An attempt to design long-wavelength (>2 μm) InP-based GaInNAs diode lasers

In the present paper, anticipated performance characteristics of various InP-based GaInNAs quantum-well (QW) active regions are determined with the aid of our comprehensive computer model for various sets of parameters (temperature, carrier concentration, QW thickness). It is evident from this analysis that the compressively strained InP-based Ga_0.12In_0.88N_0.02As_0.98/Ga_0.275In_0.725As_0.6P_0.4 QW structure may offer expected lasing emission. Its maximal optical gain of over 2150 cm^?1 has been determined at room temperature for the wavelength of about 2815 nm for the QW thickness of 10 nm and the carrier concentration of 5×10¹⁸ cm^?3. Therefore, the above InP-based QW structure may be successfully applied in compact semiconductor laser sources of the desired radiation of wavelengths longer at room temperature than even 2800 nm. Similar GaAs-based devices emit radiation of distinctly shorter wavelengths, whereas GaSb-based ones avail themselves of more expensive substrates as well as exhibit lower thermal conductivities and worse carrier confinements.     

Intersubband absorption in highly photoexcited semiconductor quantum wells

Transient mid infrared (MIR) absorption spectroscopy is used to investigate transitions between higher electronic subbands in semiconductor quantum well (QW) structures after interband photoexcitation with intense picosecond pulses in the visible spectral range. Our investigation focuses on the e₂–e₃ intersubband transition in an asymmetric undoped GaAs/AlGaAs QW structure. At an injected nonequilibrium carrier density of 1×10¹³ cm⁻²/QW, an e₂–e₃ absorption band at 99 meV with a spectral width of 5 meV is found. For a higher density studied, 3×10¹³ cm⁻²/QW, the band is broadened and blueshifted by 30 meV. Intersubband absorption signals are distinguished from free-carrier absorption signals in the MIR by their characteristic time behavior.     

Magnetic field-induced charge transfer to a GaAs/(Ga,Al)As quantum well interface studied by C(e,A0i) photoluminescence

The photoluminescence (PL) from a 300 Å GaAs((Ga,Al)As quantum well (QW) has been studied for a range of excitation powers, in magnetic fields up to 16 T applied both perpendicular to and in the plane of the QW. Particular attention was paid to the intensity of the (e,A₀ⁱ) transition due to Carbon acceptors located at one interface of the QW, in the presence of in-plane fields. The low power in-plane field dependence of the PL is a competition between two effects. At fields up to 12 T charge transfer is observed to and from the interface of the QW, resulting in an increase and subsequent decrease of the acceptor PL intensity. For field values exceeding 12 T the acceptor PL intensity is found to increase again. Whereas the first effect is well described by a composite oscillator model, the latter is suggested to be due to the decreased efficiency of electronic traps, located at the QW interface, for in-plane magnetic fields. These suggestions are confirmed by the excitation power dependence of the PL intensity for in-plane fields.     

Optical properties of GaInNAsSb/GaAs/GaAs1−xNx (x ≈ 10%) saturable absorber quantum wells

We study the effect of the GaAsN narrow QWs on the optical properties of the GaInNAsSb/GaAs QWs using photoluminescence spectroscopy. A drastic effect of the N-rich layers on the QW photoluminesecnec (PL) intensity was observed with a strong influence of the spacer thickness. In the PL spectra a broad band caused by excitonic transitions related with N-related clusters in GaAs barriers is found. Based on calculations from experimental data, we have identified the low QW peak energy to the E₁-H₁ transition using the shear deformation potentials report Δp/p = 0.24.     

Variations in the confining potential of doped AlGaAs/GaAs quantum wells with the photon energy of excitation

A series of doped GaAs/AlGaAs single quantum well samples has been investigated using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The samples are of 100 Å well width and are doped in the central 50 Å with Si in the range 5×10⁸ to 2×10¹² cm⁻². A strong dependence of the optical spectra on the photon energy of excitation is observed. This dependence is interpreted in terms of a charge transfer process between the AlGaAs barrier and the quantum well (QW), which determines the charge and potential distribution in the QW.     

Self-consistent inhomogeneity of quantum wells in II–VI semiconductors

An X-ray diffraction method that uses a slightly diverging (3′) beam and maximally attainable diffraction angles ? _B (as large as 77°) was developed to study quantum wells (QWs) with widths of 5–8 nm separated by wide (100–220 nm) barrier layers. The advantage of this method compared to the use of a parallel beam is an increase by two orders of magnitude in the intensity of the beam incident on the sample and an increase in the probability of diffraction for all QWs as a unified single crystal. It is found that the growth on GaAs substrates misoriented by 10° from the (001) plane in the [111]_II direction brings about monoclinization of crystal lattices of the QW layers and barrier layers in opposite directions. Inhomogeneity of composition over the thickness of each well is observed. In the case of growth of a ZnSe/ZnMgSSe structure in which the layers have a crystal-lattice period close to the lattice period of the GaAs substrate, the QWs are inhomogeneously doped with elements from the composition of the barrier layers. The inhomogeneity of QW composition observed in the growth of mismatched layers in ZnCdSe/ZnSSe and ZnCdS/ZnSSe structures is caused by the fact that mismatch between the lattice parameters of QWs and barriers stimulates the growth of self-consistent compositions; this occurs due to a decrease in the Cd concentration in the Zn_1?x Cd _x Se QW in the initial stages of growth compared to the Cd concentration in the flow of gases and an increase in the Zn concentration in the Cd_1?x Zn _x S QW at small values of x up to the concentration matching GaAs (x = 0.4). The mismatch stresses are partially relaxed via dislocations with the (111)_II glide planes, as a result of which is observed the combination of rotation of the crystal planes of the layers and QW around the [1\(\overline 1 \)0] axis and almost cylindrical bending of the entire sample around the perpendicular [110] axis. Mismatch between lattice parameters of the ZnMgSSe barrier layers and the substrate brings about decomposition of these layers into two phases; this decomposition is caused by thermodynamic instability of the alloy.     

Optical properties of narrow high quality GaAs/AlGaAs quantum wells grown by MOVPE

We report optical characterization of high quality quantum well (QW) structures grown by metal-organic vapour-phase epitaxy (MOVPE). Thin QW layers of GaAs of thicknesses between 20 Å and 80 Å inserted between Al_0.36Ga_0.64 As confining layers as well as nominally 20 Å QW's in Al_xGa_1−xAs with varying x have been studied. Exciton confinement energies exceeding 250 meV and a FWHM of 6 meV for the thinnest QW have been observed. The photoluminescence (PL) data allows the observation of monolayer fluctuations in the QW widths and indicates an interface abruptness of about one atomic layer. Photoluminescence excitation spectroscopy allows electronic excited states to be seen.     

Optical properties of Cd<Subscript>0.6</Subscript>Mn<Subscript>0.4</Subscript>Te/Cd<Subscript>0.5</Subscript>Mg<Subscript>0.5</Subscript>Te quantum-well structures

Emission spectra of three Cd_0.6Mn_0.4Te/Cd_0.5Mg_0.5Te superlattices with Cd_0.6Mn_0.4Te quantum-well (QW) widths of 7, 13, and 26 monolayers, respectively, and the same thickness (46 monolayers) of the Cd_0.5Mg_0.5Te barriers have been studied. The QW width affects the shape and spectral position of the Mn²⁺ intracenter luminescence (IL) band as a result of the crystal field being dependent on the position of the manganese ion with respect to the interface. Measured in identical experimental conditions, the exciton luminescence as compared to the IL is substantially higher in intensity in a QW than in a bulk CdMnTe crystal. Some samples of superlattices and bulk crystals exhibit, in addition to the conventional IL band near 2.0 eV, a weaker band at about 1.45 eV. This band apparently derives from intracenter transitions in the Mn²⁺ ions in the regions where the crystal lattice has the rock-salt rather than the conventional zinc blende structure.     

Hole mobility and remote scattering in strained InGaSb quantum well MOSFET channels with Al2O3 oxide

Hall mobility and major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in‐situ grown Al₂O₃ gate oxide are analyzed as a function of sheet hole density, top‐barrier thickness and temperature. Mobility dependence on Al_0.8Ga_0.2Sb top‐barrier thickness shows that the relative contribution of interface‐related scattering is as low as ～30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top‐barrier thickness demonstrates mobility of 980 cm²/Vs giving sheet resistance of 4.3 kΩ/sq, very close to the minimum QW resistance in the bulk. The mobility–temperature dependences indicate that the interface‐related scattering is dominated by remote Coulomb scattering at hole densities <1 × 10¹² cm^–2. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Two-step decoupling of excitonic states in a biperiodic GaAs/AlAs short period superlattice under electric fields

By low temperature photocurrent spectroscopy, we have investigated electric field dependence of excitonic states in a biperiodic GaAs/AlAs short-period superlattice which consists of a 20-period of GaAs-well(L_Z) / AlAs-barrier1(L_B¹) / GaAs-well(L_Z) / AlAs-barrier2(L_B²) (= 3.2nm / 0.45nm / 3.2nm / 0.9nm). Evidence is given for a two-step decoupling mechanism at low (< 10⁵V/cm) and high (> 10⁵V/cm) field regimes, which is derived from the successive decoupling of the superlattice potential coupling and of the symmetric two-well-coupling through the thinner barrier.     

Influence of exciton energy on intersubband transition of chirped superlattice GaAs/AlGaAs quantum cascade laser

The influence of exciton energy on intersubband transition was simulated for a chirped supperlattice quantum cascade laser of GaAs/Al_xGa_1-xAs. Exciton energy was modelled as a function of QW width for alloys of various percentages of constituent elements. The results showed that the exciton energy decreased proportionally with increasing QW width. Models were also generated to study exciton energy as a function of the percent alloy contents of Al_xGa_1-xAs barriers for QWs of various widths. Exciton energy showed characteristics of higher discrete energy when QW width was narrower. Transition energy was also simulated from e₁ and e₂ to the 1s exciton state as functions of applied electric field at various QW widths. Our simulation results showed that the transition energy from e₂ to the 1s exciton state increased proportionally to the increasing strength of the electric field. This transition energy was indicative of THz range radiation.     

Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers

We calculate optical gain coefficient and threshold current density in ZnS/MgBeZnS quantum wells (QWs) because ZnS/MgBeZnS QWs are useful for the fabrication of an ultraviolet laser on zinc-blende substrates. The threshold current density in a ZnS/MgBeZnS QW laser diode (LD) with a 10 nm ZnS active layer is calculated to be 1.63 kA/cm². By comparing the measured J _th in a CdZnSe/ZnSSe/ZnMgSSe QW LD with that calculated by us, it is expected that the threshold current density in ZnS/MgBeZnS QW LDs measured by experiment is larger than that calculated by our calculation method.     

Gain studies on a uranine-damc dye mixture laser under nitrogen laser pumping

The radiative and Forster type of energy transfer processes in a dye mixture laser of 7-diethylamino-4-methyl coumarin (donor) and fluorescein disodium salt (acceptor) under nitrogen laser pumping were investigated. The Forster transfer rate calculated from the absorption and emission spectra of acceptor and donor is 1.3 × 10¹¹ liter mole^?1sec^?1. The gain of acceptor at 550 nm was measured for acceptor concentrations N_A from 10^?3M to 3 × 10^?3M for a fixed ratio F = 1 of donor to acceptor concentrations at different pump powers. The results agreed with the rate equation model proposed for the dye mixture laser. The radiative rate constant calculated from these results is 3.1 × 10¹⁰ liter mole^?1sec^?1. Numerical simulation of the rate equations showed that the acceptor reaches peak emission with a time lag of 3 ns with respect to the donor peak emission for F = 0.998, N_A = 10^?5M. This time lag decreases with increasing N_A and becomes zero for N_A = 10^?1M, F = 0.048.     

Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In_0.2Al_0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al_0.3Ga_0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.     

Spectral and surface investigations of Ca2V2O7:Eu3+ nanophosphors prepared by citrate-gel combustion method: a potential red-emitting phosphor for near-UV light-emitting diodes

In the present work, red-emitting Ca₂V₂O₇:xEu³⁺ (x = 0.5–6.0 mol%) nanophosphors, in the form of powders, were synthesized by the citrate-gel combustion method using metal nitrates as precursors and citric acid as fuel. X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy were used to study the structure, morphology and spectral properties of the samples. The chemical compositions and electronic states of the powders were analyzed with X-ray photoelectron spectroscopy. The average crystallite sizes estimated using the XRD data were found to be in the range of 30–45 nm, and were cross verified by TEM. The lattice parameters determined by the POWD program were approximated as a = 7.242 Å, b = 6.674 Å, c = 6.932 Å and V = 291.24 Å³, respectively. Under UV (395 nm) (PL) and electron (CL) excitation, the nanophosphors show characteristic emission from the Eu³⁺ ion (⁵D₀ → ⁷F_j, j = 1–5) with the main peaks at 612 and 616 nm. The maximum emission intensity was recorded from the sample with an Eu³⁺ concentration of 4 mol% and a critical energy distance of 19.084 Å between the donor and the acceptor. Above this concentration, there was a reduction in the intensity due to dipole–dipole induced concentration quenching effects. The potential applications of this phosphor as a high color-purity phosphor in light-emitting diodes are evaluated.     

Sb掺杂Hg1-xCdxTe的光致发光

对不同Sb掺杂浓度Hg_1-xCd_xTe（x≈0.38）样品在3.9—115K的温度范围内进行了光致发光实验测量，观察到与局域激子、带到带和施主受主对有关的辐射复合过程．并用光致发光手段发现Sb掺杂在x≈0.38的Hg_1-xCd_xTe中引入的约30meV的受主能级 关键词：     

Preparation and Photoluminescence of Sm <Superscript>3+</Superscript> Doped YAlO <Subscript>3</Subscript> Phosphor

YAlO₃: Sm³⁺ phosphor has been synthesized by the solid state reaction method with calcium flouride used as a flux. The resulting YAlO₃: Sm³⁺ phosphor was characterized by X-ray diffraction (XRD) technique, Fourier transmission infrared spectroscopy (FTIR), photoluminescence . . PL excitation spectrum was found at 254,332,380,400,407, 603 and 713 nm. Under excitation of UV(713 nm) YAlO₃: Sm³⁺ (0–3 %) broad band emission were observed from 400 to 790 nm with a maximum around 713 nm of YAlO₃ host lattice accompanied by weak emission of Sm³⁺ (⁴G_5/2 – ⁶H_5/2, ⁶H_7/2,⁶H_9/2) transitions. The results of the XRD show that obtained YAlO₃: Sm³⁺ phosphor has a orthorhombic structure. The study suggested that Sm³⁺ doped phosphors are potential luminescence material for laser diode pumping and inorganic scintillators.     

Characterization and photoluminescence studies of Eu<Superscript>2+</Superscript>-doped BaSO<Subscript>4</Subscript> phosphor prepared by the recrystallization method

Eu doped BaSO₄ was prepared by the recrystallization method and characterization of the material was done by using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques. From the XRD pattern of Eu doped BaSO₄ compound, it was found that the prominent phase formed was BaSO₄ and traces of other phases were very weak and the result of FTIR spectrum of BaSO₄:Eu shows that the sulfur-oxygen stretch was found at around 1100 cm⁻¹. The room-temperature PL spectra of the Eu doped BaSO₄ sample showed one peak centered at 374 nm, which is the characteristic emission of Eu²⁺ ion. This emission band at 374 nm corresponds to the 4f⁶ 5d→4f⁷ (⁸S_7/2) transitions of Eu²⁺ ions. The excitation spectrum taken at the wavelength 374 nm extends over a wide range of wavelengths from 220–350 nm with a strong peak at around 260 nm. Furthermore, the present sample shows good crystal quality and high photoluminescence sensitivity. Hence our results suggest possible potential applications of Eu doped BaSO₄ phosphor in optoelectronic devices.     

Two-color polarization spectroscopy of rubidium

We report on two-color, two-photon polarization spectroscopy in a room-temperature rubidium vapor. We use two separate lasers, a strong pump at 780 nm to induce an anisotropy in the atomic polarization and a weak probe at 776 nm to interrogate this anisotropy. The lasers are resonant with the 5²S_1/2 → 5²P_3/2 and 5²P_3/2 → 5²D_5/2 transitions in rubidium, respectively. Finally, we have used our polarization spectroscopy signal as an error signal to lock the 776 nm laser. This modulation-free locking scheme allows us to detune the lock point of the second laser by adjusting the detuning of the laser used for the first transition.     

Spectroscopy of Te2 with modulation transfer: Reference lines for precision spectroscopy in Yb+ at 467 nm

Modulation-transfer spectroscopy is used to observe resonances in ¹³⁰Te₂ near 467 nm. A signal-to-noise ratio of 500 is obtained with 1 mW laser power and with a time constant of 10 ms; the lineshapes are investigated in detail for different demodulation phases. The signal can be used to servolock a blue dye ring laser at 467 nm on a ¹³⁰Te₂ resonance which serves as reference line for precision spectroscopy on single, trapped Yb⁺ ions at 467 nm.