晶场二级效应与交换作用对PrF3晶体磁性及磁光性质的影响

研究了晶场二级效应在PrF₃晶体中的作用，发现该效应可使Pr³⁺离子的晶场单态与其他态混合，对PrF₃晶体磁化率产生明显影响.进一步研究了晶体内的交换作用有效场，其形式为H_in=(1.9-0.02556T)×10^-5M，在100—300 K的温度范围内，以此计算的PrF₃晶体的倒数磁化率和Verdet常数的倒数与实验值符合较好.结果表明，在PrF₃晶体中，晶场二级效应与离子间的交换作用都不能忽略. 关键词： 晶场二级效应 交换作用有效场 Verdet常数 3晶体')" href="#">PrF₃晶体     

Yb3+:Gd2SiO5晶体的结构和光谱性能

采用提拉法成功生长尺寸为φ30 mm× 75 mm的15at.%Yb³⁺:Gd₂SiO₅单晶, 并用Reitveld全谱拟合方法确定了其晶格常数、原子坐标和温度因子等参数. 用吸收光谱计算了Yb³⁺离子²F_7/2↔ ²F_5/2能级跃迁的振子强度、谱线强度、跃迁概率、 能级寿命和积分发射截面等光谱参数, 并根据激光性能评估得出结论: 表明该晶体具有较大的阈值特性, 有望采用大功率激光二极管泵浦实现可调谐或超快激光输出.     

Low-temperature phase transition in Ba2TiGe2O8

Previous work on Ba₂TiGe₂O₈ crystals has shown an unusual low-temperature (～ 223 K on cooling, ～ 273 K on heating) phase transition. Precession x-ray photographs on Ba₂TiGe₂O₈ single crystals show an incommensurate modulation along b*, and, for the first time, also along a*. Single crystal intensity data confirm the average structure in space group Cmm2. There is positional disorder in the pyrogermanate groups, and this is the probable cause for the modulated structure. The low-temperature phase transition is proposed to be a lock-in transition, with the modulation along a* locking in at a value of 1/3. Several properties, as well as other unusual features of the low-temperature phase transition, are discussed in light of the proposed lock-in transition. Domain studies show that the ferroelastic domains are unstable in the low-temperature phase.     

Infrared active phonon modes and ionicity of single crystal MgAl2O4

Near-normal incident infrared reflectivity spectra of （100） MgAl2O4 spinel single crystal have been measured at different temperatures in the frequency region between 50 and 6000 cm^-1. Eight infrared-active phonon modes are identified, which are fitted with the factorized form of the dielectric function. The dielectric property and optical conductivity of the MgAl2O4 crystal are analysed. From TO/LO splitting, the effective Szigeti charges and Born effective charges at different temperatures are calculated for studying the ionicity and the effect of polarization. Based on the relationship between the （LO-TO）1 splitting, which represents the transverse and longitudinal frequencies splitting of the highest energy phonon band in the reflectivity spectrum, and the ionic-covalent parameter, the four main phonon modes are assigned. MgA1204 can be considered as a pure ionic crystal and its optical characters do not change with decreasing temperature, so it may be used as a suitable substrate for high-Tc superconducting thin films.     

Structural and physical properties of undoped and nickel-doped BaFe2-xNixAs2（x = 0,0.04） single crystals

<正>Single crystals of undoped and nickel-doped BaFe_(2-x)Ni_xAs_2(x=0,0.04) have been grown by FeAs self-flux method.The maximum dimension of the crystal is as large as ~ 1 cm along the ab plane.The crystalline topography of a cleaved crystal surface is examined by scanning electron microscope(SEM).By x-ray powder diffraction(XRD) experiments using pure silicon as an internal standard,precise unit cell parameters(tetragonal at room temperature) are determined:a = 3.9606(4) A(1 A=0.1 nm),c = 13.015(2) A for BaFe_(1.96)Ni_(0.04)As_2 and a = 3.9590(5) A,c = 13.024(1) A for BaFe_2As_2.DC magnetization and transport measurements are performed to check superconducting transition(T_c=15 K for x=0.04) and other subtle anomalies.For BaFe_(0.96)Ni_(0.04)As_2 crystal,the resistance curve at normal state shows two distinct anomalies associated with spin and structure transitions,and its magnetization data above ~ 91 K exhibit a linear temperature dependence due to spin density wave(SDW) instability.     

Investigation of the optoelectronic properties of columbite ZnNb2O6 crystal

A high-quality ZnNb₂O₆ single-crystal grown by optical floating zone method has been used as a research prototype to analyze the optoelectronic parameters by measuring the absorption coefficient and transmittance spectra along the b-axis from 200 nm to 1000 nm at room temperature. The optical interband transitions of ZnNb₂O₆ have been determined as a direct transition with a band gap of 3.84 eV. The refractive index, extinction coefficient, and real and imaginary parts of the complex dielectric constants as functions of the wavelength for ZnNb₂O₆ crystal are obtained from the measured absorption coefficients and transmittance spectra. In the Urbach tail of 3.16–3.60 eV, the validity of the Cauchy–Sellmeier equation has also been evaluated. Using the single effective oscillator model, the oscillator energy E_o is found to be 4.77 eV. The dispersion energy E_d is 26.88 eV and ZnNb₂O₆ crystal takes an ionic value.     

Study of the In2O3 molecule in the free state and in the crystal

ABSTRACT

The nanomaterials based on the In₂O₃ molecule are widely used as catalysts and sensors among other applications. In the present study, we discuss the possibility of using nanoclusters of In₂O₃ as molecular photomotors. A comparative analysis of the electronic structure of the In₂O₃ molecule in the free state and in the crystal is performed. For the free In₂O₃ molecule the geometry of its lowest structures, V-shape and linear, was optimised at the CCSD(T) level, which is the most precise computational method applied up to date to study In₂O₃. Using experimental crystallographic data, we determined the geometry of In₂O₃ in the crystal. It has a zigzag, not symmetric structure and possesses a dipole moment with magnitude slightly smaller than that of the V-structure of the free molecule (the linear structure due to its symmetry has no dipole moment). According to the Natural Atomic population analysis, the chemical structure of the linear In₂O₃ can be represented as O = In?O?In = O; the V-shaped molecule has the similar double- and single-bond structure. The construction of nanoclusters from ?bricks? of In₂O₃ with geometry extracted from crystal (or nanoclusters extracted directly from crystal) and their use as photo-driven molecular motors are discussed.     

MgF2单晶的THz光谱研究

利用THz时域光谱技术对MgF₂晶体(样品1)和MgF₂：Co晶体(样品2)在0.5—2.5 THz的吸收特性进行了研究.在0.5—2.5 THz波段，样品1吸收系数α(ν)随频率ν增加而增大，最大值为24 cm^-1.样品2的吸收系数比样品1大得多，Co掺杂使晶格吸收带边向低频移动，而且样品2在1.9 THz有吸收峰，吸收系数达到70 cm^-1，由此求出F^--Co²⁺离子键伸缩振动的键力常数K为3.40×10^-2　N/cm.这一结果表明，THz光谱分析有可能成为研究晶体化学键的一种重要手段.利用光学常数之间的关系计算了两个样品在0.5—2.5 THz的介电函数的实部ε₁(ν)，得到样品1的ε₁(ν)值在4.67至4.73之间，样品2的ε₁(ν)值在4.62至5.01之间. 关键词： THz辐射 光谱 2晶体')" href="#">MgF₂晶体     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

基于周期极化KTiOPO$lt;sub$gt;4$lt;/sub$gt;晶体的高亮度纠缠源研制

量子纠缠是量子信息领域的核心资源,目前利用β型硼酸钡（BBO）晶体参量下转换制备的纠缠光子对的亮度较低,它直接制约了量子通信的最远距离,已无法满足星地实用化量子通信的发展需求.利用周期极化KTiOPO₄晶体,采用准相位匹配技术设计产生了一种后选择的纠缠源,测得的符合计数达到了16×10³s^-1 mW^-1,极化对比度达到27∶1,在亮度上比基于BBO的量子纠缠光源提高了一个数量级以上.这一高亮度的纠缠源可以广泛应用于量子密钥分发、量子隐形传态以及量子计算等新兴量子信息领域,为实现全球化量子通信提供了有力的保障. 关键词： 纠缠态 准相位匹配 4晶体')" href="#">周期极化KTiOPO₄晶体     

Method for fitting crystal field parameters and the energy level fitting for Yb3+ in crystal Sc2O3

<正>A method to compute the numerical derivative of eigenvalues of parameterized crystal field Hamiltonian matrix is given,based on the numerical derivatives the general iteration methods such as Levenberg-Marquardt,Newton method, and so on,can be used to solve crystal field parameters by fitting to experimental energy levels.With the numerical eigenvalue derivative,a detailed iteration algorithm to compute crystal field parameters by fitting experimental energy levels has also been described.This method is used to compute the crystal parameters of Yb~(3+) in Sc_2O_3 crystal, which is prepared by a co-precipitation method and whose structure was refined by Rietveld method.By fitting on the parameters of a simple overlap model of crystal field,the results show that the new method can fit the crystal field energy splitting with fast convergence and good stability.     

Third harmonic generation of CO2 laser radiation in AgGaSe2 crystal

Generation of third harmonic of CO₂ laser radiation has been obtained in a type-II, ϑ=57° cut 9 mm thick AgGaSe₂ crystal for the first time by sum-frequency-mixing of the fundamental with its second harmonic, the latter being obtained using another type-I, ϑ=55° cut 11 mm thick AgGaSe₂ crystal. The energy conversion efficiencies obtained for second harmonic and third harmonic generations are 6.3% and 2.4% respectively with the input fundamental pump power density of 5.9 MW/cm² only. The wavelength of the fundamental CO₂ laser radiation used for the generation of harmonics is 10.6 μm, P(20) line. A compact TEA CO₂ laser source has been built in the laboratory.     

LaSrGaO4 substrate for epitaxial high-Tc superconducting thin films

We have shown lanthanum strontium gallate (LaSrGaO₄) has considerable potential as a substrate material for high-temperature superconducting thin films. We report on the growth and physical properties of LaSrGaO₄ crystal. Single crystals of LaSrGaO₄ have been grown by the Czochralski technique with diameter 32 mm and lengths of 110 mm. We found that this crystal had no structural phase transitions and was twin-free. We show that high-quality epitaxial Y-Ba-Cu-O films can be grown on LaSrGaO₄.     

Ultraviolet laser-induced photovoltaic effects in miscut ferroelectric LiNbO3 single crystals

This paper investigates the photovoltaic properties of miscut LiNbO 3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias.Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples.In accord with the 248 nm laser duration,the full width at half maximum of the photovoltaic signals keeps a constant of ～ 20 ns.With decrease of the crystal thickness,the photovoltaic sensitivity was improved rapidly at first and then decreased,and the maximum photovoltage occurred at 0.38 mm-thick single crystal.The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity.     

Magnetocrystalline anisotropy in RAu2Ge2 (R = La, Ce and Pr) single crystals

Anisotropic magnetic properties of single crystalline RAu₂Ge₂ (R=La, Ce and Pr) compounds are reported. LaAu₂Ge₂ exhibits a Pauli-paramagnetic behaviour whereas CeAu₂Ge₂ and PrAu₂Ge₂ show an antiferromagnetic ordering with Nèel temperatures T_N = 13.5 and 9 K, respectively. The anisotropic magnetic response of Ce and Pr compounds establishes [0 0 1] as the easy axis of magnetization and a sharp spin-flip type metamagnetic transition is observed in the magnetic isotherms with H // [0 0 1]. The transport and magnetotransport behaviour of these compounds, in particular LaAu₂Ge₂, indicate an anisotropic Fermi surface. The magnetoresistivity of CeAu₂Ge₂ apparently reveals the presence of a residual Kondo interaction. A crystal electric field analysis of the anisotropic susceptibility in conjunction with the experimentally inferred Schottky heat capacity enables us to propose a crystal electric field level scheme for Ce and Pr compounds. For CeAu₂Ge₂ our values are in excellent agreement with the previous reports on neutron diffraction. The heat capacity data in LaAu₂Ge₂ show clearly the existence of Einstein contribution to the heat capacity.     

Application of a characterized difference-frequency laser source to carbon monoxide trace detection

A tunable continuous wave(cw) mid-infrared(MIR) laser based on difference-frequency generation(DFG) in a 1.5-cm long AgGaS2 nonlinear crystal for trace gas detection is reported.Two visible and near-infrared diode lasers were used as pump and signal sources.The MIR-DFG laser was tunable in a wavelength range of 4.75 μm-4.88 μm.The phase-matching(PM) condition was non-critically achieved by adjusting the temperature of the crystal for fixed pairs of input pump and signal wavelengths.The required PM temperatures of the generated MIR-DFG wavelengths have been calculated by using three sets of recent Sellmeier equations and the temperature-dispersion equations of AgGaS2 given by Willer U,et al.(Willer U,Blanke T and Schade W 2001 Appl.Opt.40 5439).Then the calculated PM temperatures are compared with the experimental values.The performance of the MIR-DFG laser is shown by the trace detection of the P(16) carbon monoxide(12C16O) absorption line in a laboratory-fabricated absorption cell.The enhanced sensitivity of about 0.6×10 4 was obtained through the long path absorption provided by consecutive reflections between coated cylindrical mirrors of a constructed cell.     

Laser output power over 5 W at 1.06 μm for Nd:GdVO4 single crystal

In this paper, we report the polarization absorption spectra from 400 to 850 nm, polarization emission spectra from 1050 to 1100 nm and laser properties of an Nd:GdVO₄ crystal. An output power of up to 5.29 W at 1.06 μm has been achieved with a 3×3×3 mm Nd:GdVO₄ crystal sample when it is pumped by a cw laser diode.     

掺铑BaTiO3单晶场致应变特性的研究

系统地研究了掺铑的BaTiO₃单晶在老化后的场致应变性能.研究发现，晶体的场 致应变随老化时间的增加而增大，在老化27天后，在300V/mm的电场下，其双向场致应变可达1.11％；在较小的测试频率下（0.01Hz）也可得到0.95％的可逆的巨大的单向场致应变，在低频范围内，晶体的单向场致应变随测试频率增大而减小；研究晶体老化后的电滞回线，发现其 形状类似于蜂腰磁滞回线.实验结果表明，对BaTiO₃单晶掺杂铑元素可以大大改 善其电致伸缩性能，可能产生新的在超大应变及非线性驱动器中的应用. 关键词： 3单晶')" href="#">BaTiO₃单晶 掺铑 场致应变 老化     

Ultraviolet laser-induced voltages in LaSrAlO4 single crystal

Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.