Structure and properties of single crystals of tin-doped potassium titanyl phosphate

Single crystals with the compositions KTi_0.47Sn_0.53OPO₄ and KTi_0.25Sn_0.75OPO₄ were grown by spontaneous crystallization from flux in the K₂O-TiO₂-SnO₂-P₂O₅ quaternary system, and their structures were established from precision X-ray diffraction data. The incorporation of tin into the crystals lowers the asymmetry of cation positions in the (Ti,Sn)O₆ octahedra. The addition of even a small amount (x < 0.4) of tin to the K(Ti_{1 ? x} Sn_x)OPO₄ crystals causes fast symmetrization of the octahedra. The process slows down with an increase in the tin content until the attainment of the composition KSnOPO₄ and localization of tin in the centers of octahedra. It is these structural features that are responsible for a decrease in the optical nonlinearity of the crystals and in the intensity of second harmonic generation by laser radiation in these crystals.     

X-Ray diffraction study of KTiOPO<Subscript>4</Subscript> single crystals doped with hafnium

Single crystals of KTi_{1 − x} Hf _x OPO₄ (x = 0.015(2), 0.035(1), and 0.128(1) are reinvestigated by precision X-ray diffraction at room temperature. It is found that the implantation of hafnium atoms in the crystal structure of KTiOPO₄ does not lead to significant changes in the framework and affects only the positions of the potassium atoms in the channel. Our studies reveal the displacements of the potassium atoms from their main and additional positions in the structure of pure KTP in all three structures studied. The largest displacements from the K1′ and K1″ additional positions are observed in the structure with x = 0.035. At this hafnium concentration, the occupancy of the main positions of potassium atoms decreases and the occupancy of the additional positions increases in relation to those in KTP. This redistribution of potassium atoms enhances the nonuniformity of distribution of the electron density in the vicinity of their positions, which is probably responsible for the increase in the nonlinear susceptibility of KTP crystals that contain 3.5% hafnium in relation to crystals of pure KTP.     

On the effect of structural and symmetrical features of potassium titanyl phosphate crystals with different contents of niobium,antimony, and zirconium on the second-harmonic intensity

A model is proposed, which shows that, at small deviations from the centrosymmetric state of the atomic structure, the quadratic nonlinear susceptibility of a crystal monotonically decreases with approach of the degree of central symmetry \(\eta _{\overline 1 } \)[φ(r)] of the electric potential function of the crystal structure to unity. The quadratic nonlinear susceptibility of K_{1 ? x} Ti_{1 ? x} Nb _x OPO₄ (x = 0, 0.02, 0.04, 0.11), K_{1 ? x} Ti_{1 ? x} Sb _x OPO₄ (x = 0.01, 0.07, 0.17), and KTi_{1 ? x} Zr _x OPO₄ (x = 0.03, 0.04) crystals has been measured. The degree of central symmetry \(\eta _{\overline 1 } \)[φ(r)] has been calculated for the structures of K_{1 ? x} Ti_{1 ? x} Nb _x OPO₄ (x = 0, 0.04, 0.11), K_{1 ? x} Ti_{1 ? x} Sb _x OPO₄ (x = 0.01, 0.07, 0.17), and KTi_{1 ? x} Zr _x OPO₄ (x = 0.03, 0.04) crystals. It is shown that, at \(\eta _{\overline 1 } \)[φ(r)] > 0.7, the relationship between the quadratic nonlinear susceptibility of the investigated crystals and the degree of their central symmetry \(\eta _{\overline 1 } \)[φ(r)] is in qualitative agreement with the proposed model.     

Crystal structure of potassium titanyl phosphate doped with zirconium

This paper reports on the results of precision X-ray structural investigations of single crystals of the compounds KTi_0.96Zr_0.04OPO₄ (at 293 K) and KTi_0.97Zr_0.03OPO₄ (at 293 and 105 K). No significant splitting of the positions occupied by potassium atoms is revealed. This result is in agreement with a considerable decrease in the electrical conductivity of potassium titanyl phosphate KTiOPO₄ (KTP) crystals doped with zirconium (KTP: Zr) as compared to crystals of undoped potassium titanyl phosphate. It is established that the difference between the Ti-O bond lengths in chains formed by titanium octahedra is not a single structural parameter responsible for the nonlinear optical properties of crystals in this series.     

Synthesis,properties, and structure of potassium titanyl phosphate single crystals doped with hafnium

Single crystals of potassium titanyl phosphate doped with hafnium are grown by spontaneous flux crystallization. Their physical properties are studied, and the structure of three KTi_{1 − x} Hf _x OPO₄ crystals (x = 0.01, 0.03, and 0.12) is determined. In the crystals studied, hafnium mostly occupies the second titanium position. The doping of KTP crystals with hafnium results in an elongation of K-O bonds in the potassium polyhedra and, as a consequence, in a considerable (by approximately 180°C) decrease in the temperature of ferroelectric phase transition. The magnitude of anomalous permittivity substantially decreases. The electrical conduction in the specimens studied decreases by approximately half an order of magnitude in the low-temperature region but remains almost unchanged in the high-temperature region. Even at minor concentrations, the presence of a hafnium additive in the specimens considerably (by 35%) enhances the intensity of the second harmonic generation of laser radiation.     

Structural reasons for the nonlinear optical properties of KTi<Subscript>0.96</Subscript>Zr<Subscript>0.04</Subscript>OPO<Subscript>4</Subscript> single crystals

This paper reports on the results of the precision X-ray structural investigations of KTi_0.96Zr_0.04OPO₄ single crystals at room temperature. It is established that the incorporation of zirconium atoms into the structure of KTiOPO₄ (KTP) crystals does not lead to substantial changes in the framework structure and results only in an insignificant decrease in the scatter of the distances in the PO₄ tetrahedra and the formation of more symmetric (TiZr)O₆ octahedra as compared to the TiO₆ octahedra. However, the incorporation of zirconium atoms into the KTP structure is accompanied by the redistribution of the electron density in the crystal as a whole, so that the electron density increases in the region of the positions occupied by the potassium atoms. This changes the nonlinear optical properties of the given series of crystals, which are estimated from the intensity of the second harmonic generation signals.     

Incorporation of hafnium (IV) into KTP framework from phosphate‐fluoride fluxes

Solid solutions KTi_1‐XHf_XOPO₄ (х = 0.008 – 0.107) possessing the KTiOPO₄ structure, have been synthesized in molten system K₂O‐P₂O₅‐TiO₂‐HfF₄. The crystal growth experiment of Hf‐doped KTP crystal has been reported. The X‐ray powder diffraction data and chemical analysis are also presented. It has been shown that KTiOPO₄ crystal structure slightly changes when Hf incorporates into the framework. Transmission/absorption spectra of KTi_0.974Hf_0.026OPO₄ crystals have been recorded. The incorporation of Hf ions shifts the optical absorption edge in the UV‐visible spectrum towards the long‐wavelength region with absorption near 387 nm.     

Electrical and nonlinear optical properties of KTiOPO<Subscript>4</Subscript> single crystals doped with niobium,antimony, and tantalum

Single crystals of K_{1 ? x}Ti_{1 ? x}Nb_xOPO₄ (KTP: Nb), K_{1 ? x}Ti_{1 ? x}Sb_xOPO₄ (KTP: Sb), and K_{1 ? x}Ti_{1 ? x}Ta_xOPO₄ (KTP: Ta) solid solutions are grown and their dielectric, conducting, and nonlinear optical properties are investigated. The maximum contents x of niobium, antimony, and tantalum impurities in the crystals are equal to 0.11, 0.23, and 0.25, respectively. The doping of the KTiOPO₄ crystals with niobium, antimony, and tantalum brings about the formation of additional potassium vacancies and additional potassium positions and, as a consequence, an increase in the ionic conductivity σ₃₃. An increase in the doping level leads to a smearing of the ferroelectric phase transitions and a decrease in the phase transition temperatures. The permittivity of the doped crystals exhibits a broad relaxation peak in the temperature range 200–600°C.     

Crystal growth of zirconium‐doped KTiOPO4 crystals in the K2O‐P2O5‐TiO2‐ZrF4 system

Zirconium‐doped KTiOPO₄ (KTP) crystals were grown using a high temperature flux method in the K₂O‐P₂O₅‐TiO₂‐ZrF₄ system. The dopant content in the single crystals with general composition KTi_1‐xZr_xOPO₄ (where x = 0 – 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES‐ICP method and X‐ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO₄ containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF₄ precursor for zirconium injection into the flux allowed growing the zirconium‐doped KTP crystals at 930–750°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis,physical properties,and atomic structure of niobium-doped RbTiOPO<Subscript>4</Subscript> crystals

Single crystals of solid solutions Rb_1?xTi_1?xNb_xOPO₄(RTP: Nb) were grown and the temperature dependences of their dielectric and nonlinear optical properties and electric conductivity were studied. The maximum possible niobium content in these crystals is close to x = 0.1. The niobium impurities decelerate growth of {100} faces, and crystals take a plate-like habit. With increasing doping level, ferroelectric phase transitions diffuse and their temperature decreases. A specific feature of the dielectric properties of RTP: Nb crystals is the appearance of a broad relaxation maximum ε₃₃ in the temperature range 200–600°C caused by the formation of vacancies in the rubidium cation sublattice. The intensity of second-harmonic generation under laser irradiation decreases with increasing niobium content. The atomic structure of a crystal with x = 0.01 is studied and it is established that niobium substitutes for titanium only in Ti(1) positions.     

Synthesis and properties of zirconium-doped RbTiOPO<Subscript>4</Subscript> single crystals

Single crystals of the solid solutions RbTi_{1 ? x} Zr _x OPO₄ (0.015 < x < 0.034) were grown and their physical properties were studied. In the presence of zirconium in the crystals with the maximum content x = 0.034, the ferroelectric phase transition and the high-temperature transition from the orthorhombic to the cubic phase are shifted to lower temperatures by 100 and 50°C, respectively. In the temperature range from 700°C to room temperature, the conductivity of doped crystals decreases compared to that of the undoped crystals. It is of particular interest that the intensity of the second-harmonic generation of the doped crystals is substantially higher than that of RbTiOPO₄.     

Refinement of the K0.96Ti0.96Nb0.04OPO4 structure

The structure of a K_0.96Ti_0.96Nb_0.04OPO₄ single crystal was established by the methods of the X-ray diffraction analysis. Additional positions of K atoms were established. In the superionic state, these atoms provide ionic transport in the crystals.     

Atomic structure of Cd1 − x Zn x Te solid solution single crystals and structural prerequisites of their ferroelectricity

Precision X-ray structural investigation of Cd_{1 ? x} Zn _x Te single crystals (x = 0.04, 0.10, 0.21, 0.30, 0.40) is performed at temperatures below and above the ferroelectric phase transition. The regularities associated with the increase in the concentration of Zn atoms in solid solutions are revealed. It is established that the unit cell parameter of the crystals varies according to the Vegard law. The thermal parameters of Te and Zn atoms are strongly overestimated within the model of a sphalerite-type average structure. It is found that the positions of the Zn cations are split and the anion sublattice is disordered in such a way that the Te anions are predominantly displaced along the threefold axes. The Zn atoms can serve as off-center impurities. This phenomenon offers strong possibilities for manifesting the ferroelectric properties in the solid solutions under investigation.     

Crystal structure of α‴-(Zn1−x Cd x )3As2 (x = 0.26)

Single crystals of the α?-phase of (Zn_{1 ? x} Cd _x )₃As₂ solid solution (x = 0.26) have been prepared and investigated by X-ray diffraction analysis. The tetragonal unit-cell parameters are found to be a = b = 8.5377(2) Å, c = 24.0666(9) Å, sp. gr. I4₁/amd, Z = 16. Zn and Cd atoms in the crystal statistically occupy three symmetrically independent positions in the mirror planes and are tetrahedrally coordinated by arsenic atoms. (Zn,Cd) tetrahedra share edges to form a three-dimensional structure framework. The α?-phase is geometrically related to the fluorite structure. The character of arrangement of tetrahedral vacancies in fluorite-like unit cells is revealed. Chains of tetrahedral vacancies form microchannels oriented parallel the a and b axes, which pierce the three-dimensional structure framework at different levels along the c axis. The structure of α″-Cd₃As₂ crystals is found to be similar to that of α?-(Zn_0.74Cd_0.26)₃As₂.     

Electrical properties of PbxSn1‐xS thin films prepared by hot wall deposition method

The Pb_xSn_1‐xS (x = 0 – 0.25) thin films were prepared on glass substrates by hot wall vacuum deposition. The films were polycrystalline monophase in nature and had orthorhombic crystal structure. The thickness of the films was about 2‐3 μm. The temperature dependences of the conductivity were measured in the temperature range from 150 to 420 K. The films revealed p‐type of conductivity. The Seebeck coefficient and conductivity values of the films was in the range of α = 6 – 360 μV/K and σ = 4.8×10^‐5 – 1.5×10^‐2 Ω^‐1·cm^‐1, respectively, at room temperature depending on concentration of the lead in the films. The lead atoms created the substitution defects Pb_Sn in the crystal lattice of the Pb_xSn_1‐xS. These defects formed the donor energy levels in the band gap. The activation energy of the films increased in the range ΔE_a = 0.121 – 0.283 eV with increasing of the lead concentration. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and structure of photosensitive Pb1−x Mn x Te(Ga) epitaxial films

The growth and structure of (1-1.5)-μm-thick Pb_1?x Mn _x Te(Ga)(x = 0.06) films with 0.4?0.9 at % of gallium, grown on BaF₂(111) and Pb_1?x Sn _x Te (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc structure, and their growth planes are (111) and (100), according to the substrate orientation. The optimal conditions for obtaining high-resistivity photosensitive p-and n-type films with a perfect crystal structure (W _1/2 = 80″?100″) have been determined.     

Growth and characterization of Fe1 ? x M x VO4 single crystals (M = Al, Cr, Co, Ga)

Triclinic Fe_{1 ? x} M _x VO₄ single crystals (M = Al, Ga, Co, Cr) have been grown by the flux method from systems based on PbO-V₂O₅. Their crystallographic parameters are determined by powder X-ray diffraction. Fe_{1 ? x} Ga _x VO₄ single crystals (x = 0?C0.3) with a volume more than 1cm³ are grown using the seeding technique. The temperature and field dependences of magnetization and magnetic susceptibility of the grown Fe_{1 ? x} Ga _x VO₄ and Fe_{1 ? x} Al _x VO₄ single crystals (x = 0.3 in the solution-melt) are reported. It is shown that the magnetizations of these crystals exceed that of FeVO₄, and both of their antiferromagnetic phase transitions are shifted to lower temperatures.     

Spontaneous growth of single crystals of various shapes in tin-fullerite films

Changes in the structure and elemental and phase compositions of tin-fullerite films after their storage in air are investigated by X-ray diffraction, scanning electronic microscopy, atomic force microscopy, X-ray spectroscopic microanalysis, and Auger electron spectroscopy. Formation of the new phase Sn_xC₆₀, whisker tin and Sn_xC₆₀ crystals, and petal and flowerlike fullerite crystals under the action of internal stress is established.     

Crystal structure and resistivity characteristics of new tantalum bronze K6Ta6.5O15 + x F6 + y

The structure of K₆Ta_6.5O_{15 + x} F_{6 + y} (I) with partly reduced tantalum has been determined by the methods of X-ray diffraction analysis (SYNTEX P1 diffractometer, λMoK _α radiation, 808 independent reflections): sp. gr. P 6/m, a = 13.118(4), c = 3.862(1) Å, R _F = 0.0292. The resistivity of metal-like crystals I is almost independent of temperature in the temperature range T = 4–300 K. The physical properties studied allow one to relate the crystals to the group of tantalum bronzes. The structure of compound I is compared with that of the well-known crystals of the transparent dielectric K₆Ta_6.5O_14.5F_9.5 (Ia) containing only pentavalent tantalum not belonging to the group of bronzes. The I and Ia structures have the same basic frameworks but different distributions of additional Ta atoms located along the channel axes and different degrees of delocalization as well as the numbers and degrees of delocalization of the surrounding anions. The relation between these structural features and the resistivity characteristics of the two compounds is also discussed.     

Growth,structure, and some transport properties of topological insulators based on bismuth chalcogenide single crystals

Single crystals of topological insulators—bismuth chalcogenides Bi₂Te₃, Bi_{2 ? x} Sn _x Te₃, Bi₂Se₃, and Bi_{2 ? x} Cu _x Se₃ with different charge-carrier densities—are grown by the modified Bridgman method. Their composition and structure are investigated and temperature dependences of the electric resistance and magnetic field dependences of the Hall voltage are obtained.