Structural, electrical, optical and magnetic properties of Co0.2AlxZn0.8−xO films

Co_0.2Al_xZn_0.8−xO films prepared with different molar ratio of aluminum nitrate to zinc acetate were deposited on substrates by the sol-gel technique. X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Co_0.2Al_xZn_0.8−xO diluted magnetic semiconductors. The authors found that the intensity of the acceptor-related photoluminescence increased with increasing aluminum concentration and an increase in the number of the acceptor-like defects (zinc vacancies especially) in the Co_0.2Al_xZn_0.8−xO film might lead to the enhancement of the magnetic properties. This implies that controls of the aluminum concentration and the number of the acceptor-like defects are important factors to produce strong ferromagnetism Co_0.2Al_xZn_0.8−xO films prepared by the sol-gel method.     

Ab initio calculation of Zn0.8Mn0.2O1−yNy

Based on first-principles spin-density functional calculations, using the Korringa–Kohn–Rostoker method (KKR) combined with the coherent potential approximation (CPA), we investigated the magnetic and half-metallic properties of Mn-doped p-type ZnO and the mechanism which control these properties. Mn-doped ZnO is anti-ferromagnetic spin-glass state, but it becomes half-metallic ferromagnetic upon holes doping. The electronic structure, total magnetic moment of Zn_0.8Mn_0.2O_1−yN_y and magnetic moments of Mn and N in Zn_0.8Mn_0.2O_1−yN_y are calculated for different holes (y) concentrations. In this paper we address the origin of half-metallic and ferromagnetic properties as controlled and oriented by the nature of hybridization of the Mn (3d) state and host p(N) states. The band structure has been used to explain the strong ferromagnetism observed in Zn_0.8Mn_0.2O_0.1N_0.9.     

Effect of the Optical Pumping and Magnetic Field on the States of Phase Separation Domains in Eu0.8Ce0.2Mn2O5

The effect of optical pumping and applied magnetic field on the characteristics of ferromagnetic layers in one-dimensional superlattices is studied. At low enough temperatures, these layers correspond to phase separation domains in RMn₂O₅ and R_0.8Ce_0.2Mn₂O₅ multiferroics. The formation of such domains occurs owing to the charge ordering of Mn³⁺ and Mn⁴⁺ ions and to the finite probability for e_g electrons to tunnel between these pairs of ions. The volume occupied by such superlattices is rather small, and they can be treated as isolated ferromagnetic semiconductor heterostructures, spontaneously formed in the host crystal. The sequences of ferromagnetic resonances related to the superlattice layers in Eu_0.8Ce_0.2Mn₂O₅ are studied. The characteristics of these resonances give information on the properties of such layers. For the first time, it is demonstrated that the optical pumping gives rise to a new metastable state of superlattices, which can be recovered by the magnetic field cycling to the state existing before the optical pumping. It is found that the superlattices recovered by the magnetic field exist up to temperatures higher than those in as-grown crystals.

     

Structure and magnetic order in La0.7Ca0.3Mn0.5Co0.5O3 and La0.8Sr0.2Mn0.5Co0.5O3 perovskites

In this paper we report the study of the perovskites La_0.7Ca_0.3Mn_0.5Co_0.5O₃ and La_0.8Sr_0.2Mn_0.5Co_0.5O₃ by neutron powder diffraction at various temperatures and magnetization measurements in zero applied field and at low cooling regimes. The replacement of half Mn by Co in La_0.7Ca_0.3MnO₃ and La_0.8Sr_0.2MnO₃ destroys their long-range ferromagnetism exhibiting a cluster glass ferromagnetic order similar to the one observed in many cobaltites.     

The pyroelectric effect in magnetoelectric 0.8 PZT-0.2 MZF and 0.8 PZT-0.2 NZF composites

The pyroelectric response is measured using the dynamic method in preliminarily polarized magnetoelectric 0.8PbZr_0.53Ti_0.47O₃-0.2Mn_0.4Zn_0.6Fe₂O₄(0.8 PZT-0.2 MZF) and 0.8PbZr_0.53Ti_0.47O₃-Ni_0.4Zn_0.6Fe₂O₄ (0.8 PZT-0.2 NZF) composites, where PZT is a ferroelectric, and MZF and NZF are manganese-zinc and nickel-zinc ferrites, respectively. Values of the pyroelectric coefficient Γ for the materials under study vary over the range of 1.5–4 × 10⁻⁸ C cm⁻² K⁻¹. It is shown that the polarized samples of the composites have a heterogeneous distribution of polarization across the sample thickness. The heterogeneity is more pronounced in the near-surface layers of the investigated materials.     

A comparative study on Zn0.8Cd0.2O films deposited on different substrates

Highly (0 0 2)-oriented Zn_0.8Cd_0.2O crystal films were prepared on different substrates, namely, glass, Si(1 1 1) and α-Al₂O₃(0 0 1) wafers by the dc reactive magnetron sputtering technique. The Zn_0.8Cd_0.2O/α-Al₂O₃ film has the best crystal quality with a FWHM of (0 0 2) peak of 0.3700°, an average grain size of about 200 nm and a root-mean-square surface roughness of about 70 nm; yet the Zn_0.8Cd_0.2O/glass holds the worst crystal quality with a much larger FWHM of 0.6281°. SIMS depth profile shows that the Zn and O compositions change little along the film depth direction; the Cd incorporation also almost holds the line towards the top surface other than an accumulation at the interface between the film and the substrate. The Cd content in the film is nearly consistent with that in target.     

Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

Synthesis and positron characterizations of ferromagnetic Zn0.98Mn0.02O and paramagnetic Zn0.98Mn0.02O samples

Room temperature ferromagnetic and paramagnetic Zn_0.98Mn_0.02O samples have been synthesized by the solid state reaction method and by selecting the final annealing temperature. Employing positron annihilation techniques, defects for both samples have been characterized. The results indicate that the presence of cation vacancy type defects is relatively less in the ferromagnetic Zn_0.98Mn_0.02O sample than in the paramagnetic Zn_0.98Mn_0.02O sample.     

Effect of annealing atmosphere on ferromagnetism in Mn doped ZnO films

This paper reports that Zn_0.97Mn_0.03O thin films have been prepared by radio-frequency sputtering technology followed by rapid thermal processing in nitrogen and oxygen ambient respectively. Magnetic property investigation indicates that the films are ferromagnetic and that the Curie temperature (T_c) is over room temperature. It is observed that the saturation magnetization of the films increases after annealing in nitrogen ambience but decreases after annealing in oxygen. Room temperature photoluminescence spectra indicate that the amount of defects in the films differs after annealing in the different ambiences. This suggests that the ferromagnetism in Zn_0.97Mn_0.03O films is strongly related to the defects in the films.     

Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution

Ferromagnetic insulator Pr_0.8Ca_0.2Mn_1–yCo_y O₃ (0 ≤ y ≤ 0.7) thin films were epitaxially grown by pulsed laser deposition on substrates of (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (100). To probe the ferromagnetic insulator state, the Co content dependences of the structural, magnetic, and transport properties were studied. Variation of lattice constant by the Co substitution is well reproduced considering that divalent and trivalent Co ions substitute for Mn ions at the perovskite B‐sites. For 0 ≤ y ≤ 0.3, the Curie temperature, saturation magnetization, and magnetoresistance increase with increasing Co content, retaining the insulating properties. Detailed analyses of transport and magnetic properties indicate the contribution of both double exchange and superexchange interactions to the appearance of the ferromagnetic insulating phase. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

退火对Mn和N共掺杂的Zn0.88Mn0.12O:N薄膜特性的影响

以NH₃为掺N源,采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn_1-xMn_xO:N薄膜,生长温度为300℃,然后在O₂气氛中400℃退火0.5 h.X射线衍射测量表明,Zn_0.88Mn_0.12O(Mn掺杂)薄膜或Zn_0.88Mn_0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构,未检测到杂质相 关键词： ZnO薄膜 Mn和N共掺杂 电学特性 磁特性     

Mn和N共掺ZnO稀磁半导体薄膜的研究

使用对Zn₂N₃:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μ_B—0.61 μ_B.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好. 关键词： 磁性半导体 受主掺杂 空穴媒介的铁磁性     

Structural, thermal and electrochemical properties of chromium-substituted LiNi0.8Co0.2O2

LiCr_yNi_0.8−yCo_0.2O₂ compositions, where y=0.000, 0.010, 0.025, 0.040, 0.050, 0.075 and 0.100, were synthesized via a conventional ceramic route. X-ray diffraction studies indicated cation mixing for the compositions with y ≥ 0.05. Cyclic voltammetric studies revealed that the systems were reversible only when y was lower than 0.05. High levels of substitutions with Cr resulted in highly irreversible systems, either due to cation mixing or the displacement of the substituent ions to the lithium inter-slab regions, or both. The charge-discharge characteristics of LiCr_yNi_0.8−yCo_0.2O₂ were similar to those of the unsubstituted material over ten cycles. All the other substituted compositions showed much lower capacities and reduced cyclability. LiCr_0.025Ni_0.775Co_0.2O₂ gave a first-cycle capacity of 169 mAh/g in the 3.0 to 4.4 V window at a 0.1 C rate, fading to 156 mAh/g in the tenth cycle. Differential scanning calorimetric studies revealed that substituting with chromium produced no benefit to thermal stability. The structural, thermal and electrochemical properties of the pristine and Cr-substituted LiNi_0.8Co_0.2O₂ compositions are discussed.     

氧空位对钴掺杂氧化锌半导体磁性能的影响

从实验和理论上阐述了氧空位对Co掺杂ZnO半导体磁性能的影响.采用磁控溅射法在不同的氧分压下制备了Zn_095Co_005O薄膜,研究了氧分压对薄膜磁性能的影响.实验结果表明,高真空条件下制备的Zn_095Co_005O薄膜具有室温铁磁性,提高氧分压后制备的薄膜铁磁性逐渐消失.第一性原理计算表明,在Co掺杂ZnO体系中引入氧空位有利于降低铁磁态的能量,铁磁态的稳定性与氧空位和Co之间的距离密切相关. 关键词： Co掺杂ZnO 稀磁半导体 第一性原理计算 氧空位缺陷     

Effects of Ca doping on the electrochemical properties of LiNi0.8Co0.2O2 cathode material

LiNi_0.8Co_0.2O₂ and Ca-doped LiNi_0.8Co_0.2O₂ cathode materials were synthesized via a rheological phase reaction method. It is found that the Ca doping significantly improves reversible capacity, cycling performance, thermal stability and rate capability. The Ca-doped LiNi_0.8Co_0.2O₂ cathode material maintains nearly its initial discharge capacity up to 100 cycles at room temperature. It also delivers an initial discharge capacity of 183 mA h g^− 1 and still keeps 131 mA h g^− 1 even after 120 cycles at 60 °C. These results, together with the X-ray diffraction and electrochemical impedance spectroscopy analysis, reveal that Ca²⁺ ions occupy Li⁺ ion sites to form Ca_Li defects and lithium vacancies (V_Li′), which reduce the resistance and increases conductivity of LiNi_0.8Co_0.2O₂.     

Fabrication and characterization of p-ZnO/n-Zn0.8Cd0.2O/n-ZnO heterojunction

We report the fabrication of p-ZnO/n- Zn_0.8Cd_0.2O/n-ZnO heterojunctions that contain Al–N codoped p-ZnO, undoped n- Zn_0.8Cd_0.2O, and Al-doped n-ZnO layers. An InZn alloy is used as the p- and n-ZnO Ohmic contact electrodes. This structure exhibits improved rectifying p–n junction behavior, with forward turn-on voltage in the range of 3–5 V. The reverse breakdown voltage can be as high as 15 V, with 10^?6-A reverse leakage current. Photoluminescence spectra show strong near band-edge emissions for both p- and n-ZnO at 368 nm and for undoped n- Zn_0.8Cd_0.2O, which is substantially red-shifted to 399 nm.     

Structure and oxygen stoichiometry of SrCo0.8Fe0.2O3−δ and Ba0.5Sr0.5Co0.8Fe0.2O3−δ

High temperature X-ray diffraction (HT-XRD), temperature programmed desorption (TPD), thermogravimetric analysis–differential thermal analysis (TGA/DTA) and neutron diffraction were combined to determine the structure and oxygen stoichiometry of SrCo_0.8Fe_0.2O_3−δ (SCF) and Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3−δ (BSCF) up to 1273 K in the pO₂ range of 1 to 10^− 5 atm. Formation of the vacancy-ordered brownmillerite phase, SrCo_0.8Fe_0.2O_2.5, was observed as a region of zero oxygen release in the TPD measurements and confirmed by HT-XRD and TGA/DTA. No ordering was observed in the BSCF system by any of the techniques utilized in this work. The oxygen vacancy concentration of BSCF was found to be considerably higher than that of SCF and always higher than that of the ordered brownmillerite phase of SCF, δ = 0.5. The combination of a high vacancy concentration and absence of ordering leads to higher oxygen permeation fluxes through BSCF membranes in comparison to SCF.     

Observation of optical properties related to room-temperature ferromagnetism in co-sputtered Zn1−xCoxO thin films

We report on the analysis of optical transmittance spectra and the resulting ferromagnetic characteristics of sputtered Zn_1−xCo_xO films. Zn_1−xCo_xO films were prepared on (0001)-oriented Al₂O₃ substrates by the radio-frequency (rf) magnetron co-sputtering method. The XRD results showed that the crystallinity of films was properly maintained up to x=0.30 and no second phase peaks were detected up to x=0.40. The transmittance spectra showed both the increase of the absorption band intensity and the red shift of the absorption peak as well as the band edge with increasing x. We have proved experimentally that these changes depend on Co concentration. These optical properties suggest that sp-d exchange interactions and typical d-d transitions become activated with increasing x, which leads to the enhancement of ferromagnetic properties in Zn_1−xCo_xO films as shown in the AGM results. Therefore, it is concluded that the ferromagnetism derives from the substitution of Co²⁺ for Zn²⁺ without changing the wurtzite structure.     

Synthesis and magnetic properties of Zn1−xMnxO films prepared by the sol-gel method

We report on the ferromagnetic characteristics of Zn_1−xMn_xO films (x=0.1-0.3) prepared by the sol-gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (T_C) and the coercive field (H_C) were ∼39 K and ∼2100 Oe for the film of x=0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn_0.8Mn_0.2O film showing the ratio, Zn:Mn:O≅1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film.     

Electrical conductivity and thermal expansion of La0.8Sr0.2(Mn,Fe,Co)O3-δ perovskites

La_1−xSr_xMeO₃ (Me = Mn, Co, Fe) perovskites are used as cathodes and are also attractive materials for application as the contact layer between cathode and interconnect in solid oxide fuel cells. In this contribution, three perovskite series, La_0.8Sr_0.2Mn_1−xCo_xO_3-δ (series 1), La_0.8Sr_0.2Fe_1−xCo_xO_3-δ (series 2) and La_0.8Sr_0.2Mn_1−x/2Fe_(1−x)/2Co_xO_3-δ (series 3) with x = 0, 0.25, 0.5, 0.75 and 1 were re-investigated under identical synthesis and measurement conditions with the aim of obtaining a full overview of the quasi-ternary system La_0.8Sr_0.2MnO_3-δ–La_0.8Sr_0.2FeO_3-δ–La_0.8Sr_0.2CoO_3-δ. The distribution of the different crystallographic phases in the selected series, the DC electrical conductivity and the thermal expansion coefficients are presented.