Narrow bandgap semiconducting polymers for solar cells with near-infrared photo response and low energy loss

The alternating diketopyrrolopyrrole (DPP)-Quinoxaline (Qx) based conjugated polymers are synthesized and investigated as electron donors for polymer solar cells (PSCs). Through the substitution of phenyl in Qx unit at para (p) and meta (m) positions with methoxy group, the resultant DPP-pMQx and DPP-mMQx polymers possess narrow optical band gap (1.32 and 1.26 eV) with relatively low-lying highest occupied molecular orbitals. The obtained photovoltaic devices indicate that the combination of DPP with weak acceptor Qx is helpful to develop narrow bandgap polymers with near-infrared photo response and low energy loss (0.58 eV for DPP-mMQx) in PSC devices.     

Synthesis of new donor-acceptor polymers containing thiadiazoloquinoxaline and pyrazinoquinoxaline moieties: low-band gap, high optical contrast, and almost black colored materials

Two low band gap conjugated polymers, poly[4,9-bis(4-hexylthien-2-yl)-6,7-di(thien-2-yl)-[1,2,5]thiadiazolo[3,4-g]quinoxaline] (PHTTQ) and poly[5,10-bis(4-hexylthien-2-yl)-2,3,7,8-tetra(thien-2-yl)pyrazino[2,3-g]quinoxaline] (PHTPQ), consisting of alternating electron-rich 3-hexylthiophene and electron-deficient 6,7-di(thien-2-yl)-[1,2,5]thiadiazolo[3,4-g]quinoxaline (TTQ) and 2,3,7,8-tetra(thien-2-yl)-2,3-dihydropyrazino[2,3-g]quinoxaline (TPQ) units were synthesized electrochemically. The structures of the π-conjugated monomers were tailored using thiophene as the pendant group on the acceptor units (TTQ and TPQ). The electrochemical and optical properties of the polymers were investigated by cyclic voltammetry and UV-vis-NIR spectroscopy. The absorption spectra of PHTPQ, revealing a 1.0 eV band gap, exhibited three maxima at 352 nm, 535 nm, and 750 nm. Consequently, its absorption spectra cover the region between 400 and 800 nm, which make the polymer almost black in appearance. PHTTQ shows a λ_max value of 820 nm and a band gap of 0.8 eV which is very low among other [1,2,5]thiadiazolo[3,4-g]quinoxaline-containing donor-acceptor type polymers.     

Synthesis and photovoltaic properties of fluorene-based copolymers with narrow band-gap units on the side chain

A series of novel polyfluorene copolymers are developed by covalently attaching narrow band gap aryl-heterocycle units of Th-BT-TPA to the side chain of polyfluorene with an alkyl phenyl spacer through Pd-catalyzed Suzuki coupling reactions. The resulting copolymers are soluble in common organic solvents. The electrochemical, optical, and photovoltaic properties of the copolymers are studied. Electrochemical and optical analysis reveal that these polymers exhibit relatively low band gaps from 1.95 to 2.00 eV and exhibit strong absorption in the 300-620 nm region. BHJ solar cells blending copolymers PF-MR15-DBT35 with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) (1:1 weight ratio) as the active layer present a high open-circuit voltage (V_oc∼1.0 V) and a power conversion efficiency of 0.7% under simulated solar light AM1.5G (80 mW/cm²). Further investigations of other polyfluorene copolymers with narrow band gap aryl-heterocycle units on the side chain are in progress.     

Synthesis and characterization of dithienobenzothiadiazole-based donor–acceptor conjugated polymers for organic solar cell applications

New donor–acceptor conjugated polymers (P1 and P2) containing a fused-ring dithienobenzothiadiazole (DT-BTD building block) were synthesized by using the Stille copolymerization method. The synthesized polymers were characterized by ¹H NMR, GPC, and elemental analysis. The optical band gaps of the polymers were found to be 1.86 and 1.9 eV, respectively, as calculated from their film onset absorption edge. Upon annealing both produced a distinct shoulder peak in their film absorption spectra. The electrochemical studies of P1 and P2 revealed that the HOMO and LUMO energy levels of the polymer were −5.3, −5.1 eV, and −3.4, −3.2 eV, respectively. The polymers are thermally stable up to 250–350 °C.     

Copolymers Containing 1-Methyl-2-phenyl-imidazole Moieties as Permanent Dipole Generating Units: Synthesis,Spectroscopic, Electrochemical,and Photovoltaic Properties

New donor–acceptor conjugated alternating or random copolymers containing 1-methyl-2-phenylbenzimidazole and benzothiadiazole (P1), diketopyrrolopyrrole (P4), or both acceptors (P2) are reported. The specific feature of these copolymers is the presence of a permanent dipole-bearing moiety (1-methyl-2-phenyl imidazole (MPI)) fused with the 1,4-phenylene ring of the polymer main chain. For comparative reasons, polymers of the same main chain but deprived of the MPI group were prepared, namely, P5 with diketopyrrolopyrrole and P3 with both acceptors. The presence of the permanent dipole results in an increase of the optical band gap from 1.51 eV in P3 to 1.57 eV in P2 and from 1.49 eV in P5 to 1.55 eV in P4. It also has a measurable effect on the ionization potential (IP) and electrochemical band gap (E_g^CV), leading to their decrease from 5.00 and 1.83 eV in P3 to 4.92 and 1.79 eV in P2 as well as from 5.09 and 1.87 eV in P5 to 4.94 and 1.81 eV in P4. Moreover, the presence of permanent dipole lowers the exciton binding energy (E_b) from 0.32 eV in P3 to 0.22 eV in P2 and from 0.38 eV in P5 to 0.26 eV in P4. These dipole-induced changes in the polymer properties should be beneficial for photovoltaic applications. Bulk heterojunction solar cells fabricated from these polymers (with PC₇₁BM acceptor) show low series resistance (r_s), indicating good electrical transport properties. The measured power conversion efficiency (PCE) of 0.54% is limited by the unfavorable morphology of the active layer.     

Narrow band gap D–A copolymer of indacenodithiophene and diketopyrrolopyrrole with deep HOMO level: Synthesis and application in field‐effect transistors and polymer solar cells

A novel fused ladder alternating D–A copolymer, PIDT–DPP, with alkyl substituted indacenodithiophene (IDT) as donor unit and diketopyrrolopyrrole (DPP) as acceptor unit, was designed and synthesized by Pd‐catalyzed Stille‐coupling method. The copolymer showed good solubility and film‐forming ability combining with good thermal stability. PIDT–DPP exhibited a broad absorption band from 350 to 900 nm with an absorption peak centered at 735 nm. The optical band gap determined from the onset of absorption of the polymer film was 1.37 eV. The highest occupied molecular orbital level of the polymer is as deep as ?5.32 eV. The solution‐processed organic field‐effect transistor (OFETs) was fabricated with bottom gate/top contact geometry. The highest FET hole mobility of PIDT–DPP reached 0.065 cm² V^?1 s^?1 with an on/off ratio of 4.6 × 10⁵. This mobility is one of the highest values for narrow band gap conjugated polymers. The power conversion efficiency of the polymer solar cell based on the polymer as donor was 1.76% with a high open circuit voltage of 0.88 V. To the best of our knowledge, this is the first report on the photovoltaic properties of alkyl substituted IDT‐based polymers. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Wide bandgap OPV polymers based on pyridinonedithiophene unit with efficiency >5%

We report the properties of a new series of wide band gap photovoltaic polymers based on the N-alkyl 2-pyridone dithiophene (PDT) unit. These polymers are effective bulk heterojunction solar cell materials when blended with phenyl-C₇₁-butyric acid methyl ester (PC₇₁BM). They achieve power conversion efficiencies (up to 5.33%) high for polymers having such large bandgaps, ca. 2.0 eV (optical) and 2.5 eV (electrochemical). Grazing incidence wide-angle X-ray scattering (GIWAXS) reveals strong correlations between π–π stacking distance and regularity, polymer backbone planarity, optical absorption maximum energy, and photovoltaic efficiency.     

Modulation of electronic properties of π‐conjugated copolymers derived from naphtho[1,2‐b:5,6‐b′]dithiophene donor unit: A structure‐property relationship study

A set of three donor‐acceptor conjugated (D‐A) copolymers were designed and synthesized via Stille cross‐coupling reactions with the aim of modulating the optical and electronic properties of a newly emerged naphtho[1,2‐b:5,6‐b′]dithiophene donor unit for polymer solar cell (PSCs) applications. The PTNDTT‐BT , PTNDTT‐BTz , and PTNDTT‐DPP polymers incorporated naphtho[1,2‐b:5,6‐b′]dithiophene ( NDT ) as the donor and 2,2′‐bithiazole ( BTz ), benzo[1,2,5]thiadiazole ( BT ), and pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione ( DPP ), as the acceptor units. A number of experimental techniques such as differential scanning calorimetry, thermogravimetry, UV–vis absorption spectroscopy, cyclic voltammetry, X‐ray diffraction, and atomic force microscopy were used to determine the thermal, optical, electrochemical, and morphological properties of the copolymers. By introducing acceptors of varying electron withdrawing strengths, the optical band gaps of these copolymers were effectively tuned between 1.58 and 1.9 eV and their HOMO and LUMO energy levels were varied between ?5.14 to ?5.26 eV and ?3.13 to ?3.5 eV, respectively. The spin‐coated polymer thin film exhibited p‐channel field‐effect transistor properties with hole mobilities of 2.73 × 10^?3 to 7.9 × 10^?5 cm² V^?1 s^?1. Initial bulk‐heterojunction PSCs fabricated using the copolymers as electron donor materials and [6,6]‐phenyl C71 butyric acid methyl ester (PC₇₁BM) as the acceptor resulted in power conversion efficiencies in the range of 0.67–1.67%. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 2948–2958     

An effect of N ion bombardment on the properties of CdTe thin films

E-beam evaporated CdTe thin films were processed with N⁺ ion bombardment as in situ process. The N⁺ ion glow was generated using simple Multipurpose Al probe instead of conventional plasma sources. The prepared films were identified as nano crystalline using XRD analysis. High N⁺ ion fluence helped to grow (3 1 1) oriented CdTe thin films instead of (2 2 0) and (1 1 1). The observed results revealed the effect of N⁺ ion fluence on the structural parameters like lattice parameter, d space value, crystalline size, dislocation density, micro strain etc. The observed optical band gap values lie in between 1.47 and 1.77 eV. The effect of N⁺ ion bombardment on optical properties was also reported. Noticeable change in electrical and surface properties was also observed. The observed value shows the reproducibility as <1% and it is suggested that the N⁺ ion plasma was effectively utilized to modify the structural, optical and surface properties as in situ.     

First-principle studies of Ca-X (X=Si,Ge,Sn,Pb) intermetallic compounds

The structural properties, elastic properties, heats of formation, electronic structures, and densities of states of 20 intermetallic compounds in the Ca-X (X=Si, Ge, Sn, Pb) systems have been systematically investigated by using first-principle calculations. Our computational results indicated that with increasing atomic weight of X, the bulk modulus of Ca-X intermetallic compounds decreases gradually. It was also found that Ca₃₆Sn₂₃ and CaPb are mechanically unstable phases. Results on the electronic energy band and densities of states also indicated that Ca₃Si₄ is an indirect band gap semiconductor with a band gap of 0.598 eV, and Ca₂Si, Ca₂Ge, Ca₂Sn, and Ca₂Pb are direct band gap semiconductors with band gaps of 0.324, 0.265, 0.06, and 0.07 eV, respectively. In addition, it is found that the absolute values of heats of formation for all Ca-X intermetallics are larger than 30 kJ/mol atom.     

Chemical deposition of semiconducting cadmium selenide quantum dots in thin film form and investigation of their optical and electrical properties

Cadmium selenide quantum dots with cubic crystal structure are chemically deposited in thin film form using selenosulfate as a precursor for selenide ions and ammonia buffer with double role: as a ligand and as a pH value controller. The optical band gap energies of as-deposited and thermally treated cadmium selenide thin films, calculated within the framework of parabolic approximation for the dispersion relation, on the basis of equations which arise from the Fermi's golden rule for electronic transitions from valence to conduction band, are 2.08 and 1.77 eV, correspondingly. The blue shift of band gap energy of 0.34 eV for as-deposited thin films with respect to the bulk value is due to the quantum size effects (i.e., nanocrystals behave as quantum dots) and this finding is in agreement with the theoretical predictions. During the thermal treatment the nanocrystals are sintered, the increase of crystal size being in correlation with the decrease of band gap energy. The annealed thin films are practically non-quantized. From the resistance-temperature measurements, on the basis of the dependence of ln(R/Ω) vs 1/T in the region of intrinsic conduction, the thermal band gap energy (at 0 K) of 1.85 eV was calculated.     

Novel photoluminescent hemi-disclike liquid crystalline Zn(II) complexes of [N2O2] donor 4-alkoxy substituted salicyldimine Schiff base with aromatic spacer

A series of novel hemi-disclike four coordinated distorted square planar Zn(II) Schiff base complexes containing 4-substituted alkoxy chains on the side aromatic ring [Zn (4−C_nH_2n+1O)₂ salophen], n = 14, 16, 18 and salophen = N,N′-4-methyl phenylene bis (salicylideneiminato), have been prepared and their mesogenic, photophysical properties were investigated. The phase behavior of these compounds were characterized by differential scanning calorimetry, polarized optical microscopy and variable temperature PXRD study. The ligands are non-mesogenic but the complexes exhibited an unprecedented 2D-hexagonal columnar mesophase (Col_h) in the temperature 175–185 °C range. In the mesophase (Col_h), the molecules self assemble in a columnar stack in antiparallel fashion. All λ_max of the UV–Vis absorption and photoluminescence band occurred at ca. 291–425 and 504–524 nm, respectively. The ligands are non-emissive, but on coordination with Zn(II), the complexes show intense green emission at room temperature in dichloromethane solution (∼505 nm, Φ = 20%) as well as in solid (∼522 nm, Φ = 9%) at 360 nm excitation. The DFT calculations were performed using Dmol3 program at BLYP/DNP level to obtain the stable electronic structure of the complex. A small LUMO-HOMO band gap (∼2.1 eV), presumably suggests a rather strong electronic correlation among the molecules along the column.     

Perylene diimide copolymers with dithienothiophene and dithienopyrrole: Use in n‐channel and ambipolar field‐effect transistors

Solution‐processable polymers consisting of perylene diimide (PDI) acceptor moieties alternating with dithienothiophene (DTT), N‐dodecyl‐dithienopyrrole (DTP), or oligomers of these donor groups have been synthesized. We have, in addition to varying the donor, varied the N,N′ substituents of the PDIs. The thermal, optical, electrochemical, and charge‐transport properties of the polymers have been investigated. The polymers show broad absorption extending from 300 to 1000 nm with optical band gaps as low as 1.2 eV; the band gap decreases with increasing the conjugation length of donor block, or by replacement of DTT by DTP. The electron affinities of the polymers, estimated from electrochemical data, range from ?3.87 to ?4.01 eV and are slightly affected by the specific choice of donor moiety, while the estimated ionization potentials (?5.31 to ?5.92 eV) are more sensitive to the choice of donor. Bottom‐gate top‐contact organic field‐effect transistors based on the polymers generally exhibit n‐channel behavior with electron mobilities as high as 1.7 × 10^–2 cm²/V/s and on/off ratios as high as 10⁶; one PDI‐DTP polymer is an ambipolar transport material with electron mobility of 4 × 10^–4 cm²/V/s and hole mobility of 4 × 10^–5 cm²/V/s in air. There is considerable variation in the charge transport properties of the polymers with the chemical structures. © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Electrical resistivity, optical and magnetic properties of the layered oxyselenide SmCuOSe

The electrical and magnetic properties of the tetragonal phase SmCuOSe are reported as a function of the temperature. The optical properties were studied by means of diffuse reflectance spectrum in the UV-Vis range. The electrical resistivity measurements as well as diffuse reflectance spectrum show that SmCuOSe is a semiconductor with an optical band gap (E_g) of 2.6 eV. In this phase, Cu is at its monovalent oxidation state and, as such, it does not contribute to the total magnetic moment, whereas Sm is in its 3+ oxidation state, with a large VanVleck contribution due to the admixture of the fundamental state with higher energy levels.     

Band gap tunable for near-infrared absorbing chromophores with multi-triphenylamine and tris (thieno)hexaazatriphenylenes acceptors

Two disk-like D-A type chromophores with multi-triphenylamine donors and hexaazatriphenylenes acceptors were synthesized and fully characterized by ¹H and ¹³C NMR, elemental analysis and mass spectrometry. The effects of the hexaazatriphenylene on the optical and electrochemical properties and band gap of the chromophores were investigated. As the hexaazatriphenylene core fused with three thiophene rings, the band gaps of the compounds could be tuned from 1.65 eV to 1.15 eV. The π-π* absorption peak and charge-transfer absorption peak of the hexaazatriphenylene compounds were red shifted from visible spectrum region (393 and 530 nm) to near-infrared spectrum region (542 and 756 nm). In addition, due to an increase in the π electronic coupling between electron donor and electron acceptor, the extinction coefficient (charge-transfer absorption) of the hexaazatriphenylene compound decreases 85% from 3.4 × 10⁴ mol⁻¹ dm⁻³ cm⁻¹ to 0.5 × 10⁴ mol⁻¹ dm⁻³ cm⁻¹.     

Exploring the influence of acceptor content on semi‐random conjugated polymers

A family of diketopyrrolopyrrole (DPP)‐incorporated P3HT based semi‐random copolymers was synthesized and their optical, electronic and photovoltaic properties were investigated. For the first time, the influence of acceptor content on semi‐random copolymers was explored in the broad range of 10–40% acceptor. A mixture of DPP acceptor units with different side chains (ethylhexyl and decyltetradecyl) was incorporated into each copolymer to improve solubility and film quality. Increased DPP content in the polymer backbone resulted in broadened absorption between 350 and 900 nm, resulting in a monotonic decrease in optical band gap (E_g) of the polymers from 1.49 to 1.37 eV. Highest occupied molecular orbital (HOMO) energy levels showed an increase from 10% DPP to 20–30% DPP, while decreasing for 40% DPP. V_oc values followed a consistent trend with HOMO energy levels. Semi‐random copolymers showed significantly improved photovoltaic properties compared with P3HT. Bulk heterojunction solar cells fabricated from the semi‐random copolymers blended with PC₆₁BM exhibited high short‐circuit current densities (J_sc) up to 10.29 mA/cm² and efficiencies up to 4.43%. A new method of methanol treatment was developed and applied to the semi‐random copolymers resulting in high fill factors approaching 0.70 under ambient conditions. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 3884–3892     

Semiconducting thin films of zinc selenide quantum dots

A novel chemical route for deposition of zinc selenide quantum dots in thin film form is developed. The deposited films are characterized with very high purity in crystallographic sense, and behave as typical intrinsic semiconductors. Evolution of the average crystal size, lattice constant, lattice strain and the optical properties of the films upon thermal treatment is followed and discussed. The band gap energy of as-deposited ZnSe films is blue-shifted by ≈0.50 eV with respect to the bulk value, while upon annealing treatment it converges to 2.58 eV. Two discrete electronic states which originate from the bulk valence band are observed in the UV-VIS spectra of ZnSe 3D quantum dots deposited in thin film form via allowed electronic transitions to the 1S electronic state arising from the bulk conduction band—appearing at 3.10 and 3.50 eV. The splitting between these two states is approximately equal to the spin-orbit splitting in the case of bulk ZnSe. The electronic transitions in the case of non-quantized annealed films are discussed in terms of the direct allowed band-to-band transitions with the spin-orbit splitting of the valence band of 0.40 eV. The effective mass approximation model (i.e., the Brus model) with the static relative dielectric constant of bulk ZnSe fails to predict correctly the size dependence of the band gap energy, while only a slight improvement is obtained when the hyperbolic band model is applied. However, when substantially smaller value for ε_r (2.0 instead of 8.1) is used in the Brus model, an excellent agreement with the experimental data is obtained, which supports some earlier indications that the quantum dots ε_r value could be significantly smaller than the bulk material value. The ionization energy of a deep donor impurity level calculated on the basis of the temperature dependence of the film resistivity is 0.82 eV at 0 K.     

On the influence of diameter and length on the properties of armchair single-walled carbon nanotubes: A theoretical chemistry approach

Open-ended fragments of armchair single-walled carbon nanotubes (n, n) with n = 3, 4, 5, and 6, have been modeled, with increasing lengths from 0.6 to 3 nm long. The geometries of all the studied fragments have been fully optimized. The influence of diameter and length on different electronic properties has been analyzed. These properties are electronegativity, ionization potential, electron affinities, and hardness, and all of them have been expressed as functions of the frontier orbitals. The binding energies per C atom have been calculated, using an expression that improves the previously reported ones. Their absolute values were found to steadily increase with tubes length and diameter, which allows extrapolations to obtain BE_/C atom for tubes of infinite length. The extrapolated values are 8.45, 8.65, 8.74, and 8.79 eV for armchair nanotubes with n = 3, 4, 5, and 6, respectively.     

Direct arylation synthesis of thienoisoindigo‐based low‐band‐gap polymer from asymmetric donor–acceptor monomer

Thienoisoindigo (TIG) moiety has been paid numerous attentions as an excellent acceptor building block in low‐band‐gap polymers. Herein, a new TIG‐dithiophene alternating copolymer (PTIG2T) was successfully synthesized from an asymmetric TIG‐based donor–acceptor (D‐A) monomer via the self‐condensation‐type direct arylation polymerization. PTIG2T exhibited the light absorption over 1000 nm owing to the intramolecular charge transfer in the thin film state, which corresponded to an optical band gap of 1.24 eV. The HOMO and LUMO levels of PTIG2T were determined to be −5.08 and −3.60 eV, respectively. Furthermore, the organic photovoltaic (OPV) with a PTIG2T/PC₆₁BM active layer achieved a power conversion efficiency (PCE) of 3.19%, which is one of the highest PEC achieved by OPVs with TIG‐based materials. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 430–436     

Synthesis of n-type conjugated polymers for bulk heterojunction solar cells

A new conjugated alternating donor-acceptor copolymer is synthesized from perylene diimide and the benzodithiophene derivative via the Suzuki reaction. Temperatures corresponding to the 10% weight loss of the copolymer in air and argon are 336 and 362°C. The copolymer is soluble in common organic solvents. The maxima of absorption spectra of the copolymer in chloroform solution and thin films are at 456 and 567 and at 444 and 567 nm, respectively. The optical band gap, as calculated from the onset of the absorption spectrum, is 1.74 eV, and the electrochemical band gap is 1.89 eV. The energies of HOMO and LUMO derived from the onset of the first oxidation and reduction potential of the cyclic voltamperogram are ?5.97 and ?4.08 eV. It is found that the solar cell with copolymer-to-poly(3-hexylthiophene) = 1: 1 features the best characteristics: The open circuit voltage is 0.54 V, the short circuit current is 0.976 mA/cm², the fill factor is 0.397, and the efficiency is 0.14%. The conjugated polymer based on perylene diimide belongs to the class of n-type polymers and shows promise as an acceptor material for all-polymer bulk heterojunction solar cells.