Electron emission and charging of natural diamond under irradiation with medium-energy electrons

The processes of charging of a natural diamond crystal irradiated by an electron beam with primary electron energies in the range 1–30 keV have been experimentally investigated. The charging kinetics has been studied as a function of the irradiation dose and the electron-emission properties of the crystal. The following fundamental characteristics have been determined: the second crossover equilibrium energy of the beam electrons and the values of high-voltage surface potentials and accumulated charges.     

On the sputtering mechanism in the energy range of Rutherford backscattering

Sputtering rates for 100 keV protons incident normally on Cu and Pt films deposited on various base materials were determined from the energy spectrum of the backscattered protons. Sputtering is partly caused by ions backscattered from the base material.     

Penetration range and backscattering ratio of low-energy electrons in metals

The accuracy of the Ashley's optical-data model [J.C. Ashley, J. Electron Spectrosc. Relat. Phenom. 50 (1990) 323] for describing the energy loss rate and inelastic mean free path of low-energy electrons in Al and Cu has been examined through the use of Ashley's model for calculating the electron penetration range. The latter has also been calculated using the empirical expressions reported by Iskef et al. [Phys. Med. Biol. 28 (1983) 535] and Gryzinski excitation function. The resulting range of penetration is used for determining the electron backscattering coefficients via the use of Vicanek and Urbassek theory [Phys. Rev. B 44 (1991) 7234] where the transport cross-sections are obtained from Rouabah et al. [Appl. Surf. Sci. 255 (2009) 6217] approximation. Besides the electron backscattering coefficients have been calculated from Monte Carlo simulation in which the inelastic scattering processes are handled using Ashley dielectric approach. It is found that the use of Ashley's optical model via Monte-Carlo method gives backscattering coefficients more accurate than those obtained via Vicanek and Urbassek theory. This confirms the accuracy of Ashley's optical model and shows that the Monte-Carlo method is much more accurate and precise than the Vicanek and Urbassek semi-empirical approach.     

Dependence of electron and positron backscattering coefficients on Al film thickness

The backscattering coefficient of 1-4 keV electron and positron beams normally incident impinging on Al thin film targets is stochastically modeled within a Monte Carlo frame work. The aim of the present paper is to study the behavior of the backscattering coefficient as a function of the Al film thickness. To the authors’ knowledge, no theoretical or experimental work on the dependence of the positron backscattering coefficient on film thickness targets has been reported so far. It is found that the backscattering coefficient for both electron and positron beams presents different behaviors when the Al film thickness belongs to the nano-scale. Beyond this scale, the behavior becomes qualitatively similar.     

Simulation of positron backscattering and implantation profiles using Geant4 code

For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.     

Electron — positron quantum droplets

A new physical object, electron-positron quantum droplet, is suggested. Structure, stability and dynamics of such objects are discussed. The analysis is based on the non-relativistic self-consistent local-density approximation. An essential role of many-body effects in the formation of the droplets is demonstrated. Their properties are compared with the known physical objects such as metal clusters and clusters of excitons in a solid.     

Electron and positron scattering from atomic potassium

The present coupled-channels-optical method (CCO) provides a comprehensive theoretical calculation of electron-potassium atom and positron-potassium atom scattering at intermediate energies. The CCO calculations for various physical observables are compared with the convergent close-coupling method (CCC) and other theoretical results, as well as experimental data where available. The CCO provides good to fair agreement with results from the convergent close coupling calculations, which are considered to be the state of the art for alkali atoms in the electron channel.     

Structure determination of the NiSi2(111) surface with medium-energy ion backscattering from individual monolayers

The surface structure of the epitaxial NiSi₂/Si(111) system has been determined applying new ion scattering methods. By detection of backscattered ions with ultrahigh energy resolution the signals from successive atomic layers are separated. Angular distributions of the yield of ions mainly backscattered from a single Ni monolayer directly provide the (sub)surface atom coordinates. In addition, analysis of the energy losses in the first atomic layer, which depend on the specific ion trajectories, allows an independent structure determination. Using either of the two methods, the NiSi₂(111) surface is found to have a bulklike topology, i.e. it is terminated by a Si---Ni---Si triple layer. Other surface structure models, such as termination by a Si double layer, are ruled out. The outermost Ni---Ni and Ni---Si interlayer spacings are found to be contracted with respect to their bulk values in the strained silicide by 0.05 ± 0.02 and 0.12 ± 0.02 Å, respectively.     

Electron focusing in backscattering from single-crystal Si(100)

Diffraction patterns produced by quasi-elastically backscattered electrons focused in a thin single-crystal Si(100)2×1 near-surface layer have been studied. The measurements performed in the 0.6–2-keV range are compared with calculations made in the single-scattering cluster approximation. This model is shown to describe adequately the experiment. An analysis is made of the relation among the diffraction patterns observed for different silicon faces, and of the effect of the primary-electron beam orientation. The relations governing the focusing of quasi-elastically backscattered electrons escaping from the crystal along the main crystallographic directions have been established. The various aspects of the effect for backscattered electrons undergoing inelastic interaction with the electron subsystem of the crystal have been investigated. Fiz. Tverd. Tela (St. Petersburg) 40, 1364–1369 (July 1998)     

Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors

Backscattering coefficients for electrons normally impinging on Si, Ge, GaN, GaAs and InSb targets have been calculated by using the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] for incident energies ≤5 keV. Electron range has been calculated from various semi-empirical analytical expressions. The cross-sections used to describe the electron transport are determined via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently reported by Rouabah et al. [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The results may be seen as the first predictions for low-energy electron backscattering coefficients impinging on GaN, GaAs and InSb semiconductors. The models used in the calculation of the electron range affect both the accuracy and behaviour of the electron backscattering coefficients.     

Electron and positron planar channeling radiation from diamond

Channeling-radiation spectra have been obtained from a diamond with ≈ 54.5 MeV electrons and positrons. Theoretical calculations are found to fit the experimental results well for electrons, but significant discrepancies exist between theoretical predictions and the positron data.     

Electron density and positron trapping at a vacancy

The redistribution of valence electrons at a vacancy in aluminium is calculated in the Thomas-Fermi approximation. This result is then used in evaluating the annihilation characteristics of positrons trapped at vacancies. A good agreement with experiments is established.     

Electron and positron induced processes. POSMOL 2013

POSMOL 2013, the international meeting on electron and positron induced processes comprising the XVII International Workshop on Low-Energy Positron and Positronium Physics and the XVIII International Symposium on Electron-Molecule Collisions and Swarms, was held at Kanazawa Bunka Hall, Kanazawa, Ishikawa, Japan, from 19–21 July 2013. The XVII Workshop encompassed all aspects of positron, positronium and antiproton interactions with electrons, atoms, molecules and solid surfaces, and topics related to these, whereas the XVIII Symposium encompassed all aspects of electron interactions with molecules in both gaseous and condensed phases. Particular topics include studies of electron interactions with biomolecules, electron induced surface chemistry and the study of plasma processes. Recent research on the study of electron swarms was also highlighted.     

Electron–positron annihilation into three pions and the radiative return

The Monte Carlo event generator PHOKHARA, which simulates hadron and muon production at electron–positron colliders through radiative return, has been extended to final states with three pions. A model for the form factor based on generalized vector dominance has been employed, which is consistent with presently available experimental observations.     

Electron and positron work functions of Cr(100)

We report measurements of the electron and positron work functions of submonolayer contaminated single crystal surfaces of Cr(100) in ultra high vacuum. The positron work function ø₊ is obtained by measuring the spectrum of slow positrons reemitted by the Cr(100) surface when it is bombarded with keV energy positrons. The electron work function ø_- is measured relative to Al(100) by comparing the target biases at which the slowest emitted positrons are recollected by the target. We obtain ø₊ = ?1.76(10) eV and ø_- = 4.46(6) eV for our Cr(100) surface using the value ø_- = 4.41(3) eV for Al(100) reported by Grepstad, Gartland and Slagsvold. The ø₊ value is in agreement with the ?2.2 eV calculated by Nieminen and Hodges. The positronium work function for Cr implied by these results is ?4.10(10) eV; the positronium negative ion (Ps^-) work function for this surface is calculated to be + 0.37(7) eV. A search for Ps^- showed that at a 90% confidence level less than one in 10³ thermalized positrons reaching the Cr surface are emitted as Ps^-. The slow positron emission spectrum was observed not to change over the 70–300 K range in contrast to recent theoretical predictions.     

Kikuchi-band formation in medium-energy electron-diffraction patterns

To reveal the mechanism of Kikuchi-band formation, the total Si(100) diffraction pattern produced by 2-keV quasi-elastically backscattered electrons is compared to model calculations made in the single-scattering approximation for clusters constructed with different numbers of close-packed (110) planes. The formation of the Kikuchi bands is shown to be governed by two types of electron scattering in a crystal. The dominant contribution to enhanced electron-scattering intensity within a band comes from the forward-focusing effect as the electrons move along the numerous interatomic directions in the (110) planes. The other mechanism responsible for the sharp edge regions in the Kikuchi bands involves electron scattering from the nearest planes. It is proposed to use the specific profile of the Kikuchi bands in estimating the shape and size of light-element crystallites forming during initial stages of island-film growth. Fiz. Tverd. Tela (St. Petersburg) 41, 411–417 (March 1999)     

Electron and positron nonthermality effects on the formation of damped solitons in collisional multi-component plasmas

Electrostatic damped field characteristics in non-thermal fast positron and electron plasma having fluids of positive and negative pair ions have been discussed when collisional frequencies parameters are taken into account. The damped and forced form of Kadomtsev-Petviashvili (DKP) equations have been obtained. The plasma parameters effects of electron density ratio, the negative ionic density ratio, the pair ionic charge ratio, the density of positron ratio, the collisional frequencies, ion mass ratio and the fast non-thermality on the electrostatic damped and forced field formations, as observed in D-F -ionosphere and laboratory experiments have been investigated.