Formation and characterization of high-density Fe cluster-assembled films with soft magnetic behaviors

High-density, magnetically soft Fe cluster-assembled films were obtained at room temperature by an energetic cluster deposition. Size-monodispersed Fe clusters with the mean cluster size d = 9, 13 and 16 nm were produced using a plasma-gas-condensation technique. Ionized clusters in cluster beam were accelerated electrically and deposited onto the substrate together with neutral clusters from the same cluster source. The morphology, microstructure and magnetic properties of the cluster-assembled films have been studied by an atomic force microscopy, scanning electron microscopy, transmission electron microscopy, and superconducting quantum interference device magnetometer. By increasing the impact energy of the ionized clusters up to 0.6 eV/atom, the Fe cluster-assembled film has a packing fraction of 0.86±0.03, and reveals a soft magnetic behavior. In addition, it is found that oxidization of the cluster-assembled films is remarkably suppressed with the increase in the density of the films.     

Cluster–surface interaction studied by time-resolved two-photon photoemission

n ⁺ clusters (n=2-9)deposited onto highly oriented pyrolytic graphite (HOPG) substrates at liquid nitrogen temperatures. The deposition was carried out with variable kinetic energies of the clusters. Clusters deposited with high kinetic energy (up to 60 eV/cluster) become fragmented upon impact. For low deposition energies (1–4 eV/cluster) the size dependence of the photoelectron spectra reveals a pronounced odd/even effect, which is well known for gas phase silver clusters. This indicates that the soft deposited clusters retain their size and identity on the sample. The phase of the odd/even effect suggests that transient negatively charged cluster ions serve as an intermediate step in the two-photon photoemission process. The lifetime of the anions rises with cluster size. This is attributed to an increasing electronic density of states for larger clusters. Received: 26 October 1998 / Revised version: 16 December 1998     

Molecular dynamics investigation of deposition and annealing behaviors of Cu atoms onto Cu(0 0 1) substrate

The deposition growth and annealing behaviors of Cu atoms onto Cu(0 0 1) are investigated in atomic scale by molecular dynamics (MD) simulation. The results indicate that the film grows approximately in a layer-island mode as the incident energy is from 1 to 5 eV, while surface intermixing can be significantly observed at 10 eV. The surface roughness of the film decreases with increasing the incident energy, and the film after annealing becomes smoother and more ordered. These phenomena may be attributed to the enhanced atomic mobility for higher incident energy and thermal annealing. It also indicates that atomic mixing is more significant with increasing both the incident energy and substrate temperature. In addition, the peak-to-peak distances of radial distribution function (RDF) clearly indicate that the films before and after annealing are still fcc structure except for that at the melting temperature of 1375.6 K. After annealing, the film at the melting temperature returns to fcc structure instead of amorphous. Moreover, the residual stress and Poisson ratio of the film are remarkably affected by the thermal annealing. Furthermore, the density of thin film is obviously affected by the substrate temperature and annealing process. Therefore, one can conclude that high incident energy, substrate temperature and thermal annealing could help to enhance the surface morphology and promote the microstructure of the film.     

VUV-photoelectron spectroscopy on lead clusters deposited from the pulsed arc cluster ion source (PACIS)

Lead clusters grown in a pulsed arc cluster ion source (PACIS) are soft-landed under UHV conditions on cooled polycrystalline silver targets. VUV-photoelectron spectroscopy with light from the synchrotron BESSY applied to mass-selected clusters on cold (160 K) substrates shows that the Pb 5d core level binding energies depend on cluster size and-only beyond a critical amount of deposited clusters-on the coverage . A decreasing particle size induces a core level shift towards lower binding energy with respect to the bulk value, the maximum shift being –0.33 eV. The same value is achieved by atom deposition and can be explained by a Born-Haber cycle. The limits for small two-dimensional and large three-dimensional clusters will qualitatively be discussed by the same model. Deposition on a warm substrate, however, leads-at least for small systems-to a gradual line shift with .     

The microstructure and magnetic behavior of Co nanostructured film prepared by energetic cluster beam deposition

Cobalt nanostructured films were successfully prepared by depositing Co clusters onto a Si(100) substrate in our home-made cluster beam deposition apparatus. During preparation, the energy of the cluster beam was accelerated by applying an external electric field. The effect of the cluster beam energy on the microstructure, phase transformation and magnetic behavior was investigated for the cluster-assembled film in the case of both low energy cluster deposition and energetic cluster deposition. The scanning electron microscopy observation confirms that the films are assembled by the regular spherical nanoclusters. Compared with the low-energy Co cluster-assembled film, the magnetization of the energetic Co cluster-assembled film was improved significantly. The present work describes an effective way to prepare the magnetic nanostructured films.     

低能Cu13团簇沉积薄膜的分子动力学模拟研究

利用分子动力学模拟方法对Cu₁₃团簇在Fe（001）表面上沉积薄膜进行了研究,分析了不同沉积条件对薄膜生长模式的影响,对比分析了不同沉积条件下表面粗糙度、缺陷分布和外延度等薄膜性质的差异。Cu₁₃团簇的初始沉积能量范围为0.1~10.0 eV/atom,沉积率为1.0 clusters/ps,衬底温度分别为300,700和1 000 K。模拟结果表明:团簇初始沉积能量主要影响薄膜生长模式,当初始沉积能量为7.5 eV/atom的Cu₁₃团簇沉积到温度为300 K的Fe（001）表面时,可形成表面光滑、内部缺陷少和较好外延度的高质量Cu薄膜。     

Formation of CdO films from chemically deposited Cd(OH)2 films as a precursor

Formation of cadmium hydroxide at room temperature onto glass substrates from an aqueous alkaline cadmium nitrate solution using a simple soft chemical method and its conversion to cadmium oxide (CdO) by thermal annealing treatment has been studied in this paper. The as-deposited film was given thermal annealing treatment in oxygen atmosphere at 450 °C for 2 h for conversion into cadmium oxide. The structural, surface morphological and optical studies were performed for as-deposited and the annealed films. The structural analyses revealed that as-deposited films consists of mixture of Cd(OH)₂ and CdO, while annealed films exhibited crystalline CdO. From surface morphological studies, conversion of clusters to grains after annealing was observed. The band gap energy was changed from 3.21 to 2.58 eV after annealing treatment. The determination of elementals on surface composition of the core-shell nanoparticles of annealed films was carried out using X-ray photoelectron spectroscopy (XPS).     

Investigation of W-Ge-N deposited on Ge as a diffusion barrier for Cu metallization

The properties of W-Ge-Nthin films were investigated as a diffusion barrier material for Cu metallization. The W-Ge-Nfilms were grown by reactive sputtering on a single crystal Ge substrate. This was followed by in-situ deposition of Cu. Diffusion barrier test was performed by annealing the film stack under Ar atmosphere. Phase identification and film crystallization were determined by X-ray diffraction. The deposited W-Ge-Nfilms remained amorphous even after high temperature annealing. The Cu diffusion profile in the film was assessed by Auger electron spectroscopy and energy dispersive spectroscopy. The results indicate that Cu diffusion was minimal in W-Ge-Nfilms even at high annealing temperatures. Interface reactions and properties were analyzed by cross-section transmission electron microscopy. The results suggest that W-Ge-Nmay be a superior diffusion barrier as compared to WN_x for Cu metallization. PACS 66.30.Ny; 68.35.Rh; 68.37.Lp; 68.60.Dv     

退火温度对富硅氮化硅薄膜发光特性和结构的影响

采用直流等离子体增强化学气相沉积(PECVD)法在(100)单晶硅片表面生长富硅氮化硅薄膜,研究了不同的退火温度对氮化硅薄膜发光性质和结构的影响。研究发现,随着退火温度的升高,氮化硅薄膜的发光强度逐渐减弱,发光是由缺陷能级引起的,在900 ℃时荧光基本消失。XPS测试表明,在N₂氛围900 ℃下退火,氮化硅薄膜中未有硅相析出,故未表现出硅量子点的发光。FTIR测试也为PL结论提供了一定的证据。     

Synchrotron radiation studies of mass-selected Fe nanoclusters deposited in situ

A portable UHV-compatible gas aggregation cluster source, capable of depositing clean mass-selected nanoclusters in situ, has been used at synchrotron radiation facilities to study the magnetic behaviour of exposed and Co-coated Fe clusters in the size range 250 to 540 atoms. X-ray magnetic circular dichroism (XMCD) studies of isolated and exposed 250-atom clusters show a 10% enhancement in the spin magnetic moment and a 75% enhancement in the orbital magnetic moment relative to bulk Fe. The spin moment monotonically approaches the bulk value with increasing cluster size but the orbital moment does not measurably decay till the cluster size is above ∼ 400 atoms. The total magnetic moments for the supported particles though higher than the bulk value are less than those measured in free clusters. Coating the deposited particles with Co in situ increases the spin moment by a further 10% producing a total moment per atom close to the free cluster value. At low coverages the deposited clusters are super-paramagnetic at temperatures above 10 K but a magnetic remanence at higher temperature emerges as the cluster density increases and for cluster films with a thickness greater than 50 ?(i.e. 2-3 layers of clusters) the remanence becomes greater than that of an Fe film of the same thickness produced by a conventional deposition source. Thick cluster-assembled film show a strong in-plane anisotropy. Received 14 December 2000     

Interaction of silver atoms with iridium and with a two-dimensional graphite film on iridium: Adsorption,desorption, and dissolution

The initial stages in the interaction of silver with the (111)Ir surface and with a two-dimensional graphite film (2D GF) on (111)Ir were studied by high-resolution electron Auger spectroscopy in ultrahigh vacuum. The growth mechanisms of silver films and the desorption fluxes of Ag atoms were determined, and their desorption energies estimated. It was found that the Ag desorption fluxes from a 2D GF on Ir and from a thick silver film on the pure metal are similar and considerably (an order of magnitude) smaller than the sublimation fluxes from bulk silver at the same temperatures. The activation energy for desorption from a submonolayer film varies from 3.2 eV for coverage θ=1 to 3.7 eV at θ ～ 0. It was shown that silver atoms do not penetrate into the substrate bulk throughout the temperature range covered (300–1800 K).     

Softlanding and STM imaging of Ag<Subscript> 561</Subscript> clusters on a C<Subscript> 60</Subscript> monolayer

The low energy deposition of silver cluster cations with 561 (±5) atoms on a cold fullerene covered gold surface has been studied both by scanning tunneling microscopy and molecular dynamics simulation. The special properties of the C₆₀/Au(111) surface result in a noticeable fixation of the clusters without a significant change of the cluster shape. Upon heating to room temperature we observe a flattening or shrinking of the cluster samples due to thermal activation. Similar changes were observed also for mass selected Ag clusters with other sizes. For comparison we also studied Ag islands of similar size, grown by low temperature deposition of Ag atoms and subsequent annealing. A completely different behavior is observed with much broader size distributions and a qualitatively different response to annealing.     

The Fate of a Cluster Colliding onto a Substrate Dissipation of Translational Kinetic Energy

The fate of clusters emitted onto a substrate falls into several categories including repulsion, soft landing, migration, and explosion, depending on the interaction between the cluster and the substrate. This dynamic behavior of the clusters controls thin-film formation processes from clusters such as cluster ion beam deposition and chemical vapor deposition. Here we describe the collision processes of both Al and Au clusters with a kinetic energy of 0.56 eV/atom onto an amorphous SiO₂ substrate studied by molecular dynamics simulation, focusing on the dissipation of translational kinetic energy during the collision process. The simulation elucidated that the activation of thermal vibrational energy of the substrate promoted the sticking of the colliding clusters on the substrate. This result suggests that the dissipation of the translational kinetic energy of the colliding cluster is one of the factors that determine the structure formed on a substrate from vapor phase.     

The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 oC exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln(σ_dark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 oC without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 oC has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.     

Grain boundary potential and charge density at grain boundaries of chemically prepared thin silver sulfide films

The grain boundary potential and interface state charge density at the grain boundaries of silver sulfide (Ag₂S) thin films prepared by chemical conversion of cadmium sulfide (CdS) films have been determined from the dc resistance of the material and are found to be sensitive to annealing. A reduction in the grain boundary potential and the grain boundary charge density of the film has been noticed when the source CdS film is annealed at different temperatures prior to chemical conversion. The variation in the grain boundary charge density of the grown Ag₂S film with source annealing temperature has been found to be similar to that of thin cadmium sulfide film, reported earlier. An additional low temperature heat treatment of the sample results in an enhancement in the charge density at the grain boundaries. The change in the silver vacancy and/or oxygen and sulfur content of the films as revealed from the energy dispersive spectra of the films suggests possible role of film composition on the grain boundary charge density.     

Aggregates of iron in ytterbium films

Films of ytterbium doped with iron (0.3?C1.6 at.% Fe) have been prepared by co-deposition of atomic beams of the elements onto Kapton substrates under high vacuum. Iron is immiscible in ytterbium and various iron species are expected to occur. XRD reveals a mixture of fcc and hcp ytterbium. The Mössbauer spectra are interpreted with contributions from monomeric iron on interstitial sites, two types of neighboring substitutional iron aggregates and two types of clusters formed upon diffusion. The present data supplement earlier data obtained for 0.5 and 5 at.% Fe. There is no systematic correlation of cluster formation with increasing iron concentration. There are indications that clusters are formed more easily for thin films. We conclude that cluster formation occurs mainly on the film surface and is limited by the slow diffusion from inside films.     

Influence of air annealing on the structural, morphological, optical and electrical properties of chemically deposited ZnSe thin films

Zinc selenide nanocrystalline thin films are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition (CBD) method. The ZnSe thin films are annealed in air for 4 h at various temperatures and characterized by structural, morphological, optical and electrical properties. The as-deposited ZnSe film grew with nanocrystalline cubic phase alongwith some amorphous phase present in it. After annealing metastable nanocrystalline cubic phase was transformed into stable polycrystalline hexagonal phase with partial conversion of ZnSe into ZnO. The optical band gap, E_g, of as-deposited film is 2.85 eV and electrical resistivity of the order of 10⁶-10⁷ Ω cm. Depending upon annealing temperature, decrease up to 0.15 eV and 10² Ω cm were observed in the optical band gap, E_g, and electrical resistivity, respectively.     

X-ray photoelectron spectroscopy of Se films grown by hot wall epitaxy

The X-ray photoelectron spectroscopy (XPS) performed on Se films obtained by vacuum deposition and hot wall epitaxy (HWE) indicated shifts in the binding energies of the core-levels. The observed shift of 3.5 eV in the XPS spectrum of 3d level towards the higher binding energy in vacuum deposited film was associated with the Se₈ molecular state. On the other hand, the 3d-level XPS spectrum of Se films grown by HWE indicated an assymmetrical doublet. From the peak positions it was ascertained that the film was retained its bulk characteristic and a partial shift of 2.6 eV was interpretated for the presence of Se₆ molecules.     

Stability of a deposited liquid cluster

The fragmentation of silver liquid clusters deposited onto a silicon surface is observed after heating the clusters to 1073 K and subsequent annealing with the exposition time 3 min. This contradicts macroscopic models of a liquid drop deposited on a surface if we use critical parameters of bulk silver. Some versions are analyzed that are based on cluster properties and may explain the phenomenon of cluster fragmentation. An experiment is suggested for clarifying the nature of the cluster fragmentation phenomenon and cluster critical phenomena.     

扩散掺杂的p型ZnO薄膜的光学性质研究

采用原子层沉积技术(atomic layer deposition)在InP衬底上生长ZnO薄膜,并在不同温度下(500和700 ℃)进行热退火处理,将P掺杂进入ZnO,得到p型ZnO薄膜。样品的光学特性通过光致发光光谱(photoluminescence, PL)来测定,得出热退火温度是影响P扩散掺杂的重要因素,低温PL光谱中,700 ℃热退火1 h样品的光谱展现出四个与受主相关的发射峰：3.351,3.311,3.246和3.177 eV,分别来自受主束缚激子的辐射复合(A°X)、自由电子到受主的发射(FA)、施主受主对的发射(DAP)以及施主受主对的第一纵向声子伴线(DAP-1LO),计算得到受主束缚能为122 meV,与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂,解决了制约ZnO基光电器件发展的主要问题, 对ZnO基半导体材料及其光电器件的发展有重要意义。