Chromaticity-tunable white light emission from organic multiple-quantum-well structure

Organic multiple quantum wells (MQWs) white light emitting devices are fabricated in which blue fluorescent dye, a trimer of N-anylbenzimidazole (TPBI) and orange fluorescent rubrene doped tris (8-hydroxyquinoline) Aluminum act as quantum-well light emitting layers between triphenyldiamine derivative (TPD) potential barrier layers, and aluminium complex (Alq) act as an electron transporter and green emitter. The injected carriers are confined in different quantum wells and Alq layer. The white light emission comes from a combination of photons generated in different light emitting layers. The Commission Internationale de l' Eclairage (CIE) coordinates of the emitted light are tuned by increasing the number of TPBI wells due to its low fluorescent efficiency compared with rubrene.     

Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode

Organic red emitting diode was fabricated by using 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran (DCM)-doped tri-(8-quinolitolato) aluminum (Alq₃) as emitter with the structure of G/ITO/NPB(25 nm)/DCM:Alq₃(55 nm)/Alq₃(20 nm)/LiF (1.2 nm)/Al(84 nm), (glass/indium–tin-oxide/4,4-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl, G/ITO/NPB), the wavelength of the maximal emission of which is 615 nm. By introducing cavity to Organic light emitting diode (OLED), we got pure red emitting diode with wavelength of the maximal emission of 621 nm and full-width at half-maximum (FWHM) of 27 nm. As far as we know, it is the best result in the dye-doped organic red emitting diode. We also made a device of G/ITO/NPB(25 nm)/DCM:Alq₃(29 nm)/DCM:PBD(26 nm)/Alq₃(20 nm)/LiF(1.2 nm)/Al(84 nm), in order to compare the performance of Alq₃ with that of 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) as host material. It was found that the performance of device A is better than that of C both in brightness and color purity,as well as in EL efficiency.     

Pure blue emission from undoped organic light emitting diode based on anthracene derivative

This paper presents organic light emitting diodes (OLEDs) which were fabricated by using undoped 9,10-di(2-naphthyl)anthracene (ADN) as the emitting layer, N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-amine (TPD) as the hole transporting layer, and one of tris-(8-hydroxy-quinolinato) aluminum (Alq₃), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) as the electron transporting layer. By optimization for the thickness of device, efficient pure blue organic light emitting diodes were obtained, which is attributed to the synergy of both the hole transporting layer and the electron transporting layer.     

水库型河流溶解有机物三维荧光光谱的平行因子分析

利用三维荧光光谱(EEMs)并结合平行因子分析(PARAFAC)模型,研究了2008年6月水库型河流闽江中溶解有机物(DOM)的荧光组分特征及其分布变化,以探讨河流DOM的来源、动力学过程及主要控制因素。闽江DOM包括类腐殖质组分C1(<250,325/424nm)、C2(270,395/482nm)与类蛋白质组分C3(<250,280/358nm)等三种荧光组分,其中类腐殖质组分占绝对优势。利用荧光组分可对上游三条支流之间的混合进行灵敏的指纹示踪。闽江干流DOM荧光组分的含量基本一致,反映了大型水库修建对闽江有机碳循环尚未产生显著影响。利用相关和主成分分析揭示出闽江类腐殖质组分主要来源于流域土壤的冲刷,它与吸收系数a(355)之间的关系密切;而类蛋白质组分主要在水环境中产生,可用于示踪水体中总溶解氮(TDN)的变化。利用荧光组分的多元线性回归可有效地对溶解有机碳(DOC)的含量进行示踪,表明EEMs-PARAFAC是研究河流DOM动力学过程的重要手段。     

Surface and edge emission in organic light emitting devices

We report the studies on photoluminescence (PL) and electroluminescence (EL) spectra of organic light emitting diodes (OLED) based on most widely used light emitting material, i.e., Tris-(8-hydroxyquinoline) aluminum (Alq₃). PL studies from the edges and top surface were carried out on different thicknesses of single layer of Alq₃ coated on glass substrate and the PL intensity from the edges was found to be more than that from the top surface. On the other hand EL emission intensity from the surface was found to be larger than that from the edges of the OLED device. The discrepancy in the PL and EL emission from edge and the top surfaces is discussed. The effect of the thickness of Alq₃ layer on the PL intensity and the emission spectra are also investigated.     

Theory of light scattering from semiconductor quantum dots: Excitation frequency dependent emission dynamics

We present a microscopic model for the dynamic scattering and emission spectrum of a semiconductor quantum dot, after coherent optical excitation. We investigate the spectral properties and the emission dynamics of the different scattering and emission contributions considering a V-type semiconductor quantum dot model under resonant conditions and include the coupling to LO-phonons via higher order Born approximations. This theory helps identifying the different contributions to the spectrum via time resolved calculations.     

Limits on light emission from silicon

Although silicon is an indirect semiconductor, light emission from silicon is governed by the same gener- alized Planck＇s radiation law as the emission from direct semiconductors. The emission intensity is given by the absorptance of the volume in which there is a difference of the quasi Fermi energies. A difference of the Fermi energies may result h＇om the absorption of external light （photoluminescence） or from the injection of electrons and holes via selective contacts （electroluminescence）. The quantum efficiency may be larger than 0.5 for carrier densities below 10^15 cm^-3. At larger densities, non-radiative recombination, in particular Auger recombination dominates. At all carrier densities, the relation between emission intensity and difference of the quasi Fermi energies is maintained. Since this difference is equal to the voltage of a properly designed solar cell, luminescence is the key indicator of material quality for solar cells.     

Spontaneous light emission from fractional-dimensional excitons

We apply the concept of fractional-dimensional excitons to study the process of light emission in quantum confined systems. We focus on a single parameter , known as the degree of dimensionality and which is related to the exciton coherence volume. We compute rates of light emission due to free excitons in GaAs/Al_xGa_1-xAs quantum wells as functions of and link them to experimental observations. The rates are compared with those of quantum well excitons embedded in a microcavity.     

Size-dependent light emission from mass-selected clusters

The emission of photons in the visible wavelength range from mass-selected Ag⁺ _n, Cu⁺ _n, Pt⁺ _n and Pd⁺ _n () clusters is observed. Photons are detected 10^-4 s after the cluster generation in a sputter source. The emission intensities display distinct variations with cluster size and material. The observations are interpreted in terms of the decay of metastable states which are excited during the high-energy sputtering process used for the generation of these clusters. Received: 28 October 1997 / Revised: 5 January 1998 / Accepted: 30 January 1998     

New aspects of light emission from STM

The recently discovered new mechanism of light emission from a scanning tunneling microscope (STM) compared with well-known conventional mechanisms is reviewed. The new mechanism was found for nanoscale structures which are composed of silicon (Si) dangling bonds on Si(001) surfaces. When an STM tip made of tungsten is located above Si dangling bond sites, visible light is emitted at a quantum efficiency of the order of 10^-6 photons/electron. Light is generated by radiative dipole transitions between the surface state of the tip and that of the sample. In the visible-light emission, optical selection rules still apply. The linear polarization of isochromat light emitted from the tunneling gap between an STM tip and a Si(001) sample strongly depends on the bias voltage between the tip and the sample. The results show that the ^* and ^* surface states of the sample contribute to the emission of p-polarized and s-polarized light, respectively, in accordance with optical selection rules. PACS 07.79.-v; 73.20.-r     

Spontaneous emission of light from a crystal

In the paper a quantum field model crystal — an infinite system of two-level atoms interacting with continuum modes of electromagnetic field — is proposed. Within the framework of this model the spontaneous transition of the crystal from a singly excited state to the ground state accompanied by emission of one photon is studied.     

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

Ultrafast blue light emission from SiC nanowires

Cubic silicon carbide (SiC) nanowires are synthesized in a catalyst-assisted process. The nanowires with diameter of ～ 40 nm exhibit strong blue light emission at room temperature under ultraviolet (UV) femtosecond laser excitation. The photon energy of peak emission is higher than the energy bandgap of cubic SiC which shows involvement of quantum confinement effect. The ultrafast fluorescence is deconvoluted by Monte-Carlo method. The results show two ultrafast decay processes whose lifetimes are about 26 and 567 ps respectively. The mechanisms of such ultrafast processes are discussed.     

Tunneling-current-induced light emission from individual carbon nanotubes

Tunneling electrons from a scanning tunneling microscope were used to excite light emission from individual multiwalled carbon nanotubes adsorbed on a highly ordered pyrolytic graphite surface. In the integral photon-intensity map, spatially uniform emission in the visible region was observed along the identical multiwalled carbon nanotubes. The emission spectra for the individual nanotubes showed unique profiles which differed with each nanotube, and were classified into two types. Our results indicate that the light emission is due to not the localized electronic states at the tube ends or defects but radiative transitions of electrons between the one-dimensional van Hove singularities, indicating that the two types of spectra are attributed to metallic and semiconducting nanotubes.     

Detection of organic substances adsorbed on the surface of spherical particles from light scattering characteristics by scanning flow cytometry

The possibility of using scanning flow cytometry to determine the size and refractive index of individual particles having an internal structure is demonstrated. In particular, for aqueous suspensions of polystyrene latexes adsorbing dissolved humic acids, it is shown experimentally and theoretically that the method of scanning flow cytometry is capable of rapid and high-accuracy determination of the increase in the size and the decrease in the effective refractive index of such particles in comparison with latexes whose surface is free from humic acids.     

Defect-related light emission from processed He-implanted silicon

Photoluminescence (PL) from He⁺-implanted Si (Si:He, He⁺ dose—2×10¹⁶ cm⁻², at 150 keV) is related to its microstructure; it has been tuned by processing at 720-1400 K under hydrostatic Ar pressure (HP, up to 1.2 GPa). Processing of Si:He at 720 K for 10 h results in an appearance of the D2 and D3 dislocation-related PL lines, these last of the highest intensity. Only the D1 dislocation-related line of intensity increasing with HP has been detected after processing at 920-1070 K. The D1 (of the highest intensity), D2 and D3 PL lines are observed after the treatment at 1270 K. No dislocation-related PL has been detected for Si:He processed at 1400 K. The treatment of Si:He at 720-1270 K under HP makes it possible to produce Si:He of specific microstructure resulting in strong PL at 0.81, 0.87 or 0.94 eV.     

Forward elastic scattering of light on light, \gamma+\gamma\rightarrow\gamma+\gamma

The forward elastic scattering of light on light, i.e., the reaction in the forward direction, is analyzed utilizing real analytic amplitudes. We calculate , the ratio of the real to the imaginary portion of the forward scattering amplitude, by fitting the total cross section data in the high energy region 5 GeV GeV, assuming a cross section that rises asymptotically as ln² s. We then compare , the ratio of the even portions of the pp and forward scattering amplitudes, as well as to [1], the value for Compton scattering. Within errors, we find that the three -values in the c.m.s. energy region 5 GeV 130 GeV are the same, as predicted by a factorization theorem of Block and Kaidalov [2]. Received: 18 June 2002 / Published online: 9 August 2002