Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Scaling law of anomalous Hall effect in Fe/Cu bilayers

The scaling of anomalous Hall resistivity on longitudinal resistivity has been intensively studied in different magnetic systems, including multilayer and granular films, to examine whether a skew scattering or a side jump mechanism dominates in the origin of anomalous Hall effect (AHE). The scaling law is based on the premise that both resistivities are a consequence of electron scattering by the imperfections in the materials. By studying the anomalous Hall effect in the simple Fe/Cu bilayers, it was demonstrated that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.     

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

An obvious weak localization correction to anomalous Hall conductance(AHC) in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.     

Anomalous Hall effect and electron transport in ferromagnetic MnBi films

The electron transport properties of highly c-axis oriented MnBi thin films of various thicknesses have been investigated. Samples are metallic but the low temperature resistivity shows an unusual T(3) dependence. Transverse Hall effect measurements show that both the ordinary and anomalous Hall coefficients decrease with decreasing temperature below 300 K, but the ordinary Hall coefficient (R(0)) undergoes a sign reversal around 105 K, where the magnetic anisotropy also changes sign. Analysis of the Hall data for various samples shows that the anomalous Hall coefficient (R(s)) exhibits a strong ρ(2) dependence, where ρ is the longitudinal resistivity.     

薄膜厚度对GZO透明导电膜及其LED器件性能的影响

采用射频磁控溅射的方法制备了GZO透明导电薄膜,通过原子力显微镜(AFM)、X射线衍射仪(XRD)、霍尔效应测试仪及紫外-可见光分光光度计等手段研究了厚度对于GZO薄膜性能的影响,并制备了相应的LED器件。实验结果表明:随着薄膜厚度增加,薄膜结晶质量提高,薄膜的电阻率也随之降低。当厚度为500 nm时,薄膜的电阻率最低为2.79×10^-4 Ω·cm,同时其在460 nm蓝光区域的光透过率高达97.9%。对所制备的以GZO薄膜为透明电极的LED器件进行了测试分析,发现GZO薄膜厚度对LED的正向电压影响不大,但对LED芯片的出光效率有较大影响。     

Extraordinary Hall effect on Fe-rich amorphous thin films and Fe-rich/Cu multilayers

In this study we investigated the magnetic and transport properties of thin Fe-rich amorphous films and Fe-rich/Cu multilayers. We compared the extraordinary Hall effect in these two types of samples and discussed it in terms of thickness and sample structure. The thicker films exhibited a strong in-plane magnetic anisotropy, and by decreasing film thickness both saturated Hall resistivity and Hall sensitivity increase. A Hall resistivity value of 20 μΩ cm is observed in 100 nm thick Fe-rich films at 12 K and a sensitivity of 1.3 Ω/T is obtained at room temperature. Electrical conductance increases and Hall resistivity decreases when the films are sandwiched with Cu.     

Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy

Epitaxial Mn$_{4}$N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect (AHE) is investigated systematically. The Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic field. The magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from 300 K to 150 K. The AHE scaling law in Mn$_{4}$N films is influenced by the temperature-dependent magnetization, carrier concentration and interfacial scattering. Different scaling laws are used to distinguish the various contributions of AHE mechanisms. The scaling exponent $\gamma > 2$ for the conventional scaling in Mn$_{4}$N films could be attributed to the residual resistivity $\rho_{xx0}$. The longitudinal conductivity $\sigma_{xx}$ falls into the dirty regime. The scaling of $\rho_{\rm AH}=\alpha \rho_{xx0} +b\rho_{xx}^{n}$ is used to separate out the temperature-independent $\rho_{xx0}$ from extrinsic contribution. Moreover, the relationship between $\rho_{\rm AH}$ and $\rho_{xx}$ is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE, which demonstrates that the dominant mechanism of AHE in the Mn$_{4}$N films can be ascribed to the competition between skew scattering, side jump and the intrinsic mechanisms.     

Magnetic transport properties in iron/iron-oxide films

Iron/iron-oxide granular films were fabricated using reactive dc magnetron sputtering. Their structural, magnetic and transport properties were systematically studied. XPS and TEM confirmed the coexistence of Fe, FeO and Fe₂O₃. A metal–insulator transition was observed with the increasing of the oxygen component in the film. The temperature dependencies of longitudinal resistivity ρ_xx and anomalous Hall resistivity ρ_xy were discussed. We found the enhancement of ρ_xy and investigated the scaling law between anomalous Hall coefficient R_s and ρ_xx. In all the samples, R_s was found to be proportional to ρ_xx when ρ_xx is small, which indicated the skew scattering is dominant.     

High-field Hall resistivity and magnetoresistance of electron-doped Pr2-xCexCuO4-delta

We report resistivity and Hall effect measurements in electron-doped Pr2-xCexCuO4-delta films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising nonlinear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.     

Anomalous Hall Effect in Layered Ferrimagnet MnSb_2Te_4

We report on low-temperature electron transport properties of MnSb_2Te_4,a candidate of ferrimagnetic Weyl semimetal.Long-range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance,as well as sharp jumps in the magnetoresistance.At temperatures below 4K,a lnT-type upturn appears in the temperature dependence of longitudinal resistance,which can be attributed to the electron-electron interaction(EEI),since the weak localization can be excluded by the temperature dependence of magnetoresistance.Although the anomalous Hall resistance exhibits a similar lnT-type upturn in the same temperature range,such correction is absent in the anomalous Hall conductivity.Our work demonstrates that MnSb_2Te_4 microflakes provide an ideal system to test the theory of EEI correction to the anomalous Hall effect.     

Hall effect of tetragonal and orthorhombic SrRuO3 films

High quality orthorhombic and tetragonal SrRuO₃ thin films were grown by pulsed laser deposition on SrTiO₃(001) and Ba_0.75Sr_0.25TiO₃ buffered LaAlO₃(001) substrates. Resistivity vs. temperature curves showed a slope change at a Curie temperature of 147.5 ± 2 K for 40 nm thick films irrespective of crystalline symmetry. The Hall resistivity of both films contained an anomalous Hall contribution. The anomalous Hall coefficient was positive throughout the whole temperature range for the tetragonal film, whereas it showed a sign change at 143 K for the orthorhombic film. This is a strong indication that the Berry‐phase mechanism is the dominant anomalous Hall effect mechanism in SrRuO₃. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Impurity spin magnetization of thin Fe doped Au films

In order to probe the influence of the surface-induced anisotropy on the impurity spin magnetization, we measure the anomalous Hall effect in thin AuFe films at magnetic fields up to 15 T. The observed suppression of the anomalous Hall resistivity at low fields as well as the appearance of a minimum in the differential Hall resistivity at higher fields can be explained by our theoretical model, which takes into account the influence of a polycrystalline film structure on the surface-induced anisotropy. Our results imply that the apparent discrepancy between different experimental results for the size effects in dilute magnetic alloys can be linked to a different microstructure of the samples.     

Temperature and magnetic-field-enhanced hall slope of a dilute 2D hole system in the ballistic regime

We report the temperature (T) and perpendicular magnetic-field (B) dependence of the Hall resistivity rho(xy)(B) of dilute metallic 2D holes in GaAs over a broad range of temperature (0.02-1.25 K). The low B Hall coefficient, R(H), is found to be enhanced when T decreases. Strong magnetic fields further enhance the slope of rho(xy)(B) at all temperatures studied. Coulomb interaction corrections of a Fermi liquid (FL) in the ballistic regime can not explain the enhancement of rho(xy) which occurs in the same regime as the anomalous metallic longitudinal conductivity. In particular, although the metallic conductivity in 2D systems has been attributed to electron interactions in a FL, these same interactions should reduce, not enhance, the slope of rho(xy)(B) as T decreases and/or B increases.     

Quantum size effects for the extraordinary Hall effect in thin magnetic films

A theory for the extraordinary Hall effect in thin films is derived using the Kubo formalism. We calculate the skew-scattering contribution to the Hall resistivity. Oscillations of the resistivity with the thickness of the magnetic layers are obtained similar to the diagonal resistivity, but as the Hall current is due to d-electrons, the period of these oscillations is connected with the Fermi wave vector of the d-electrons.     

功率密度对中频磁控溅射制备 AZO薄膜性能的影向

利用中频磁控溅射法在普通玻璃衬底上沉积掺铝氧化锌(ZnO ∶ Al,简称AZO)薄膜,通过调整溅射功率密度参数得到沉积速率与功率密度之间的关系,制备了不同厚度的AZO薄膜.利用台阶仪、XRD、XPS、紫外可见分光光度计和Hall测试系统等方法研究了功率密度与厚度对AZO薄膜结构、组分、光学和电学性能的影响.实验结果表明...     

FexSn100-x合金颗粒薄膜的反常霍耳效应

采用离子束溅射的方法制备了一系列不同原子比的Fe_xSn_100-x合金颗粒膜，系统地研究了该体系的反常霍耳效应.在该薄膜中发现了铁磁金属/非磁金属体系中最大的霍耳电阻率，讨论了不同原子配比、薄膜厚度对霍耳效应的影响.通过研究饱和霍耳电阻率ρ_xys同电阻率ρ_xx的关系，讨论了反常霍耳效应的机理. 关键词： 反常霍耳效应 xSn_100-x薄膜')" href="#">Fe_xSn_100-x薄膜     

THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES

Based on the theoretical results of inversion layers model and interpenetrating network model, we studied the anomalous Hall effect of heterogenous semiconductor samples, and obtained the following results: (1) the wider the sample energy gap, the higher the temper-ature at which anomalous Hall effect begins to appear; (2) the lower the sample resistivity, the higher the temperature at which anomalous Hall effect begins to appear, which is further verified in our experiment; (3) mobility is the main factor which determines what role p-n junction plays in sample Hall voltage; (4) for n-Ge sample with inversion layers structure, with the increase of p-type region, the Hall effect changes from normal n-type Hall effect to anomalous Hall effect of the single dip type, then to anomalous Hall effect of the second reversal type.     

Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.     

Strong nonlinearity and hysteresis of Hall resistance versus magnetization in nickel thin films

The anomalous Hall effect (AHE) in ferromagnetic materials is perhaps one of the oldest unresolved mysteries in physics. First observed in 1881, its mechanism is still a controversial topic today. The question remains whether AHE is caused by intrinsic (Berry phase and band structure) or extrinsic (defect scattering) effects or a combination of both. Here we present experimental observation in nickel thin films that seems to add to the mystery, but may in fact provide crucial clues for ultimately resolving the controversy. The key observation is that the Hall resistivity of nickel films is a strongly nonlinear function of the magnetization and displays clear hysteresis with respect to M. Specifically, at low temperatures, the anomalous Hall coefficient switches between two saturated values under the magnetic field with a narrow transition region, but with a strong hysteresis, in contrast to the slow saturation of the magnetization. The nonlinearity and the hysteresis become more apparent with decreasing temperature or film thickness. Despite the simplicity of the lattice and magnetic structure of nickel films, these results are outside our current understanding of AHE, whether using intrinsic or extrinsic mechanisms of AHE. It presents a challenge for these models, and may be used as a test of validity for both types of theories.     

Scaling of anomalous hall resistivity in Nd2(Mo(1-x)Nb(x))2O7 with spin chirality

We have investigated scaling of anomalous Hall resistivity with longitudinal resistivity (rho(xx)) in pyrochlore type Nd2(Mo(1-x)Nb(x))2O7 with spin chirality. Scattering rate of the conduction electron on the Mo sublattice can be varied with x from band transport to polaron hopping, while keeping the two-in-two-out structure of the Nd moments intact. The anomalous part of the Hall resistivity arising from the Mo spin chirality (rho(H)(chi)) shows a clear scaling behavior with rho(xx) (rho(H)(chi) proportional to rho(xx)0.39), in accord with a recent theoretical result based on the Berry phase mechanism in the hopping conduction regime.