Analysis and optimization of a new photonic crystal filters in near ultraviolet band

Transmission characteristics of one-dimensional (1D) photonic crystals (PCs) heterostructures containing defective are studied using the transfer matrix method. The key is to search the best combination style for different 1D PCs to form heterostructures. It is shown that the non-transmission range over near ultraviolet and visible range can be substantially enlarged and the phenomenon of narrow band PC filter in near ultraviolet can be realized by adjusting the repeat cycle counts of various photonic crystals. The theoretical results on multiple heterostructures containing TiO₂/SiO₂ multilayer films are presented. With a perfect omni-directional and high peak transmission filters for TE modes, this structure opens a promising way to fabricate ultra-narrow band PC filters with wide non-transmission range in near ultraviolet and visible range.     

Controllable Photonic Band Gap and Defect Mode in a 1D CO2-Laser Optical Lattice

We propose a new method to form a novel controfiable photonic crystal with cold atoms and study the photonic band gap （PBG） of an infinite 1D CO2-laser optical lattice of SSRb atoms under the condition of quantum coherence. A significant gap generated near the resonant frequency of the atom is founded and its dependence on physical parameters is also discussed. Using the eigenquation of defect mode, we calculate the defect mode when a defect is introduced into such a lattice. Our study shows that the proposed new method can be used to optically probe optical lattice in situ and to design some novel and controllable photonic crystals.     

Influence of Different Substrates on Laser Induced Damage Thresholds at 1064nm of Ta2O5 Films

Ta2O5 films are prepared on Si, BK7, fused silica, antireflection （AR） and high reflector （HR） substrates by electron beam evaporation method, respectively. Both the optical property and laser induced damage thresholds （LIDTs） at 1064 nm of Ta2O5 films on different substrates are investigated before and after annealing at 673 K for 12 h. It is shown that annealing increases the refractive index and decreases the extinction index, and improves the O/Ta ratio of the Ta2O5 films from 2.42 to 2.50. Moreover, the results show that the LIDTs of the Ta2O5 films are mainly correlated with three parameters： substrate property, substoichiometry defect in the films and impurity defect at the interface between the substrate and the films. Details of the laser induced damage models in different cases are discussed.     

Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

A Theoretical Study of Super-Excited States of F2

In the framework of quantum defect theory, we study super-excited states of F2 molecules which can dissociate into F^＋ （^3P2,1,0） and F^-（^1 So） ion-pair. Based on our calculation, we present a vibrational resolved assignment of the high precision photofragment yield spectra for F^- from the F2 ion-pair production.     

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence （PL） from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films.     

Improvement in Dielectric Tunability of Ba0.6Sr0.4TiO4-Mg2TiO4 Composite Ceramics via Heterogeneous Nucleation Processing

Dielectric tunable composite ceramics Ba0.6Sr0.4 TiO4-Mg2 TiO4 （BST-MT） are prepared with a heterogeneous nucleation sol-gel approach. The Mg2 TiO4 powders are synthesized by the conventionM solid-state reaction method. The micro-sized MT powders with dispersant Ciba-4010 are introduced into Ba-Sr-Ti sol to obtain uniform and homogeneous mixture compounds with nano-sized BST particles synthesized via heterogeneous nucleation （HN） in the sol-gel process. Thus, the mierostructural and dielectric properties can be tailored. The dielectric constants of BST-MT composite ceramics can be adjusted in a larg＇e range from 294 to 1790, and the dielectric tunability can be adjusted from 29.4% to 37.0% with different MT contents from 60wt% to 20wt%. Compared to the samples prepared by the conventional solid-state （SS） process, the BST-MT composite ceramics by the heterogeneous nucleation sol-gel process exhibit a more uniform microstructure, and improve dielectric properties.     

The influence of Exciting Frequency on N2 and N2+ Vibrational Temperature of Nitrogen Capacitively Coupled Plasma

By using optical emission spectroscopy （OES）, N2 and N2^＋ vibrational temperatures in capacitively coupled plasma discharges with different exciting frequencies are investigated. The vibrational temperatures are acquired by comparing the measured and calculated spectra of selected transitions with a least-square procedure. It is found that N2 and N2^＋ vibrational temperatures almost increase linearly with increasing exciting frequency up to 23 MHz, then increase slowly or even decrease. The pressure corresponding to the maximum point of N2 vibrational temperature decreases with the increasing exciting frequency. These experimental phenomena are attributed to the increasing electron density, whereas the electron temperature decreases with exciting frequency rising.     

Antisite Defects of the L12 Structure Determined by the Phase Field Microelasticity Model

A phase field microelasticity simulation is performed to examine the antisite defect of L12-Ni3Al in Ni75Al5.3 V19.7 ternary alloy. Combinimg strain energy with the phase field model leads to an atom configuration change as time proceeds. For the Ni sublattice, the antisite defect AlNi, the equilibrium occupancy probability （OP） of which declines, precedes NiNi and VNi in reaching equilibrium; subsequently, NiNi and VNi present a phenomenon of symmetrical rise and decline individually. Similarly, for the Al sublattice, the antisite defect NiAl, the OP of which eventually rises, takes fewer time steps than AlAl and VAl to attain equilibrium. Thereafter, AlAl rises while VAl declines symmetrically at the axes of the NiAl curve. Furthermore, the OP for the Al sublattice is much more sensitive to strain energy than that for the Ni sublattice.     

Exchange coupling in multilayers with semiconductors

Intrinsic and heat-induced exchange coupling exists between ferromagnetic films separated by non-magnetic semiconducting spacer layers. Magnetic coupling across thin amorphous layers of Si, SiO, Ge and Ge/Si heterostructures is described. Antiferromagnetic coupling occurs in a limited thickness range for Si and Si/Ge heterostructures, and ferromagnetic coupling is found for SiO, Ge, and certain thicknesses of Si and Si/Ge heterostructures. The coupling strength is very weak, of the order of a few 10^–6 J/m². It exhibits a pronounced temperature dependence with a positive temperature coefficient for both ferro- and antiferromagnetic couplings. The observations indicate that resonant tunneling through defect states in the spacer material mediates the exchange coupling.     

Effects of Slight Plastic Deformation on Magnetic Properties and Giant Magnetoimpedance of FeCoCrSiB Amorphous Ribbons

Slight plastic deformation of 0 to 1% by cold rolling is proposed as a treatment which may modify the responses of magnetoimpedance （MI） sensor with an amorphous ribbon used as a sensitive element. The dependence of the magnetic properties of melt spun Fe3Co67Cr3Si15B12 amorphous ribbons and their MI responses in the initial state and after slight plastic deformation on the value of the deformation were comparatively analysed. The shape of the hysteresis loops shows a clear correlation with the value of the deformation. The variations of the total impedance, the real and the imaginary components, are measured for the current intensity of 1.S mA for the frequency of lO MHz. Slight plastic deformation affects both real and imaginary components and allows a control of the shape of the MI curves in a small field in a range usually used in biomedical applications. The proposed deformation treatments can be useful for the construction of the MI sensitive elements with a new type of the responses.     

Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold （LIDT） is measured by a Nd：YAG laser at 355 nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd：YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.     

Bulk Modulus and Electronic Band Structure of ZnGa2X4(X=S,Se): a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa₂X₄ (X=S,Se). We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa₂X₄ by fitting the Birch-Murnaghan's equation of state. The extended Cohen's empirical formula agrees well with our ab initio results.     

Sixth Harmonic of A Nd：YVO4 Laser Generation In KBBF for ARPES

We report that a deep ultraviolet （DUV） laser from the sixth harmonic of a 1064nm laser has been firstly used as light source in an ultrahigh energy-resolution angle-resolved photoemission spectroscopy （ARPES）. The wavelength is 177.3nm obtained by using the second harmonic KBe2BO3F2 crystal with a frequency tripled 1064nm Nd：YVO4 laser. The large flux （10^14 - 10^15 photons/s） and narrow line width （0.26 meV） are suitable for the ultrahigh-energy resolution ARPES. The laser-ARPES can be a powerful tool to study the electronic structure at and near the Fermi level of the superconductor and correlated materials. The laser-ARPES has worked more than 500 h already.     

Effects of Interfacial Polarization on Voltage Tunability of Pb(Fe1/2Nb1/2)1-xTixO3 Single Crystals

The voltage tunability of Pb(Fe_1/2Nb_1/2)_1-xTi_xO₃ single crystals is investigated at a low electric field (<130 V/cm) in a low frequency range (<1 MHz). The results show that the capacitance is strongly suppressed by the applied dc biases for both the rhombohedral sample and the tetragonal sample. A negative voltage tunability is only detected in the tetragonal sample. The origin of the giant tunability and the negative tunability is discussed based on the multipolarization-mechanism model and the equivalent circuit model, respectively. It is ascribed to the interfacial polarization at the interface of electrode/sample.     

Ultrashort-laser-pulse damage threshold of transparent materials and the role of incubation

We present investigations of the surface damage threshold for transparent materials, e.g. a-SiO₂, CaF₂ and LiF, after single- and multiple-laser-pulse irradiation at 800 nm in the picosecond and sub-picosecond duration range. Our study shows clearly that the surface damage threshold drops dramatically during multiple-laser-shot irradiation, due to material-dependent incubation effects. This has important consequences for applications such as laser machining and for the lifetime of optical components. Different processes that can reduce the surface damage threshold with increasing laser shots are evaluated, such as sub-surface damage and defect formation. The mechanism of laser-induced defect formation, e.g. color centers, is believed to be mainly responsible for the observed reduction in the threshold for surface damage with increasing laser-shot numbers.     

Microwave Magnetic Permeability of Fe3O4 Nanoparticles

Well-dispersed Fe3O4 nanoparticles are synthesized via an oxidization method with NANO2 as oxidant. The microwave magnetic properties of the composites are studied with different volume fractions of fe3O4 nanoparticles. It is found that a lower volume fraction corresponds to a higher magnetic resonance frequency. This could be ascribed to the enhancement of exchange interaction with a weakened dipolar interaction when the volume fraction decreases.     

Structural and Thermodynamic Properties of M3W3N （M=Fe,Co, Ni）

Ternary transition metal nitrides, Fe3 W3N, Coa W3N, and Nia WaN~ are studied by the use of interatomic potentials acquired from lattice inversion. The study indicates that Fe3 WaN would be more stable than the other compounds in the family of intermetallic tungsten nitrides. The investigation of phonon density of states indi- cates that the lower frequency modes are mostly excited by the metal atoms, and the higher frequency modes are mostly excited by the nitrogen atoms. A qualitative analysis is carried out with the relevant potentials for the phase stability and vibrational modes.     

Bianisotropy Picture of Higher Permeability at Higher Frequencies

With an effective bianisotropy picture, high-frequency behaviours of different magnetic materials can be reconciled, and the higher permeability and higher resonance frequencies are achieved even in the GHz range. The validity of the bianisotropy picture is quantitatively verified by the in-plane anisotropic Fe₃₄Co₅₅Zr₁₁ thin films. A prolate elliptical precession of the magnetization about its equilibrium direction is the key point, which can be induced by an artificial or an intrinsic bianisotropy system.     

Polarized Micro-Raman Study of the Temperature-Induced Phase Transition In 0.67 Pb（Mg1/3Nb2/3）O3-0.33PbTiO3

Polarized Raman spectra of ferroelectric relaxor 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （0.67PMN-0.33PT） single crystal are systematically investigated in a wide temperature range from -196 to 600℃ by micro-Raman scattering technique. The results clearly reveal that there are two structural phase transitions in such composite ferroelectric relaxor： the rhombohedral-tetragonal （R- T） phase transition and the tetragonal-cubic （T- C） phase transition. The former occurs at about TR-T =34℃, corresponding to the vanishing of the soft A1 mode at 106cm^-1 recorded in the parallel polarization. The latter appears at about TT-C = 144℃, which can be verified with the vanishing of mode at 780cm^-1 measured in the crossed polarization.