Dynamic correlation effects on drag resistivity of a symmetric electron–electron bilayer

We have studied the effect of dynamic electron correlations on Coulomb drag in a low density symmetric electron–electron bilayer. The drag resistivity is calculated considering the contribution from direct e–e scattering processes using the semi-classical Boltzmann approach, with the effective inter-layer interaction W₁₂(q, ω; T) determined within the ?wierkowski, Szyman?ki, and Gortel model, generalized to include the dynamics of electron correlations through the frequency-dependent intra- and inter-layer local-field correction (LFC) factors. In turn, the LFCs are obtained by extending the quantum Singwi, Tosi, Land, and Sjölander (qSTLS) approach to finite temperatures. At low temperatures (T ? 2 K), the calculated drag resistivity is found to agree nicely with the measurements by Kellogg et al., while it is somewhat overestimated at higher temperatures. The overestimation is seen to increase with decreasing density of electrons. However, there is found to be a marked improvement over the predictions of the conventional (i.e., static) STLS and random-phase approximation (RPA). It turns out that the inclusion of exchange-correlations in the RPA causes a red-shift in the bilayer plasmons which leads to an enhancement of drag resistivity. Our study demonstrates clearly the importance of including the dynamical nature of correlations to have a reasonable account of measured drag resistivity.     

The Coulomb sum for electron scattering in the relativistic random phase approximation

The Coulomb sum value for electron scattering is estimated using the relativistic random phase approximation (RPA) in the field theory for nuclear matter. RPA correlations due to σ-, ω- and ϱ-meson exchanges reduce the sum value of the relativistic Hartree approximation by about 15–20%.     

Ⅰ类和Ⅱ类准周期半导体超晶格的电子子带和波函数

本文将包迹函数近似推广用于计算有理数近似下,垂直于超晶格轴的波矢K_⊥不等于零时,准周期半导体超晶格(QSS)的电子子带和波函数,对K_⊥=0的情形,分别计算了Ⅰ类的GaAs/Al_xGa_1-xAs和Ⅱ类的InAs/GaSb QSS的电子子带和波函数,直至代序数m=9和6。对于价带对导带影响强的InAs/GaSb QSS,分别计算了m=5和6时电子子带随K_⊥的变化关系。并提出了利用本文结果计算Ⅰ类的GaAs/Al_xGa_1-xAs QSS带间集体激发的具体方法。     

Effect of finite-temperature local field corrections on many-body properties of quantum wires

The effect of low temperature on the many-body properties of an n-type GaAs-based quasi one-dimensional electron gas (quantum wire) has been investigated in the RPA, Hubbard and STLS approximations. Numerical results for the finite-temperature static structure factors, local field corrections, pair correlation functions, plasmon dispersion relations and inverse static dielectric functions of the system have been obtained and compared with the zero-temperature values. As a general result, the behavior of the system at finite-temperature does not change significantly at small values of wave vectors. Also, it has been found out that while applying the temperature dependent Hubbard and STLS to the quantum wire yields different results for local field corrections and pair correlation functions, the increase in temperature within all approximations causes the plasmon modes to shift upward in energy and the sharp peaks in the inverse static dielectric curve to become less pronounced.     

Screening in a δ-doped semiconductor

The screening of an impurity in the quasi-two-dimensional (2D) electron gas in a δ-doped semiconductor structure is investigated. The screened impurity matrix elements are calculated and compared using three different approaches: the 2D random phase approximation (RPA), the corresponding 2D Thomas–Fermi theory and a quasi-three-dimensional (3D) Yukawa-like screening model. It is found that the 2D Thomas–Fermi theory differs from the RPA result, even in the limit of low q vectors, if more than one subband is occupied. This result is explained analytically by closely examining theq → 0 limit of the dielectric tensor. The 2D Thomas–Fermi theory is shown to represent a poor approximation to the RPA whereas the quasi-3D screening model agrees well with the RPA results for not too smallqvectors. Furthermore, this model reduces computing times by orders of magnitude in comparison with the RPA. Thus, our 3D screening model considerably simplifies the calculation of impurity scattering rates in the investigation of the electron mobility in a δ-doping layer.     

Field-theoretical treatment of approximations to radiative transitions in atoms

Starting with a field-theoretical many-body definition of eigenvalues and radiative transition matrix elements for atomic systems, a systematic approach is taken to approximations of the exact results. The guiding principle is the maintenance of gauge invariance (GI) in radiative transition S matrix elements. At the level of the one Coulomb exchange approximation in both the one-electron and the electron-hole propagator kernels, one obtains the well-known Hartree-Fock (HF) and random phase approximations (RPA). A detailed discussion and comparison of various approaches to RPA is made, in the case of both N and N ? 1 electron shielding (the regular HF and HF with frozen relaxed core—FRC). In the former case, a new and considerably simpler form of the RPA equations are obtained than heretofore proposed equivalent forms. Finally, a different approximation than the usual HF and RPA, involving higher-order correlations, is developed to illustrate how such approximations can be systematically generated.     

Higher multipole surface plasmons,plasmon bands in periodic metallic heterostructures,and plasma modes of semiconductor superlattices

The electronic collective excitations are investigated for a number of different systems whose equilibrium electron density n₀(z) is spatially varying. The relation between higher multipole surface modes, waveguide like plasma modes of a low electron density layer embedded in a high density host, and plasmon bands of periodic metallic heterostructures and semiconductor superlattices is pointed out.     

Optical properties of excitons in semiconductor superlattices and microcavities

The optical response of Mott–Wannier excitons is investigated in semiconductor superlattices and microcavities. p-Polarized light is considered to calculate the reflectivity R_pand dispersion relation of the collective normal modes in superlattices accounting for extrinsic Morse potential wells, andR_p in microcavities. Results of R_pexhibit well-defined peaks of the exciton bound states in the Morse potentials for both transverse and longitudinal modes. Comparisons ofR_p with experimental reflectivity data of light for semiconductor microcavities exhibit good qualitative agreement as well as Rabi splitting.     

Many-body properties of a disordered charged Bose gas superlattice

We study some many-body properties of a disordered charged Bose gas (CBG) superlattice—an infinite array of CBG layers each of which containing disorder. The latter is assumed to cause collisions with the charged bosons, the effect of collisions being taken into account through a number-conserving relaxation time approximation incorporated within the random phase approximation (RPA) at T =  0. We go beyond the RPA and include a local-field correction G(q, q_z) which is assumed to be collision independent, as an approximation. The resulting density–density correlation function is then used to calculate a number of many-body quantities of physical interest, e.g. (a) collective modes, (b) static structure factor, (c) energy-loss function, (d) plasmon density of states, and (e) ground-state energy. The effects of collisions on these quantities are discussed, and the results are compared with the corresponding results for an electron gas superlattice.     

Suppression of the singularly localized states in dimer quasiperiodic Fibonacci superlattices

Using the transfer-matrix technique, we have numerically investigated the effect of introducing the dimer on the nature of the states across Dimer Fibonacci semiconductor superlattices on the miniband structure of the GaAs/Al_xGa_1?xAs superlattices. By the introduction of the dimer model, the transmission spectra reveal the appearance of a miniband structure with a concomitant disappearance of the singularly localized states. This behavior is due to the interaction between the states of the dimer wells inside the potential and, therefore, the system is seen by the particle as two overlapped ordered structures.     

Low temperature electron mobility in a coupled quantum well system

We study low temperature electron mobility μ_nin a GaAs/Al_x Ga _1 − xAs coupled double quantum well structure. Both the extreme barriers are δ -doped with Si so that the electrons diffuse into the adjacent wells forming two sheets of two-dimensional electron gas (2DEG) separated by a thin central barrier. The subband electron wavefunctions and energy levels are numerically obtained as a function of the well width, barrier width and doping concentration. The screening of ionized impurity potential by the 2D-electrons is obtained in terms of the static dielectric response function within the random phase approximation (RPA). μ_nis calculated by solving the coupled Boltzmann equation in the relaxation time approximation. The coupling of wavefunctions through the barrier, screening of ionized impurities and intersubband scattering effects on μ_nare investigated.     

Superconducting probe of electronic correlations and exchange field based on the proximity effect in F/S nanostructures

The proximity effect and competition between the BCS and LOFF states are studied in the Cooper limit for thin F/S and F/S/F nanostructures, where F is a ferromagnet and S is a superconductor. The dependences of the critical temperature on the exchange field I, electron correlations λ _f, and the thickness d _f of the F layer are derived for F/S bilayers and F/S/F trilayers. In addition, two new π-phase superconducting states with electron-electron repulsion in the F layers of F/S/F trilayers are predicted. A two-dimensional LOFF state in F/S/F trilayers is possible only in the presence of a weak magnetic field and the appropriate parameters of the F and S layers. The absence of the suppression of three-dimensional superconductivity in short-period Gd/La superlattices is explained and the electron-electron coupling constant in gadolinium is predicted. A method of superconducting sounding spectroscopy based on the proximity effect is proposed for determining the symmetry of the order parameter, the magnitude and sign of electron correlations, and the exchange field in various nanomagnets F.     

Intersubband optical nonlinearity and bistable behavior of semiconductor superlattices

The optical nonlinearity and bistability (OB) induced by intersubband transitions (ISBTs) in semiconductor superlattices are studied by means of the Kronig–Penney model and the density-matrix method. The OB state equation in a Fabry–Perot configuration is derived. It is shown that the ISBT-induced OB can be realized over a wide frequency range, and its bistable domain and hysteresis loop are much larger than those of a two-level system. Numerical illustration of the OB behavior in a GaAs/Al_xGa_1−xAs superlattice is also given.     

Wave function engineering in compressive- and tensile-strained laser structures

The engineering of the valence subbands for device applications has concentrated on the energy separation between heavy- and light-hole states. We show that the degree of overlap between the envelope functions of heavy- and light-hole states can affect the in-plane dispersion of the highest hole subband. We consider ways to reduce this overlap by spatially separating the heavy- and light-hole states to different layers, while maximizing their energy separation. Strain-compensated superlattices where opposite strains are introduced in the well and barrier regions offer such possibilities and lead to a significant increase of the optical gain in semiconductor lasers. We consider the In_xGa_1-xAs_yP_1-y /In_x'Ga_1-x'As_y'P_1-y' system grown on an InP substrate where the wells are under biaxial compression while the barriers are under tension. In this type of structures, the electron and heavy-hole states are confined to the compressive layers whereas the light-holes are confined to the tensile layers. We also discuss the possibility of confining light-hole and electron states to wells under tension, of potential benefit for lasers operating in the transverse magnetic (TM) mode.     

Study of Ge x Si1−x /Si superlattices by ellipsometry

Multiple-angle-of-incidence (MAI) ellipsometry is used to study Ge _x Si_1–x /Si superlattices fabricated by a RRH/VLP-CVD system. Based on the fundamental ellipsometric equations and properties of semiconductor superlattices (SL), various parameters of SL structure, such as the sublayer thickness, complex refractive index and composition, are achieved precisely and simultaneously. The results obtained from ellipsometry are well consistent with those from growth conditions and other characterization techniques.     

Local field correction effect on inelastic Coulomb scattering lifetime of two-dimensional quasiparticles at low temperatures

We have investigated the effect of local field correction on the inelastic Coulomb scattering lifetime of high mobility quasiparticles in a quantum layer at low temperatures. By replacing temperature-dependent dynamic dielectric function for the zero-temperature one in calculations, we have considered our improved zero-temperature STLS local field correction for low temperatures in lifetime calculations and compared the results with those obtained from the RPA and Hubbard approximation. It has been found that the quasiparticle lifetime decreases by including the STLS local field factor in all temperatures, energies and layer thicknesses.     

Continuum RPA correlations in quasielastic electron scattering from 12C decay on (e,e'p) and (e,e'n) reaction channels

We investigate the rôle of RPA correlations in longitudinal and transverse response functions for inelastic electron scattering from ¹²C at momentum transfers ranging between 200 MeV/c and 550 MeV/c. We refer to a continuum self-consistent RPA theory with a SK3 interaction. Electromagnetic operators are taken for uncorrelated nucléons. The partial response on (e, e'p) and (e, e'n) reaction channels is also calculated. Since energy-weighted sum rules are conserved, we can control the effect of the Hartree-Fock non-locality expressed by the SK3 nucleon effective mass as well as the action of creation and descruction of 1p 1h pairs on the true ground state induced by the RPA residual interaction.     

On the role of the Δ(1232) on the transverse nuclear response in the (e,e′) reaction

The transverse nuclear response to an electromagnetic probe which is limited to create (or destroy) a particle-hole (ph) or delta-hole (Δh) pair is analyzed. Correlations of the random phase approximation (RPA) type and self-energy insertions are considered. For RPA correlations we have developed a scheme which includes explicitly the Δ and the exchange terms. Self-energy insertions over ph and Δh bubbles are studied. Several residual interactions based on a contact plus a (π + ϱ)-meson exchange potential are used. All calculations are performed in non-relativistic nuclear matter. The main effect of the Δ is to reduce the intensity over the nuclear quasi-elastic peak. Exchange RPA terms are very important, while the terms with self-energy insertions depend strongly on the residual interaction employed. Our results are compared with data for ⁴⁰Ca at momentum transfer q = 410 and q = 550 MeV/c, where the longitudinal response is also briefly discussed.     

Sum rules in extended RPA theories

Different moments m_k of the excitation strength function are studied in the framework of the second RPA and of the extended RPA in which 2p2h correlations are explicitly introduced into the ground state by using first-order perturbation theory. Formal properties of the equations of motion concerning sum rules are derived and compared with those exhibited by the usual Ip1h RPA. The problem of the separation of the spurious solutions in extended RPA calculations is also discussed.