Magnetoabsorption spectra of magnetoexciton transitions in GaAs/Ga0.7Al0.3As quantum wells

The internal transitions and absorption spectra of confined magnetoexcitons in GaAs/Ga0.TA10.aAs quan- tum wells have been theoretically investigated under magnetic fields along the growth direction of the semiconductor heterostructure. The magnetoexciton states are obtained within the effective-mass ap- proximation by using a variational procedure. The trial exciton-envelope wavefunctions are described as hydrogeniclike polynomial functions. The internal transition energies are investigated by studying the allowed magnetoexcitonic transitions using terahertz radiation circularly polarized in the plane of the quantum well. The intraexcitonic magnetoabsorption to 2p^± like magnetoexciton states as functions of the coefficients are obtained for transitions from 1s-like applied magnetic field.     

Dependence of propagation loss on etching depth in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As strip-loaded type waveguides

Al_0.3Ga_0.7As/GaAs/Al_0.3Ga_0.7As strip-loaded waveguides were fabricated using a broad-beam electron cyclotron resonance (ECR) ion source. It was found that a very smooth etching profile can be obtained by ECR ion etching and the etching rate of Al_0.3Ga_0.7As is 70 nm min^-1. The propagation losses of strip-loaded type III–V compound semiconductor waveguides with various etching depths were studied by the Fabry-Perot cavity method. It was observed that the reflectance at the cleavage increases slightly with etching depth for TE polarization. The propagation loss is measured as 1.5 dB cm^-1 for etching depth of 0.7 m, less than 1 dB cm^-1 for 0.8 m, and 3.5 dB cm^-1 for 1.1 m.     

对称GaAs/Al0.3Ga0.7As双量子阱中激子的束缚能

在有效质量近似下采用简单的尝试波函数变分地计算了对称GaAs/Al0.3Ga0.7As双量子阱中激子体系束缚能,研究了体系束缚能随阱宽和垒宽的变化情况.发现双量子阱中激子体系束缚能随阱宽变化同单量子阱情况类似,但束缚能的峰值出现在阱宽为10(A)左右,峰值位置小于单阱的情况;束缚能随垒宽的增加有一极小值,这与波函数向垒中的渗透有关.     

Coherent oscillations of holes in GaAs0.86P0.14/Al0.7Ga0.3As surface quantum well

We show that in a GaAs_0.86P_0.14/Al_0.7Ga_0.3As near-surface quantum well, there is coherent oscillation of holes observed in time-resolved reflectivity signal when the top barrier of the quantum well is sufficiently thin. The quantum well states interact with the surface states under the influence of the surface electric field. The time period of the observed oscillation is 120±10 fs.     

Sulfur diffusion into GaAs/Ga0.7Al0.3As heterostructures for device applications

0.7 Al_0.3As heterostructure layers grown by liquid phase epitaxy. GaS and As in a weight ratio of 2:1 were used as the diffusion sources. The source of GaS was carefully selected via X-ray diffraction analysis. Sulfur diffusion was carried out in a sealed quartz ampoule at a temperature of 820 °C and an arsenic pressure of 1 atmosphere. The carrier concentration profile from experimental results agrees well with the theoretical profile, which was calculated with the complementary error function solution assuming a segregation coefficient of m=1 at the hetero-junction interface. A smooth diffusion of sulfur was observed without any surface damage or hetero-interface defects. A double heterostructure laser was fabricated by employing sulfur diffusion. Cathode luminescence intensity analysis revealed that no damage was caused by sulfur diffusion at the active layer. Excellent characteristics such as a long life, a low threshold current, a fundamental transverse mode oscillation and a high modulation speed were obtained. Received: 1 June 1998/Accepted: 10 August 1998     

Investigation of various optical transitions in GaAs/Al0.3Ga0.7As double quantum ring grown by droplet epitaxy

This work examines the optical transitions of a GaAs double quantum ring (DQR) embedded in Al_0.3Ga_0.7As matrix by photoreflectance spectroscopy (PR). The GaAs DQR was grown by droplet epitaxy (DE). The optical properties of the DQR were investigated by excitation‐intensity and temperature‐dependent PR. The various optical transitions were observed in PR spectra, whereas the photoluminescence (PL) spectrum shows only the DQR and GaAs band emissions. The various optical transitions were identified for the GaAs near‐band‐edge transition, surface confined state (SCS), DQR confined state, wetting layer (WL), spin–orbital split (E_GaAs + Δ_o), and AlGaAs band transition. PR spectroscopy can identify various optical transitions that are invisible in PL. The PR results show that the GaAs/AlGaAs DQR has complex electronic structures due to the various interfaces resulting from DE.     

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method

Two kinds of InAs/GaAs quantum dot(QD) structures are grown by molecular beam epitaxy in formation–dissolution–regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the Ga As barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.     

The effects of the intense laser and magnetic fields on the group velocity of light in GaAs/Al0.3Ga0.7As near-surface quantum well

In the present work, we investigated the simultaneous effects of intense non-resonant laser and external magnetic fields on the electronic structure and the nonlinear optical properties (the light absorption, the refractive index and the group velocity) of GaAs/Al_0.3Ga_0.7As near-surface quantum well. The calculations were performed within the compact density-matrix formalism under the steady state conditions with the use of the effective mass approximation. The obtained results show that the electronic structure and, consequently, the optical properties are sensitive to the dressed well induced asymmetry and the effects of the magnetic field. By changing the intensities of the magnetic and laser fields, we can obtain the control of the group velocity, without the need for the growth of many different samples.     

Weak localization in Al0.25Ga0.75As/In0.2Ga0.8As/GaAs wires

The phase coherence length L_Ø, its temperature dependence and the spin-orbit scattering length L_SO in Al_0.25Ga_0.75As/In_0.2Ga_0.8As/GaAs wires fabricated by electron-beam lithography and CH₄/H₂ Reactive Ion Etching (RIE), were extracted by fitting a 1-dimensional weak localization theory to two-terminal measurements in the temperature range between 2 K and 50 K. The scattering mechanism was found to be Nyquist (electron-electron collisions with small energy transfer).     

Confined electron and shallow donor states in graded GaAs/Al Ga As spherical quantum dots

A theoretical study is performed on the confined electron and shallow donor states properties in graded GaAs/Al_xGa_1-xAs spherical quantum dots. The two lowest energy levels of a confined electron are obtained taking into account the dependence of the electron effective mass on the spatial profile of the Al molar fraction. The ground state of a single Si shallow donor, which may be located at an arbitrary position in the structure, is calculated through a variational approach. Depending on the dot interface width and localization, we find that the energy levels of the electron and donor states for the system under study can be blue or red shifted appreciably in comparison to those calculated within the sharp interface picture. We show that it is necessary to have accurate information concerning the interface of semiconductor dots whose samples are used in the experiments, in order to achieve a better understanding of their optical properties. Received 31 May 1999     

Numerical simulation of the temperature dependence of the photoluminescence spectra of InAs/GaAs quantum dots

A mathematical model is proposed for describing the temperature dependence of the photoluminescence spectrum of self-ordered arrays of quantum dots with due regard for the electron-phonon interaction and different transfer processes in the “quantum dot-wetting layer-barrier” system. This model, as applied to analysis of the experimental spectra of InAs quantum dots grown on GaAs vicinal substrates, makes it possible to separate the manifestations of different mechanisms of excitation transfer in the photoluminescence spectra and to relate the observed temperature dependences of the spectra to the structural features of the quantum-dot array.     

Selective optical control of electron spin coherence in singly charged GaAs-Al0.3Ga0.7As quantum dots

Coherent transient excitation of the spin ground states in singly charged quantum dots creates optically coupled and decoupled states of the electron spin. We demonstrate selective excitation from the spin ground states to the trion state through phase sensitive control of the spin coherence via these three states, leading to partial rotations of the spin vector. This progress lays the ground work for achieving complete ultrafast spin rotations.     

Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire

We report the successful fabrication of a V-grooveAl_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements.