硅纳米结点电子输运性质的计算

运用第一性原理密度泛函理论结合非平衡格林函数方法,对3个Si原子构成的直线链耦合在Au(100)面形成的三明治结构的纳米结点的电子输运进行计算.结果得到结点电导随距离的变化,当d_z=1.584 nm时,结合能最小,结构最稳定,此时Si-Si键长为0.216 nm,Si-Au键长为0.227 nm,电导为0.729 G₀(G₀=2e²/h),其电子传输通道主要由Si原子的p_x、p_y轨道电子构成;随着外电压的增大,结点的电导减小,而其I-V曲线表现出线性特征.     

Si3Xn (X=C,O,N;n=1,2)团簇的密度泛函研究

使用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G*基组水平上对Si3Xn(X=C,O,N;n=1,2)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.并对最稳定结构的电子结构、振动特性、成键特性和电荷特性等进行了理论研究.结果表明团簇的几何结构都是平面结构,通常Si3X2出现是Si-X键,较少出现X-X键;而Si3X中出现Si-X键和Si-Si键共存,Si3Xn(X=C,O,N;n=1,2)团簇的电荷布局分布表明这种电荷转移的作用使得团簇中所有X原子呈负电性,Si原子显正电性.处于不同位置的Si原子呈不同大小布局数,而且由于Si3X2的对称性,2个X负电性相同.     

Effects of the edge shape and the width on the structural and electronic properties of silicene nanoribbons

Under the generalized gradient approximation (GGA), the structural and electronic properties are studied for H-terminated silicene nanoribbons (SiNRs) with either zigzag edge (ZSiNRs) or armchair edge (ASiNRs) by using the first-principles projector-augmented wave potential within the density function theory (DFT) framework. The results show that the length of the Si-H bond is always 1.50 Å, but the edge Si-Si bonds are shorter than the inner ones with identical orientation, implying a contraction relaxation of edge Si atoms. An edge state appears at the Fermi level E_F in broader ZSiNRs, but does not appear in all ASiNRs due to their dimer Si-Si bond at edge. With increasing width of ASiNRs, the direct band gaps exhibit not only an oscillation behavior, but also a periodic feature of Δ_3n > Δ_3n+1 > Δ_3n+2 for a certain integer n. The charge density contours analysis shows that the Si-H bond is an ionic bond due to a relative larger electronegativity of H atom. However, all kinds of the Si-Si bonds display a typical covalent bonding feature, although their strength depends on not only the bond orientation but also the bond position. That is, the larger deviation of the Si-Si bond orientation from the nanoribbon axis as well as the closer of the Si-Si bond to the nanoribbon edge, the stronger strength of the Si-Si bond. Besides the contraction of the nanoribbon is mainly in its width direction especially near edge, the addition contribution from the terminated H atoms may be the other reason.     

Atomic wire oxidation of H-terminated Si(100)-( 2x1): domino reaction via oxidation and H migration

We studied oxidation at a dangling bond (DB) on the H-terminated Si(100) surface by the first-principles calculations. We found that oxidation easily occurs at the exposed DB on the H-terminated Si(100) surface. The dissociated O atoms are chemisorbed at a dimer bond and a back bond, resulting in adjacent H atom migration onto the DB. As a consequence of the alternate oxidation and subsequent H atom migration processes, the atomic wire oxidation is actually found to occur on the H-terminated Si(100) surface at low temperatures without desorbing H atoms, as observed in our scanning tunneling microscopy experiment.     

密度泛函理论研究CO与Nin（n=1—6）团簇的相互作用

采用密度泛函理论对CO吸附在镍团簇表面进行了系统研究.结果表明,Ni_nCO团簇的最低能量结构是在Ni_n团簇最低能量结构的基础上吸附CO生长而成,CO的吸附没有改变Ni_n团簇的结构;CO分子在Ni_n团簇表面发生的是非解离性吸附,与优化的CO键长（0.1138?nm）相比,吸附后C—O键长变长（0.1180—0.1214?nm）,表明吸附后C—O键被削弱,CO分子被活化.自然键轨道分析表明,CO分子只与最近邻的Ni原子发生相互作用;CO分子与Ni原子相互作用的本质是CO分子内的杂化轨道与Ni原子3d, 4s, 4p轨道相互作用的结果. 关键词： nCO团簇')" href="#">Ni_nCO团簇 n团簇')" href="#">Ni_n团簇 平衡结构 电子性质     

Si10团簇成键条件和解离行为的密度泛函紧束缚研究

本研究利用遗传算法和基于密度泛函理论的紧束缚方法相结合的计算方法,研究了Si₁₀团簇的原子堆积结构的成键条件和电子性质.计算结果发现,Si₁₀团簇的最低能稳定结构表现为以一个三棱柱体为基础结构单元,在其3个侧面和一个底面堆积了四个金字塔堆积结构,形成了由四个金字塔包围三棱柱体的类球形结构.原子间成键强烈依赖于团簇中各原子紧邻原子的几何排布情况,原子间交叠电子布居数具有显著的方向性,随着键长增加迅速减小.由团簇中各原子成键条件的分析,可以判断Si₇团簇是Si₁₀团簇最容易形成的解离产物,然后出现的是Si₆团簇.     

WmCn(m+n≤7)团簇的几何结构与稳定性

利用密度泛函理论(DFT)中的杂化密度泛函B3LYP方法在LANL2DZ基组水平上对W_mC_n(m+n≤7)团簇进行几何构型全优化,得出它们的基态结构,并计算基态结构的平均结合能、二阶能量差分、能隙及键级.结果表明:随着W原子个数的增加,团簇的结构由线性转变为平面,再转变为立体结构,其中自旋多重度未超过5;C原子的掺杂增强团簇的稳定性;分析团簇Wiberg键级可知,团簇中W-C键级明显大于W-W和C-C键级,表明W_mC_n(m+n≤7)团簇最容易形成W-C键.     

Tetra-σ bonding adsorption of pyridine on Si(1 0 0)-2 × 1

We studied adsorption of pyridine on Si(1 0 0) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray adsorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, N 1s spectra of pyridine on Si(1 0 0) showed that pyridine is chemisorbed on Si(1 0 0)-2 × 1 through the formation of the tetra-σ-bonded structure with the N atom and three C atoms. NEXAFS was conducted to characterize the adsorption geometry of pyridine on Si(1 0 0). The π* orbital of CC bond showed a good angle dependence in C K-edge NEXAFS spectra, and we were able to estimate the adsorption angle between chemisorbed pyridine of CC bond and the Si(1 0 0) surface using an analytical solution of NEXAFS intensity. We find the coexistence of two different tight bridges with the adsorption angles 42 ± 2° and 45 ± 2° with almost equal abundance.     

纳米硅集团表面电子态的理论研究

研究—Ｈ，—Ｏ或—ＯＨ基吸附于表面的纳米硅集团电子结构的变化情况．选取了几种可能的吸附构型，用定域密度泛函（ＬＤＦ）-集团模型数值自洽求解方法的第一性原理计算，求得优化的吸附位置、相应的电子结构，并分析了有关的光学性质．在全氢饱和的情况下，能隙比硅体的宽，呈明显的量子尺寸效应；部分—Ｈ被—Ｏ原子取代后，在禁带中出现一些“尾态”，这些态部分被占有；若以—ＯＨ基取代—Ｏ，则相应的空尾态被占有，但带隙变化不大．—Ｏ和—ＯＨ吸附时均不呈现明显的量子尺寸效应 关键词：     

Ti$lt;sub$gt;2$lt;/sub$gt;B$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;$lt;/sub$gt;($lt;i$gt;n$lt;/i$gt;=1–10)团簇的结构与稳定性:基于从头算的研究

采用密度泛函理论中的B3LYP方法, 结合从头算的CCSD(T)方法对Ti₂B_n(n=1–10)团簇的稳定性和电子性质进行了研究. 发现两个Ti原子的掺杂导致B_n团簇结构发生了根本性变化. 随着n的增大, Ti₂B_n团簇结构生长非常规律. 所有的最稳定结构都可看成双锥结构, 并且两个Ti原子处在双锥结构的锥顶. 根据二阶差分能量分析, 得出Ti₂B_n(n=1–10)团簇的幻数是6, 7和8. 进一步分析了团簇的Ti原子解离能、B原子解离能以及团簇的电子亲和势和电离势. 这些能量分析表明Ti₂B₆团簇既有良好的热力学稳定性, 又有良好的动力学稳定性. 应用前线轨道理论, 对Ti原子与B₆之间的成键进行了分析, 了解其稳定性的根源. 关键词： 2B_n团簇')" href="#">Ti₂B_n团簇 稳定性 从头计算 电子结构     

Electronic structures of chemisorption systems on Si(111) surface I. Si(111)7 × 7/H,Cl

Electronic structures of chemisorption on Si(111)/H,C1 are investigated by the first principle DV-Xα cluster method. The calculations are carried out for chemisorption on different sites, based on the Si₁₃H₁₅ cluster, and the effect of surface vacancy and buckling on the electronic structure is examined in detail. The present calculation shows that the Si₁₃H₁₅ surface cluster reproduces very well the more sophisticated band calculation for the Si(111) surface. It is concluded that the vacancy model with chemisorbed atoms at appropriate sites is reasonable to interpret the observed UPS of Si(111) 7 × 7/H,C1. The charge transfer between the substrate atom and the adatom depends strongly both on the chemisorption sites and on the electronegativitv difference.     

The effects of hydrogen on the electronic properties of silicon

Silicon (Si) with dangling bonds that are fully passivated by hydrogen (H) is investigated using the well-known non-self-consistent perturbative pseudopotential method (PPM) of M. Jaros. The role of H atoms is studied from a different point of view compared with previous works: (i) the modifications due to these atoms are calculated according to the Si bulk states, (ii) the gap variations with the Si–H bond length, and (iii) the gap variations with the Si/H band line-ups are investigated. This work is an attempt to shed light qualitatively on the role of hydrogen in the electronic properties of porous silicon (PSi).     

Effects of chemisorption of electron acceptor elements on the stability of platinum clusters

The extended Hückel method (EHM) is used here to investigate how the bond strengths of Pt(100) and Pt(111) clusters, containing 9 and 10 atoms, respectively, are affected by the chemisorbed H, O, Cl, or S atoms. Three adsorption sites are considered on each cluster. For most adsorption sites Cl and S weaken all the PtPt bonds, while H and O strengthen the bonds between some Pt atoms and weaken the bonds between some other Pt atoms. The enhanced mobility of the Pt atoms, that occurs upon adsorption of the above elements, is proposed as the mechanism behind the first step in corrosive chemisorption and in the redispersion of supported Pt catalysts. The strong destabilizing effect of S and Cl is attributed to the empty d orbitais of these elements. An attempt is made to explain the poisoning by Sulfur on the basis of long range structural and electronic changes that occur in the Pt clusters upon chemisorption of S.     

Si_4N_4团簇结构与性质的密度泛函理论研究(英文)

用密度泛函理论(DFT)中的杂化密度泛函B3LYP方法,在6-31G(d)的水平上对Si4N4团簇的可能结构进行了几何结构优化和电子结构计算,得到了可能的17个异构体.Si4N4团簇的最稳定结构是有8个Si-N键的平面结构.用自然键轨道(NBO)方法分析了成键性质.计算结果表明,Si-N键中Si原子向N原子有较大的电荷转移,因此Si-N原子间有较强的电相互作用;最强的IR和Raman谱峰分别位于1387.64cm-1和1415.05cm-1处;并计算了Si4N4团簇的最稳定结构的极化率和超极化率.     

团簇ConAgm (n +m =13)表面吸附C2H4的第一性原理研究

基于密度泛函理论的第一性原理计算方法,本文对ConAgm(n+m=13)团簇的几何结构进行优化后,研究了C2H4分子在这类团簇的表面吸附行为,讨论了团簇的平均结合能、二阶能量差分、稳定性、DOS以及吸附前后键长的变化情况。结果表明,C2H4在团簇top位的吸附主要为物理吸附,而在face位和bridge位的吸附主要为化学吸附。吸附后,C2H4@Ag13的稳定性高于C2H4@Co13,且在face位吸附时C2H4@Co2Ag11的结构最为稳定。随着Co原子数的增加,团簇中原子间成键能力减弱,而d电子轨道则呈现出较强的相互作用,并导致其向能量相对高处发生转移     

H_2在Al_nCr(n=1-7)团簇上吸附和解离的密度泛函研究

采用密度泛函理论中的B3LYP方法研究了H2在AlnCr(n=1-7)团簇上的吸附和解离.结果表明:AlnCr团簇结构与Aln+1团簇结构相似;物理吸附是H2以侧向的形式吸附在Cr原子上,H-H键长略微增长,H2的振动频率发生了红移;除了n=5外,其它AlnCr H2团簇的最稳定结构均是AlnCr团簇的最稳定结构与两个氢原子成键而成;AlnCr团簇向H原子转移了电荷;AlnCr H2团簇的平均结合能,垂直电离势和能隙均大于AlnCr团簇的,即AlnCr H2团簇比AlnCr团簇更稳定;Al7Cr对H2的化学吸附表现出较强的惰性,而AlnCr H2(n=1,2,6)则表现出较强的化学活性;由化学反应路径跟踪可知,通过改变AlnCr团簇中Al原子的个数可以调节H2的物理化学吸附行为.     

H2在AlnCr(n=1-7)团簇上吸附和解离的密度泛函研究

采用用密度泛函理论中的B3LYP方法研究了H2在AlnCr(n=1-7)团簇上的吸附和解离。结果表明：AlnCr团簇结构与Aln+1团簇结构相似;物理吸附是H2是以侧向的形式吸附在Cr原子上,H-H键长略微增长,H2的振动频率发生了红移;除了n=5外,其它AlnCrH2团簇的最稳定结构均是AlnCr团簇的最稳定结构与两个氢原子成键而成;AlnCr团簇向H原子转移了电荷;AlnCrH2团簇的平均结合能,垂直电离势和能隙均大于AlnCr团簇的,即AlnCrH2团簇比AlnCr团簇更稳定;Al7Cr对H2的化学吸附表现出较强的惰性,而AlnCrH2(n=1,2,6)则表现出较强的化学活性;由化学反应路径跟踪可知,通过改变AlnCr团簇中Al原子的个数可以调节H2的物理化学吸附行为。     

Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)

We have studied single Si dangling bonds on the Si(0 0 1) surface using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. The Si dangling bonds are created by the chemisorption of single hydrogen atoms forming a Si-Si-H hemihydride. At room temperature, the hemihydride induces static buckling on adjacent Si-Si dimers. In the STM measurements, we observe that the orientation of the static buckling pattern can be reversed with tip-sample bias and influenced by the substrate doping. Our DFT calculations yield a correlation between the electron occupancy of the hemihydride Si dangling bond and the buckling orientation around it.     

A hybrid functional first-principles study on the band structure of non-strained Ge_(1-x)Sn_x alloys

Using hybrid-functional first-principles calculation combined with the supercell method and band unfolding technique we investigate the band structure of non-strained Ge_(1-x)Sn_x alloys with various Sn concentrations. The calculations show that at the Sn concentration of ～ 3.1 mol% the Ge Sn alloy presents a direct band gap. The variation of the band structure are ascribed to the weaker electro-negativity of Sn atoms and a slight charge transfer from Sn atoms to Ge atoms.     

Photoelectron diffraction imaging for C2H2 and C2H4 chemisorbed on Si(100) reveals a new bonding configuration

A new adsorption site for adsorbed acetylene on Si(100) is observed by photoelectron imaging based on the holographic principle. The diffraction effects in the carbon 1s angle-resolved photoemission are inverted (including the small-cone method) to obtain an image of the atom's neighboring carbon. The chemisorbed acetylene molecule is bonded to four silicon surface atoms. In contrast to the C2H2 case, the image for adsorbed C2H4 shows it bonded to two Si surface atoms.