Electrical Conductivity of Nonideal Quasi-Metallic Plasmas

Electrical conductivity formulas are derived from first principles for fully ionized nonideal plasmas. The theory is applicable to an electron-ion system with a 1) Maxwell electron distribution with an arbitrary interaction parameter ? = Ze2n1/3/KT (ratio of the mean coulomb interaction and thermal energies) and 2) Fermi electron distribution with an interaction parameter ? = Ze2n1/3h?2m-1 n2/3 (ratio of the coulomb interaction and Fermi energies). The momentum relaxation time of the electrons in the plasma is calculated based on plane electron wave functions interacting with the continuum oscillations (plasma waves) through a shielded coulomb potential Us(r) = esee exp (-r/?s)/r, which takes into account both electron-ion interactions (s = i) and electron-electron interactions (s = e). It is shown that the resulting conductivity formulas are applicable to higher densities, for which the ideal plasma conductivity theory breaks down because the Debye radius loses its physical meaning as a shielding length and upper impact parameter. The conductivity obtained for classical plasma is of the form ?c = ?c*(KT)3/2/m1/2e2 and agrees with the ideal plasma conductivity formula with respect to the temperature and density dependence for ?/Z ? 0, but its magnitude is significantly reduced as ?/Z increases. For quantum plasmas, the conductivity obtained is of the form ?Q = ?Q*h3n/m2Ze2, which shows that the degenerate plasma behaves like a low-temperature metal.     

Production of Negative Ion-Rich Plasma by Electron Attachment in Low Pressure Gases

The scope of this research is to investigate experimentally electron (ne), negative ion (n-) and positive ion (n+) densities characterizing laboratory negative ion-rich plasmas, produced by electron attachment in N2O3, O2 and I2, and to find out the factors limiting the achievement of very low ? (relative electron density ? = ne/n+). These plasmas may be of great interest for the production of negative ion beams. It is shown experimentally that it is possible to produce plasmas with a high proportion of negative ions (n-/n+ ? 90 %) and a low proportion of electrons, at densities n+ up to 1011 cm-3. The comparison of mass spectrometric data with kinetic calculations leads to the conclusion that the loss of negative ions by diffusion limits the lowest ? achieved at low ion density (n+ < 109 cm-3). At higher ion density, mutual neutralization seems to control the ? values. A general limitation seems to exist for the lowest ? attainable in small plasmas produced by electron attachment : the confinement of negative ions in a plasma is due to the presence of electrons and therefore this confinement becomes inefficient when ? drops to values as low as 10-3.     

Ortho-para H₂ conversion by proton exchange at low temperature: an accurate quantum mechanical study

We report extensive, accurate fully quantum, time-independent calculations of cross sections at low collision energies, and rate coefficients at low temperatures for the H? + H?(v = 0, j) → H? + H?(v = 0, j') reaction. Different transitions are considered, especially the ortho-para conversion (j = 1 → j' = 0) which is of key importance in astrophysics. This conversion process appears to be very efficient and dominant at low temperature, with a rate coefficient of 4.15 × 10?1? cm3 molecule?1 s?1 at 10 K. The quantum mechanical results are also compared with statistical quantum predictions and the reaction is found to be statistical in the low temperature regime (T < 100 K).     

Scaling of the magnetoconductivity of silicon MOSFETs: evidence for a quantum phase transition in two dimensions

For a broad range of electron densities n and temperatures T, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFETs can be scaled onto a universal curve with a single parameter H(sigma)(n,T), where H(sigma) obeys the empirical relation H(sigma) = A(n) [Delta(n)(2)+T2](1/2). The characteristic energy k(B)Delta associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n(0), signaling the approach to a zero-temperature quantum phase transition. We show that H(sigma) = AT for densities near n(0).     

电场下GaAs/Ga1-xAlxAs量子阱中的子带和激子

本文利用有限势垒模型,研究电场对GaAs/Ga_1-xAl_xAs量子阱中子带和激子的影响。对阱宽为105?的GaAs/Ga_0.66Al_0.34As量子阱,电场由0—1.2×10⁵V/cm,我们计算了电子和空穴的子带以及激子的结合能。基于上述计算结果,所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。 关键词：     

Design principles and coupling mechanisms in the 2D quantum well topological insulator HgTe/CdTe

We present atomistic band structure calculations revealing a different mechanism than recently surmised via k · p calculations about the evolution of the topological state (TS) in HgTe/CdTe. We show that 2D interface (not 1D edge) TSs are possible. We find that the transitions from a topological insulator at critical HgTe thickness of n = 23 ML (6.453 [corrected] ?) to a normal insulator at smaller n is due to the crossing between two interface-localized states: one derived from the S-like Γ?(c) and one derived from the P-like Γ?(v) light hole, not because of the crossing of an interface state and an extended quantum well state. These atomistic calculations suggest that a 2D TS can exist in a 2D system, even without truncating its symmetry to 1D, thus explaining the otherwise surprising similarity between the 2D dispersion curves of the TS in HgTe/CdTe with those of the TS in 3D bulk materials such as Bi?Se?.     

Transition parameters of Li-like ions(Z = 7–11) in dense plasmas

The energy levels, transition energies, transition probabilities, weighted oscillator strengths, and line strengths of Lilike ions(Z = 7–11) in dense plasmas are investigated in this work. The relativistic effects and electron correlation effects are described by the MCDHF method. The ion sphere model is applied to include the dense plasma screening effect. The ground configuration 1 s~22 s and the excited 1 s~22 p, 1 s~23 l(l = 0–2) are considered. The configuration sets are enlarged until n = 7 where the calculated energy levels have converged. The critical free electron densities of 1 s~23 d states are estimated.Except for 1 s~23 s–1 s~23 p transitions, the transition energies for Δn = 0 increase, and for Δn ≠ 0 decrease with increasing free electron densities. For 1 s~23 s–1 s~23 p transitions, the spectra show blue-shift at lower free electron densities and red-shift at higher free electron densities, and the energy level crossing phenomens are observed at higher free electron densities.     

(GaAs)n(n=1-4)原子链电子输运性质的理论计算

本文利用密度泛函理论结合非平衡格林函数的方法, 对 (GaAs)_n(n=1-4)直线原子链与Au(100)-3×3两半无限电极耦合构成Au-(GaAs)_n-Au纳米结点的电子输运性质进行了第一性原理计算. 在各结点拉伸过程中, 对其结构进行了优化, 得到各结点稳定平衡结构时Ga-As的平均键长分别为0.220, 0.224, 0.223, 0.223 nm, 平衡电导分别为2.328G₀, 1.167G₀, 0.639G₀, 1.237G₀; 通过对结点投影态密度的计算, 发现电子传输主要是通过Ga, As原子中p_x与p_y电子轨道相互作用形成的π键进行的. 在0-2 V的电压范围内, 对于(GaAs)_n(n=1-3)的原子链的电流随电压增大而增大, I-V曲线呈线性关系, 表现出类似金属导电行为; 对于(GaAs)₄原子链在0.6-0.7 V, 0.8-0.9 V的电压范围内却存在负微分电阻现象.     

Hybridization gap-open in CeIn3

Reflectivity spectra of CeIn₃ are measured at 7, 30, 50, 100, 150, 200 and 300 K in wild energy regions from 6 meV to 30 eV. Optical conductivity spectra are obtained from a Kramers–Kronig’ relation. A hump in the optical conductivity σ₁ is observed at about 500 cm⁻¹ below 100 K, resulting from strong hybridization between conduction electrons and Ce 4f electronic states. The low frequency plasmon indicating the existence of heavy particles is also observed below coherence temperature T^*  100 K.     

铯原子nP_(3/2)(n=70—94)里德伯态的紫外单光子激发及量子亏损测量

基于成熟的光纤激光器、光纤放大器及高效激光频率转换技术,我们在实验中研制了一套瓦级输出的窄线宽连续波单频可调谐318.6 nm紫外激光系统,并在室温铯原子气室中实现了6S_(1/2)—nP_(3/2)(n=70—94)单光子跃迁里德伯激发.借助由铯原子6S_(1/2)(F=4)基态、6P_(3/2)(F′=5)激发态和nP_(3/2)(n=70—94)里德伯态构成的V型三能级系统,通过频率锁定于铯原子6S_(1/2)(F=4)—6P_(3/2)(F′=5)超精细跃迁的852.3 nm探测光束的吸收减弱信号获得了里德伯态的信息,并利用高精度波长计测量了铯原子nP_(3/2)(n=70—94)里德伯态的量子亏损值.经过与理论计算值的变化趋势进行对比,我们认为由于原子气室的里德伯屏蔽效应并不能完全屏蔽外部直流电场,铯原子气室内存在残余的直流电场,影响了对里德伯态的量子亏损值的实验测量.利用残余直流电场的Stark效应理论模型及其与有效主量子数n*的依赖关系,对铯原子里德伯态的量子亏损实验测量值进行了修正.修正后的铯原子nP_(3/2)(n=70—94)态量子亏损测量值为3.5591±0.0007,与理论计算值相吻合.     

长程铯里德堡分子的势能曲线

本文介绍了半经典近似下的低能电子-原子散射理论, 引入贋势描述里德堡电子与基态原子的相互作用, 数值计算了铯原子nS (n=30-60)里德堡态与6S基态原子形成的长程里德堡分子的势能曲线. 并对最外层势阱进行分析, 获得长程里德堡分子的势阱深度、平衡距离与主量子数n的关系. 为实验制备里德堡分子并进一步分析其性质提供理论依据. 里德堡分子对外界非常敏感, 可用于微弱信号的检测.     

Energies of 1s2ng and 1s2nh (n = 5, 6, 7, and 8) States for Lithium Isoelectronic Sequence

The nonrelativistic energies for lithium isoelectronic sequence 1s²ng and 1s²nh (n=5, 6, 7, and 8) states from Z=3 to 8 are calculated by using a full core plus correlation (FCPC) method with multiconfiguration interaction wave functions. Relativistic and mass-polarization effects on the energy are evaluated as the first-order perturbation theory. Our predicted excitation energies are compared with previous experimental results in the literature.     

Modeling single-frequency laser-plasma acceleration usingparticle-in-cell simulations: the physics of beam breakup

We investigate electron acceleration from space-charge waves driven by single-frequency lasers using a fully explicit particle-in-cell (PIC) model. The two dimensional (2-D) simulations model ~100 fs pulses at densities near n=4×10¹⁹ cm^-3 for 1-μm lasers. The pulses are found to break up due to a combination of longitudinal and transverse bunching of the laser intensity via Raman forward scattering type instabilities. The ponderomotive force of these intensity modulations generates large amplitude plasma waves. Large numbers of self-trapped electrons and multiple Raman forward scattering satellites are observed. The relevance of these simulations to experiments is discussed     

原子轨道强耦合方法研究He2+-H-碰撞的电荷转移过程

应用双中心原子轨道强耦合方法研究He²⁺-H^-碰撞的单次电荷转移过程.计算中,对入射粒子He²⁺,包含n=1~7的所有束缚态,计算的能量本征值与NIST标准数据在百分之几的精度内符合很好;对靶H^-,包括一个束缚态1s和五个连续态ns(n=2~6),束缚态能量与他人理论结果一致.在4~400 keV的入射粒子能量范围,计算单电子俘获过程的总截面及到各个壳层上的态选择截面.发现在较低的入射粒子能量,电子主要俘获到He⁺离子主量子数n=3~5的壳层,高能区俘获到n=2的壳层为主;对同一主量子数n,在低能区俘获到高角动量态(l=n-1,n-2)的电荷转移截面相对较大,在高能区主要俘获到l=1的p壳层.同时还计算入射粒子能量分别为4 keV和400 keV时,电子俘获到激发态辐射退激发产生的电荷转移发射光谱,并发现cascade效应的影响很大.     

Doppler-shifted cyclotron resonance in thin metal films

The velocities of electrons contained in a thin slab are quantized because the component of momentum transverse to the slab faces is quantized. For a free electron gas the transverse velocity is given by |v_H| = l(/m) (π/d) where l = 1, 2, 3, …. If a magnetic field is applied normal to the slab, the wave number and frequency dependent conductivity consists of a series of resonant terms. The resonances occur at the Doppler-shifted cyclotron resonance frequencies |ω_c| = ω ± p(/m) (π/d)² where l = 1, 2, 3, …. It is shown that these resonances in the conductivity result in an absorption in pure thin films at low temperatures which is periodic in magnetic field. The semi-classical expression for the absorption is in substantial agreement with the corresponding quantum calculation, and has the virtue that it may be readily extended to non-spherical Fermi surfaces.     

A thermodynamic and electrical conductivity study of nonstoichiometric cerium dioxide

Thermodynamic and dc electrical conductivity measurements were performed on nonstoichiometric CeO_2−x to characterize the electrical behavior and defect structure in the vicinity of the n to p transition. Using the mass action approach, activation energies of 2.57, 1.15 and 0.63 eV were obtained for the electron, hole and ionic partial conductivities respectively (600–1000°C, 1<P_o2<10⁻⁴ atm). Thermodynamic measurements of 99.99%CeO_2-x by electrochemical coulometric titration yielded expressions for point defect concentrations per cm³ and nonstoichiometry in the impurity dominated region at 800°C as follows:

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. Thermodynamic constant composition measurements revealed a decrease in the partial molar enthalpy (from - 10 eV) with decreasing stoichiometry for x<10^−2.8. This decrease is attributed to defect reaction involving both holes and electrons.     

类锂离子(Z=11～20) 1s22s-1s23p的跃迁能和振子强度

用全实加关联方法计算类锂离子(Z=11～20)偶极跃迁1s22s*"2S-1s23p*"2P1/2,3/2的跃迁能.非相对论能量用Rayleigh-Ritz变分法确定,相对论修正和质量极化效应用微扰论计算,还估算了来自量子电动力学效应的修正.得到的计算结果与现有的实验数据符合得很好,我们关于氯的类锂离子(Z=17)1s23p态的精细结构劈裂的计算结果揭示,相应的实验数据明显偏离等电子序列的物理规律.还算了1s22s-1s23p偶极跃迁的振子强度.     

Fractional quantum Hall States of Dirac electrons in graphene

We have investigated the fractional quantum Hall states of Dirac electrons in a graphene layer in different Landau levels. The relativistic nature of the energy dispersion relation of electrons in graphene significantly modifies the interelectron interactions. This results in a specific dependence of the ground state energy and the energy gaps for electrons on the Landau-level index. For the valley-polarized states, i.e., at nu=1/m, m being an odd integer, the energy gaps have the largest values in the n=1 Landau level. For the valley-unpolarized states, e.g., for the 2/3 state, the energy gaps are suppressed for n=1 as compared to those at n=0. For both n=1 and n=0, the ground state of the 2/3 system is fully valley-unpolarized.     

Oscillator strengths for 2 ^2P-n ^2D transitions of lithium-like systems with Z=11 to 20

The dipole-length, velocity and acceleration absorption oscillator strengths for the 1s^22p－1s^2nd(3≤n≤9) transitions of the lithium-like systems with Z=11 to 20 are calculated using the energies and the multiconfiguration interaction wavefunctions obtained from a full core plus correlation method. The agreement between the f-values calculated from the length, velocity and acceleration formulae is excellent. Our results agree closely with the experimental data available in the literature. Combining these discrete oscillator strengths with the single-channel quantum defect theory, the discrete oscillator strengths for the transitions from 1s^22p state to highly excited states (n≥10) and the oscillator strength densities corresponding to the bound-free transitions are obtained.     

Numerical calculation of the neutral fermion gap at the ν=5/2 fractional quantum Hall state

We present the first numerical computation of the neutral fermion gap, Δ(F), in the ν=5/2 quantum Hall state, which is analogous to the energy gap for a Bogoliubov-de Gennes quasiparticle in a superconductor. We find Δ(F)≈0.027e(2)/ε?(0), comparable to the charge gap. We also deduce an effective Fermi velocity v(F) for neutral fermions from the low-energy spectra for odd numbers of electrons, and thereby obtain a correlation length ξ(F)=v(F)/Δ(F)≈1.3?(0). We comment on implications for experiments, topological quantum information processing, and electronic mechanisms of superconductivity.