Resonance Bragg structure with double InGaN quantum wells

The effect of exciton-polariton resonance on the optical properties of periodic heterostructures with double InGaN quantum wells in a GaN matrix has been studied. It has been found that the light reflection is amplified at the frequency corresponding to the exciton energy when it coincides with the frequency of the Bragg resonance. This effect is observed to be twice as large as that in a similar system of single quantum wells.     

Resonant Bragg reflection from quantum-well structures

The resonant spectra of light reflected and transmitted by a heterostructure with a finite system of equidistant quantum wells have been calculated. Recurrence relations have been derived connecting the amplitude reflection coefficients from N and N - 2 quantum wells, and analytical properties of the reflection coefficient as a function of the complex frequency ω have been established. A method has been proposed which allows one to find complex frequencies of coupled exciton-photon nonstationary modes, or exciton-polaritons. It has been shown that the resonant Bragg structures represent a particular case where among N eigenmodes only one is radiative.     

Bragg polaritons: strong coupling and amplification in an unfolded microcavity

Periodic incorporation of quantum wells inside a one-dimensional Bragg structure is shown to enhance coherent coupling of excitons to the electromagnetic Bloch waves. We demonstrate strong coupling of quantum well excitons to photonic crystal Bragg modes at the edge of the photonic band gap, which gives rise to mixed Bragg polariton eigenstates. The resulting Bragg polariton branches are in good agreement with the theory and allow demonstration of Bragg polariton parametric amplification.     

半导体微结构物理效应及其应用讲座第1讲布拉格衍射效应在半导体光电子器件中的应用与发展

文章对布拉格衍射效应在半导体光电子材料和光电子器件，特别是在光纤通信中的光电子器件的应用和发展进行了详细的介绍．文中以布拉格光栅衍射效应的光反馈和选模功能为主线，逐一介绍了X射线双晶布拉格衍射技术在半导体材料、特别是在量子阱和应变量子阱超薄层晶体生长和质量控制方面的作用，介绍了内建布拉格光栅对光通信用光信号源的发展所起的重要作用，波导光栅在复用和解复用过程中的作用，以及光纤布拉格光栅在全光纤通信系统中的应用及发展等．     

Temperature tuning of the Bragg resonance of InAsP/InP Bragg-spaced quantum wells grown by MOCVD

In this article, we presented a study of InAs_0.04P_0.96/InP Bragg-spaced quantum wells (BSQWs), which were grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and of narrow PL line width. From the reflection spectra at different temperatures, we presented a theoretical analysis of the changes in band structure for resonant and near-resonant wells, and proposed a new scheme of using the temperature to tune the Bragg resonance of Bragg spaced quantum wells.     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

Quantum spin Hall effect in inverted type-II semiconductors

The quantum spin Hall (QSH) state is a topologically nontrivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells and in this Letter we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. The quantum well exhibits an "inverted" phase similar to HgTe/CdTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking are essential. Remarkably, the topological quantum phase transition between the conventional insulating state and the quantum spin Hall state can be continuously tuned by the gate voltage, enabling quantitative investigation of this novel phase transition.     

Characterization of (In,Ga)As/GaAs strained-layer multiple quantum wells with high-resolution X-ray diffraction and computer simulations

Pseudomorphic, highly strained (In,Ga)As/GaAs multiple quantum well structures were grown by molecular beam epitaxy and characterized by high-resolution X-ray diffraction. Thickness, lattice mismatch and chemical composition of the quantum wells were determined from measurements of satellite Bragg reflections and comparison with calculated rocking curves. In periodic structures, quantum wells with a width of less than 10 nm can be characterized by this technique. The results are compared with transmission electron microscopy, optical absorption and optical emission spectroscopy.     

On the possibility of designing interacting semiconductor quantum wells with zero perturbation coupling

The paper describes the possibility of designing matched interacting semiconductor quantum wells. It is shown that for a given eigenstate of a quantum well (QW), it is always possible to find another QW in such a way that the coupling leaves the original eigenstate of the host QW unperturbed irrespective of the strength of interaction. For rectangular QWs, the condition is met with whenever the second QW has appropriate width and depth so that phase travelled by an electron wave through it is an integral multiple of π.     

Phase dependence of cross-phase modulation in asymmetric quantum wells

We study the Kerr nonlinearity associated with cross-phase modulation based on electromagnetically induced transparency in asymmetric double quantum wells. It is shown that, different from atomic system, not only the nonlinear dispersion and absorption but also the linear absorption depends on the relative phase of the laser fields because of the Fano interference. By choosing the parameters appropriately, large cross-phase modulation with nearly vanishing two-photon absorption, even π phase shift with single photon level, could be achieved in the asymmetric quantum wells.     

Exciton-polariton absorption in periodic and disordered quantum-well chains

The exciton-polariton transfer and absorption in regular and disordered structures with a finite number of quantum wells are studied theoretically. The transfer matrix method is invoked in the exciton resonance region to calculate the reflectivity, transmissivity, and absorptivity spectra, as well as the integrated absorptivity as a function of the γ/Γ₀ ratio of the parameters of nonradiative and radiative damping of quasi-two-dimensional excitons. It is shown that the integrated absorptivity as a function of γ (temperature) follows a universal pattern, more specifically, it increases monotonically from zero at γ = 0 to saturate at γ/Γ₀ ? 1. Because the exciton-polariton absorption being single mode, the integrated absorptivity in Bragg quantum-well structures is substantially lower than that in short-period structures, in which absorption involves the whole spectral multitude of modes. The intrawell disorder associated with fluctuations in the frequencies of exciton excitation in quantum wells enhances the integrated absorptivity to the level typical of light absorption with no resonance among excitons of different quantum wells. The interwell disorder originating from fluctuations in quantum-well separation likewise leads to an increase in the integrated absorptivity.     

An inhomogeneously distorted state of the crystal structure of a Zn<Subscript>0.95</Subscript>Fe<Subscript>0.05</Subscript>Se cubic crystal

The structural state of a bulk Zn_0.95Fe_0.05Se cubic crystal grown by the chemical transport method from the gas phase has been investigated using thermal neutron diffraction at room temperature. It has been found that the measured neutron diffraction patterns of the crystal, in addition to structural Bragg peaks, contain a clearly identified system of superstructure reflections with the wave vector k = (1/3 1/3 1/3)2π/a (where a is the parameter of the cubic unit cell), which is interpreted as a clear evidence of the incipient transition state preceding the concentration phase transformation fcc ? hcp. It has been shown that the resulting structural state includes an inhomogeneous microstrain field with the possible appearance of long-wavelength modulations based on the initial sphalerite structure.     

Oscillatory screening and quantum interference effects on electron collisions in quantum plasmas

The oscillatory screening and collision-induced quantum interference effects on electron-electron collisions are investigated in dense quantum plasmas. The modified Debye-Hückel potential with the total spin states of the system is considered to obtain the differential electron-electron scattering cross section in quantum plasmas. It is shown that the electron-electron scattering cross section decreases with an increase of the quantum wave number. In addition, the minimum position of the cross section has been appeared with increasing the collision energy at the scattering angle θL=π/4. It is also found that the oscillatory screening effects strongly suppress the cross section near θL=π/4. In addition, it is found that the quantum interference effects suppress the cross section, especially, for the forward and backward scattering cases.     

Pionic deuterium

Data taking of the PIONIC HYDROGEN project has been completed with a high statistics study of the strong-interaction effects in πD by measuring the Kβ X-radiation for three different target densities with a high resolution Bragg crystal spectrometer. The πD hadronic shift will provide a constraint for the πN isospin scattering lengths extracted from the πH measurement. The hadronic width is directly related to pion production at threshold.     

Optical detection of an electric field in a GaAs/AlGaAs <Emphasis Type="Italic">n</Emphasis>-<Emphasis Type="Italic">i</Emphasis>-<Emphasis Type="Italic">n</Emphasis> heterostructure with double quantum wells

Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.     

蓝移阱中单个铯原子基态磁不敏感态的相干操控

单个中性原子的超精细微波跃迁能级的相干性是基于中性原子量子计算、量子信息处理和量子模拟的基础.我们在实验上利用微波双光子拉曼过程实现了蓝移阱中铯原子基态超精细态|6S1/2,F=3,mF=-1〉和|6S1/2,F=4,mF=1〉间的相干操控,并研究了其相对能级频移随磁场的变化,获得了"魔术"磁场的大小为1.4(2)Gauss(1 Gauss=10-4 T).结果表明,利用魔术磁场可大幅改善超精细态|6S1/2,F=3,mF=-1?和|6S1/2,F=4,mF=1〉之间的相干性,测量到的相干时间可达1.0(1)s.     

多重散射理论声光耦合波方程的龙格-库塔法数值分析

提出利用直观、方便且具有普遍性的4阶龙格-库塔(R-K)方法求解基于多重散射理论推导出的声光耦合波方程, 模拟计算布喇格衍射下衍射效率随各关键参数的变化关系, 分析入射光偏离Bragg角对Bragg衍射光效率的影响程度, 以及最佳Bragg衍射效率所需参数的选取问题. 模拟结果表明：Q（Klein-Cook参数）=4π时Bragg衍射效率可达97%, 证实了特征长度作为选取声光互作用长度的合理性.     

Bragg quantum wells in weak confinement regime

The optical properties of Bragg quantum wells are studied for exciton confinement under center-of-mass quantization. A variational model of Wannier exciton envelope function, that embodies the correct boundary conditions for center-of-mass, is adopted for calculation. The present non-adiabatic exciton model is compared with adiabatic results and with heuristic “hard sphere” model. The radiative self-energy of a single-quantum well (SQW) and multi-quantum wells (MQWs) are computed in the semiclassical framework, and in effective mass approximation, by self-consistent solution of Schroedinger and Maxwell equations. This microscopic solution is free from “fitting” parameter values, except for the non-radiative broadening, and also the exciton dead-layer and the additional boundary condition are not taken ad hoc, but come coherently from the variational principle and self-consistent Schroedinger-Maxwell solution. Dispersion curves of exciton-polariton propagating in a MQW, under Bragg condition, are studied by selected numerical examples. The case of optical gap in correspondence of higher excited states is studied, and, moreover, the interesting effect of gap enhancement or inhibition, in correspondence of non-resonant Bragg energy, will be addressed.     

Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multinle auantum wells at room temnerature

Tensile-strained Ge/SiGe multiple quantum wells （MQWs） were grown on a Ge-on-Si virtual substrate using ultrahigh vacuum chemical vapor deposition on an n＋-Si （001） substrate. Direct-bandgap electroluminescence from the MQWs light emitting diode was observed at room temperature. The quantum confinement effect of the direct-bandgap transitions is in good agreement with the theoretical calculated results. The redshift mechanism of emission wavelength related to the thermal effect is discussed,     

High-resolution, high-speed photorefractive incoherent-to-coherent optical converter

We demonstrate a photorefractive incoherent-to-coherent optical converter driven by ultraviolet light that provides a 35-mus response time and an optical resolution of 124 line pairs/mm. The device, implemented in KNbO(3) , operates with a modulating intensity of 85 mW/cm(2) , which corresponds to an optical switching energy per bit of 0.5 pJ. A conversion rate of the order of 90 Gbits/(s cm(2)) is achieved. The conversion between the ultraviolet light and the visible laser beam at lambda=532 nm occurs through anisotropic Bragg diffraction at a modulated interband photorefractive grating. Our device has a better optical resolution and conversion rate than optically addressed solid-state spatial light modulators based on the photorefractive effect and multiple quantum wells, and it is also faster than devices based on liquid crystals.