Photomaganetization in diluted magnetic semiconductors

Starting from a many–body Hamiltonian for a system of photogenerated electrons and holes, spin-split by magnetic ions in diluted magnetic semiconductors, we derive, presumably for the first time, an expression for the photomagnetization as a function of the photon power, frequency, excitonic interaction and the magnetic ion concentration. Damping of nonequilibrium carriers and spin excitons is considered phenomenologically. Our results agree qualitatively with some of the systematics of the photomagnetization observed in Hg _1?x Mn _x Te.     

Magnetic percolation in diluted magnetic semiconductors

We demonstrate that the magnetic properties of diluted magnetic semiconductors are dominated by short ranged interatomic exchange interactions that have a strong directional dependence. By combining first principles calculations of interatomic exchange interactions with a classical Heisenberg model and Monte Carlo simulations, we reproduce the observed critical temperatures of a broad range of diluted magnetic semiconductors. We also show that agreement between theory and experiment is obtained only when the magnetic atoms are randomly positioned. This suggests that the ordering of diluted magnetic semiconductors is heavily influenced by magnetic percolation, and that the measured critical temperatures should be very sensitive to details in the sample preparation, in agreement with observations.     

Bound-magnetic-polaron molecule in diluted magnetic semiconductors

We formulate a complete microscopic theory of a coupled pair of bound magnetic polarons, the bound-magnetic-polaron molecule (BMPM) in a diluted magnetic semiconductor by taking into account both the proper two-body nature of the impurity-electron wavefunction and within the general spin-rotation-invariant approach to the electronic states. Also, the model takes into account both the Heisenberg and the antiferromagnetic kinetic-exchange interactions, as well as the ferromagnetic coupling within the common spin BMPM cloud. In this manner, we correct, unify and extend the weakly interacting BMP pair models of Wolff-Bhatt-Durst (2002 Phys. Rev. B 65 235205) and the model of nonoverlapping polarons considered by Angelescu and Bhatt (2002 Phys. Rev. B 65 75211). The resulting BMPM Hamiltonian is solved within the continuum-medium and the effective-mass approximations for the donor case and the thermodynamics is derived. In our approach the thermodynamic fluctuations of magnetization of the spins within BMPM are taken as Gaussian. It appears that the fluctuations can strongly stabilize the spin-triplet state, which may constitute a precursor effect of a ferromagnetic ordering in a many-impurity system.     

Griffiths phase in diluted magnetic semiconductors

We study the effects of disorder in the vicinity of the ferromagnetic transition in a diluted magnetic semiconductor in the strongly localized regime. We derive an effective polaron Hamiltonian, which leads to the Griffiths phase above the ferromagnetic transition point. The Griffiths-McCoy effects yield nonperturbative contributions to the dynamic susceptibility. We explicitly derive the long-time susceptibility, which has a pseudoscaling form, with the dynamic critical exponent being expressed through the percolation indices.     

Polaron percolation in diluted magnetic semiconductors

We theoretically study the development of spontaneous magnetization in diluted magnetic semiconductors as arising from a percolation of bound magnetic polarons. Within the framework of a generalized percolation theory we derive analytic expressions for the Curie temperature and the magnetization in the limit of low carrier density, obtaining excellent quantitative agreement with Monte Carlo simulation results and good qualitative agreement with experimental results.     

Electron states in diluted magnetic semiconductors

One of the remarkable properties of the II–VI diluted magnetic semiconductor (DMS) quantum dot (QD) is the giant Zeeman splitting of the carrier states under application of a magnetic field. This splitting reveals strong exchange interaction between the magnetic ion moment and electronic spins in the QD. A theoretical study of the electron spectrum and of its relaxation to the ground state via the emission of a longitudinal optical (LO) phonon, in a CdSe/ZnMnSe self-assembled quantum dot, is proposed in this work. Numerical calculations showed that the strength of this interaction increases as a function of the magnetic field to become more than 30 meV and allows some level crossings. We have also shown that the electron is more localized in this DMS QD and its relaxation to the ground state via the emission of one LO phonon is allowed.     

Magnetic properties of diluted magnetic semiconductors

A review will be given of the magnetic characteristics of diluted magnetic semiconductors and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds will be considered. The relevance of the long-range interaction and the role of the carrier concentration will be emphasized.     

稀磁半导体的制备与性质

报道了稀磁半导体的制备、性质与实验研究进展，介绍了稀磁半导体的应用及发展前景．     

Coherently photoinduced ferromagnetism in diluted magnetic semiconductors

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-band-gap laser radiation. The mechanism for photoinduced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T(C) depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1K.     

Charge and magnetization inhomogeneities in diluted magnetic semiconductors

It is predicted that III-V diluted magnetic semiconductors can exhibit stripelike modulations of magnetization and carrier concentration. This inhomogeneity results from the strong dependence of the magnetization on the carrier concentration. Within Landau theory, a characteristic temperature T* below the Curie temperature is found so that below T* the equilibrium magnetization shows modulations, which are strongly anharmonic. The wavelength and amplitude of the modulation rise for decreasing temperature, starting from zero at T*. Above T*, the equilibrium state is homogeneous, but the coupling between charge and magnetization leads to the appearance of an electrically charged layer in domain walls.     

Metal–insulator transition and magnetic solitons in diluted magnetic semiconductors

The carrier-induced magnetic solitons in diluted magnetic semiconductors have been introduced by using the gauge-invariant effective Lagrangian. We have discussed the localization mechanism in the transport property by the random potentials due to the alloy potential fluctuations and long-range interactions.     

Effects of disorder on ferromagnetism in diluted magnetic semiconductors

We present results of a numerical mean-field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Within our mean-field approximation, disorder enhances the ferromagnetic transition temperature for metallic densities not too far from the metal-insulator transition. Concurrently, the ferromagnetic phase is found to have very unusual temperature dependence of the magnetization as well as specific heat as a result of disorder. Unusual spin and charge transport is implied.     

Nuclear spin manipulation in interfaces of diluted magnetic semiconductors

Nuclear spin manipulation using an interface of diluted magnetic semiconductors (DMSs) is proposed. On the basis of the first-principles electronic structure calculation, we show that the hyperfine fields at an impurity site in the interface between a DMS and a base substance is dramatically changed by an external electric field. The electric field dependence of the hyperfine fields at the impurity nucleus in the interface of (InMn)As and (GaMn)As is examined.