Zn_(1-x)Mn_xSe的低温磁化率和自旋玻璃现象

用超导量子干涉器(SQUID)磁强计对稀释磁性半导体Zn_(1-x)Mn_xSe(0.1≤x≤0.50)的低温低场直流磁化率作了测量,测量温度从4.2K到30K,测量磁场为15Oe。当x≥0.30时,从磁化率-温度曲线的浑圆峰值,观察到了自旋玻璃的转变。自旋玻璃的转变温度T_f,对x=0.30,0.40,0.50,分别为10.5K,16K,19.5K。给出了顺磁相和自旋玻璃相的相图。比较了Zn_(1-x)Mn_xSe和Cd_(1-x)Mn_xSe的自旋玻璃转变温度,发现对同样的Mn离子浓度,Zn_(1-x)Mn_xSe的T_f高于Cd_(1-x)Mn_xSe的T_f,用交换作用的理论作了讨论。     

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1−xO/ZnO Heterostructures

In this study, we have numerically investigated the conduction band structures, the carrier densities and the electron probability densities of pseudomorphic grown Be_xZn_1?xO/ZnO heterostructures using self-consistent solutions of one-dimensional, non linear Schrödinger–Poisson equations. In the calculations, two-dimensional electron gas (2DEG) formations were observed in the studied heterostructures and the effects of layer thickness and Be-mole fraction (x) of Be_xZn_1?xO barrier layer on 2DEG were described. For possible transistor device applications, 10 nm Be_xZn_1?xO barrier layer structure with x = 0.08 has been suggested. For this structure, we examined the variation of electron mobility with temperature using analytical calculations. Because of the polarization-induced low carrier densities, we found that the background impurity scattering has a strong effect on total electron mobility even at room temperature.     

应变层异质结ZnS/ZnSe、ZnS/ZnS_xSe_(1-x)和ZnSe/ZnS_xSe_(1-x)价带带阶的研究

采用基于原子球近似下线性Ｍｕｆｉｎ－Ｔｉｎ轨道（ＬＭＴＯ－ＡＳＡ）的平均键能计算方法，研究了以ＺｎＳｘＳｅ１－ｘ为衬底，沿（００１）方向外延生长的应变层异质结ＺｎＳ／ＺｎＳｅ、ＺｎＳ／ＺｎＳｘＳｅ１－ｘ和ＺｎＳｅ／ＺｎＳｘＳｅ１－ｘ的价带带阶值ΔＥｖ（ｘ）．研究表明，ΔＥｖ（ｘ）值随衬底合金组分ｘ单调变化．且两者的关系是非线性的．在此计算结果与其它理论计算和实验结果符合较好．     

Third-order optical nonlinearities of Zn_(1-x)Mg_xO thin films

Materials with large optical nonlinearities have receivedincreased attention in the past years because they arecrucial for the development of components for all-opticalsignal processing, and have many potential applicationsin electro-optic and integrated optical devices, nonlinearoptical switching devices and real-time coherent opticalsignal processors[1-3]. ZnO, as a representatively wideband gap semiconductor, triggers research interestingon optical nonlinear-response in recent years, owning…     

Zn_(1-x)Mn_xTe/ZnTe超晶格的多声子拉曼谱

Ｚｎ１－ｘＭｎｘＴｅ／ＺｎＴｅ超晶格的多声子拉曼谱陈辰嘉李海涛王学忠李晓莅孙允希王晶晶周赫田（北京大学物理系北京１００８７１）Ｍｕｌｔｉ┐ｐｈｏｎｏｎＲａｍａｎＳｐｅｃｔｒａｏｆＺｎ１－ｘＭｎｘＴｅ／ＺｎＴｅＳｕｐｅｒｌａｔｉｃｅＣｈｅｎＣｈｅｎｊ...     

Effect of Γ–X Intervalley Scattering on the Electron Transport in Double-Barrier GaAs/AlAs(001) Heterostructures

Volt-ampere characteristics, transmission spectra of electrons, and tunneling times are calculated for a three-valley model by the multiband method used for studying the quantum transport in GaAs/AlAs(001) semiconductor heterostructures. The effect of –X intervalley scattering of electrons on the heteroboundaries of the structures is examined.     

Anisotropy of Two-Dimensional Electron and Hole Mobilities in (0 0 1) GaAs/Al x Ga 1− x As Heterostructures Under Uniaxial Stress

Transport properties of two-dimensional electron and hole gas at (0 0 1) GaAs/Al x Ga 1 m x As heterointerface in [1 1 0] and [1 m 1 0] directions have been investigated for the first time under in plane uniaxial compression up to 5 kbar. Resistivity, Shubnikov-de Haas oscillations and Hall effect were measured and carrier densities and mobilities were determined. The in-plane uniaxial compression significantly modifies the energy spectrum of p-GaAs/Al x Ga 1 m x As that leads to strong anisotropy of hole mobility under compression. In the case of the n-type heterostructure uniaxial compression causes only change of the carrier concentration and the corresponding small change of the initial mobility anisotropy, determined by anisotropic surface roughness scattering.     

Al和N共掺对Zn_(1-x)Mg_xO光学性质的影响

基于密度泛函理论第一性原理方法计算了Al和N共掺对Zn1-xMgxO在紫外光波段和可见光波段光学性质的影响.计算结果表明:光学性质变化主要发生在低能区,在高能区光学性质基本保持不变.介电函数虚部、吸收光谱和消光系数计算表明,Al和N共掺后Zn1-xMgxO的光学吸收边产生红移,对部分紫外光和可见光的吸收增强.介电函数实部和反射光谱计算表明,Al和N共掺后Zn1-xMgxO的反射峰强度增大,静态介电常数ε1(0)从2.64增大为3.23.能量损失谱的计算表明,Al和N共掺后Zn1-xMgxO的等离子体共振频率发生蓝移,共振频率的振幅增大.     

Double Electron Processes in Collisions of Partially Stripped Ions C^q＋ （q = 1-4） with Helium

The multi-electron processes are investigated for 17.9-120 keV/u C^1＋, 30-323 keV/u C^2＋, 120-438 keV/u ^C3＋, 287-480 keV/u C^4＋ incident on a helium target. The cross-section ratios of double electron （DE） process to the total of the single electron （SE） and the double electron process （i.e. SE＋DE）, the direct double electron （DDI） to the direct single ionization （DSI） as well as the contributions of DDI to DE and of TI to DE are measured using coincidence techniques. The energy and charge state dependences of the measured cross-section ratios are studied and discussed.     

Zn_(1-x)Mo_(1-y)Si_yO_4∶Eu_x~(3+)红色荧光粉的合成及发光性能研究

通过固相法合成LED用Zn-Mo1-ySiyO4:Eu3+x红色荧光粉(0.05≤x≤0.30,0≤y≤0.09),讨论了助熔剂、温度等合成条件对Zn1-xMo1-ySiyO4:Eux3+荧光粉发光性质的影响.当烧结温度为800℃时,可以生成ZnMoO4纯相目标产物.由于荧光粉的结晶度和粒径随烧结温度的升高而增大,所以随着烧结温度的升高,样品的发光强度有所提高;当助熔剂Na2CO3的用量约为4%时的样品发射光的强度比未使用助熔剂时明显增强,说明在此体系中,当Eu3+取代Zn2+时,Na2CO3充当助熔剂的同时,Na+起到了电荷补偿作用.荧光光谱实验显示Zn1-xMo1-ySOyO4:Eux3+能够被393和464 nm的紫外光激发,在616 nm处发出强烈的红色荧光.当Eu3+掺杂量约为20%mol时,Zn1-xMo0.97Si0.03O4:Eux3+荧光粉在616 nm处的发光强度达到最大.在引入Si4+离子后能显著增强Zn1-xMoO4:Eux3+的发光强度,组成为Zn0.80 Mo0.97Si0.03O4:Eu0.203+.样品(激发峰值为393 nm)的荧光强度要比Y2O2S:Eu0.053+荧光粉的发光强度强2倍.所以这种荧光物质能够更好地适用于白光LED.     

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

We theoretically explore the manipulation of a temporal electron-spin splitter by a δ-potential in an embedded magnetic-electric-barrier microstructure (EMEBM), which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on the top and bottom of an InAs/Al_xIn_1−xAs heterostructure, respectively. Spin polarization of the dwell time remains, even though a δ-potential is inserted by atomic-layer doping. Both the magnitude and sign of the spin-polarized dwell time can be manipulated by changing the weight or position of the δ-potential. Thus, a structurally controllable temporal electron-spin splitter can be obtained for spintronics device applications.     

Asymmetry and separation of spin tunneling time in ZnSe/Zn1-xMnxSe multilayers

We investigate characteristics of spin tunneling time in ZnSe/Ze_1-xMn_xSe multilayers under the influence of both an electric field and a magnetic field. The results indicate that the tunneling time shows complicated oscillations and significant spin separation for electrons with different spin orientations traversing semimagnetic semiconductor heterostructures. It is also shown that the tunneling time exhibits obvious asymmetry in opposite tunneling directions for electrons tunneling through asymmetric heterostructures, which mainly occurs in resonant regions. The degree of the asymmetry of the tunneling time is not only spin-polarization dependent but also external-field induced. Received 10 July 2001     

非对称耦合量子阱Zn1-xCdxSe/ZnSe的二次谐波产生及其光学各向异性研究

采用反射式二次谐波产生方法对非对称Ⅱ-Ⅵ族耦合量子阱Zn1-xCdxSe/ZnSe的非线性光学特性进行了研究。与衬底相比,非对称量子阱在可见光波段的二次谐波信号增强一个量级以上。测量和比较了室温下量子阱样品与衬底样品的荧光光谱,研究了在入射光和反射光均为p偏振,以及入射光和反射光分别为s偏振和p偏振两种情况下,二次谐波强度随样品旋转方位角的变化关系,可见其有非常明显的二阶非线性一光学各向异性。     

Coupling effects of layers on spin transport in ZnSe/Zn 1 - x Mn x Se heterostructures

By use of the scattering matrix method, we investigate the coupling effects of layers on spin-polarized transport through semimagnetic semiconductor heterostructures with triple paramagnetic layers. Due to the coupling between double non-magnetic layers or among triple paramagnetic layers, spin tunneling exhibits interesting and complex features, which are determined by the structural configuration, the external fields as well as the spin orientations. It is shown that for electrons with either spin orientation tunneling through the symmetric or asymmetric heterostructures with triple paramagnetic layers, transmission resonances can approach the optimum under several biases. Moreover, for asymmetric structures, the resonant enhancement can occur under both several positive and negative biases. The spin-dependent resonant enhancement is also clearly reflected in the current density. In addition, for spin electrons traversing the multilayer heterostructure, the resonant splitting occurs in the transmission, which shows rich variations with the bias. These interesting results may be helpful to the development of spintronic devices. Received 28 April 2001     

Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

Fractal dimension study of polaron effects in cylindrical GaAs/AlxGa1−xAs core–shell nanowires

Polaron effects in cylindrical GaAs/Al_xGa_1−xAs core–shell nanowires are studied by applying the fractal dimension method. In this paper, the polaron properties of GaAs/AlxGa1-xAs core–shell nanowires with different core radii and aluminum concentrations are discussed. The polaron binding energy, polaron mass shift, and fractal dimension parameter are numerically determined as functions of shell width. The calculation results reveal that the binding energy and mass shift of the polaron first increase and then decrease as the shell width increases. A maximum value appears at a certain shell width for different aluminum concentrations and a given core radius. By using the fractal dimension method, polaron problems in cylindrical GaAs/Al_xGa_1-xAs core–shell nanowires are solved in a simple manner that avoids complex and lengthy calculations.     

含负折射率层的多层体系的反常光子隧穿

研究了多层体系含负折射率层的光学传输特性,通过传输矩阵方法,给出了体系透射率的一般表达式,并讨论了含负折射率层的四层结构在入射角大于临界角时的反常光子隧穿现象。当体系参量完全匹配时,对于任意入射光波长及大于临界角的入射,透射率均为1;仅衬底层不匹配时,对于给定的衬底参量,透射率和入射波长无关,仅和入射角相关。对于TM波,存在多层体系的布儒斯特角,使得透射率等于1。对于TE波则没有类似现象;在衬底不匹配的情况下,提高出射端的折射率将增加体系的透射率;中间层的厚度或者折射率不匹配时,透射率关于匹配位置对称分布且随着失谐的增加指数衰减,随着入射角的增加,衰减速度加快。     

硅衬底生长的InGaN/GaN多层量子阱中δ型硅掺杂n-GaN层对载流子复合过程的调节作用

为了解决在单晶硅衬底上生长的InGaN/GaN多层量子阱发光二极管器件发光效率显著降低的问题,使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为n型层释放多层界面间的张应力。采用稳态荧光谱及时间分辨荧光谱测量,提取并分析了使用该方案前后的多层量子阱中辐射/非辐射复合速率随温度（10~300 K）的变化规律。实验结果表明引入δ-Si掺杂的n-GaN层后,非辐射复合平均激活能由（18±3）meV升高到（38±10）meV,对应非辐射复合速率随温度升高而上升的趋势变缓,室温下非辐射复合速率下降,体系中与阱宽涨落有关的浅能级复合中心浓度减小,PL峰位由531 nm左右红移至579 nm左右,样品PL效率随温度的衰减受到抑制。使用周期性δ型Si掺杂的GaN取代Si均匀掺杂的GaN作为生长在Si衬底上的InGaN/GaN多层量子阱LED器件n型层,由于应力释放,降低了多层量子阱与n-GaN界面、InGaN/GaN界面的缺陷密度,使得器件性能得到了改善。