Temperature tuning of the Bragg resonance of InAsP/InP Bragg-spaced quantum wells grown by MOCVD

In this article, we presented a study of InAs_0.04P_0.96/InP Bragg-spaced quantum wells (BSQWs), which were grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and of narrow PL line width. From the reflection spectra at different temperatures, we presented a theoretical analysis of the changes in band structure for resonant and near-resonant wells, and proposed a new scheme of using the temperature to tune the Bragg resonance of Bragg spaced quantum wells.     

Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells

We have performed magneto-transport experiments in modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity and low-field Hall effect) measurements have been performed in the temperatures between 1.8 and 275 K, while quantum Hall effect measurements in the temperatures between 1.8 and 47 K and magnetic fields up to 11 T.The variations of Hall mobility and Hall carrier density with nitrogen mole fractions and temperature have been obtained from the classical magnetotransport measurements. The results are used to investigate the scattering mechanisms of electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. It is shown that the alloy disorder scattering is the major scattering mechanism at investigated temperatures.The quantum oscillations in Hall resistance have been used to determine the carrier density, effective mass, transport mobility, quantum mobility and Fermi energy of two-dimensional (2D) electrons in the modulation-doped Ga_0.7In_0.3N_yAs_1−y/GaAs quantum wells. The carrier density, in-plane effective mass and Fermi energy of the 2D electrons increases when the nitrogen mole fraction is increased from y=0.004 to 0.015. The results found for these parameters are in good agreement with those determined from the Shubnikov-de Haas effect in magnetoresistance.     

Stark ladder laser with a coherent electron subsystem

A theory of generation in a two-subband “Stark ladder” with a coherent electron subsystem is developed. In the proposed model, electrons reach the upper level of a quantum well due to resonant tunneling and pass to the lower level of the well (vertical transitions), emitting a photon ?ω, then tunnel resonantly to the upper level of a neighboring well, performing a radiative transition, and so on until electrons leave the lower level of the last well. A static electric field applied to the superlattice shifts the levels so that the lower level of the nth well coincides with the upper level of the (n+1)th well. Analytic expressions are derived for the wave functions and polarization currents of an N-well structure. The possibility of bulk oscillation of the N-well structure in the optimal mode with an efficiency close to unity, weak reflection, and a linear dependence of the power on the pumping current is demonstrated. The total generation power is proportional to the number of wells. For structures with an even number of wells, the energy of electrons from the emitter must simply coincide with the resonance energy for any laser fields; i.e., the energy tuning which is necessary in a single-well structure is not required. Universal relations are derived for parameters of the N-well structure, which ensure the simultaneous fulfillment of resonance conditions in all the wells. The possibility of coherent lasing in a one-subband Stark ladder with a lower gain is also indicated.     

Resonance optical spectroscopy of long-period quantum-well structures

Theory of specular light reflection from long-period quantum-well structures taking into account the exciton contribution to dielectric polarization has been developed for an arbitrary relation between the background refractive index in the well, n _a, and barrier-material refractive index nb. General expressions for the optical reflection and transmission coefficients for a structure with N equidistant quantum wells are derived with the use of the Green’s function and transfer matrix methods. Normal and oblique light reflectance spectra from II-VI-based heterostructures were found to reveal a bright interference pattern caused by the difference between n _a and n _b. A comparison of the theory with experiment has yielded the dispersion of n _a and n _b within a broad wavelength range and the parameters of the quasi-two-dimensional heavyhole exciton (e1-hh1), namely, the resonant frequency and the radiative and nonradiative damping rates. Reflectance spectra from resonant Bragg and quasi-Bragg structures with real exciton parameters are calculated, and the effect on these spectra of the refractive-index difference and the deviation from the Bragg condition is analyzed. Fiz. Tverd. Tela (St. Petersburg) 39, 2072–2078 (November 1997)     

Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells

This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.     

Probing of the multilayer Si/SiGe structure with a flux of nonequilibrium acoustic phonons

The Si/Si_0.8Ge_0.2/Si double quantum wells grown on a silicon substrate were probed in the reflection geometry with a flux of terahertz nonequilibrium acoustic phonons produced by the heat pulse technique. A comparison of the detected phonon arrival signals with those obtained under similar conditions from a silicon sample without a quantum well structure permits one to isolate the component due to the phonon reflection from quantum wells. This reflected signal was found to be strongly anisotropic.     

二阶量子路径的相干控制

研究了有_N个中间能级连接初态和目标态的情况下量子路径的控制策略．以_N=3的量子体系为例,详细阐述了针对弱的宽频场的4_N分块控制方案,其中分块的边界频率依赖于量子体系的共振频率．此策略利用了路径幅度中共振和非共振项的相干效应,可通过只调节2_N个相位变量实现．     

Resonant-tunneling structure of quantum wells in the p-i-n photovoltaic element

The method for efficient separation of photoexcited carriers, based on the resonant tunneling phenomenon in the quantum well structure placed into the i-region of the p-i-n photovoltaic element, is proposed. The parameters of quantum well structures based on the GaAs/Ga_1?x In _x As system, implementing the mode of sequential resonant tunneling in the electric field of the GaAs p-i-n junction, is calculated. A microscopic model of resonant-tunneling transport in such structures is constructed, and the kinetic tunneling times are calculated depending on well and barrier parameters. The possibility of achieving sufficiently short (<～10 ps) tunneling times and, hence, quite efficient removal of photoelectrons and photoholes from quantum wells at a proper choice of barrier powers is shown.     

Experimental investigation of the oscillator strength of the exciton transition in GaAs single quantum wells

A technique that makes it possible to investigate the mechanisms of phase relaxation of excitons in GaAs single quantum wells has been developed using resonant reflection spectroscopy. The dependence of the oscillator strength of the exciton transition on the quantum well thickness has been measured in the thickness range 9.1–30.0 nm. It has been demonstrated that the oscillator strength with a high accuracy does not depend on the temperature in the range 8–90 K. The temperature dependence of the homogeneous broadening has been measured, and the inhomogeneous broadening of the resonance exciton line has been determined. A nonmonotonic dependence of the spectral broadening of the exciton line on the intensity of the resonant excitation at a temperature of 8 K has been revealed for the sample with a high-quality quantum well. It has been established that an increase in the excitation level by five orders of magnitude above the linear limit leads to an insignificant change in the oscillator strength of the exciton transition and to a multiple broadening of the spectral line profile.     

Theoretical study of the KLL dielectronic recombination for highly charged iodine ions

With a developed program for calculation of dielectronic recombination (DR) process, which is based on multi-configuration Dirac-Fock (MCDF) method, the KLL DR processes of the highly charged helium-like to carbon-like iodine ions have been studied systematically. The contributions to doubly excited states from quantum electrodynamic (QED) and Breit effects have been discussed. The KLL DR resonant energies and corresponding resonant strengths have been calculated. The behavior of KLL resonant strengths with increasing Z are analyzed for He-like ions in particular. The theoretical DR spectra for each highly charged ion species are obtained in the KLL region. Comparison has been made between the present calculations and the latest experiments in Tokyo-EBIT.     

Study of nonlinear absorption in GaAs/AlGaAs multiple quantum wells using the reflection Z-scan

The room-temperature third order nonlinearities in GaAs/AlGaAs multiple quantum wells have been studied using reflection Z-scan technique. Band-filling effect is considered to be the major nonlinear mechanism of the nonlinear absorption. A model to calculate the absorption coefficient of quantum wells in the nonlinear regime is presented.      

Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga_1−xAl_xAs quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.     

Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells

We have developed a theory of the longitudinal g-factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole g-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, lh1, to the first excited heavy-hole subband, hh2, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of lh1 and hh2 states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.     

Scattering and bound states of a nonrelativistic neutral spin-1/2 particle in a magnetic field

We have investigated the scattering and bound states of a nonrelativistic spin-1/2 particle in the system ofN magnetic barriers (or magnetic wells) andN magnetic delta functions. We have studied three types of problems: tunnelling with spin, band structure and change of polarization during transmission and reflection.     

Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 − x Ge x /Si structures

The dynamics of the phase transition from an electron-hole plasma to an exciton gas is studied during pulsed excitation of heterostructures with Si_{1 ? x} Ge _x /Si quantum wells. The scenario of the phase transition is shown to depend radically on the germanium content in the Si_{1 ? x} Ge _x layer. The electron-hole system decomposes into a rarefied exciton and a dense plasma phases for quantum wells with a germanium content x = 3.5% in the time range 100–500 ns after an excitation pulse. In this case, the electron-hole plasma existing in quantum wells has all signs of an electron-hole liquid. A qualitatively different picture of the phase transition is observed for quantum wells with x = 9.5%, where no separation into phases with different electronic spectra is detected. The carrier recombination in the electron-hole plasma leads a gradual weakening of screening and the appearance of exciton states. For a germanium content of 5–7%, the scenario of the phase transition is complex: 20–250 ns after an excitation pulse, the properties of the electron-hole system are described in terms of a homogeneous electron-hole plasma, whereas its separation into an electron-hole liquid and an exciton gas is detected after 350 ns. It is shown that, for the electron-hole liquid to exist in quantum wells with x = 5–7% Ge, the exciton gas should have a substantially higher density than in quantum wells with x = 3.5% Ge. This finding agrees with a decrease in the depth of the local minimum of the electron-hole plasma energy with increasing germanium concentration in the SiGe layer. An increase in the density of the exciton gas coexisting with the electron-hole liquid is shown to enhance the role of multiparticle states, which are likely to be represented by trions T ⁺ and biexcitons, in the exciton gas.     

Complex random matrix models with possible applications to spin-impurity scattering in quantum Hall fluids

We study the one-point and two-point Green functions in a complex random matrix model to sub-leading orders in the large-N limit. We take this complex matrix model as a model for the two-state scattering problem, as applied to spin-dependent scattering of impurities in quantum Hall fluids. The density of state shows a singularity at the band center due to reflection symmetry. We also compute the one-point Green function for a generalized situation by putting random matrices on a lattice of arbitrary dimensions.     

Interwell excitons in GaAs/AlGaAs double quantum wells and their collective properties

Luminescence spectra of interwell excitons in GaAs/AlGaAs double quantum wells with electric-field-tilted bands (n-i-n) structures were studied. In these structures the electron and the hole in the interwell exciton are spatially separated between neighboring quantum wells by a narrow AlAs barrier. Under resonant excitation by circularly polarized light the luminescence line of the interwell excitons exhibited appreciable narrowing as their concentration increased and the degree of circular polarization of the photoluminescence increased substantially. Under resonant excitation by linearly polarized light the alignment of the interwell excitons increased as a threshold process with increasing optical pumping. By analyzing time-resolved spectra and the kinetics of the photoluminescence intensity under pulsed excitation it was established that under these conditions the rate of radiative recombination increases substantially. The observed effect occurs at below-critical temperatures and is interpreted in terms of the collective behavior of the interwell excitons. Studies of the luminescence spectra in a magnetic field showed that the collective exciton phase is dielectric and in this phase the interwell excitons retain their individual properties.     

Resonant Raman scattering in nanostructures with InGaAs/AlAs quantum dots

Raman scattering by optical phonons in In_xGa_{1 ? x} As/AlAs nanostructures with quantum dots has been studied experimentally for compositions corresponding to x = 0.3?1 under out-resonance conditions. Features due to scattering by GaAs-and InAs-like optical phonons in quantum dots have been detected, and the phonon frequencies have been determined as a function of the dot composition. With increasing excitation energy, a red shift is observed in the frequency of the GaAs-like phonon in quantum dots, which testifies to Raman scattering selective by the size of quantum dots. Under resonant conditions, multiphonon light scattering by optical and interface phonons is observed up to the third order, including overtones of the first-order phonons of InGaAs and AlAs materials and their combinations.     

Wave function(al)s in the large-N limit

The energy spectrum and correlation functions in various quantum theories have been determined within the large-N limit. Here we study the wave functions. Explicit results are presented for a quantum mechanical rotor, invariant under adjoint transformations of U(N), as well as for O(N) invariant vector models in quantum mechanics and quantum field theory.