矩形磁性纳米点动力学反磁化过程的微磁学研究

采用微磁学模拟方法研究了初始态为C形磁结构的矩形CoFe纳米点在方波脉冲场作用下的动力学反磁化过程.研究发现,随着脉冲场强的增强,磁体的反磁化模式发生了改变.当场强较弱时反磁化过程通过畴壁移动-单涡旋的形成和移动来完成;当场强较大时反磁化过程模式转变为畴壁移动-双涡旋的形成与移动;在更强的场强下反磁化过程通过畴壁的移动-多涡旋的形成与湮没来实现.由于反磁化模式随场强的变化而改变,反磁化时间随场强的增大出现振荡变化现象. 关键词： 动力学反磁化过程 反磁化时间 微磁学模拟     

Co纳米线磁矩反转动态过程的有限元微磁学模拟

采用有限元微磁学模拟方法研究了Co纳米线在不同外加恒磁场下磁矩的翻转过程.研究结果表明在直径为10 nm的Co纳米线内,经过一定的形核时间将在其一端形成一个反向磁畴.磁畴壁的类型为横向畴壁,该畴壁将在一外加恒定磁场的驱动下匀速地从一端运动到另一端.畴壁的运动速度与外加磁场大小呈线性关系.在H为1000 kA/m时,发现在纳米线的两端均会形成一个“头对头”的反向磁畴.计算结果表明,畴壁内磁矩的方向旋转一个周期所导致的畴壁运动的距离相同,与外加磁场强度无关. 关键词： 磁性纳米线 微磁学模拟 磁畴 横向畴壁     

磁性多孔纳米片微波磁导率的微磁学研究

本文基于微磁学理论模拟了多孔α-Fe纳米片的微波磁性能. 与无纳米孔洞的纳米片对比, 发现由于纳米孔洞的引入导致退磁能发生改变, 破坏了纳米片原有的磁畴分布, 使纳米片内部存在数目更多、体积更小、局域有效场强不同的磁畴, 从而增加了高频磁损耗峰的数目. 由于部分损耗峰的相互交叠, 为在10–30 GHz范围拓宽电磁波吸收的带宽提供了潜在可能性. 模拟结果表明多孔纳米片的磁损耗峰数目、强度、峰宽和频率分布受孔洞排布方式和孔洞数目的影响. 由于纳米孔洞的存在可以降低材料的密度, 模拟结果表明多孔α-Fe纳米片可用于开发吸收频段宽、重量轻的电磁波吸收材料.     

磁性纳米颗粒膜的微磁学模拟

用微磁学方法对磁性纳米颗粒膜的磁特性进行了模拟，采用的模型是由122个磁性纳米颗粒组成的面心立方(fcc)结构体系.结果表明：在该体系中，偶极相互作用对体系的静态磁结构的影响显著，而交换相互作用的影响表现不明显.在此基础上，本文还采用有效媒质理论计算分析了磁性合金颗粒不同体积比时颗粒膜的磁谱和表征电磁参量发生显著变化的逾渗现象和逾渗阈值.并完成了对高磁损耗磁性纳米颗粒膜的材料设计. 关键词： 微磁学 纳米颗粒膜 逾渗阈值 磁导率 材料设计     

磁存储器环形带切口结构自由层磁化反转的微磁模拟

针对基于磁性隧道结的赝自旋阀磁随机存储器, 使用带斜面切口环形结构自由层, 抛弃采用厚度改变矫顽力的方式, 降低了磁性隧道结的面积电阻, 改进了垂直电流磁随机存储器. 通过集成工艺中淀积的二次效应生成磁环的切口, 利用微磁学方法计算分析了自由层的磁化反转特性, 结果表明该模型具有低串扰、低面积电阻、高磁阻率以及较强的抗干扰性能. 关键词： 自由层结构 磁化翻转 微磁 VMRAM     

切边纳米铁磁盘对中磁涡旋旋性的磁场调控

铁磁纳米盘中的磁涡旋态因稳定性高,并且其面内磁化的旋转方向具有天然的二向性(顺时针(CW)和逆时针(CCW)),可以作为信息存储的一个比特单元而成为最近研究的热点.基于磁涡旋旋性的信息存储要求人们能够独立地控制磁涡旋的旋转方向.从旋性的角度考虑,在一对纳米盘中可能出现四种磁涡旋基态,即(CCW, CCW),(CCW, CW),(CW, CCW)和(CW, CW).本文通过引入厚度不同且切边的纳米磁盘对,并对其施加面内磁场来实现对四种涡旋基态的独立控制,并通过微磁学模拟证明了这种方法的可行性.     

不同易轴取向下对Nd_2Fe_(14)B/Fe_(65)Co_(35)磁性双层膜的微磁学模拟

运用三维数值模拟计算方法,计算了膜面外不同易轴取向下Nd2Fe14B/Fe65Co35磁性双层膜的磁滞回线、角度分布、成核场、矫顽力和磁能积等,并与实验结果进行了细致比较.计算结果表明:只有当易轴与外场之间的夹角β=0?时,才有明显的成核现象,其成核场和矫顽力均随着软磁相厚度Ls的增加而降低;随着易轴偏角β的增大,剩磁逐渐减小,磁滞回线的方形度降低,从而磁能积减小,在Ls=1 nm,β=0?时磁能积(561.61 kJ/m3)最大.理论计算所得的磁滞回线与实验磁滞回线符合得很好,剩磁和矫顽力的理论值与实验值相差很小.     

缺陷铁纳米环体系的磁特性研究

采用Monte Carlo方法与快速傅里叶变换微磁学方法相结合的方式,模拟含不同缺陷的铁纳米环的磁滞回线、组态、剩磁等磁特性.研究发现:缺陷的大小与位置明显影响系统的磁化过程.当缺陷较小时,系统存在双稳态特征,此性质与无缺陷系统类似;当缺陷增大时,系统过渡状态增加,双稳态特征不再明显.进一步的研究发现,缺陷系统的剩磁随缺陷半径D的增大而增大.上述结果与非对称纳米环系统的磁特性类似,并可以通过零场状态下的系统自旋组态的变化加以解释.当系统圆心与缺陷中心的间距Y增加时,剩磁与Y的关系是非线性的:剩磁先随Y的增大而增大,后随Y的增大而减小.模拟结果可用零场状态下不同Y值的组态变化进行详细解释.上述研究结果表明,缺陷可以明显影响铁纳米环的磁特性.     

小缺陷铁纳米环的磁特性

用蒙特卡罗方法与快速傅里叶变换微磁学相结合的方法模拟小缺陷铁纳米环的磁化动力学.研究发现小缺陷铁纳米环的磁滞回线出现"双稳态"特征,与实验结果一致.能量研究表明:涡旋态出现的区间为能量局域极小区间.缺陷系统的剩磁随着缺陷位置的变化而变化:剩磁随着Y值的增加先增大后减小,并在中间区域保持相对稳定.系统的自旋组态可以解释上述现象.     

Sm(Co,Cu,Fe,Zr)z反磁化过程的微磁学分析

通过微磁学有限元方法研究了微结构对各向异性的Sm(Co,Cu,Fe,Zr)z磁性能的影响， 并 对不同温度下的退磁曲线进行了计算.计算结果表明，矫顽力随着2∶17相晶粒尺寸的增大 而增大，随1∶5晶界相厚度的增大而减小；通过减小晶界相厚度或增大晶粒尺寸可以有效提 高 磁能积.反磁化的物理机制主要为形核机制，主要表现为首先在晶界相形成反磁化核，随 着 磁场的增大反磁化核不断长大，最后导致整个磁体的磁化反转；而当温度升高时，晶界相逐 渐变成非磁性相，使得反磁化核难以形成，因此出现了反常的矫顽力温度依赖关系. 关键词： 微磁学 有限元 微结构 磁性能     

Visualization of the inverse layer-plus-island growth in Fe islands on W(110) substrate

Many experiments have been conducted so far to control the growth mode in heterostructures, but success has only been restricted to strain-controlled growth systems. In this study, using the shadow mask deposition technique, we have changed the growth mode in the Fe/W heterostructures from the layer-plus-island growth mode to island-plus-layer growth mode. From this, we have ignited the competing growth between forming the islands and wetting the first layer, and have directly visualized the island-plus-layer growth by controlling the annealing temperature of the system. This unconventional growth mode may play an important role in studying the hidden boundaries of hetero-interfaces.     

Requirements for soft magnetic underlayer (SUL)—Micromagnetic simulations of single-pole-type write heads and SUL systems

Landau-Lifshitz-Gilbert micromagnetic models were used to analyze the head field distributions and high-frequency responses for various soft magnetic underlayer thicknesses (t-SUL) and saturation magnetization flux densities (B_s) of single-pole-type (SPT) head-SUL systems. It was found that B_s of 10-12 kG and t-SUL of 30-45 nm would be sufficient for the examined head and perhaps for most next generation head-SUL systems. Antiferromagnetic coupling in the SUL affects the head and SUL magnetization and, eventually, the head field. With regard to the head magnetization response, it was found that the magnetization under the coil responded first, while the response at the main pole tip was quite slow, even compared with the head field. The main pole tip of the head was fully saturated and the main pole yoke was almost saturated, while the SUL was not saturated in the examined head-SUL system.     

直流磁控溅射Si和玻璃衬底Fe/Co多层膜的磁性能比较

对直流磁控溅射Si和玻璃衬底［Co_t/Fe_3t］₅(t=2, 3, 4, 5nm)多层膜的磁性能进行了比较.对于t相同但衬底不同的样品，实验发现饱和磁化强度相差很小，但是矫顽力却相差很大.对矫顽力差异的理论分析表明，多层膜的粗糙度和畴壁类型是引起这种差异的主要原因.     

直流磁控溅射Si和玻璃衬底Fe/Co多层膜的磁性能比较

对直流磁控溅射Si和玻璃衬底［Co_t/Fe_3t］₅(t=2, 3, 4, 5nm)多层膜的磁性能进行了比较.对于t相同但衬底不同的样品,实验发现饱和磁化强度相差很小,但是矫顽力却相差很大.对矫顽力差异的理论分析表明,多层膜的粗糙度和畴壁类型是引起这种差异的主要原因. 关键词： Fe/Co多层膜 磁性能 矫顽力     

Quantum-well states and resonances in thin single-crystal layers of noble metals on W(110) substrates

This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.     

Monte Carlo simulations of hydrogen adsorption on the W(110) and Mo(110) surfaces

Kinetics of low-temperature hydrogen and deuterium adsorption on W(110) and Mo(110) surfaces have been studied by the real-time Monte Carlo simulations. Recently reported qualitative dependence of the adsorption characteristics on variation of the H₂ flux is described in terms of the dynamical equilibrium between incident and desorption fluxes and improved conditions for accommodation for the hydrogen molecules at high incident fluxes. The role of the intrinsic precursor state in hydrogen dissociative adsorption is analyzed.Received: 16 February 2004, Published online: 28 May 2004PACS: 82.65. + r Surface and interface chemistry; heterogeneous catalysis at surfaces - 02.50.Ng Distribution theory and Monte Carlo studies - 82.20.Wt Computational modeling; simulation     

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.     

Ferromagnetism in the thermodynamically stable monolayer Fe(110) on W(110), coated by Ag

Ferromagnetic order in the thermodynamically stable, pseudomorphic monolayer Fe(110) on W(110), coated by Ag, was studied in situ in UHV using Conversion Electron Mössbauer Spectroscopy (CEMS) and Torsion Oscillation Magnetometry (TOM). Films near the monolayer coverage, prepared at 475 K, consist of nearly independent monolayer and double-layer patches. The properties of monolayer patches are nearly independent of the mean film thickness resulting in excellent conditions to determine the true monolayer properties. The Curie temperature is reduced toT _{c, mono}= 282 K = 0.27 T_c,bulk, the ground state hyperfine field is reduced toB _hf(0)=11.9 T = 0.35B _hf,bulk(0) and the magnetic moment per atom is enhanced to(0) = 2.53 _B=1.14(0)_bulk. Remanent magnetization is detected forT 260 K=0.92T _{c, mono}, square loop magnetization forT 230 K=0.82T _{c, mono}. Unusual properties of the phase transition are detected by the combination of both experimental techniques.