Effect of CDW and magnetic interactions on the electrons of the manganite systems

We address a model study which includes the co-existence of the charge density wave (CDW) and ferromagnetic interactions in order to explain the colossal magnetoresistance (CMR) in manganites. The Hamiltonian consists of the ferromagnetic Hund's rule exchange interaction between e_g and t_2g spins, Heisenberg core spin interactions and the CDW interaction present in the e_g band electrons. The core electron magnetization, induced e_g electron magnetization and the CDW gap are calculated using Zubarev's Green's function technique and determined self-consistently. The effect of core electron magnetization and the CDW interaction on the induced magnetization as well as on the occupation number in the different spin states of the e_g band electrons are investigated by varying the model parameters of the system like the CDW coupling, the exchange coupling, the Heisenberg coupling and the external field. It is observed that the induced magnetization exhibits re-entrant behaviour and exists within a narrow temperature range just below the Curie temperature. This unusual behaviour of the e_g band electrons will throw some new insights on the physical properties of the manganite systems.     

Thermally and optically induced effects on sub-band gap absorption in nanocrystalline CdSe (nc-CdSe) thin films

Nanocrystalline cadmium selenide (nc-CdSe) thin films have been prepared by thermal evaporation using the inert gas condensation (IGC) technique. Transmission electron microscopy (TEM) studies show that the CdSe nanocrystals (NCs) are spherical in shape. Constant photocurrent method (CPM) is used to determine the value of absorption coefficient in low absorption region of as-deposited, annealed and light soaked nc-CdSe thin films. Values of optical band gap (E_g) have been determined by using Tauc's relation for as-deposited, annealed and light soaked nc-CdSe thin films from the α values evaluated from reflection and transmission measurements. We have used a derivative procedure to sub-gap absorption spectra in order to get information on the energetic distribution of the occupied density of states below Fermi level. Constants such as optical gap E_g, Urbach edge E_u have been obtained from CPM spectra in as-deposited, annealed and light soaked nc-CdSe thin films. Concentration of defect states has also been calculated in as-deposited, annealed and light soaked nc-CdSe thin films.     

Electron density profile at the interface of SiO2/Si(0 0 1)

In this report we present grazing incidence X-ray reflectivity (GIXR) study of SiO₂/Si(0 0 1) system. We have analysed the X-ray reflectivity data using recursive formalism based on matrix method and distorted wave Born approximation (DWBA). From the analysis of the reflectivity data we could obtain the electron density profile (EDP) at the interface of the dielectric SiO₂ film and the Si(0 0 1) substrate. The EDP obtained from the matrix method follows the DWBA scheme only when two transition layers are considered at the interface of SiO₂/Si. The layer which is in proximity with the Si substrate has a higher electron density value than the Si and SiO₂ values and it appears as a maximum in the EDP. The layer which is in proximity with the dielectric SiO₂ layer has an electron density value lower than the SiO₂ value and it appears as a minimum in the EDP. When the thickness of the SiO₂ layer is increased the lower density layer diminishes and the higher density layer persists.     

Field Effect in the Linear and Nonlinear Conductivity of the Layered Quasi-One-Dimensional Semiconductor TiS3

Field-effect transistor structures based on whiskers of layered quasi-one-dimensional semiconductor TiS₃ have been fabricated. The dependences of the conductivity σ on the gate voltage V_g, as well as the current-voltage characteristics of whiskers (“source-drain”) at different V_g values, have been measured in the temperature range of 4.2-300 K. As the temperature decreases, the sensitivity of the conductivity to the gate voltage, α ≡ 1/σdσ/dV_g, increases in the range from 300 to 80 K and decreases sharply below 80 K, where the nonlinear conductivity begins to depend on V_g. The results can be explained by the formation of an electronic crystal at low temperatures.

     

Tailoring MoS2 Ultrathin Sheets Anchored on Graphene Flexible Supports for Superstable Lithium‐Ion Battery Anodes

2D MoS₂ has a significant capacity decay due to the stack of layers during the charge/discharge process, which has seriously restricted its practical application in lithium‐ion batteries. Herein, a simple preform‐in situ process to fabricate vertically grown MoS₂ nanosheets with 8–12 layers anchored on reduced graphene oxide (rGO) flexible supports is presented. As an anode in MoS₂/rGO//Li half‐cell, the MoS₂/rGO electrode shows a high initial coulomb efficiency (84.1%) and excellent capacity retention (84.7% after 100 cycles) at a current density of 100 mA g^?1. Moreover, the MoS₂/rGO electrode keeps capacity as high as 786 mAh g^?1 after 1000 cycles with minimum degradation of 54 µAh g^?1 cycle^?1 after being further tested at a high current density of 1000 mA g^?1. When evaluated in a MoS₂/rGO//LiCoO₂ full‐cell, it delivers an initial charge capacity of 153 mAh g^?1 at a current density of 100 mA g^?1 and achieves an energy density of 208 Wh kg^?1 under the power density of 220 W kg^?1.     

Carrier transport effects on the photocurrent spectra of an intrinsic GaAs/AlGaAs multiple quantum well with highly doped AlGaAs contact layers

In this study, we demonstrate how electroreflectance (ER) measurements as a function of bias, and of angle of incidence (θ₀), together with bias dependent photocurrent (PC) measurements, can be used to provide understanding of the complex electric field profile and carrier transport effects in a GaAs/Al_0.3Ga_0.7As multiple quantum well (MQW), grown inside n⁺ contact layers. The PC measurements exhibit split excitonic features, the components of which change in strength with the applied bias. The effect is explained by absorption in the front of the MQW stack, with the back of the stack acting as detector. We examine the θ₀-dependence of the ER lineshape, to determine the depth of the layers responsible for each feature. The ER and PC lineshapes and their bias dependence are explained by the unusual electric field profile across the stack. The field profile appears to be determined by tunnelling of the dark current.     

Coulomb effects in spatially separated electron and hole layers in coupled quantum wells

We report on the (magneto-) optical study of many-body effects in spatially separated electron and hole layers in GaAs/Al_xGa_1?x As coupled quantum wells (CQWs) at low temperatures (T = 1.4 K) for a broad range of electron-hole (e-h) densities. Coulomb effects were found to result in an enhancement of the indirect (interwell) photoluminescence (PL) energy with increasing the e-h density both for a zero magnetic field and at high fields for all Landau level transitions; this is in contrast to the electron-hole systems in single QWs where the main features are explained by the band-gap renormalization resulting in a reduction of the PL energy. The observed enhancement of the ground state energy of the system of the spatially separated electron and hole layers with increasing the e-h density indicates that the real space condensation to droplets is energetically unfavorable. At high densities of separated electrons and holes, a new direct (intrawell) PL line has been observed: its relative intensity increased both in PL and in absorption (measured by indirect PL excitation) with increasing density; its energy separation from the direct exciton line fits well to the X ^? and X ⁺ binding energies previously measured in single QWs. The line is therefore attributed to direct multiparticle complexes.     

Charge transfer effects on the Fermi surface of Ba0.5K0.5Fe2As2

Ab‐initio calculations within density functional theory are performed to obtain a more systematic understanding of the electronic structure of iron pnictides. As a prototypical compound we study Ba_0.5K_0.5Fe₂As₂ and analyze the changes of its electronic structure when the interaction between the Fe₂As₂ layers and their surrounding is modified. We find strong effects on the density of states near the Fermi energy as well as the Fermi surface. The role of the electron donor atoms in iron pnictides thus cannot be understood in a rigid band picture. Instead, the bonding within the Fe₂As₂ layers reacts to a modified charge transfer from the donor atoms by adapting the intra‐layer Fe‐As hybridization and charge transfer in order to maintain an As^3‐ valence state.     

Preparation of Co<Subscript>3</Subscript>O<Subscript>4</Subscript> hollow microsphere/graphene/carbon nanotube flexible film as a binder-free anode material for lithium-ion batteries

A flexible Co₃O₄ hollow microsphere/graphene/carbon nanotube hybrid film is successfully prepared through a facile filtration strategy and a subsequent thermally treated process. The composition, morphology, and structure of the as-prepared film are characterized by X-ray diffraction, X-ray photoelectron spectrometer, scanning electron microscopy, and transmission electron microscopy. Based on the morphology characterizations on the hybrid film, the Co₃O₄ hollow microspheres are uniformly and closely attached on three-dimensional (3D) graphene/carbon nanotubes (GR/CNTs) network, which decreases the agglomeration of Co₃O₄ microspheres effectively. In this hybrid film, the 3D GR/CNT network which enhances conductance as well as prevents aggregation is a benefit to help Co₃O₄ to exert its lithium storage capabilities sufficiently. When used as a binder-free anode material for lithium-ion batteries, the hybrid film delivers excellent electrochemical properties involving reversible capacity (863 mAh g^?1 at a current density of 100 mA g^?1) and rate performance (185 mAh g^?1 at a current density of 1600 mA g^?1).     

Dependence of electron spin g-factor on magnetic field in quantum wells

The dependence of electron spin g-factor on magnetic field has been investigated in GaAs/AlGaAs quantum wells. We have estimated the electron g-factor from spin precession frequency in time-resolved photoluminescence measurements under a magnetic field in different configurations; the magnetic field perpendicular (g_⊥) and parallel (g_∥) to the quantum confinement direction. When the angle between the magnetic field and the confinement direction is 45°, we have found that g-factor varies depending on the direction of magnetic field and the circular polarization type of excitation light (σ⁺ or σ^?). These dependences of g-factor exhibit main features of Overhauser effect that nuclear spins react back on electron spin precession. The value of g_⊥ and g_∥ corrected for the nuclear effects agree well with the results of four-band k·p perturbation calculations.     

Structure Dependence of Fe‐Co Hydroxides on Fe/Co Ratio and Their Application for Supercapacitors

Fe‐Co hydroxides with different Fe/Co atomic ratios grown on nickel foams are synthesized by one‐step electrochemical deposition. The prepared samples are characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy. It was found that the influence of initial Fe/Co ratios in the precursor solutions on the structure and electrochemical performance of electrodeposited products is significant. Fe(OH)₃ shows particle shape with average diameter of 200 nm. With addition of Co ions, frame‐like structure consisting of smaller particles is formed for Fe‐Co hydroxides. Based on the morphology of Co(OH)₂, it is deduced that Co(OH)₂ serves as a network former constructing a tridimensional frame network structure. Fe‐Co hydroxide with Fe/Co ratio of 1:1 exhibits two types of structure features: nanoflake‐like network structure overall and nanoparticle structure with numerous mesoporous microscopically. As the supercapacitor electrode materials, the as‐prepared Fe‐Co hydroxide electrode with Fe/Co ratio of 1:1 exhibits highest specific capacitance of 2255.6 F g^?1 at the current density of 1 A g^?1 and also shows good cycling performance of 73.5% capacity retention at current density of 10 A g^?1 after 2000 cycles. This work provides a facile method to produce promising Fe‐Co hydroxide electrode materials with high performance for supercapacitors.     

A tunneling spectroscopy study of the temperature dependence of the forbidden band in Bi2Te3 and Sb2Te3

Tunneling measurements of dI/dV, d ² I/dV ², and d ³ I/dV ³ were formed along the C ₃ axis (normally to layers) for Bi₂Te₃ and Sb₂Te₃ layered semiconductors in the temperature range 4.2<T>29 5 K. Temperature dependences of the forbidden band energy E _g were obtained. The forbidden band energy in Bi₂Te₃ was 0.20 eV at room temperature and increased to 0.24 eV at T=4.2 K. The E _g value for Sb₂Te₃ was 0.25 eV at 295 K and 0.26 eV at 4.2 K. The distance between the top of the higher valence band of light holes and the top of the valence band of heavy holes situated lower was found to be ΔE _V≈19 meV in Bi₂Te₃; this distance was independent of temperature. The conduction bands of Bi₂Te₃ and Sb₂Te₃ each contain two extrema with distances between them of ΔE _c≈25 and 30 meV, respectively.     

Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

The growth of high-quality stacked quantum dot (QD) structures represents one of the key challenges for future device applications. Electronic coupling between QDs requires closely separated electronic levels and thin barrier layers, requiring near identical composition and shape, despite strong strain interactions. This paper presents a detailed characterization study of stacked InGaAs QD and InAs/InGaAs dot-in-well (DWELL) structures using cross-sectional transmission electron microscopy. For In_.5Ga_.5As/GaAs QD structures we have observed optimized stacking using a barrier thickness 12 nm.We also report studies of stacking in DWELL laser structures. Despite reports of very low threshold currents in such lasers, designed for 1.3 μm emission, performance is limited by gain saturation and thermal excitation effects. We have explored solutions to these problems by stacking multiple DWELL layers of three, five and 10 repeats. Initial attempts at stacked multilayer structures, particularly samples with a large number of repeats, produced variable results, with a number of the final devices characterized by poor emission and electrical characteristics. Analysis by transmission electron microscopy has identified the presence of large defective regions arising from the complex interaction of dots on several planes and propagating threading dislocations into the cladding layers. The origin of this defect is identified as the coalescence of QDs at very high density and the resulting dislocation propagating to higher dot planes. An effective modified method to reduce the defect density by growing the barrier layer at higher temperature will be discussed. Finally, we report the growth of a stacked 10-layer structure using relatively thin barriers, grown using this technique.     

Formation of solitary structures and envelope solitons in electron acoustic wave in inner magnetosphere plasma with suprathermal ions

The propagation of electron acoustic solitary waves is investigated in magnetized two-temperature electron plasma with supra-thermal ion. By using the reductive perturbation technique, the Korteweg de-Vries (KdV) equation is derived. Later solving this equation, a solitary wave solution has been derived. These are mainly in astrophysical plasmas where changes of local charge density, temperature, and energy of particles produce considerable effects on the plasma system. The effects of supra-thermality, density, and Mach number on solitary structures are studied in detail. The results show that the supra-thermal index (κ) and ion to electron temperature ratio (σ) alters the regime where solitary waves may exist. While studying the solitary profile for different parametric variation some interesting conclusion can be drawn; it is shown that the solitary profile becomes flatter. This can be due to the thermal energy associated with the hot electrons. However, with the increase in ion density with respect to the cold electrons' density, the solitary waves become steeper and sharper. This is due to the comparatively heavier mass of ions. The density of cold electron also increases the solitary structures in a similar manner. The higher the density of cold electrons, sharper will be the profile. The above findings will be helpful in understanding many astrophysical phenomena and data obtained by space missions. For a further study, we keep the investigation of the formation of other kinds of stationary structures like shocks, double layers, etc.     

Lattice vibrations in the orthorhombic commensurate charge density wave phase of 2H-TaSe2

Lattice vibrations in 2H-TaSe₂ have been reinvestigated by Raman scattering in view of the recent orthorhombic structure of the commensurate charge density wave (CCDW) phase. The renormalization of six charge density waves on two layers gives four A_g modes and two B_1g modes in the orthorhombic CCDW phase, in place of two A_1g modes and two E_2g modes in the hexagonal CCDW phase which had been believed. The splitting of the E_2g modes to the A_g and B_1g modes in the orthorhombic symmetry depends on the interlayer interaction. The observed small splitting less than 3 cm^-1 shows the weak interlayer interaction. The energies of the four A_g modes and the two B_1g modes are presented as a function of temperature.     

Density and impurity profile behaviours in HL-2A tokamak with different gas fuelling methods

The electron density profile peaking and the impurity accumulation in the HL-2A tokamak plasma are observed when three kinds of fuelling methods are separately used at different fuelling particle locations. The density profile becomes more peaked when the line-averaged electron density approaches the Greenwald density limit n_G and, consequently, impurity accumulation is often observed. A linear increase regime in the density range n_e< 0.6n_G and a saturation regime in n_e > 0.6n_G are obtained. There is no significant difference in achieved density peaking factor f_ne between the supersonic molecular beam injection (SMBI) and gas puffing into the plasma main chamber. However, the achieved f_ne is relatively low, in particular, in the case of density below 0.7n_G, when the working gas is puffed into the divertor chamber. A discharge with a density as high as 1.2n_G, i.e. n_e = 1.2n_G, can be achieved by SMBI just after siliconization as a wall conditioning. The metallic impurities, such as iron and chromium, also increase remarkably when the impurity accumulation happens. The mechanism behind the density peaking and impurity accumulation is studied by investigating both the density peaking factor versus the effective collisionality and the radiation peaking versus density peaking.     

Bond stretching phonon anomalies due to incommensurate charge density wave instabilities in high-Tc cuprates

Phonon anomalies observed in various high T_c cuprates are analyzed theoretically within the Hubbard-Holstein model in the limit of strong local electron correlations and in presence of long-range Coulomb interaction. The phonon self-energy is evaluated by taking into account the charge collective modes that become critical upon doping approaching an instability towards an incommensurate charge density wave (ICDW) driven by electron correlations. The doping dependence of phonon softening features and the highly distinctive phonon self-energy dependence on the wave vector agree with experiments. We discuss relevance of dynamical corrections to the density correlation function to achieve a sizeable bond-stretching phonon softening with a kink-like profile away from the zone boundary.     

Controlling the charging energy of arrays of tunnel junctions

We describe a new technique to control in situ charging energy of systems of coupled metallic or superconducting islands. To illustrate the technique, we have fabricated two-dimensional arrays of Al islands on GaAs/AlAs heterostructures. Each island is coupled to its nearest-neighbor by a submicron Al/AlO_x/Al tunnel junction and to the three-dimensional electron gas (3DEG) located below the surface of the heterostructure by a capacitance C_g. We vary C_g, which dominates the charging energy of the array, by depleting the electrons in the 3DEG by means of a negative voltage applied to the array. With the array driven normal by a magnetic field, a decrease in C_g increases in both the offset voltage and the period of the Coulomb blockade oscillations.     

Plasmon and magneto-plasmon excitations in double heterostructures

The plasmon and magneto-plasmon spectra are analyzed for an electron system which consists of two parallel two-dimensional electron layers which are separated from each other by a certain distance2d. Our approach allows to consider these electron liquids to be on different levelsE ₁ andE ₂ and to regard an arbitrary tunneling probabilityt between them. The Coulomb interaction is treated by means of a random-phase approximation. The resulting modes reflect typical features of the system: there are different plasmon branches connected with either the total or the reduced charge density and a further collective mode consisting of electron transitions from one to another electron layer. The influence of a static external magnetic fieldB applied perpendicularly to the electron layers leads to characteristic combinations of the plasmon modes (forB=0) with the cyclotron frequency _c .     

Study of J-T effect on the self-energy of electrons in manganite systems

We present here a theoretical study of the effect of Jahn-Teller(J-T) distortion on the self-energy of electrons in the CMR manganites. The model consists of the itinerant e _g electrons distorted by J-T effect and the localized t _2g core electrons carrying strong ferromagnetism due to Hund’s rule. The phonon interacts with the e _g electrons as well as the J-T distorted e _g band. The electron Green’s functions are calculated by Zubarev’s technique. The electron self-energy which carries all the information of the model is calculated from the Green’s function. The effect of J-T distortion, magnetism on the frequency and temperature dependent dynamic self-energy is presented in this paper. The results are discussed.