Luminescence in ZnSe with Na and Al doping

Photoluminescence of ZnSe doped with Na and Al has been studied. A broad band in the blue region of the spectrum has been observed at temperatures below 150 °K. This band is apparently due to donor-acceptor pair transitions involving Al donors and Na acceptors. Temperature dependence of the luminescence indicates that the Na-acceptor level is relatively shallow.     

氧、硫掺杂六方氮化硼单层的第一性原理计算

采用基于密度泛函理论和投影缀加平面波的第一性原理计算方法, 研究了六方氮化硼单层(h-BN)中的氮原子缺陷(V_N)、氧原子取代氮原子(O_N)和硫原子取代氮原子(S_N)时的几何结构、磁性性质和电子结构.研究发现, V_N和O_N体系形变较小, 而S_N体系形变较大; h-BN本身无磁矩, 但具有N缺陷或者掺杂后总磁矩都是1 μ_B; 同时给出了态密度和能带结构.利用掺杂体系的局域对称性和分子轨道理论解释了相关结果, 尤其是杂质能级和磁矩的产生. 关键词： 六方BN单层 第一性原理计算 密度泛函理论 分子轨道理论     

Hydrogen storage of beryllium adsorbed on graphene doping with boron: First-principles calculations

Based on density-functional theory, we find that B-doped graphene significantly enhances the Be adsorption energy and prevent Be atoms from clustering. The complex of Be adsorbed on B-doped graphene can serve as a high-capacity hydrogen storage medium: the hydrogen storage capacity (HSC) can reach up to 15.1 wt% with average adsorption energy ?0.298 eV/H₂ for double-sided adsorption. It has exceeded the target specified by US Department of Energy with HSC of 9 wt% and a binding energy of ?0.2 to ?0.6 eV/H₂ at near-ambient conditions. By analyzing the projected electronic density of states of the adsorbed system, we show that the high HSC is due to the change of electron distribution of H₂ molecules and a graphene system decorated with B and Be atoms.     

First-principles insight into Li and Na ion storage in graphene oxide

The structural, electronic, and adsorption properties of Li/Na ions on graphene decorated by epoxy groups are investigated by first-principles calculations based on density functional theory.Our results show that the concentration of epoxy groups remarkably affects the structural and electronic properties of graphene.The bandgaps change monotonically from0.16 eV to 3.35 eV when the O coverage increases from 12.5% to 50%(O/C ratio).Furthermore, the highest lithiation potential of 2.714 V is obtained for the case of graphene oxide(GO) with 37.5 % O coverage, while the highest sodiation potential is 1.503 V for GO with 12.5% O coverage.This clearly demonstrates that the concentration of epoxy groups has different effects on Li and Na storage in GO.Our results provide a new insight into enhancing the Li and Na storage by tuning the concentration of epoxy groups on GO.     

First-principles calculations of BC4N nanostructures: stability and electronic structure

In this work, we apply first-principles methods to investigate the stability and electronic structure of BC₄N nanostructures which were constructed from hexagonal graphite layers where substitutional nitrogen and boron atoms are placed at specific sites. These layers were rolled up to form zigzag and armchair nanotubes, with diameters varying from 7 to 12 Å, or cut and bent to form nanocones, with 60^° and 120^° disclination angles. The calculation results indicate that the most stable structures are the ones which maximize the number of B–N and C–C bonds. It is found that the zigzag nanotubes are more stable than the armchair ones, where the strain energy decreases with increasing tube diameter D, following a 1/D ² law. The results show that the 60^° disclination nanocones are the most stable ones. Additionally, the calculated electronic properties indicate a semiconducting behavior for all calculated structures, which is intermediate to the typical behaviors found for hexagonal boron nitride and graphene.     

ZnO 极性表面及其N原子吸附机理的第一性原理研究

基于密度泛函理论的第一性原理赝势法计算了ZnO极性表面的几何结构和电子结构特性,对比分析了ZnO(0001)和ZnO(0001)表面结构弛豫、能带结构、电子态密度及N吸附ZnO极性表面的形成能情况.计算结果表明: 相对于ZnO(0001)表面,ZnO(0001)表面受结构弛豫影响更加明显,而ZnO(0001)表面完整性更好.相对于体相ZnO结构,ZnO(0001)表面的能带带隙变窄,同时价带顶附近能级非局域性增强使晶体表面的导电性能变得更好;而ZnO(0001)表面的能带带隙变宽,由于O^{-关键词： 密度泛函理论 第一性原理 ZnO极性表面 N吸附}     

The effect of electronic orbital interactions on p-type doping tendency in ZnO series： First-principles calculations

The electronic structures and optical properties of B3 ZnO series of Znelectronic structures, optical properties, pseudopotential plane-wave method, \\ \hspace*{1.9cm} p-type doping tendency,electronic structures, optical properties, pseudopotential plane-wave method, \\ \hspace*{1.9cm} p-type doping tendencyProject supported by the National Natural Science Foundation of China (Grant No~10625416).2007-04-252007-06-18The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.     

掺杂MgCNi3超导电性和磁性的第一性原理研究

从第一性原理出发，计算了MgCNi₃的电子能带结构.MgCNi₃中C 2p与Ni 3d轨道杂化使穿梭费米面上的Ni 3d能带表现出平面性，费米面落在态密度范霍夫奇异(vHs)峰的右坡上.vHs峰上大的电子态密度和铁磁相变点附近的自旋涨落是决定MgCNi₃超导电性的重要因素.研究了三种替代式掺杂对其超导电性和磁性的影响，发现电子掺杂使费米能级下滑到态密度较低的位置，导致体系转变为无超导电性的顺磁相；同构等价电子数的金属间化合物的轨道杂化，引起费米面上态密度的减少，降低了超导电性；而空穴掺杂使费米面向vHs峰值方向移动，虽然费米面上电子态密度增大可能提高超导电性，但增强了的Ni原子磁交换作用产生铁磁序，破坏了超导电性. 关键词： 电子结构 超导电性 磁性 掺杂     

First-principles calculations reveal the n-type doping difficulties of group IIIA elements in zinc blende ZnS

At present, the n-type doping behavior of ZnS is still under debate. Some groups have reported that it is difficult to obtain low-resistivity n-type ZnS, while others think it is easy. Our first-principles calculations on the n-type doping of group IIIA elements strongly support the former viewpoint. We find that, although Al_S?i, Ga_S?i, and In_S?i are shallow donors, their formation energy is very high at the conduction band minimum (CBM). Thus they can not contribute to the n-type conductivity. Other impurities are all deep donors with high formation energy at the CBM, thus having no contributions either. We believe that our results can provide an understanding of the difficulties of n-type doping of ZnS.     

Impurity centers in ZnSe:Na crystals

The influence of sodium impurity on photoluminescence (PL) spectra of ZnSe crystals doped in a growth process from a Se+Na melt is investigated. It is shown that the introduction of the impurity results in emergence of emission bands in the PL spectra due to the recombination of exciton impurity complexes associated with both donors and hydrogen-like acceptors. Apart from that, four bands generated by donor-acceptor pairs recombination and a band produced by electronic transitions from the conduction band to a shallow acceptor are discussed. As a result of the analysis it is concluded that Na impurity forms in ZnSe lattice Na_Zn hydrogen-like acceptors with activation energy of 105±3 meV, Na_i donor centers with activation energy of 18±3 meV, as well as Na_ZnV_Se and Na_iNa_Zn associative donors with activation energy of 35±3 and 52±9 meV, respectively.     

Hydrogen migration in palladium: First-principles calculations

The supercell Pd₁₆H has been investigated in order to describe the hydrogen migration in the palladium lattice, where the hydrogen atom moves between symmetric interstitial sites. Ab initio calculations of the barriers for hydrogen diffusion in relaxed and unrelaxed metal lattices have been performed in the local density approximation, and the charge transfer during motion of hydrogen has been calculated. The conclusion has been drawn that the hydrogen migration in palladium occurs predominantly along the octapore-tetrapore-octapore trajectory.     

First-principles calculations on TiO2 doped by N, Nd, and vacancy

First-principles density functional theory calculations have been carried out to investigate electronic structures of anatase TiO₂ with substitutional dopants of N, Nd, and vacancy, which replace O, Ti, and O, respectively. The calculation on N-doped TiO₂ with the local density approximation (LDA) demonstrates that N doping introduces some states located at the valence band maximum and thus makes the original band gap of TiO₂ smaller. Examining the effect of the strong correlation of Nd 4f electrons on the electronic structure of Nd-doped TiO₂, we have obtained the half-metallic ground state with the LDA and the insulating ground state with the LDA+U (Hubbard coefficient), respectively. In addition, the calculation on vacancy-doped TiO₂ with the LDA shows that a vacancy can induce some states in the band-gap region, which act as shallow donors.     

p-type characteristics of ZnSe:Li3N grown by a closed Bridgman method

We intend to search a new method to prepare high-quality and large-size p-ZnSe single crystal. In this study, ZnSe:Li₃N single crystal is grown by a vertical Bridgman method using a closed double-crucible. The photoluminescence (PL) spectrum of the as-grown ZnSe:Li₃N crystal at 8 K shows very strong donor–acceptor pair (DAP) and very weak exciton emissions. In order to activate doped Li₃N, ZnSe:Li₃N single crystal is annealed at high temperature in Zn-saturated atmosphere. By selecting suitable annealing conditions, a very strong I₁ emission line related to shallow acceptor is observed. The capacitance–voltage (C–V) characteristics indicate that the annealed ZnSe:Li₃N single crystal is a p-type conduction. Furthermore, the acceptor concentration and ionization energy are estimated by examining the temperature dependences of the free-to-acceptor (FA) emission, the behaviors of Li and N are investigated, and the new emission at 2.34 eV is discussed.     

C,N, O原子在金属V中扩散行为的第一性原理计算

基于密度泛函理论, 采用第一性原理计算方法研究了C, N, O原子在金属V中的扩散行为. 首先, 讨论了C, N, O原子在V体心立方晶格中的间隙占位情况, 分析了其在间隙位置与V晶格的相互作用, 并探究了这种相互作用对金属V电子结构的影响. 研究结果表明: C, N, O原子在V的八面体间隙位置更为稳定, 并且C, N, O原子的2p电子与V的3d电子之间有比较强的成键作用; C, N, O原子的扩散势垒分别为0.89, 1.26, 0.98 eV, 并得出了其扩散系数表达式; 最后, 通过阿仑尼乌斯关系图对比了三者在V中扩散系数的大小, 并计算出体系温度在500–1100 K之间时其在V中的扩散系数, 计算结果与实验值基本符合.     

Al和N共掺p型Zn1-xMgxO电子结构的第一性原理计算

采用密度泛函理论下的第一性原理平面波超软赝势方法,对Zn1-xMgxO超晶胞和掺杂Al,N后的Zn1-xMgxO超晶胞分别进行了优化计算.结合广义梯度近似计算了Al和N共掺杂后Zn1-xMgxO的能带结构、电子态密度和Mulliken电荷布居分布.计算表明:掺入N原子的2p态电子为Zn1-xMgxO价带顶提供空穴载流子,使Zn1-xMgxO价带顶向高能方向移动;掺入Al原子的3p态电子则与N原子的2p态电子在费米能级附近发生轨道杂化,使费米能级处价带能级展宽,Al和N共掺杂可获得p型Zn1-xMgxO.     

B/N掺杂对双层石墨烯电子特性影响的第一性原理研究

利用平面波超软赝势方法研究了B/N原子单掺杂和共掺杂对双层石墨烯电子特性的影响.对掺杂双层石墨烯进行结构优化,并计算了能带结构、态密度、分波态密度等.分析表明,层间范德瓦尔斯相互作用对双层石墨烯的电子特性有比较明显的影响;B/N原子单掺杂分别对应p型和n型掺杂,会使掺杂片层的能带平移,使得体系能带结构产生较大分裂;双层掺杂的石墨烯能带结构与掺杂原子的相对位置和距离有关,对电子特性有明显的调控作用.其中特别有意义的是,B/N双层共掺杂在不同位置情况下会得到金属性或禁带宽度约为0.3 eV的半导体能带.     

第一性原理计算N掺杂对InNbO_4电子结构的影响

宽带隙(3.83 e V)半导体光催化材料InNbO_4在紫外光作用下具有分解水和降解有机物的性能.最近实验发现了N掺杂InNbO_4具有可见光下分解水制氢的活性.为了从理论上解释这一实验现象,本文采用基于密度泛函理论的第一性原理计算了N掺杂对InNbO_4的能带结构、态密度和光学性质的影响.分析能带结构可得,N掺杂后在InNbO_4的价带(O 2p)上方形成N 2p局域能级,导致电子跃迁所需的能量减小.吸收光谱表明,N掺杂后InNbO_4的光吸收边出现了红移,实现了可见光吸收.