Electric field modulated Raman scattering in CdS

We have observed electric field modulated Raman scattering by A₁ LO phonons in CdS. The field induced scattering is observed with a geometry in which Raman scattering by A₁ LO phonons is normally allowed. The interference of the field induced and allowed terms in the transition susceptibility leads to a modulated Raman scattering intensity proportional to the applied field. This is contrasted with data previously reported on field induced Raman scattering by E₁ LO phonons in a configuration in which the Raman scattering is normally forbidden and in which there is no interference between linear wavevector dependent and field induced terms in the transition susceptibility. Electric field effects on Raman scattering by TO phonons and by 2 LO phonons is also discussed.     

Hysteretic microwave cyclotron resonance of a laterally confined 2 DEG

A hysteretic cyclotron resonance (CR) is discovered in a laterally confined high mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures. The hysteresis and switching phenomena are observed in microwave radiation (36 GHz) transmission at temperature 1.8–25 K. It is found that the hysteresis is accompanied by long-lived, microwave-induced changes of the 2DEG density. These density changes is attributed to a modification of electron vertical transport processes in heterostructures under the microwave heating of the 2DEG. A phenomenological model based on the 2DEG density-dependent CR, describes reasonably the main experimental findings.     

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

We report on photoluminescence and Raman scattering performed at low temperature (T =  10 K) on GaAs/Al_0.3Ga_0.7As quantum-well wires with effective wire widths ofL =  100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ο_L10 =  285.6 cm⁻¹forL =  11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al_0.3Ga_0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques.     

Low frequency Raman scattering from acoustic phonons confined in ZnO nanoparticles

We report here the first observation of the low frequency Raman scattering from acoustic phonons in semiconducting zinc oxide (ZnO) nanoparticles without embedding in any solid matrix. ZnO nanoparticles (size 5-10 nm) with nearly spherical shape have been synthesized using a chemical route. A shift in the phonon peaks toward higher frequencies along with broadening was observed with a decrease in particle size. The size dependence of the acoustic phonons in ZnO nanoparticles is explained using Lamb's theory that predicts the vibrational frequencies of a homogeneous elastic body of spherical shape. Our results show that the observed low frequency Raman scattering originates from the spherical (l = 0) and quadrupolar vibrations (l = 2) of the spheroidal mode due to the confinement of acoustic vibrations in ZnO nanoparticles.     

离子注入GaN的拉曼散射研究

研究了离子注入前后GaN的拉曼散射光谱,特别是其中几个在各种离子注入后都存在的拉曼散射峰,如298,362和661cm-1峰的性质,峰值强度随注入元素原子量、注入剂量和退火温度的变化关系.上述三个拉曼散射峰的强度都随注入元素原子量的增加而降低.当注入剂量增大时,362和661cm-1峰值强度减少,而298cm-1峰值强度却增大.随退火温度的升高,这三个拉曼散射峰的强度先增加后降低.对所观察到的实验现象和这三个峰的起源进行了分析和讨论. 关键词： GaN 离子注入 拉曼散射 局域振动     

Raman scattering in organic superconductor (BEDT-TTF)2 I 3: A model study

An interpretation of the Raman data of the organic superconductor (BEDT-TTF)₂ I ₃ is given, based on the modified charge bag model for superconductivity. The Raman intensities are calculated at zero temperature both in the normal as well as the superconducting (SC) states. The scattering due to charge carriers as well as the phonons are taken into account. The results show a constant intensity background which reduces on going from the normal to the superconducting state. Similarly, the loss of intensity, broadening and softening of the frequency of a low lying phonon on going from the normal to the SC state are predicted. All these features are in qualitative agreement with the observed Raman data.     

Raman scattering study of delafossite magnetoelectric multiferroic compounds: CuFeO2 and CuCrO2

Ultrasonic velocity measurements on the magnetoelectric multiferroic compound CuFeO(2) reveal that the antiferromagnetic transition observed at T(N1) = 14 K might be induced by an R3m --> pseudoproper ferroelastic transition. In that case, the group theory states that the order parameter associated with the structural transition must belong to a two-dimensional irreducible representation E(g) (x(2) - y(2), xy). Since this type of transition can be driven by a Raman E(g) mode, we performed Raman scattering measurements on CuFeO(2) between 5 and 290 K. Considering that the isostructural multiferroic compound CuCrO(2) might show similar structural deformations at the antiferromagnetic transition T(N1) = 24.3 K, Raman measurements have also been performed for comparison. At ambient temperature, the Raman modes in CuFeO(2) are observed at ω(E(g)) = 352 cm(-1) and ω(A(1g)) = 692 cm(-1), while these modes are detected at ω(E(g)) = 457 cm(-1) and ω(A(1g)) = 709 cm(-1) in CuCrO(2). The analysis of the temperature dependence of the modes in both compounds shows that the frequencies of all modes increase with decreasing temperature. This typical behavior is attributed to anharmonic phonon-phonon interactions. These results clearly indicate that none of the Raman active modes observed in CuFeO(2) and CuCrO(2) drive the pseudoproper ferroelastic transitions observed at the Néel temperature T(N1). Finally, a broad band at about 550 cm(-1) observed in the magnetoelectric phase of CuCrO(2) below T(N2) could be associated with magnons.     

Raman scattering from confined LO phonons and dispersion relation in GaAs/AlAs superlattices

The Raman scattering from both GaAs and AlAs confined LO phonons for several GaAs/AlAs superlattices is presented. The GaAs confined LO phonons were observed for two narrow GaAs layer samples at room temperature. The frequencies of observed phonons fit fairly well with the theoretical dispersion curves.     

Phonons in SiAs: Raman scattering study and DFT calculations

We present experimental Raman scattering results on single‐crystal silicon monoarsenide (SiAs). Based on a comparison between Raman measurements and first‐principles density functional theory calculations, we found evidence that SiAs will occur in a monoclinic crystal structure rather than an orthorhombic one as has been discussed in the literature. Further, we provide a detailed discussion of the vibrational properties of the monoclinic structure. Copyright © 2011 John Wiley & Sons, Ltd.     

光纤中受激拉曼散射连续谱研究

我们在实验中研究了自相位调制效应和受激四光子混频效应对受激拉曼散射光谱的影响。在较强的泵浦光和适当的入射条件下,得到九阶受激拉曼散射的级联 Stokes 连续平滑谱带,带宽3500cm~(-1),其强度可与530nm 泵浦光强相比拟。     

Hyper‐Raman and Raman scattering in paratellurite TeO2

Raman spectra of the tetragonal structure of paratellurite TeO₂ have been revisited avoiding anomalous polarization‐selection‐rules violations previously observed and due to optical activity. We present a complementary hyper‐Raman scattering study of paratellurite. Wavenumber and symmetry assignments are given for all expected 21 Raman active optical branches, except one LO component (out of the eight expected TO–LO pairs) of the polar doublet E modes. Also, the four expected hyper‐Raman active A₂ (TO) modes have been observed. Moreover, we have observed a strong Kleinman‐disallowed hyper‐Rayleigh signal, which is tentatively assigned as a first evidence of hyper‐Rayleigh optical activity. Copyright © 2013 John Wiley & Sons, Ltd.     

GaN薄膜拉曼散射光谱的研究

利用拉曼散射光谱对在SiC衬底上采用MOCVD异质外延的未故意掺杂GaN薄膜特性进行研究发现E2模式向频率低的方向漂移表明在GaN薄膜中存在张力,由于SiC衬底不平整度增加引起更多位错的出现,从而引起拉曼谱中E2模式的加宽,因此通过选择平整度较好的衬底可以减小缺陷密度,提高薄膜的质量,此外A1(LO)模式的出现与强度可以用来表征未掺杂GaN的薄膜质量。     

Raman scattering from a two-dimensional electron gas in a weakly and periodically modulated magnetic field

An analysis of light scattering from a two-dimensional electron gas (2DEG) subject to aweak periodicmagnetic modulation of strengthB_mand to a perpendicular uniform magnetic fieldBof arbitrary strength is presented. Raman spectra are calculated for (i) electron inter-Landau-level transitions, which result in a Raman shift ∼  2ω_c, and (ii) inter-Landau-level collective electron excitations at a hybridized magnetoplasmon frequency and at anewlow-frequency, intra-Landau-level plasmon mode induced by the modulation. The dependence of the Raman cross sections on the strength ofBandB_mis assessed. The effect of a weakB_mon the Raman spectrum is similar to that of a weak electric modulation but the signals from the magnetically modulated 2DEG are much stronger. The combined effect of the electric and magnetic modulations is also considered.     

Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

Structural details of the amorphous binary GeTe and ternary Ge₂Sb₂Te₅ (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe_4−nGe_n (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb₂T₃ component in Raman scattering; reasons about this explanation, as well as for the lack of any Te–Te bonds are briefly described.     

A surface-enhanced Raman scattering study of CTAB adsorption on copper

Surface-enhanced Raman spectroscopy (SERS) has been used to study, in situ, the adsorption of cetyltrimethylammonium bromide (CTAB) on copper. The data obtained allow the determination of CTAB's adsorption rate from aqueous solution and are consistent with physisorption or weak chemisorption via the quaternary ammonium group. The use of “surface selection rules” to derive orientation information is examined.