铁电单晶Pb (Mg1/3Nb2/3)O3-PbTiO3的高场致应变及其在层叠式驱动器中的应用

通过研究(1_x)Pb(Mg_1/3Nb_2/3)O_{3_x}PbTiO3(PMNT)单晶在不同方向、不同组分下高场致应变的特性，确定了〈001〉取向 PMNT单晶（29％≤x≤31%）为制作层叠式驱动器的最佳组分范围，这组分的单晶具有高场致应变、低滞后而且性能较稳定的特点.研究结果表明，在保证应变曲线的线性和低滞后的前提下，将近-2kV/cm的负电场能够运用于〈001〉方向的PMNT晶体上. 40层（每片晶片尺寸为7mm×7mm×0.7mm）PM 关键词： PMNT单晶 场致应变 PMNT驱动器     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3(0.62PMN-0.38PT)单晶的折射率,给出了该温度下折射率色散的Sellmeier方程.研究了能带结构与折射率的关系,计算了样品的Sellmeier光学系数:对no,E0=5.50eV,λ0=0.226μm,S0=1.004×1014m-2,Ed=28.10eV;对ne,E0=5.57eV,λ0=0.223μm,S0=1.017×1014m-2,Ed=28.10eV.ABO3型钙钛矿材料中,BO6八面体基元决定了晶体的能带结构,对折射率产生重要影响.     

化学溶液法制备的Pb(Mg1/3 Nb2/3)O3-PbTiO3薄膜的光学性能

用化学溶液方法在宝石衬底及有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备了92%Pb(Mg1/3 Nb2/3)O3-8%PbTiO3(PMNT)薄膜,X射线衍射测试结果表明:在有LaNiO3缓冲层的Pt/TiO2/SiO2/Si衬底上制备的PMNT薄膜几乎是纯钙钛矿相,且薄膜呈现(110)择优取向.通过对Pt/TiO2/SiO2/Si衬底上的PMNT薄膜在2.5-12.6μm波长范围内的红外椭圆偏振光谱测试,并拟合得到了PMNT薄膜在2.5-12.6μm波长范围内的光学常数(n和k),通过对宝石衬底上的PMNT薄膜在200-1100nm波长范围内的可见-紫外透过率测试,并拟合得到了PMNT薄膜在200-1100nm波段的光学常数(n和k)和吸收系数α,进而推导出PMNT薄膜的禁带宽度为4.03eV.     

掺铑BaTiO3单晶场致应变特性的研究

系统地研究了掺铑的BaTiO₃单晶在老化后的场致应变性能.研究发现，晶体的场 致应变随老化时间的增加而增大，在老化27天后，在300V/mm的电场下，其双向场致应变可达1.11％；在较小的测试频率下（0.01Hz）也可得到0.95％的可逆的巨大的单向场致应变，在低频范围内，晶体的单向场致应变随测试频率增大而减小；研究晶体老化后的电滞回线，发现其 形状类似于蜂腰磁滞回线.实验结果表明，对BaTiO₃单晶掺杂铑元素可以大大改 善其电致伸缩性能，可能产生新的在超大应变及非线性驱动器中的应用. 关键词： 3单晶')" href="#">BaTiO₃单晶 掺铑 场致应变 老化     

掺铑BaTiO3单晶场致应变特性的研究

系统地研究了掺铑的BaTiO3单晶在老化后的场致应变性能.研究发现,晶体的场致应变随老化时间的增加而增大,在老化27天后,在300V/mm的电场下,其双向场致应变可达1.11%;在较小的测试频率下(0.01Hz)也可得到0.95%的可逆的巨大的单向场致应变,在低频范围内,晶体的单向场致应变随测试频率增大而减小;研究晶体老化后的电滞回线,发现其形状类似于蜂腰磁滞回线.实验结果表明,对BaTiO3单晶掺杂铑元素可以大大改善其电致伸缩性能,可能产生新的在超大应变及非线性驱动器中的应用.     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

0.7Pb(Mg1/3 Nb2/3)O3-0.3PbTiO3单晶/环氧树脂1-3型复合材料的压电性能研究

模拟了0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3(PMN-0.3PT)单晶1-3型压电复合材料的性能与单品体积分数的关系,得出性能最优时压电相的体积分数为64%,在这一体积分数下,采用切割-填充法,并使用了不同类型的环氧树脂填充制备复合材料.系统地研究了聚合物相对复合材料性能的影响,研究表明,减小聚合物相的刚度系数c和密度ρ有利于提高复合材料的性能,且聚合物相与压电相的结合强度对性能的影响非常明显,制备的PMN-0.3 PT单晶1-3型复合材料的厚度伸缩机电耦合系数k1高达90.1%,压电系数d33大于1000 pC/N,机械品质因数Qm为10.39,声阻抗Z也大大降低,性能明显优于传统的Pb(Zrx,Ti1-x)O3(PZT)陶瓷及其1-3复合材料,在压电换能器和传感器中显示出广阔的前景.     

Pb(Mg1/3Nb2/3)O3-PbTiO3/CoFe2O4复合薄膜 电学、磁学性能的研究

利用射频磁控溅射技术在LaNiO3/SiO2/Si基底上制备了Pb(Mg1/3Nb2/3)O3-PbTiO3/CoFe2O4和Pb(Mg1/3Nb2/3)O3-PbTiO3/CoFe2O4/Pb(Mg1/3Nb2/3)O3-PbTiO3两种复合薄膜.我们采取了三种退火条件对复合薄膜进行退火处理,研究两种复合薄膜的晶体结构、电学和磁学性能.通过对两种复合薄膜的结构的分析,发现两步法退火后得到复合薄膜同时存在纯钙钛矿相和尖晶石相两种结构.铁电性能测试表明:两种复合薄膜均具有较好的铁电性能,其中三层复合薄膜的剩余极化强度Pr最大可以达到14.9 μC/cm2,这要归因于多层复合薄膜内部的应力-应变效应和界面耦合效应.在电场强度为80kV/cm的漏电流密度数量级仅10-5A/cm2,其导电机制在高电场区满足Schottky机制.介频性能测试表明:复合薄膜的介频特性较差,双层复合薄膜的介电性能较好,其介电常数εr为1078,其介电损耗tgδ较大,约为0.43.此外,对复合薄膜的磁滞回线测试表明:两种复合薄膜中均存在磁学性能,且双层结构复合薄膜的铁磁性能较大,其饱和磁化强度Ms为119 emu/cm3,剩余磁化强度Mr达到31.6 emu/cm3,矫顽场Hc为1360 Oe. 以上测试结果表明,铁电有序和磁有序可以存在于钙钛矿-尖晶石结构当中,通过多层复合和合适退火方式可以增强其铁电和介电性能.     

弛豫铁电单晶0.93Pb(Zn1/3Nb2/3)O3-0.07PbTiO3的电光性能研究

以波长为632.8 nm的He-Ne激光作为光源,研究了三方相弛豫铁电单晶0.93Pb(Zn1/3Nb2/3)O3-0.07PbTiO3在室温下的折射率和线性电光性质.通过测量晶体的布儒斯特角,确定了单晶的两个主轴折射率:no=2.466,ne=2.488.利用改进的马赫-泽德尔干涉法测量了单晶的线性电光系数:r33=71 pm/V,r13=4 pm/V.计算得到有效电光系数rc=67 pm/V及半波电压Vπ=610 V.单晶优异的电光性能使其在激光调制与偏转领域有着巨大的应用潜力.     

弛豫型铁电单晶0.67Pb(Mg_(1/3)Nb_(2/3))O_3-0.33PbTiO_3的拉曼散射研究

本文采用拉曼散射技术在温度从374到-196℃的范围内,研究了弛豫型铁电单晶0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3(PMNT)。观察了在不同温度下拉曼光谱的变化,经分析这些变化反映了该晶体经历了两个相变:第一个相变温度发生在120℃,从顺电立方相到铁电四方相的相变,780 cm-1处模式在VH偏振下的改变标志了这一相变;第二个相变温度发生在34℃,是从铁电四方相到铁电三方相的相变,软模的出现代表了这一相变。     

High electric-field-induced strain of Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 crystals and their application in multilayer actuators

Electric-field-induced strain behavior of differently oriented and componential (1-x)Pb(Mg_1/3Nb_2/3)O₃xPbTiO₃ (PMNT) crystals was investigated. An optimum composition range (29%≤x≤31%) of 〈001〉-oriented PMNT crystals was ascertained for multilayer actuator applications, which exhibited high-strain and low-hysteresis behavior. The rhombohedral (monoclinic)–tetragonal phase-transition behavior in PMNT single crystals is dependent on their thermal and electric history, which markedly impacts on the strain performance of the crystals. In contrast to PZT-SF (doped PZT ceramics) multilayer actuators, the strain values for 20-layer PMNT actuators with individual element sizes of 6×6×0.3 mm³ are larger by more than five times at 20 kV/cm (0.373% compared to 0.072%), and 23-μm displacements can been achieved. Against 40-N load, the displacements are decreased to 20.2 μm. PACS 77.80.Bh; 77.80.-e; 77.65.Dq; 77.65.Ly; 77.22.-d     

High electric-field-induced strain of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals in multilayer actuators

An optimum composition range (29%≤x≤31%) of 〈001〉 oriented (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃(PMNT) crystals was ascertained for multilayer actuator applications, which exhibited high-strain and low-hysteresis behavior. A −1.5 kV/cm negative E-field can be applied to PMNT ferroelectric samples with low hysteresis. Forty layer actuators with individual element sizes of 7×7×0.7 mm³ were fabricated under identical processing conditions using two different materials: (1) single crystal PMNT and (2) commercial PZT-SF ceramics. Under free-load conditions, 48 μm displacements can been achieved in PMNT actuators at electric fields ranging from −1.5 to 10 kV/cm, which is more than twice the displacement of the PZT-SF actuators driven from −10 to 10 kV/cm. Under 4 kg loading, the displacements in PMNT stain actuators are decreased to 42.5 μm.     

Field-induced piezoelectric response in Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals

The electric field induced strain, piezoelectric and electromechanical response in relaxor based single crystal piezoelectrics (1−x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃(PMNT100x) were investigated as a function of dc bias and temperature along the crystallographic [001] orientation. With increasing temperature and dc bias, monoclinic and rhombohedral phases were found to coexist in the crystals, exhibiting large strain hysteresis, while above a threshold temperature and dc bias, the induced monoclinic and tetragonal phases were found to show very low strain hysteresis. The electric field level for the monoclinic to tetragonal phase transformation was found to exponentially decay with temperature. The mechanical quality factor Q for the tetragonal phase exhibits higher values when compared to rhombohedral and monoclinic phases, displaying improved domain stability. The domain stability of tetragonal crystals as a function of sample thickness was also studied, it was found that a higher dc bias was needed for thinner tetragonal crystals in order to stabilize the single domain configuration and reduce the strain hysteresis.     

Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3/CoFe_2O_4复合薄膜电学、磁学性能的研究

利用射频磁控溅射技术在LaNiO_3/SiO_2/Si基底上制备了Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3/CoFe_2O_4和Pb(Mg_(1/3)Nb_(2/3))O_3-Pb TiO_3/Co Fe_2O_4/Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3两种复合薄膜.我们采取了三种退火条件对复合薄膜进行退火处理,研究两种复合薄膜的晶体结构、电学和磁学性能.通过对两种复合薄膜的结构的分析,发现两步法退火后得到复合薄膜同时存在纯钙钛矿相和尖晶石相两种结构.铁电性能测试表明,两种复合薄膜均具有较好的铁电性能,其中三层复合薄膜的剩余极化强度Pr最大可以达到14.9μC/cm2,这要归因于多层复合薄膜内部的应力-应变效应和界面耦合效应.在电场强度为80 k V/cm的漏电流密度数量级仅10-5A/cm2,其导电机制在高电场区满足Schottky机制.介频性能测试表明:复合薄膜的介频特性较差,双层复合薄膜的介电性能较好,其介电常数εr为1078,其介电损耗tgδ较大,约为0.43.此外,对复合薄膜的磁滞回线测试表明:两种复合薄膜中均存在磁学性能,且双层结构复合薄膜的铁磁性能较大,其饱和磁化强度Ms为119 emu/cm3,剩余磁化强度Mr达到31.6 emu/cm3,矫顽场Hc为1360 Oe.以上测试结果表明,铁电有序和磁有序可以存在于钙钛矿-尖晶石结构当中,通过多层复合和合适退火方式可以增强其铁电和介电性能.     

Specific-heat anomaly caused by ferroelectric nanoregions in Pb(Mg(1/3)Nb(2/3))O3 and Pb(Mg(1/3)Ta(2/3))O3 relaxors

The specific heat of typical relaxors, Pb(Mg(1/3)Nb(2/3))O3 (PMN) and Pb(Mg(1/3)Ta(2/3))O3 (PMT), was measured by adiabatic and relaxation methods between 2 and 420 K. A broad anomaly was found in the specific heat curve over the wide temperature range between 150 and 500 K for PMN, and between 50 and 400 K for PMT, which provides evidence for the formation of ferroelectric nanoregions (FNR) in the paraelectric matrix. The entropy of the anomaly was estimated as 3.3 J K(-1) mol(-1) and 2.9 J K(-1) mol(-1) for PMN and PMT, respectively, which implies an order-disorder-type mechanism for the formation of FNR.     

Pb-driven anti-ferroelectric phase in Pb(Mg1/3Nb2/3)O3 : First-principle study

Density functional calculations are used to investigate the role of Pb displacement in the formation of anti-ferroelectric phase in Pb(Mg_1/3Nb_2/3)O₃. Order and disordered supercells, both are used. Through geometry optimization without symmetry imposed, the two supercells are found to be anti-ferroelectric. Displacement of cations are analyzed and it is shown that asymmetry of Pb’s next-nearest B-site shell is probably the reason for anti-parallel displacement of Pb. A–B-site, B-site–O bond distances and O₆ octahedral volumes are also calculated.