pressure, finds minima of E at face-centered cubic (fcc) structure for both Y and Cd. Evaluation of all the elastic constants shows that fcc Y is stable, hence a metastable phase, but fcc Cd is unstable.  相似文献   

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