首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 296 毫秒
1.
Nanoscale effects in focused ion beam processing   总被引:3,自引:0,他引:3  
Focused ion beams with diameters of 8 to 50 nm are used for material processing in the nanoscale regime. In this paper, effects of the ion beam–solid interaction determining the formation of small structures by ion-beam sputtering and chemically assisted material deposition and etching are investigated. In the case of decreasing feature size, angle-dependent sputtering, a non-constant sputter rate, and scattered ions play an important role. The impact on side-wall angle, aspect ratio, and shape of the bottom of the etched structures is discussed. In beam tail regions, these effects will be especially pronounced, leading to material swelling instead of material removal. Ion beam assisted etching and deposition will face additional effects. For small structures, gas depletion becomes a significant drawback. The impact on gas depletion and the competition with sputtering are discussed. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-9131/761360, E-mail: frey@iis-b.fhg.de  相似文献   

2.
Transient effects on diffusion and activation during post-implantation anneals are a major obstacle for the further miniaturization of ultra-large-scale integrated semiconductor devices. The article reviews recent developments in the simulation of such phenomena with particular emphasis on models for the kinetics of self-interstitial agglomerates and boron–interstitial clusters. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-9131/761-212, E-mail: pichler@iis-bfhg.de  相似文献   

3.
The characterizations of a so-called ‘mild’ PbTe layer thermal-evaporated from an excess of Te (<1 mol.%) evaporable materials are reported. The results reveal that the film obtained is polycrystalline and has a single-phase NaCl-type PbTe crystal structure. It is also demonstrated that the film has a homogeneous surface morphology and a high degree of homogeneous distribution of Te-rich components along the layer. The study of mid-infrared optical constants of a surface-polished film indicates that the influence of surface scattering on optical properties is very small. Received: 3 July 2002 / Accepted: 7 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/6516-9946, E-mail: lbincome@yahoo.com  相似文献   

4.
We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 μm and subsequent selective wet chemical etching of the damaged regions by hot H3PO4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×1016 to 5×1017 He+/cm2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax +41-21/693-3701, E-mail: aurelian.crunteanustanescu@epfl.ch  相似文献   

5.
We report the spectroscopic detection of formaldehyde in ambient air using cavity leak-out spectroscopy, a cw variant of cavity ring-down spectroscopy. This technique proved to be suitable for a real-time quantitative analysis of polluted air without any preprocessing of the air sample. Using a tunable CO-overtone sideband laser for the λ=3 μm spectral region and a ring-down cell with R=99.95% mirrors, we achieved a detection limit of 2 parts per billion formaldehyde in ambient air, corresponding to a minimum detectable absorption coefficient of 7×10-9/cm (sampling time: 2 s). Calibration problems arising from the polarity of the molecule and due to HITRAN database uncertainties are discussed. Received: 28 March 2002 / Revised version: 7 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +49-211/811-3121, E-mail: muertz@uni-duesseldorf.de  相似文献   

6.
It is shown theoretically that electromagnetically induced transparency (EIT) due to strong exciton–phonon coupling can occur in strongly coupled exciton–phonon systems such as polymers and organic semiconductors and lead to ultra-slow light effects. The results indicate that the strong coupling of excitons and phonons is important, but the exciton– exciton interaction plays a small role in the generation of the EIT. Numerical results for polydiacetylene–toluene sulfonate are also presented. This EIT in a solid-state medium might be utilized for efficient multiwave mixing and quantum nondemolition measurements, as well as for novel acousto-optical devices. Received: 21 August 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. E-mail: zhukadi@yahoo.com  相似文献   

7.
Silver, copper, and boron (from a boron nitride target) were sputtered with xenon ions. The isotopic composition of secondary ions of silver was measured at ion energies ranging from 300 eV to 3 keV and, for copper and boron, at 2.0, 2.5, and 3.0 keV. An ion gun was used to generate the ion beam. The secondary ions were detected at a small emission angle by a quadrupole mass spectrometer. The secondary-ion flux of silver was found to be enriched in heavy isotopes at lower incident-ion energies. The heavy-isotope enrichment was observed to decrease with increasing primary-ion energy. Beyond 500 eV, light isotopes of silver were sputtered preferentially with the enrichment increasing to a constant value of 1.018. The sputtered flux of copper and boron also indicated constant enrichments (1.008 and 1.281 for copper and boron respectively) in light isotopes at high ion energies. Received: 2 August 2002 / Accepted 9 August 2002: / Published online: 4 December 2002 RID="*" ID="*"Present address: Pacific Northwest National Laboratory, Richland, WA 99 352, USA RID="**" ID="**"Present address: Philips Display Components Company, Ottawa, OH 45 875 USA RID="***" ID="***"Corresponding author. Fax: +1-334/727-8090, E-mail: pkray@tusk.edu  相似文献   

8.
Sub-ps laser microstructuring of soft X-ray Mo/Si multilayer gratings   总被引:1,自引:0,他引:1  
The sub-picosecond laser microstructuring of multilayer gratings is presented in this paper. A micromachining system operating with a 0.5 ps KrF laser at 248 nm was used to etch grating structures with a groove width of 1–2 μm in Mo/Si and Si/Mo multilayers. Atomic force microscopy, scanning electron microscopy and X-ray reflectivity were used to characterize the microetched patterns. The ω-scans around the 1st Bragg maximum show symmetric satellites up to 3rd order, with positions corresponding to the grating period. The use of sub-picosecond laser pulses minimizes the thermally affected zone and enhances the quality of the etched features. Short pulse laser processing is advantageous for the fabrication of high spatial resolution microstructures required in X-ray optics. Received: 21 May 2002 / Accepted: 19 August 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Email: dpapa@iesl.forth.gr  相似文献   

9.
Localized physical and chemical reactions induced by focused ion and electron beams, i.e. dual beams, have been used to fabricate field emitters (FEs) and their arrays, field-emitter arrays (FEAs), without masking and annealing processes. Issues arising from beam processing such as beam-induced damage and contamination were eliminated to provide FEAs with low leakage current. Quick prototyping and repairing processes of FEs and FEAs using dual-beam processing have been demonstrated. Nb- or Au-gated Pt FEAs have been fabricated using dual beams. The fabricated FEAs showed a turn-on voltage of 40 V for field emission with a typical emission current of about 1 μA/tip. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +81-6/6850-6662, E-mail: takai@rcem.osaka-u.ac.jp  相似文献   

10.
We describe a near-infrared in situ tunable diode laser spectrometer developed for atmospheric measurements of CH4 in the upper troposphere and lower stratosphere (UT/LS). The instrument is designed to provide fast-response (0.5–1 Hz) measurements and operate autonomously on the NASA WB-57F high-altitude aircraft. A single-mode InGaAsP distributed feedback laser diode operating at 1.6537 μm scans continuously over the R(3) rotation–vibration transition in the 2ν3 band. We use a direct absorption technique incorporating a custom-designed long path length (252 m) low-volume (3.6 L) astigmatic Herriott cell. The present detection sensitivity is 5×1010 molecules cm-3, corresponding to ∼20 ppbv in the UT/LS, with the main limit to instrument precision being background optical interference fringes. In-flight performance is demonstrated by presentation of recent data. Received: 25 January 2002 / Revised version: 5 April 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-303/497-5373, E-mail: richard@al.noaa.gov  相似文献   

11.
In this article, we describe an experimental system for generating Bose–Einstein condensates and controlling the shape and motion of a condensate by using miniaturised magnetic potentials. In particular, we describe the magnetic trap setup, the vacuum system, the use of dispenser sources for loading a high number of atoms into the magneto-optical trap, the magnetic transfer of atoms into the microtrap, and the experimental cycle for generating Bose–Einstein condensates. We present first results on outcoupling of condensates into a magnetic waveguide and discuss influences of the trap surface on the ultra-cold ensembles. Received: 21 August 2002 / Revised version: 10 December 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-7071/295-829, E-mail: fortagh@pit.uni-tuebingen.de  相似文献   

12.
Large quantities of high-purity crystalline β-SiC nanowires have been synthesized at relatively low temperature via a new simple method, the chemical-vapor-reaction approach, in a home-made graphite reaction cell. A mixture of milled Si and SiC powders and C3H6 were employed as the starting materials. The results show that the nanowires with diameters of about 10–35 nm are single crystalline β-SiCwithout any wrapping of amorphous material, and the nanowire axes lie along the 〈111〉 direction. Some unique properties are found in the Raman scattering from the β-SiC nanowires, which are different from previous observations of β-SiC materials. A possible growth mechanism for the β-SiC nanowires is proposed. Received: 27 August 2002 / Accepted: 28 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-29/8491-000, E-mail: zjli-sohu@sohu.com  相似文献   

13.
The progress in the development of a sensor for the detection of trace air constituents to monitor spacecraft air quality is reported. A continuous-wave (cw), external-cavity tunable diode laser centered at 1.55 μm is used to pump an optical cavity absorption cell in cw-cavity ringdown spectroscopy (cw-CRDS). Preliminary results are presented that demonstrate the sensitivity, selectivity and reproducibility of this method. Detection limits of 2.0 ppm for CO, 2.5 ppm for CO2, 1.8 ppm for H2O, 19.4 ppb for NH3, 7.9 ppb for HCN and 4.0 ppb for C2H2 are calculated. Received: 3 April 2002 / Revised version: 3 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-202/994-5873, E-mail: Houston@gwu.edu  相似文献   

14.
A portable modular gas sensor for measuring the 13C/12C isotopic ratio in CO2 with a precision of 0.8‰(±1σ) was developed for volcanic gas emission studies. This sensor employed a difference frequency generation (DFG)-based spectroscopic source operating at 4.35 μm (∼2300 cm-1) in combination with a dual-chamber gas absorption cell. Direct absorption spectroscopy using this specially designed cell permitted rapid comparisons of isotopic ratios of a gas sample and a reference standard for appropriately selected CO2 absorption lines. Special attention was given to minimizing undesirable precision degrading effects, in particular temperature and pressure fluctuations. Received: 16 April 2002 / Revised version: 28 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-713/5245237, E-mail: fkt@rice.edu  相似文献   

15.
An industrial trace-ammonia sensor based on photoacoustic spectroscopy and CO2 lasers has been developed for measuring ammonia with a 1σ detection limit of 220 parts-per-trillion (ppt) in an integration time of 30 s. The instrument response time for measuring ammonia was 200 s, limited by adsorption effects due to the polar nature of ammonia. The minimum detectable fractional absorbance was 2.0×10-7, and the minimum normalized detectable absorption coefficient for this system was 2.4×10-7 W cm-1/z. The 9R(30) transition of the CO2 laser at 9.22 μm with 2 W of output power was used to probe the strong sR(5,K) multiplet of ammonia at the same wavelength. This sensor was demonstrated with an optically multiplexed configuration for simultaneous measurement in four cells. Received: 3 April 2002 / Revised version: 31 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-310/458-0171, E-mail: webber@pranalytica.com  相似文献   

16.
We express the commutation relation between the operators of the momentum and the radial unit vectors in D dimensions in differential and integral form. We connect this commutator with the quantum fictitious potential emerging in the radial Schr?dinger equation of an s-wave. Received: 6 August 2002 / Revised version: 30 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-731/502-3086, E-mail: markus.cirone@physik.uni-ulm.de  相似文献   

17.
Group-IV nanocluster formation by ion-beam synthesis   总被引:1,自引:0,他引:1  
A short review of our investigations devoted to the use of ion-beam-synthesized nanoclusters for silicon-based light emission and nonvolatile memory effects is presented. Blue-violet light emission is demonstrated based on Ge-implanted silicon dioxide layers thermally grown on silicon substrates. This version of silicon-based light emission relies on Ge-related defects in the amorphous ≡Si–O–Si≡ network. The photoluminescence and electroluminescence are excited by a singlet S0–S1 transition of a neutral oxygen vacancy and by electron injection from the silicon substrate into the silicon dioxide layer, respectively. Whereas the photoluminescence excitation is a well-known mechanism, for the case of electroluminescence an interpretation was performed for the first time in the course of our studies. It was found that the most probable way to excite luminescence centers is the impact excitation by hot electrons. Whereas the injection is explained by trap-assisted tunneling of electrons from the substrate into the oxide, the electrons will be transported via traps or in the SiO2 conduction band. The application of the silicon-based light-emitting devices for an integrated optocoupler arrangement is described. Another application of nanoclusters is based on the investigation of thin Si-implanted silicon dioxide layers for nonvolatile memory devices. First promising results demonstrate that the observed programming window can reach several volts and the devices exhibit excellent retention behavior. A 256 K-nv-SRAM is demonstrated showing a programming window of >1 V for write pulses of 12 V/8 ms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: w.skorupa@fz-rossendorf.de  相似文献   

18.
Pulsed thermoelectrically cooled QC-DFB lasers operating at 15.6 μm were characterized for spectroscopic gas sensing applications. A new method for wavelength scanning based on repetition rate modulation was developed. A non-wavelength-selective pyroelectric detector was incorporated in the sensor configuration giving the advantage of room-temperature operation and low cost. Absorption lines of CO2 and H2O were observed in ambient air, providing information about the concentration of these species. Received: 29 April 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-713/348-5686, E-mail: akoster@rice.edu  相似文献   

19.
Spectroscopic sensing of gases can be performed with high sensitivity and photometric precision by cavity ringdown (CRD) absorption spectroscopy. Our cavity ringdown spectrometer incorporates continuous-wave (cw) tunable diode lasers, fibre-optic coupling and standard photonics and optical telecommunications components. It comprises a rapidly swept optical cavity in a single-ended optical heterodyne transmitter–receiver configuration, enabling optical absorption of gases to be recorded either as single-frequency scanned spectra or as simultaneous, multi-wavelength tailored spectra. By measuring weak near-infrared rovibrational spectra of carbon dioxide gas (CO2), with high resolution in the vicinity of 1.53 μm, we have realised a noise-limited absorption sensitivity of 2.5×10-9 cm-1 Hz-1/2. Analytical sensitivity limits (both actual and projected) and prospective gas-diagnostic applications are discussed. Our approach to cw-CRD spectroscopy offers high performance in a relatively simple, low-cost, compact instrument that is amenable to chemical analysis of trace gases in medical, agricultural, industrial and environmental situations. Received: 16 May 2002 / Revised version: 3 June 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/9850-8313, E-mail: brian.orr@mq.edu.au  相似文献   

20.
Pb(Zr,Ti)O3 (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films. Received: 6 August 2002 / Accepted: 9 August 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/5241-3122, E-mail: huarongzeng@163.net  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号