氧压对飞秒激光沉积ZnO/Si(100)薄膜光学性能的影响

利用飞秒脉冲激光沉积法在n-Si（100）单晶衬底上制备了ZnO薄膜, 分析了衬底温度、激光能量、氧压及退火处理对薄膜结构和光学性能的影响. X射线衍射结果表明, 当激光能量为15?mJ、氧压为10?mPa时, 80?℃生长的薄膜取向性最好. 场扫描电子显微镜结果显示薄膜的晶粒尺寸随激光能量的增加而减小、随衬底温度的升高而增大且退火后明显变大. 紫外-可见透射光谱显示薄膜具有90%以上的可见光透过率.光致发光谱表明当氧压为10 mPa时,除了ZnO的紫外本征峰外, 还有一波长为410 nm的强紫光峰, 当氧压增至20 mPa以上, 所有缺陷峰均消失, 只有376 nm处的紫外本征峰. 与纳秒激光法所制备的薄膜特性进行了比较, 结果表明, 虽然纳秒激光沉积所制备的薄膜具有更高的c轴取向度, 但飞秒激光沉积制备的薄膜具有更好的发光性能. 关键词： 氧化锌 飞秒脉冲激光沉积 透过率 光致发光     

Depolarization loss compensated resonator for electro-optic Q-switched solid-state laser

A novel laser resonator for compensating depolarization loss that is due to thermally induced birefringence in active rod is reported. As this new structure being applied to an electro-optic Q-switched LDA side-pumped Nd:YAG laser operating at a repetition rate of 1000 Hz, substantial reduction in depolarization loss has been observed, the output pulse energy is improved about 56% from that of a traditional resonator without compensation structure. With incident pump energy of 450 mJ per pulse, linearly polarized output energy of 30 mJ per pulse is achieved, the pulse duration is less than 15 ns, and the peak power of pulse is about 2 MW. The extinction ratio of laser beam is better than 10:1, and the beam divergence is 1.3 mrad with beam diameter of around 2.5 mm.     

The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition

Two kinds of cadmium sulfate (CdS) thin films have been grown at 600 °C onto Si(111) and quartz substrates using femtosecond pulsed laser deposition (PLD). The influence of substrates on the structural and optical properties of the CdS thin films grown by femtosecond pulsed laser deposition have been studied. The CdS thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy. Although CdS thin films deposited both on Si(111) and quartz substrates were polycrystalline and hexagonal as shown by the XRD , SEM and AFM results, the crystalline quality and optical properties were found to be different. The size of the grains for the CdS thin film grown on Si(111) substrate were observed to be larger than that of the CdS thin film grown on quartz substrate, and there is more microcrystalline perpendicularity of c-axis for the film deposited on the quartz substrate than that for the films deposited on the Si substrate. In addition, in the PL spectra, the excitonic peak is more intense and resolved for CdS film deposited on quartz than that for the CdS film deposited on Si(111) substrate. The LO and TO Raman peaks in the CdS films grown on Si(111) substrate and quartz substrate are different, which is due to higher stress and bigger grain size in the CdS film grown on Si(111) substrate, than that of the CdS film grown on the amorphous quartz substrate. All this suggests that the substrates have a significant effect on the structural and optical properties of thin CdS films. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 78.67.-n; 42.62.-b     

Diode-side-pumped AO Q-switched Tm, Ho:LuLiF laser

Diode side pumped and acousto-optical (AO) Q-switched Tm, Ho, LuLiF laser at 2 μm wavelength obtained in a ring resonator is reported in this paper. The three LDAs were placed 120° apart around the laser rod of ?4 × 20 mm dimension. A ring resonator has been used for its At free run mode, four different output loss ouplers has been tried. When the output loss is 20%, 103 mJ per pulse at 1 Hz pulse repetition frequency has been obtained with the optical to optical energy conversion efficiency of 3.17%. At the Q-switched mode, the laser pulse energy is 30 mJ with the pulse width of 417 ns. The optical to optical energy conversion efficiency is 0.93%. The slope efficiency is 6.36 and 2.90% under the two running mode, respectively.     

Modification of structure, morphology and physical properties of tin sulfide thin films by pulsed laser irradiation

This paper presents modification of tin sulfide (SnS) thin films by pulsed laser irradiation. Tin sulfide films of 1 μm thickness were prepared using chemical bath deposition (CBD) technique. The chemical bath contained 5 ml acetone, 12 ml of triethanolamine, 8 ml of 1 M thioacetamide, 10 ml of 4 M ammonium hydroxide and 65 ml of distilled water. The chemical bath was kept at a constant temperature of 60 °C for 6 h which resulted in SnS films with 500 nm thickness. By double deposition, the final thickness of SnS thin films obtained was 1 μm. Laser processing was conducted to modify the structure, morphology and physical properties of the SnS thin films. The laser specifications were pulsed Nd:YAG laser with 532 nm wavelength, 300 mJ pulse energy and 10 ns pulse width. Properties of the laser-irradiated SnS thin films were compared with the as-prepared SnS thin films. The changes in structure, morphology, optical and electrical properties of the laser-irradiated SnS thin films were described.     

Femtosecond laser ablation of polypropylene for breathable film

A polypropylene (PP) film was ablated using a femtosecond laser with a center wavelength of 785 nm, a pulse width of 184 fs and a repetition rate of 1 kHz. Increments of both the pulse energy and the shot number of pulses lead to co-occurrence of photochemical and thermal effect, demonstrated by the spatial expansion of rim on the surface of PP. The shapes of the laser-ablated PP films were imaged by a scanning electron microscope (SEM) and measured by a 3D optical measurement system (NanoFocus). And, the gas and water vapor transmission rate, mechanical properties of PP film micropatterned by fs laser pulses was characterized. Our results demonstrate that a femtosecond pulsed laser is an efficient tool for breathable packaging films in modifying the flow of air and gas, where the micropatterns are specifically tailored in size, location and number of which is easily controlled by laser processing conditions.     

Hundred mJ, sub-picoseconds, high temporal contrast OPCPA/Yb:YAG ceramic thin disk hybrid laser system

The authors have demonstrated an optical parametric chirped-pulse amplification (OPCPA)/Yb:YAG ceramic thin disk hybrid laser system having hundred mJ level pulse energy sub-picosecond pulse duration with high temporal contrast. At an input chirped-pulse energy of 3.8?mJ from an OPCPA preamplifier an output energy of 130?mJ has been generated from multipass diode-pumped Yb:YAG ceramic thin disk amplifier. A recompressed pulse duration of 450?fs with a contrast level of less than 7.2×10^?9 at ?150?ps before the main pulse has been obtained. The contrast level is the highest value achieved in Yb:YAG chirped-pulse amplification (CPA) laser system at 100?mJ level.     

Tunable mid-infrared,high-energy femtosecond laser source for glyco-protein structure analysis

We have developed a 6–12 μm mid-infrared (MIR) femtosecond laser source for glyco-protein structure analysis. The MIR femtosecond laser pulses are generated by a differential frequency generation (DFG) configuration with a combination of Ti:sapphire based regeneratively amplified femtosecond laser pulses (780 nm, 160 fs, 1 mJ) and a β-BaB₂O₄ (BBO) based optical parametric amplifier (OPA). The MIR pulse energy exceeds 4.5 μJ, where a glyco-protein molecule has resonant absorption lines due to the vibrational–rotational transitions. The pulse width is estimated to be less than 1 ps according to the cross correlation measurement between the two OPA output pulses. Using the MIR femtosecond laser pulses, we demonstrated photo-dissociation of the sialyl Lewis X (sLeX) proton added ion, which is the first time to the best of our knowledge. PACS 42.65.Re; 42.62.-b; 42.60.-b; 42.65.-k; 87.50     

Broad-band regenerative laser amplification in ytterbium-doped calcium fluoride (Yb:CaF<Subscript>2</Subscript>)

An output pulse energy of 17.3 mJ has been achieved with a diode-pumped Yb:CaF₂ regenerative laser amplifier. The bandwidth of the output pulse spectrum was 7.3 nm, being seeded with femtosecond pulses stretched to 2.2 ns. In cw operation a tuning range of 80 nm has been observed. A maximum pulse energy of 44 mJ at a repetition rate of 1 Hz has been obtained in Q-switched mode. The laser damage threshold of a Yb:CaF₂ crystal has been determined at a wavelength of 1064 nm and a pulse duration of 10 ns. PACS 42.55.Ah; 42.55.Xi; 42.70.Hj     

Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

GaN films have been grown on Si(111) substrates with a thin AlN buffer layer using pulsed laser deposition (PLD) assisted by gas discharge. The crystalline quality, surface morphology and optoelectronic properties of the deposited films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and room-temperature Van der Pauw–Hall measurements. The influence of the deposition temperature in the range 637–1037 K on the crystallinity of GaN films, the laser incident energy in the range 150–250 mJ/pulse on the surface morphology and the optoelectronic properties were systematically studied. The XRD analysis shows that the crystalline quality of the GaN films improves with increasing deposition temperature to 937 K, but further increase of the deposition temperature to 1037 K leads to the degradation of the crystalline quality. AFM results show that the surface roughness of the GaN films can be decreased with increasing laser incident energy to 220 mJ/pulse. Further increase of the laser incident energy to 250 mJ/pulse leads to an increase in the surface roughness. The optoelectronic properties of GaN films were also improved by increasing the laser incident energy to 220 mJ/pulse. GaN films which have a n-type carrier concentration of 1.26×10¹⁷ cm^-3 and a mobility of 158.1 cm²/Vs can be deposited at a substrate temperature of 937 K, a deposition pressure of 20 Pa and a laser incident energy of 220 mJ/pulse. Their room-temperature PL spectra exhibit a strong band-edge emission at 365 nm. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 73.61.Ey; 78.66.Fd     

VO2光学薄膜的脉冲激光损伤特性测试

为评价VO2光学薄膜在光电器件中的工作可靠性,搭建了可输出连续渐变激光能量密度的脉冲激光照射实验平台,运用1对1与s对12种激光损伤测试手段进行激光辐射照射实验,采用线性外推法和测量计算法2种方法对实验结果进行了处理并得出VO2薄膜在重复频率10 kHz、中心波长532 nm、脉冲宽度15 ps脉冲激光辐射下的损伤特性。结果表明:VO2薄膜损伤几率与脉冲激光的单脉冲能量密度呈线性关系,重复辐射的激光脉冲对VO2薄膜造成的损伤具有积累效应,且重复辐射的激光脉冲次数越多损伤积累效果越明显。     

Microstructural study of thin films of 5 mol% gadolinia doped ceria prepared by pulsed laser ablation

Microstructural characterization of thin films of 5 mol% gadolinia doped ceria films deposited by pulsed laser ablation in the energy range 100–600 mJ/pulse has been investigated, as deposited films were found to be nanocrystalline with preferred orientation. X-ray diffraction analysis revealed that the size of the nanocrystals of doped ceria does not vary significantly with increasing laser energy, whereas transmission electron microscopy study showed a uniform distribution of nanocrystal of 8–10 nm for energies ≤200 mJ/pulse and nanocrystals embedded in a large crystalline matrix of doped ceria for energies in the range 400–600 mJ/pulse. Although the laser-ablated films were totally free from secondary phases, lattice imaging of the large grained doped ceria showed growth-induced defects, such as dislocations and ledges.     

Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH₃COO)₂], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (λ = 248, KrF) source with energy density of 50 mJ/cm² for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature.     

Millijoule intracavity OPO driven by a passively Q-switched Nd:YVO<Subscript>4</Subscript> laser with AlGaInAs quantum-well saturable absorber

We originally demonstrate the use of an AlGaInAs periodic quantum-well absorber to achieve a quasi-continuous-wave (QCW) diode-pumped passively Q-switched Nd:YVO₄ laser with an intracavity optical parametric oscillator (OPO). With a diode-pumping energy of 35 mJ, the output pulse energy and the pulse width at 1573 nm are found to be 1.58 mJ and 26 ns, respectively. The pulse repetition rate can be up to 100 Hz with the overall OPO beam quality M² factor to be better than 1.5.     

Matrix-assisted pulsed laser evaporation of polyfluorene thin films

Poly(9,9-dioctylfluorene) (PF8) thin films have been deposited by matrix-assisted pulsed laser evaporation (MAPLE) using a KrF excimer laser. The influence of the laser fluence (50-500 mJ/cm²) and the nature of the solvent (chloroform, toluene, tetrahydrofuran) on the films properties have been studied. The chemical composition of the deposited films was investigated by Fourier transform infrared (FTIR) spectroscopy and compared with the one of spin coated films. To investigate the effect of the deposition parameters on the optical properties of the films, photoluminescence (PL) measurements were performed. Poor structural and optical properties were observed for films deposited starting from chloroform solutions. When using toluene as solvent, the spectra characteristics improved with increasing laser fluence, while wide PL spectra were observed. The characteristic emission bands of the PF8 polymer were nicely detected for films deposited starting from a tetrahydrofuran (THF) solution. Moreover, in this last case, the PF8 structure is preserved at high laser fluences, too.     

The effect of different drying methods on band gap energy and femtosecond LIDT of nano-porous anti-reflective silica thin films

In this work, nano-porous anti-reflective silica thin films are deposited on the quartz samples by dip-coating in silica sol–gel. After dip-coating, the samples are divided into three groups and each group is heated in an oven with a different drying method. The effect of the heating methods on the morphology and optical properties of the coated layers are studied by SEM imaging and measuring optical transmission of the samples. Then based on the transmission data and calculation of absorption coefficient of the layers, the band gap energy of the silica thin films is calculated. In addition, laser induced damage threshold (LIDT) of the samples are measured by using 35 fs, 100 mJ femtosecond laser pulses. It can be seen that there is a distinct correlation between band gap energy and LIDT of the samples which both of them have been affected by heating method of the coated samples.     

用于等离子体诊断的ps激光探针

 ps激光探针作为激光等离子体诊断的探针光源，它是通过两次倍频和两次受激喇曼散射，将波长为1 054nm、脉宽约为1ns激光转换成波长为308nm、脉宽小于30ps的紫外光。研究结果表明：探针光系统输出能量大于1mJ，脉宽小于30ps，均匀性较好，运行成功率大于90%，满足了激光等离子体诊断的要求。     

Picosecond laser ablation of thin copper films

The ablation process of thin copper films on fused silica by picosecond laser pulses is investigated. The ablation area is characterized using optical and scanning electron microscopy. The single-shot ablation threshold fluence for 40 ps laser pulses at 1053 nm has been determinated toF _thres = 172 mJ/cm². The ablation rate per pulse is measured as a function of intensity in the range of 5 × 10⁹ to 2 × 10¹¹ W/cm² and changes from 80 to 250 nm with increasing intensity. The experimental ablation rate per pulse is compared to heat-flow calculations based on the two-temperature model for ultrafast laser heating. Possible applications of picosecond laser radiation for microstructuring of different materials are discussed.     

采用环形再生腔结构的飞秒激光啁啾脉冲放大研究

采用环形再生腔结构的啁啾脉冲放大技术方案, 在重复频率100 Hz,单脉冲能量33.1 mJ的532 nm激光抽运下, 从钛宝石激光中获得了单脉冲能量9.84 mJ的放大输出, 对应的斜效率达33.1%.在重复频率10 Hz的情况下, 同样获得了单脉冲能量为9.64 mJ, 对应斜效率达36.8%的高效率放大结果. 通过色散补偿压缩该啁啾激光脉冲后的单脉冲能量为6.36 mJ, 脉冲宽度为59.7 fs. 测量结果表明典型的能量不稳定度为1.85%. 关键词： 啁啾脉冲放大 再生放大 飞秒激光 环形腔     

Interaction of ultra-short laser pulses with CIGS and CZTSe thin films

The thin-film solar cell technologies based on complex quaternary chalcopyrite and kesterite materials are becoming more attractive due to their potential for low production costs and optimal spectral performance. As in all thin-film technologies, high efficiency of small cells might be maintained with the transition to larger areas when small segments are interconnected in series to reduce photocurrent and related ohmic losses in thin films. Interconnect formation is based on the three scribing steps, and the use of a laser is here crucial for performance of the device. We present our simulation and experimental results on the ablation process investigations in complex CuIn_1?x Ga _x Se₂ (CIGS) and Cu₂ZnSn(S,Se)₄ (CZTSe) cell’s films using ultra-short pulsed infrared (~1 μm) lasers which can be applied to the damage-free front-side scribing processes. Two types of processes were investigated—direct laser ablation of ZnO:Al/CIGS films with a variable pulse duration of a femtosecond laser and the laser-induced material removal with a picosecond laser in the ZnO:Al/CZTSe structure. It has been found that the pulse energy and the number of laser pulses have a significantly stronger effect on the ablation quality in ZnO:Al/CIGS thin films rather than the laser pulse duration. For the thin-film scribing applications, it is very important to carefully select the processing parameters and use of ultra-short femtosecond pulses does not have a significant advantage compared to picosecond laser pulses. Investigations with the ZnO:Al/CZTSe thin films showed that process of the absorber layer removal was triggered by a micro-explosive effect induced by high pressure of sublimated material due to a rapid temperature increase at the molybdenum-CZTSe interface.