Photoluminescence properties of Eu3+-doped Cd1−x Zn x S quantum dots

Eu³⁺-doped Cd_1−x Zn _x S (0 ≤ x ≤ 0.5) quantum dots (QDs) have been synthesized using wet chemical precipitation method. X-ray diffraction and transmission electron microscope have been used for the crystallographic and morphological characterization of synthesized nanomaterials. In order to understand the spectral characteristics of doped QDs, N₂-laser induced time resolved spectra have been recorded. Excited state lifetime values for dichromatic emission (red and violet) attributed to ⁵D₀ → ⁷F_J (J = 1, 2) transitions of Eu³⁺ and host lattice transitions have been calculated from the recorded luminescence decay curves. Decay time dependence on the dopant concentration (0.01–10 at. wt% of Cd²⁺) has been studied in detail.     

Studies on the synthesis and characterization of Zn1− x Cd x S and Zn1− x Cd x S:Mn2+ semiconductor quantum dots

Quantum dots (3–4?nm) of Zn_{1? x} Cd _x S (both free of Mn²⁺ and with Mn²⁺ incorporated) were synthesized through a novel solvothermal-microwave irradiation technique. Detailed structural analysis of the Zn_{1? x} Cd _x S and Zn_{1? x} Cd _x S:Mn²⁺ (x?=?0, 0.25, 0.5, 0.75 and 1) materials was carried out using powder X-ray diffraction technique. For all the compositions, the crystallite size was controlled to less than 1.5?nm. The optical energy gap for Zn_{1? x} Cd _x S was found to vary from 3.878 to 2.519?eV and for Zn_1?x Cd _x S:Mn²⁺ it varies from 3.830 to 2.442?eV when x is increased from 0 to 1. Overall, the optical energy gap could be tuned from a minimum of 2.442?eV to a maximum of 3.878?eV. DC conductivity analysis (from 40°C to 150°C) and electrical energy gap analysis for all the compositions were also performed. The dc conductivity for Zn_{1? x} Cd _x S solid solutions varies from 0.3840?×?10^?10 to 8.7782?×?10^?10?mho/m at 150°C and for Zn_{1? x} Cd _x S:Mn²⁺ it varies from 0.5751?×?10^?10 to 9.8078?×?10^?10 mho /m at 150°C (for x?=?0 to x?=?1). The method of synthesis and the results observed in this investigation may assist in the fabrication of optical devices when the required operational performance falls under the range observed in the study.     

A transmission electron microscopy study of composition in Si1− x Ge x /Si (001) quantum dots

A finite-element programme has been developed to model strain relaxation in the case of epitaxial Si_{1? x} Ge _x /Si coherent quantum dots either with or without compositional inhomogeneities. The resulting elastic displacement fields are used to calculate the intensity of dynamical plan view TEM images of such quantum dots. Various types of linear or parabolic compositional inhomogeneities are studied. TEM images of quantum dots with such inhomogeneities are calculated as well as those of quantum dots with a homogeneous composition. They are then compared with experimental images. It is shown how the analysis of the main features of these experimental images (black/white lobes and moiré-like fringes) enables us to determine the conditions in which it is possible to distinguish quantum dots with a homogeneous composition from those with compositional inhomogeneity.     

Temperature dependence of the photoluminescence of MnS/ZnS core–shell quantum dots

The temperature dependence of the photoluminescence（PL） from Mn S/Zn S core–shell quantum dots is investigated in a temperature range of 8 K–300 K. The orange emission from the ^4T1→^6A1transition of Mn^2＋ions and the blue emission related to the trapped surface state are observed in the Mn S/Zn S core–shell quantum dots. As the temperature increases, the orange emission is shifted toward a shorter wavelength while the blue emission is shifted towards the longer wavelength. Both the orange and blue emissions reduce their intensities with the increase of temperature but the blue emission is quenched faster. The temperature-dependent luminescence intensities of the two emissions are well explained by the thermal quenching theory.     

Quantum confinement effect in the vibrational spectrum of CdSxSe1−x quantum dots in a fluorophosphate glass matrix

The vibrational spectra of mixed cadmium sulfoselenide nanocrystals in a fluorophosphate glass matrix are investigated by Raman spectroscopy. The asymmetry of the lines of the fundamental modes of nanocrystals is experimentally observed in the region of lattice vibrations, which is interpreted as a quantum confinement effect. In the framework of the model of confined phonons, the contribution of the band states to the Raman scattering spectrum is calculated and the size of nanocrystalline regions is estimated. The results obtained are in good agreement with the data on the low-frequency Raman scattering in these objects.     

Raman scattering and hot luminescence spectra of Zn1 − x Mn x Te quantum wires

The Raman scattering and luminescence spectra of Zn_{1 − x} Mn _x Te (0 ≤ x ≤ 0.6) quantum wires have been investigated. The quantum wires have been grown by molecular-beam epitaxy on the (100)GaAs substrate with Au used as a catalyst. The spectrum of optical phonons in ZnMnTe quantum wires varies with a variation in x in accordance with an intermediate (between one- and two-mode) type of transformation. The optical phonon spectrum has been analyzed in terms of the microscopic theory. It has been demonstrated that the experimental data can be brought in accord with the theory by properly modifying the calculated density of phonon states for ZnTe. The spatial confinement has been found to affect the electronic states in Zn_{1 − x} Mn _x Te quantum wires.     

Manifestation of the composition inhomogeneity of Zn1 − x Mg x Te quantum wires in Raman spectra

The resonant Raman spectra of Zn_{1 − x} Mg _x Te quantum wires have been investigated. The dependences of the frequencies of longitudinal optical phonons of the ZnTe-like and MgTe-like modes (LO1 and LO2) on the photon energy have been found. The character of these dependences correlates with the variation in the frequencies of optical phonons of the Zn_{1 − x} Mg _x Te alloys on the composition (x). This gives grounds to assume that the quantum wires are inhomogeneous in the composition. This assumption is also confirmed by the fact that the intensity ratio of the LO2 and LO1 modes in the Raman spectra increases with increasing excitation energy.     

Low temperature photoluminescence properties of p- and n-type Al x Ga1−x As withx>0.42

The photoluminescence (PL) spectra of n- and p-type Al _x Ga_1−x As (x>0.42) grown by metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy show typically a broad PL band (BB) centered about 300meV below the near band-gap PL lines. In the MOVPE grown samples the BB is composed out of four lines. The BB intensity increases with the doping level and dominates the spectrum at concentrations > 10¹⁷ cm⁻³. The temperature dependence of the BB intensity shows two distinct maxima at ≈ 19K and ≈ 80K. Hydrogenation of MOVPE grown samples at 170°C reveal an effective passivation of the shallow acceptors and the centers associated with the BB line. On the contrary hydrogenation at temperatures >250°C leads to an increase in the BB intensity which is related with the evaporation of As from the surface and the generation of V_As in the layers at these temperatures. Our results suggest that the BB is related with isoelectronic centers formed when V_As and C_As or Si_As associate to form next nearest neighbor ion pairs. The PL is then due to a recombination of excitons in analogy to the case of (Zn, O) isoelectronic complexes in GaP. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was supported by the DFG under the contract AZ 436 TSE 113/22/0 in the framework of the cooperation between the DFG and the Academy of Sciences of the Czech Republic.     

Kinetics of indirect photoluminescence in GaAs/AlxGa1−x As double quantum wells in a random potential with a large amplitude

The kinetics of indirect photoluminescence of GaAs/Al_xGa_1−x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton) in magnetic fields B≤12 T at low temperatures T≥1.3 K is investigated. It is found that the indirect-recombination time increases with the magnetic field and decreases with increasing temperature. It is shown that the kinetics of indirect photoluminescence corresponds to single-exciton recombination in the presence of a random potential in the plane of the double quantum wells. The variation of the nonradiative recombination time is discussed in terms of the variation of the transport of indirect excitons to nonradiative recombination centers, and the variation of the radiative recombination time is discussed in terms of the variation of the population of optically active excitonic states and the localization radius of indirect excitons. The photoluminescence kinetics of indirect excitons, which is observed in the studied GaAs/Al_xGa_1−x As double quantum wells for which the random potential has a large amplitude, is qualitatively different from the photoluminescence kinetics of indirect excitons in AlAs/GaAs wells and GaAs/Al_xGa_1−x As double quantum wells with a random potential having a small amplitude. The temporal evolution of the photoluminescence spectra in the direct and indirect regimes is studied. It is shown that the evolution of the photoluminescence spectra corresponds to excitonic recombination in a random potential. Zh. éksp. Teor. Fiz. 115, 1890–1905 (May 1999)     

The effect of bio-conjugation on aging of the photoluminescence in CdSeTe–ZnS core–shell quantum dots

The aging of the photoluminescence (PL) in bio-conjugated and non-conjugated CdSeTe–ZnS core–shell quantum dots (QDs) is studied by the micro-PL, micro-Raman and X-ray diffraction (XRD) in the samples of buffered QD solution dried on a crystalline Si wafer and stored in the atmospheric ambience for about 2 years. The aging of the PL consists in a “blue” spectral shift of the PL band, an increase in PL band half-width and the decrease in the PL intensity. These changes are more pronounced in the conjugated QD samples. The XRD analysis of the aged samples revealed that the QD core diameter is reduced by ∼1.5 nm in the conjugated QDs as compared to the non-conjugated ones. The possible mechanism of PL spectrum aging is the oxidation that decreases the QD core dimension. It is concluded that the bio-conjugation promotes QD oxidation and the mechanism of the effect is proposed.     

Pressure coefficients of the photoluminescence of the II–VI semiconducting quantum dots grown by molecular beam epitaxy

Luminescence properties of CdTe and CdSe quantum dots have been studied under high hydrostatic pressure. The luminescence pressure coefficients of the II–VI quantum dots appear to be very similar to the pressure coefficients of the band-gap of bulk CdTe and CdSe, respectively. In contrary to that, the luminescence pressure coefficients of the III–V quantum dots are significantly lower than pressure coefficients of energy gaps of the appropriate dot materials. The discrepancy can be explained by the theoretical model, which takes into account effects of strain on pressure coefficients in thin strained layers. The experimentally observed pressure-induced quenching of the QDs luminescence is attributed to the “zinc-blende–cinnabar” phase transition in CdTe QDs and to the “zinc-blende–rock-salt” phase transition in CdSe QDs.     

Alloy-disorder scattering of the interacting electron gas in quantum wells and heterostructures of Al x Ga1 − x As

The question whether alloy disorder is screened or unscreened is of fundamental importance. Therefore, we calculate the mobility of the interacting two-dimensional electron gas as realized in Al _x Ga_{1 ? x} As quantum wells and heterostructures in the presence of alloy-disorder scattering. For the screening we use the randomphase approximation and we include many-body effects due to exchange and correlation. We propose to determine the alloy disorder potential V _AD from mobility measurements. If we use V _AD = 1.04 eV we can explain recent experimental results obtained for quantum wells and heterostructures with ultrahigh mobility. From the anomalous linear temperature dependence of the mobility measured in heterostructures, we conclude that the alloy disorder is screened. More experiments are needed to confirm the screening of the alloy disorder and we propose some measurements.     

Orthorhombic symmetry of valence-band states in CdTe/Cd1−x MnxTe quantum wells

A study is reported of the anisotropy in magnetic-field-induced linear polarization in (001) CdTe/Cd_1−x Mn_xTe quantum wells. The observed limiting anisotropy is shown to be due to the low C _2v symmetry of the quantum well. The relations obtained for the C _2v point group are in a good agreement with experiment. Considered on the microscopic scale, the effect is associated with the heavy-hole g-factor anisotropy in the well plane. Fiz. Tverd. Tela (St. Petersburg) 41, 903–906 (May 1999)     

Crystal structure and photoluminescence of (Ba1−x−ySryEux)9Sc2Si6O24

Divalent europium-doped alkaline earth metal silicate phosphors, (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ (x=0.005–0.1, y=0–0.95), have been successfully prepared by solid-state reaction at 1350 °C. The analysis of X-ray diffraction shows that the compounds are in a single phase at the proper concentration of Sr²⁺. At room temperature, the Eu²⁺-activated Ba₉Sc₂Si₆O₂₄ phosphor exhibits a single emission band peaking at about 506 nm. With the increasing content of Sr²⁺, the luminescent intensity of (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ weakens, and the emission peak shifts towards red. Luminescence concentration quenching occurs when Eu²⁺ content x is more than 1 mol% in (Ba_1?x?ySr_yEu_x)₉Sc₂Si₆O₂₄ (y=0/0.2). At low temperatures (Ba_0.9?ySr_yEu_0.1)₉Sc₂Si₆O₂₄ (y=0/0.2) phosphors have two emission bands corresponding to different Eu²⁺ crystallographic sites. The high energy peak (P₁) is quenched at room temperature, while the low energy peak (P₂) weakens much more slowly owing to the energy transfer from P₁ to P₂.     

Temperature dependent photoconductivity and photoluminescence of Cd1 − xMnxTe

Photoconductivity (PC) and Photoluminescence (PL) studies of Cd_{1 − x}Mn_xTe are reported in the ranges of composition 0.15 ⪅ x ⪅ 0.40 and temperature 10 ⪅ T ⪅ 300 K. The results of this study show that p-d transitions make an important contribution to the optical properties of Cd_{1 − x}Mn_xTe in the above range of compositions. Based on UPS and an estimate of the spin-flip energy for the Mn d electrons in Cd_{1 − x}Mn_xTe from literature data we place the centers of the Mn d↑ and Mn d↓ bands contributing to the photoemission and p-d transition processes at -3.5 eV and +2.0 eV, respectively, relative to the Γ₈ valence band edge. Strong changes in both the PL and PC spectra are observed when the Γ₆ conduction band edge shifts through the Mn 3d↓ levels. This explains the specific temperature dependence of the PC for x = 0.32 and the strong increase in the normalized intensity of the PL band at 2.0 eV at x ⪆ 0.35. The shift in the binding energy of the excitonic contribution to the PC with temperature agrees well with the model of Golnik on interactions of the excitons with the Mn²⁺ spins.     

Influence of strain on built-in dipole moment in asymmetric In x Ga1−x As quantum dot molecules

Strain effects on a built-in electron-hole dipole moment are investigated in asymmetric In _x Ga_1?x As coupled quantum dots. We compute electron-hole separation as a function of alloy compositions for both electron and hole resonance cases. It is noted that the inclusion of strain enhances the built-in dipole moments and that the inverted electron-hole alignment is found for electron and hole resonances. Furthermore, the reversal of dipole moments gives rise to different asymmetric Stark shifts in each transition spectrum.     

Photoluminescence of Al x Ga1−x As/GaAs quantum well heterostructures grown by molecular beam epitaxy

Nominally undoped Al_xGa_1–xAs grown by molecular beam epitaxy from As₄ species at elevated substrate temperatures of 670°C exhibits well-resolved excitonic fine structure in the low-temperature photoluminescence spectra, if the effective As-to-(Al+Ga) flux ratio on the growth surface is kept within a rather narrow range of clearly As-stabilized conditions. In contrast to previous results on Al_xGa_1–xAs of composition 0.15not to shift in energy by changing the excitation intensity. This implies a simple freeelectron carbon-acceptor recombination mechanism for the line without any participation of a donor. In Al_xGa_1–xAs of composition close to the direct-to-indirect cross-over point, two distinct LO-phonons separated by 34 and 48 meV from the (D ⁰,C ⁰) peak position at x=0.43 were observed which were before only detectable by Raman scattering experiments. The intensity of the carbon-impurity related luminescence lines in bulk-type Al_xGa_1–xAs and GaAs layers was found to be strongly reduced, as compared to the excitonic recombination lines, if the respective active layer was covered by a very thin confinement layer of either GaAs on top of Al_xGa_1–xAs or vice versa grown in the same growth cycle.     

Specific heat of Eu x Sr1−x Te

In this paper, we report on measurements of the specific heatC of single-crystalline Eu _x Sr_1–x Te at temperatures between 60 mK and 15 K and in magnetic fields up to 6 T. Pure antiferromagnetic EuTe shows unusual critical behavior in the vicinity of the Néel temperatureT _N=9.8 K with a positive critical exponent instead of the 3d-Heisenberg exponent =–0.12. Possible reasons for this discrepancy between theory and experiment include magnetic anisotropy effects due to magnetic dipole-dipole interactions, which may give rise to a cross-over of the critical behavior very close toT _N. This anisotropy is also seen in the specific heat below 1 K where an exponential decay ofC is observed, and in the dependence of the magnetic susceptibility on the direction of the applied field. With increasing dilution of EuTe with nonmagnetic Sr, the critical behavior changes: becomes negative and decreases continuously towards –1 atxx _c. This concentration dependence of was previously observed in the diluted ferromagnetic system Eu _x Sr_1–x S. Our data thus support that the apparent change in the critical behavior depends on the degree of disorder. Samples with concentrationx lower than the critical concentrationx _c reveal spin-glass behavior in the specific heat. In addition, the dependence ofT _N on magnetic fields is discussed. The data yield a normalized magnetic phase boundaryB _c(T)/B_c(T=0) vs.T _N(B)/T_N(B=0) which is independent of concentration.     

LaAg x In1−x

The structures of LaAg _x In_1–x alloys withx=0.75, 0.89 are determined by neutron diffraction on powder samples. The space group isI4/mmm (D _4h ^/17 ). The lattice constants splitting, the order parameter and the mean square vibrational amplitudes of the atoms are given in the temperature range from 20 KT300 K.