Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and threedimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.     

Coherent Zeeman resonance from electron spin coherence in a mixed-type GaAs/AlAs quantum well

Coherent Zeeman resonance from electron spin coherence is demonstrated in a Lambda-type three-level system, coupling electron spin states via trions. The optical control of electron density that is characteristic of a mixed-type quantum-well facilitates the study of trion formation as well as the effects of many-body interactions on the manifestation of electron spin coherence in the nonlinear optical response.     

Magnetophonon resonance in a GaAs quantum well with AlAs/GaAs superlattice barriers at high filling factors

The magnetotransport of a high-mobility 2D electron gas in single GaAs quantum wells with AlAs/GaAs superlattice barriers is studied at high filling factors. For the selectively doped structures under study in the temperature range from 10 to 25 K, magnetoresistance oscillations periodic in the inverse magnetic field are observed with their frequency being proportional to the Fermi wave vector of the 2D electron gas. The experimental results are explained by the interaction of the 2D electron gas with leaky interface acoustic phonons.     

Upconversion of photoluminescence due to subband resonances in a GaAs/AlAs multiple quantum well structure

We have investigated the upconversion of photoluminescence (PL) due to subband resonances in a simple GaAs(15.3 nm)/AlAs(4.5 nm) multiple quantum well embedded in a p–i–n diode structure. The systematic measurements of the PL spectra and the calculated results of the interband transition energies as a function of electric field strength reveal that the PL bands from the electron subbands with n=3 (E3) and n=4 (E4) sharply appear under the first-nearest-neighbor resonance conditions between the E1 and E3 subbands and the E1 and E4 subbands, respectively, owing to the carrier injection to the E3 and E4 subbands from the E1 subband. This result indicates that the resonant tunneling due to the subband resonance is a dominant mechanism for the carrier population in the higher lying subbands. Utilizing these subband resonances, we have demonstrated the upconversion of PL from the E3 and E4 subbands under the excitation condition of the fundamental interband transition between the E1 and the n=1 heavy-hole subbands.     

Modified excitonic resonances in GaAs/AlAs multiple quantum well heterostructures with ultrathin barriers

Excitonic resonance structures in GaAs/AlAs multiple quantum well heterostructures with varying barrier-layer thicknessesL _B down to 1.3 nm are investigated for two sets of samples with the nominal well widths ofL _Z =9.2 and 6.4 nm, by 2K photoluminescence excitation spectroscopy. The observed resonance energies of then=1 heavyhole (1 hh) and light-hole (1 lh) free excitons imply that quantum confinement effects persist at least down to the decreased barrier-layer thickness ofL _B =1.3 nm. This result is inconsistent with the red shifts expected from the simple well-coupling theory within the one-band Kronig-Penney model at the point. Instead, blue shifts of 6–8 meV (8–17 meV) are observed for the 1 hh (1 lh) excitonic resonance peaks whenL _B is decreased from 10 to 2 nm. A relative decrease of the oscillator strength of the 1 lh transition compared to the 1 hh transition is also observed asL _B is decreased. These results manifest important effects of the indirect-gap barrier material for the actual wavefunction matching across the interface and the breakdown of the envelope function approach to GaAs/AlAs quantum well heterostructures with ultrathin barriers.     

Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well

An electro-optical trap for spatially indirect dipolar excitons has been implemented in a GaAs/AlAs Schottky diode with a 400-Å-wide single quantum well. In the presence of a bias voltage applied to a gate, the trap for excitons appears upon ring illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears because of the screening of the applied electric field by nonequilibrium carriers directly in the excitation region. Excitons are collected inside the ring owing to the ambipolar drift of carriers and dipole-dipole exciton repulsion in the optical pump region. For dipolar excitons thus collected in the center of the ring electrooptical trap, a significant narrowing of the luminescence line that accompanies an increase in the density of excitations indicates the collective behavior of dipolar excitons.     

Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current–voltage measurements are presented for two MBE-grown structures clad with Si-doped Al_0.45Ga_0.55As layers onn ⁺  -GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.     

Delocalization of phonon-plasmon modes in GaAs/AlAs superlattices with tunnel-thin AlAs barriers

The technique of Raman spectroscopy has been used to investigate doped (n-type) and undoped GaAs/AlAs superlattices with AlAs barrier thicknesses from 17 to 1 monolayers. The peak corresponding to the scattering by a two-dimensional plasmon was found in the Raman spectrum of a doped superlattice with relatively thick barriers. The position of the experimental peak corresponded to the value calculated in the model of plasma oscillations in periodic planes of a two-dimensional electron gas. The electron tunneling effects played an increasingly prominent role as the AlAs barrier thickness decreased. The peaks corresponding to the scattering by coupled phonons with three-dimensional plasmons were found in the Raman spectra for a superlattice with an AlAs thickness of 2 monolayers; i.e., the delocalization of coupled modes was observed. In this case, the folding of acoustic phonons was observed in the superlattice under consideration, indicative of its good periodicity, while the localization of optical phonons in GaAs layers was observed in undoped superlattices with an AlAs thickness of 2 monolayers.     

Negatively charged quantum well polaritons in a GaAs/AlAs microcavity: An analog of atoms in a cavity

The negatively charged exciton (X-) is observed to strongly couple with the microcavity- (MC-)confined photons in a GaAs quantum well containing a two-dimensional electron gas with 0相似文献   

Magneto-optical studies of GaAs/AlAs quantum wells

We present a magnetoreflectivity study of three GaAs/AlAs multiple quantum wells with widths 75, 100 and 150 Å. At T = 5K, the reflectivity spectra exhibit features associated with the excitons as well as interband Landau transitions. The slopes of these transitions imply that the electrons are confined in the GaAs layers. In addition, experimental values for the exciton binding energies are determined from the zero field intercepts of the Landau transitions.     

Oscillations of the magnetoresistance of a two-dimensional electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers in a microwave field

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces oscillations of this magnetoresistance, which are periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the frequency range under study depends on the microwave radiation power.     

GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells grown on (4 1 1)A GaAs substrates by MBE

Effectively atomically flat GaAs/AlAs interfaces over a macroscopic area (“super-flat interfaces”) have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observed at 4.2 K from each GaAs/AlAs or GaAs/(GaAs) (AlAs) QW grown on (4 1 1)A GaAs substrate. The full-width at half-maximum (FWHM) of a PL peak for GaAs/AlAs QW with a well width ( ) of 4.2 nm was 4.7 meV and that for GaAs/(GaAs) (AlAs) QW with a smaller well width of 2.8 nm (3.9 nm) was 7.6 meV (4.6 meV), which are as narrow as that for an individual splitted peak for conventional GaAs/AlAs QWs grown on (1 0 0) GaAs substrates with growth interruption. Furthermore, only one sharp peak was observed for each GaAs/(GaAs) (AlAs) QW on the (4 1 1)A GaAs substrate over the whole area of the wafer (7 7 mm ), in contrast with two- or three-splitted peaks reported for each GaAs/AlAs QW grown on the (1 0 0) GaAs substrate with growth interruption. These results indicate that GaAs/AlAs super-flat interfaces have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) QWs grown on the (4 1 1)A GaAs substrates.     

Magnetoresistance oscillations due to Zener tunneling and microwave radiation in a 2D electron gas in GaAs quantum well with AlAs/GaAs superlattices barriers

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces magnetoresistance oscillations periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the covered frequency range depends on the microwave radiation power.