Magnetic-field dependence of hydrogenic impurity states in a quantum well wire

Summary The binding energy for on-centre impurities in a rectangular quantum well wire is calculated as a function of the width of the wire and perpendicular magnetic field. The results for zero-magnetic-field case are in perfect agreement with previous calculations. The authors of this paper have agreed to not receive the proofs for correction.     

Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.     

Bound states in continuum: Quantum dots in a quantum well

We report on the existence of a bound state in the continuum (BIC) of quantum rods (QR). QRs are novel elongated InGaAs quantum dot nanostructures embedded in the shallower InGaAs quantum well. BIC appears as an excited confined dot state and energetically above the bottom of a well subband continuum. We prove that high height-to-diameter QR aspect ratio and the presence of a quantum well are indispensable conditions for accommodating the BIC. QRs are unique semiconductor nanostructures, exhibiting this mathematical curiosity predicted 83 years ago by Wigner and von Neumann.     

d-band quantum well states

Observations of d-band quantum well states are made for atomically uniform Ag films on Fe(100) using angle-resolved photoemission. For increasing film thicknesses, quantum well peaks within the small 4d bandwidth multiply rapidly and merge into a bulklike spectrum at approximately 25 monolayers. An analysis of the peak positions yields a highly accurate bulk band structure of Ag. A very narrow d-band peak width (13 meV) is observed at the band top.     

Quantum dots in quantum well structures

Recent progress toward fabricating and characterizing quantum dots in III–V quantum well structures is reviewed. Quantum dots made by use of lithography and etching, including deep-etched, barrier-modulated, strain-induced and interdiffused quantum dots, are described. Quantum dots fabricated by growth, including natural quantum dots, dots on patterned substrates, and self-assembled dots, are discussed. Dot sizes and uniformity, energy-level splittings, and luminescence efficiencies that are now being achieved are discussed. The status of key issues, such as the energy relaxation in quantum dots, is mentioned.     

Metal-induced gap states at well defined alkali-halide/metal interfaces

In order to search for states specific to insulator/metal interfaces, we have studied epitaxially grown interfaces with element-selective near edge x-ray absorption fine structure. An extra peak is observed below the bulk edge onset for LiCl films on Cu and Ag substrates. The nature of chemical bonds as probed by x-ray photoemission spectroscopy and Auger electron spectroscopy remains unchanged, so we regard this as evidence for metal-induced gap states (MIGS) formed by the proximity to a metal, rather than local bonds at the interface. The dependence on the film thickness shows that the MIGS are as thin as one monolayer. An ab initio electronic structure calculation supports the existence of the MIGS that are strongly localized at the interface.     

Quantum states and potentialities of quantum systems

In a previous article it was shown that in general quantum states represent perspectives on the potentialities of quantum systems, rather than the potentialities themselves. In the present paper the following questions are investigated in the context of this result: (1) How do quantum states which undergo collapse transform under pure translations? (2) Under what conditions do quantum states represent the potentialities themselves? Two alternatives are presented in response to the first question: (1) Quantum states are scalars under translations. (2) The collapse of a quantum state propagates between frames of reference at the speed of light. The advantages and disadvantages of the two alternatives are discussed. The response to the second question is shown to depend on the chosen alternative. In addition, the second alternative is shown to lead to a consistent view of quantum states as “potential perspectives on potentialities.”     

Quantum distributions for localized quantum states

The principle of ergodicity of the quantum theory has been used for elaboration of a new technique for numerical simulation of the Wigner function of open dissipative quantum systems. With this purpose the density matrix of a quantum system is represented via averaging over the ensemble of quantum states in time intervals instead of averaging over the ensemble of stochastic variables. It is shown that this approach leads to new approximate expressions for quantum distributions in the phase space, in particular, Wigner functions for systems localized in the region of classical phase trajectories. As an application, the Wigner functions are calculated for the process of intracavity second harmonic generation in the region of Hopf bifurcations.     

Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Quasibound states in semiconductor quantum well structures

We present a study on quasibound states in multiple quantum well structures using a finite element model (FEM). The FEM is implemented for solving the effective mass Schrödinger equation in arbitrary layered semiconductor nanostructures with an arbitrary applied potential. The model also includes nonparabolicity effects by using an energy dependent effective mass, where the resulting nonlinear eigenvalue problem was solved using an iterative approach. We focus on quasibound/continuum states above the barrier potential and show that such states can be determined using cyclic boundary conditions. This new method enables the determination of both bound and quasibound states simultaneously, making it more efficient than other methods where different boundary conditions have to be used in extracting the relevant states. Furthermore, the new method lifted the problem of quasibound state divergence commonly seen with many other methods of calculation. Hence enabling accurate determination of dipole matrix elements involving both bound and quasibound states. Such calculations are vital in the design of intersubband optoelectronic devices and reveal the interesting properties of quasibound states above the potential barriers.     

基于量子图态的量子秘密共享

本文基于量子图态的几何结构特征,利用生成矩阵分割法,提出了一种量子秘密共享方案.利用量子图态基本物理性质中的稳定子实现信息转移的模式、秘密信息的可扩展性以及新型的组恢复协议,为安全的秘密共享协议提供了多重保障.更重要的是,方案针对生成矩阵的循环周期问题和因某些元素不存在本原元而不能构造生成矩阵的问题提出了有效的解决方案.在该方案中,利用经典信息与量子信息的对应关系提取经典信息,分发者根据矩阵分割理论获得子秘密集,然后将子秘密通过酉操作编码到量子图态中,并分发给参与者,最后依据该文提出的组恢复协议及图态相关理论得到秘密信息.理论分析表明,该方案具有较好的安全性及信息的可扩展性,适用于量子网络通信中的秘密共享,保护秘密数据并防止泄露.     

Hybrid stable-chaotic states in coupled quantum well stadia

We use tunnel current spectroscopy to investigate the quantum states of two GaAs quantum wells coupled by a low (100 meV) (AlGa)As tunnel barrier. A high tilted magnetic field is used to generate strongly chaotic electron motion in the two wells which act as coupled chaotic ‘stadia'. The effect of the tunnel barrier on the dynamics of the system depends on the magnitude of the applied bias voltage V. For V375 mV, the central potential barrier acts as a perturbation which modifies the trajectories of selected periodic orbits in the quantum well. Scattering off the central barrier also generates new periodic orbits involving multiple collisions on all three barriers. These orbits ‘scar' distinct sets of eigenstates which generate periodic resonant peaks in the current–voltage characteristics of the device. When the device is biased such that the injected electrons just surmount the central barrier, our calculations reveal novel hybrid scarred states with both stable and chaotic characteristics.     

Impurity bound states in a compensated quantum well

A detailed study of the bound-state properties of an impurity in a compensated semiconductor quantum well is presented using the screened potential of a minority impurity ion in a compensated semiconductor due to Schechter (1981). Accurate eigenenergies for the first 15 states are obtained for this potential as a function of the screening parameter λ by numerical integration of the two-dimensional (2D) Schrödinger equation. The energies are found to decrease with increasing values of the screening parameter λ in all cases. The variation of splitting between adjacent levels for the same value of n with the screening parameter is also studied.     

Quantization of electronic states on metal surfaces

An electron in front of a metal surface experiences an attractive force due to the induced image charge. Band gaps in the band structure can prevent a penetration into the metal along certain directions. The Coulomb-like potential supports bound states in front of the surface which correspond to a hydrogen atom in one dimension. These image states can be measured with high resolution by two-photon photoemission. The adsorption of metals modifies the states. If the electrons can penetrate into the metal, quantum-well states can develop corresponding to standing waves in the overlayer. Image states on small islands show the quantization effects due to the lateral localization. The spectroscopy of image states by two-photon photoemission permits the investigation of growth and morphology of deposited metal layers, a well as the illustration of fundamental quantum-mechanical effects.     

Excitons in quantum well wires: V-shaped wire,T-shaped wire and strain-induced lateral confinement

Il Nuovo Cimento D - We calculated the energy and the wave function of the exciton for i) a V-shaped quantum wire, ii) a T-shaped quantum wire and iii) a quantum wire resulting from strain-induced...