具有穿插界面结构的高效绿光有机电致磷光器件

以传统有机电致磷光器件ITO/NPB/CBP∶Ir(ppy)₃/BAlq/Alq₃/LiF/Al为研究对象,在NPB/CBP∶Ir(ppy)₃、CBP∶Ir(ppy)₃/BAlq及BAlq/Alq₃界面处构造交互穿插结构。器件的光电性能测试表明:交互穿插结构一方面能够降低电流密度,减少高电流密度下磷光猝灭中心的形成;另一方面能增加载流子复合界面面积,从而分散界面三线态激子,降低三线态-三线态激子的猝灭。此外,界面凸起的存在还有利于器件的光耦合输出。实验结果表明:当穿插厚度为10 nm,器件的最大电流效率达到34.0 cd/A,与传统器件的电流效率18.7 cd/A相比,提高了55%。     

有机多层量子阱的能量转移

采用多源有机分子气相沉积系统制备了不同类型的有机多量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型、光致发光的特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/8-羟基喹啉铝(Alq₃)有机量子阱为Ⅰ型量子阱结构，NPB/Alq₃和BCP/Alq₃有机量子阱为Ⅱ型量子阱结构.荧光光谱的研究结果表明，PBD/Alq₃和BCP/Alq₃量子阱结构可以实现PBD，BCP向Alq₃能量完全转移，而NPB/Alq₃量子阱结构，NPB和Alq₃之间只是部分能量转移.文中对影响能量转移的因素进行了讨论. 关键词： 有机量子阱 能量转移     

采用复合空穴注入层提高有机电致发光器件的性能

制备了以Ag/SAM/m-MTDATA为复合空穴注入层的NPB/Alq₃双层异质结发光器件,研究了器件的性能并与传统的器件进行了对比。考察了银膜厚度的变化对器件性能的影响。研究了光谱窄化以及微腔效应对器件的影响。研究结果表明:在ITO表面制备4-FTP自组装单分子膜修饰的5 nm厚的金属银膜,可以在保持阳极透明性的基础上,增强空穴的注入,改善界面的形貌,进而提高器件性能。制备的ITO/Ag/SAM/m-MTDATA/NPB/Alq₃/LiF/Al器件的启亮电压为4 V,最 大电流效率为6.9 cd/A, 最大亮度为34 680 cd/m²(12 V);优于以ITO为阳极的对比器件(25 300 cd/m² @12 V)。     

LiF插层对有机发光二极管磁场效应的调控

制备了有LiF插层的有机发光二极管,以八羟基喹啉铝（Alq₃）作为电子传输层,N, N′-二苯基-N, N′-二(1-萘基)-1,1′-联苯-4,4′-二胺（NPB）作为空穴传输层.通过改变Alq₃与NPB间LiF插层的厚度,研究了不同温度下器件的光电特性及电致发光的磁场效应.测量结果表明:LiF插层可以影响器件内部载流子的输运和激发态的形成.较厚的插层阻碍了空穴的传输,使器件的电流效率变低.但实验中发现, 关键词： LiF插层结构 磁场效应 三重态激子     

PVK空穴传输层对有机电致发光器件性能的影响

以聚乙烯基咔唑poly(N-vinylcarbazole)(PVK)旋涂层为空穴传输层,着重研究了PVK层厚度对双层器件氧化铟锡(ITO)/PVK/tris-(8-hydroxyquinoline)aluminum(Alq₃)/Mg:Ag/Al器件性能的影响。测试结果表明,当Alq₃层厚度一定时(50nm),只有PVK层为适当厚度(18nm)时双层器件才有最优良的器件性能,即最低的起亮电压,最高的发光亮度和效率。同时对比了不同PVK层厚度的PVK/Alq₃双层器件之间以及PVK/Alq₃与N,N′-bis-(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine(NPB)/Alq₃双层器件寿命的差异。测试结果表明,尽管越厚的PVK层对应的PVK/Alq₃双层器件发光性能并不是越好,但器件寿命越长。原因是器件Alq₃层内形成的Alq³⁺越少,因此器件稳定性越好;而PVK/Alq₃与NPB/Alq₃双层器件寿命的差异来自不同空穴传输层的制备工艺和能级结构的不同。     

蓝色有机发光材料LiBq4的合成及其发光特性

蓝色有机发光材料的开发对于实现有机发光二极管(OLED)的全彩色化具有十分重要的意义.报道了蓝色有机发光材料8-羟基喹啉硼化锂(LiBq₄)的合成及提纯,研究了LiBq₄的光致发光特性,并用LiBq₄作为发光材料制备了蓝色有机发光器件,研究了电子传输层Alq₃的厚度及空穴缓冲层CuPc对器件电流-电压和亮度-电压特性的影响.结果表明,LiBq₄的光致发光峰值波长为452nm,器件ITO/PVK:TPD/LiBq₄/Alq₃/Al的电致发光光谱峰值波长位于475nm处,在25V工作电压下其最高亮度约为430cd/m².但CuPc的加入加剧了器件中载流子的不平衡注入,导致器件性能恶化.通过调整Alq₃的厚度,同时在Alq₃和Al阴极之间加入LiF薄膜以提高电子注入效率,获得了较为理想的实验结果.     

室温下磁场对基于Alq3的有机电致发光器件的影响

制备了ITO/NPB/LiF/Alq₃/LiF/Al的器件,测量了该组器件效率和亮度的磁效应.结果表明,在50 mT磁场中,当LiF缓冲层厚度为0.8 nm时,器件的效率最大增加了12.4%,磁致亮度最大变化率17%.同时,制备的磷光器件ITO/NPB/LiF/CBP:6 wt% Ir(ppy)₃/BCP/Alq₃/ LiF/Al,在50mT磁场作用下,当LiF缓冲层的厚度为0.8 nm时,器件的效率最大增加12.1%.在Alq_{3 关键词： 有机发光 磁场 效率 磁致亮度}     

Alq3和CdSeS量子点掺杂体系的载流子输运性质的研究

利用飞行时间法(time-of-flight)测定了有机小分子发光材料8-羟基喹啉铝(Alq₃)与CdSeS量子点掺杂体系的载流子迁移率.研究了Alq₃和CdSeS混合薄膜的载流子迁移率与外加电场强度和量子点浓度的变化关系.研究结果表明,CdSeS量子点的掺杂浓度的增加会引起薄膜样品位置无序的增加.除此之外,Alq₃和CdSeS量子点界面之间的电荷转移作用,以及在量子点之间进行跳跃传输的电子数量都会改变样品的载流子迁移率. 关键词： 3')" href="#">Alq₃ CdSeS量子点 飞行时间法     

功能层厚度对叠层有机电致发光器件出光性能影响的数值研究

功能层厚度是影响有机电致发光器件出光效率的主要因素之一,故获得不同功能层厚度对器件出光特性的影响规律是制备高性能器件的重要基础. 本文基于薄膜光学原理、电偶极子辐射理论及Fabry-Pérot微腔原理,建立了结构为glass/ITO/N,N0-bis（naphthalen-1-yl）-N,N0-bis（phenyl）-benzidine（NPB）/tris（8-hydroxyquinoline）aluminum（Alq₃）/molybdenum trioxide（MoO₃）/NPB/Alq₃/Al的叠层有机电致发光器件的光学模型,系统地研究了各个功能层厚度对叠层有机电致发光器件出光强度的影响,得到了功能层厚度对器件出光强度影响的规律. 该模型的建立与所获得的结果可对深入了解叠层有机电致发光器件的工作机理以及制备高性能的器件提供一定的帮助. 关键词： 叠层有机发光器件 出光特性 厚度 数值研究     

不同微腔结构有机电致发光器件的电致发光光谱模拟

采用传输矩阵法对有机电致发光器件(OLED)、微腔有机电致发光器件(MOLED)和耦合微腔有机电致发光器件(CMC)的电致发光光谱(EL)进行了模拟计算。OLED、MOLED和CMC的结构分别为glass/ITO(134 nm)/NPB(74 nm)/Alq₃(62 nm)/Al、glass/DBR/ITO(134 nm)/NPB(74 nm)/Alq₃(62 nm)/Al和glass/DBR₁/filler/DBR₂/ITO(134 nm)/NPB(74 nm)/Alq₃(62 nm)/Al。通过模拟计算发现:OLED光谱呈宽带发射,主峰峰值位于561 nm,肩峰峰值位于495 nm;MOLED光谱呈单峰窄带发射,峰值位于534 nm;CMC光谱呈双峰窄带发射,峰值分别位于520 nm和556 nm。MOLED光谱的色纯度最高;OLED与MOLED的光谱积分面积基本相同;CMC的光谱积分面积是OLED或MOLED的1.1倍,发光效率最高。结果表明,采用双耦合微腔结构可有效提高...     

The influence of exciton behavior on luminescent characteristics of organic light-emitting diodes

We used N,N′-bis-(1-naphthyl)-N,N′-1-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB), 4,4′-N,N′-dicarbazole-biphenyl (CBP) and tris(8-hydroxyquinoline) aluminum (Alq₃) to fabricate tri-layer electroluminescent (EL) device (device structure: ITO/NPB/CBP/Alq₃/Al). In photoluminescence (PL) spectra of this device, the emission from NPB shifted to shorter wavelength accompanying with the decrease of its emission intensity and moreover the emission intensity of Alq₃ increased relatively with the increase of reverse bias voltage. The blue-shifted emission and the decrease in emission intensity of NPB were attributed to the polarization and dissociation of NPB excitons under reverse bias voltage. The increase of emission intensity of Alq₃ benefited from the recombination of electrons (produced by the dissociation of NPB exciton) and holes (injected from the Al cathode).     

Exciton dissociation in organic light emitting diodes at the donor-acceptor interface

Experimental in situ photoluminescence and transient photovoltage results show that the interface formed by N, N{'}-Bis(naphthalene-1-yl)-N, N{'}-bis(phenyl) benzidine (NPB) and tris(8-hydroxyquinoline) aluminum (Alq{3}) acts as an exciton dissociation site. Because of this dissociation effect, excitons formed in NPB at or within a diffusion length of the interface tend to dissociate before they radiatively decay to generate blue light. This suggests that the action of the "hole-blocking layer" used in indium tin oxide\NPB\hole-blocking layer\Alq{3}\aluminium to promote blue light emission from the NPB is more "exciton dissociation inhibition" than "hole blocking."     

Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence (PL) is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increa...     

Dynamics of excitons and carriers at the NPB/C60 interface by transient photocurrents

The transient photocurrent (TPC) technique was performed to explore the dynamics of excitons and carriers at organic active layer/buffer layer interfaces. A special device with ITO/PEIE/NPB/C₆₀/Al structure was designed to study the interfacial processes at the NPB/C₆₀ interface. An external electrical field was provided to neutralize the built-in electrical field of the device. Interestingly, a new phenomenon was observed, wherein the polarity of the TPC changed from negative to positive under an external electrical field. The initial negative signal was ascribed to exciton separation by the built-in field in C₆₀, and the subsequent positive signal can be attributed to the diffusion of electrons that accumulate at the NPB/C₆₀ interface. TPC measurements shown that further increasing the external electrical field causes polarity to change twice. Analyzing the two changes in polarity revealed that the NPB did not only extract holes from C₆₀ but also provided an effective interface for exciton dissociation.     

Luminescence properties of type-II quantum well light-emitting diodes formed with NPB and Alq3

The organic quantum well devices which are similar to the type-II quantum well of inorganic semiconductor have been fabricated. In the electroluminescence, the blue shift of spectrum with increasing applied voltage is observed, which is interpreted by exciton confinement effect and polarization effect, and the generation of exciton, including carrier injection and energy transfer, is discussed. This energy transfer from barrier to well is studied by photoluminescence and is interpreted in terms of Förster energy transfer. The electromodulation of photoluminescence demonstrates the quenching mainly comes from the dissociation of exciton in NPB and that in Alq₃ is very stable.     

激子复合区厚度对有机磁效应的影响

在常规型有机发光二极管的基础上, 通过改变发光层tri-(8-hydroxyquinoline) aluminum (III) (Alq₃)厚度, 研究了激子复合区厚度对有机发光二极管磁效应的影响.测量了器件在不同温度及偏压下电致发光及注入电流在外加磁场作用下的变化, 着重研究了低温下的有机磁电导效应和有机磁电致发光效应.实验发现, 低温(50 K)高磁场 (500 mT)下, 器件表现出随Alq₃厚度的减薄, 磁电导值由正到负再到正的非单调变化.利用磁场调控的超精细相互作用、 磁场抑制的三重态激子-电荷反应以及激子在界面的淬灭效应, 对有机磁电导在低温下表现出的现象进行了定性的解释.实验结果表明, 通过改变激子复合区的厚度, 可以实现对激子浓度的有效调节, 进而实现对有机磁电导和磁电致发光效应的调节. 该研究进一步丰富了有机磁效应的实验现象, 同时提供了一种调控有机磁效应的手段. 关键词： 激子复合区 激子浓度 有机磁电导 有机磁电致发光     

Photoinduced charge injection in the metal/organic interface studied by transient photovoltage measurements with bias

Transient photovoltage of ITO/organic/Al cells is studied under different bias polarities and voltages.It is found that for an ITO/NPB/Al cell,light incidence on the Al side induces more bias-dependent transient photovoltage variation when the photovoltage is positive than when it is negative.However,for an ITO/C60 /Al cell,the variation characteristics of transient photovoltage is reversed.These results support the previously proposed mechanism that Al could inject charges into the organic layer upon photon excitation,indicating that the absorption of electrode can also contribute to photovoltaic effect.     

同时掺杂磷光和荧光染料的白色有机电致发光器件性能研究

以磷光染料Ir(piq)₂(acac)作为发光掺杂剂,掺入空穴传输性主体材料NPB中得到红色发光层,荧光材料TBP掺入到主体CBP中作为蓝色发光层,制备了结构为ITO/NPB/NPB：Ir(piq)₂(acac)/CBP/CBP：TBPe/BCP/ALq/Mg：Ag的双发光层白色有机电致发光器件.其中ALq₃、未掺杂的NPB和CBP及BCP层分别作为电子传输层、空穴传输层和激子阻挡层.实验中通过调节发光层厚度及Ir(piq)_{2关键词： 磷光 激子阻挡层 有机电致发光}     

Spike in transient photocurrent of organic solar cell: Exciton dissociation at interface

The effect of exciton interfacial dissociation on transient photocurrent (TPC) in a single-layer organic solar cell is investigated within a time-dependent device model. The spike observed in TPC experiments is attributed to exciton dissociation at the electrode/organic interface. In comparison with the observed negative signal of transient photovoltage (TPV), the spike more directly reflects the charge processes at the interface. Moreover, numerical results show that the spike of TPC is sensitive to the voltage applied on the device and the hole mobility of the organic semiconductor. Further investigation on the spike by the favorable TPC technique is suggested to provide details about the exciton and carrier processes at the interface.