Preliminary results on sol-gel processing of 〈100〉 oriented Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> thin films using diol-based solutions

A novel sol-gel method is used here for the synthesis of air-stable and precipitate-free diol-based sols of 0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN-PT). Sols containing a 15 mol% lead excess have been used for the preparation of PMN-PT thin films. The films were deposited onto (111)Pt/TiO₂/SiO₂/(100)Si substrates, and crystallised in oxygen by Rapid Thermal Processing (RTP), using different temperatures and soaking times. Single perovskite films are obtained when treated at temperatures between 600 and 700°C for 6 s. Those crystallised at other temperatures contain a secondary pyrochlore phase. This phase also appears in the films treated at 650°C with soaking times longer than 6 s. PMN-PT films with a 〈100〉 preferred orientation were prepared by using a PbTiO₃ seeding layer onto the substrate. These PMN-PT films present relaxor-type electrical properties. Dielectric permittivity, , shows significant dispersion. Its temperature dependence presents a broad maximum at 110–130°C, which position shifts towards higher temperatures with frequency. Ferroelectric hysteresis loops show high values of saturation polarisation but very low remanence. The piezoelectric activity of the films has been tested by the measurement of their local piezoelectric hysteresis loops.     

Direct crystallization of perovskite phase in PMN-PT thin films prepared by polyvinylpyrrolidone modified sol-gel processing and their properties

A modified sol-gel processing has been developed by using polyvinylpyrrolidone (PVP) as modifier and lead nitrate as lead source to synthesize (1−x)Pb(Mg_1/3,Nb_2/3)O₃-xPbTiO₃ (PMN-PT) thin films with x=0.23-0.43. With PVP additions, perovskite phase could directly crystallize from amorphous films at the temperature as low as 430 °C via bypassing the metastable phase-pyrochlore and crystallinity was significantly enhanced. The PVP addictives have been optimized with molecular weight <630 K and the ratio of PVP monomer/PMN-PT at 0.25-1.0. XPS analysis indicates that the chemical states of the elements in the well-crystallized PMN-PT films are close to the literature data for the PMN-PT single crystals and the films possess highly desired electrical and optical properties.     

Structure and properties of (1−x)(0.6Pb(Zn1/3Nb2/3)O3-0.4Pb (Mg1/3Nb2/3)O3)-xPbTiO3 thin films with perovskite phase promoted by polyethylene glycol

The preferential formation of a pyrochlore structure is a knotty problem in the preparation of Pb(Zn_1/3Nb_2/3)O₃ (PZN)-based thin film materials and its presence is significantly detrimental to the dielectric and piezoelectric properties. In this study, 40 mol% of PZN was replaced with Pb(Mg_1/3Nb_2/3)O₃ (PMN) for obtaining a perovskite composition around a morphotropic phase boundary (MPB), (1−x)(0.6PZN-0.4PMN)-xPT ((1−x)PZMN-xPT, PT: PbTiO₃) where x = 0.23. The thin films with this composition were prepared with a polyethylene glycol (PEG) modi-fied sol-gel method on LaAlO₃ substrates. The microstructural evolution of the films on heat treatment was examined with X-ray diffraction. With the aid of PEG, the formation of the pyrochlore phase was suppressed and the perovskite phase formed directly from the amorphous gel film. The multilayer films with a thickness around 0.25 μm showed a single perovskite phase without any detectable pyrochlore structure. Microscopic images showed uniform grain size of a few tens of nanometers. The role of the polymer dramatically promoting the perovskite phase was investigated with the aid of X-ray photoelectron spectroscopy and thermal analysis. The dielectric constant of the obtained film was 4160 at 1 kHz. The film demonstrated typical ferroelectric hysteresis loops and exhibited excellent piezoelectric performance.     

Coupled TG-MS study on the intermediate for formation of PbO(t) from PbO(O) in synthesis of perovskite PMN-PT

Pb(OH)₂ was previously proposed as an intermediate in the synthesis of PMN [Pb(Mg_1/3Nb_2/3)O₃] and PMN-PT [0.9Pb(Mg_1/3Nb_2/3)O₃-0.1PbTiO₃] from a mixture of PbO, Nb₂O₅, Mg(NO₃)₂·6H₂O (w/w₀) TiO₂ by the modified mixed oxide method based on TG/DSC and XRD data. Coupled TG-MS of the precursor reveals that the intermediate is Pb₆O₅(NO₃)₂, not Pb(OH)₂ because the evolved gas was nitric oxide and oxygen, not water.     

Preparation and Properties of Highly Oriented Sr0.3Ba0.7Nb2O6 Thin Films by a Sol-Gel Process

We succeeded in the preparation of epitaxial or highly oriented strontium-barium niobate (Sr_0.3Ba_0.7Nb₂O₆) thin film by a sol-gel process. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 900°C on MgO(1 0 0) was oriented with c-axis perpendicular to the substrate surface. Sr_0.3Ba_0.7Nb₂O₆ film sintered at 700°C on SrTiO₃(1 0 0) was an epitaxial and oriented with c-axis in parallel to the substrate surface. Transmittance of Sr_0.3Ba_0.7Nb₂O₆ film (film thickness: 144 nm) was more than 60% at the range from 400 to 800 nm. Refractive index was 2.33 at 633 nm. Dielectric constant and dielectric loss of the Sr_0.3Ba_0.7Nb₂O₆ thin films prepared on polycrystal Pt substrates were 600 and 0.06 at room temperature and 1 kHz, respectively. The curie temperature (T_c) of polycrystalline Sr_0.3Ba_0.7Nb₂O₆ thin films was about 200°C. At room temperature and 50 kHz, remanent polarization (P_r) and coercive field (E_c) of the polycrystalline thin films were 1.79 C/cm² and 2.69 kV/cm, respectively.     

New Sol-Gel Route for Processing of PMN Thin Films

Pyrochlore free Pb(Mg_1/3Nb_2/3)O₃ (PMN) thin films were prepared from mixed-metal precursors solutions using the sol-gel process. Lead acetate [Pb(CH₃COO)₂], magnesium acetate [Mg(CH₃COO)₂] and niobium ethoxide [Nb(C₂H₅O)₅] were used as starting materials, while 2-isopropoxy-ethanol was chosen as solvent. The reactivity of the precursors was investigated in order to understand and control the process and thus to prevent the contamination of the PMN with the pyrochlore phase. The solution was spin-coated on TiO₂/Pt/TiO₂/SiO₂/Si substrate. The thin films were characterized by SEM and XRD while dielectric measurements were performed on the bulk ceramic.     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.     

Sol-Gel Processing of Some Electroceramic Powders

This review deals with the solution-sol-gel processing (SSG) of powders such as BaTiO₃, MgTiO₃, PbTiO₃, Bi₄Ti₃O₁₂, La₂Ti₂O₇, Pb(Zr_0.52Ti_0.48)O₃, Pb(Mg_1/3Nb_2/3)O₃ and Ba(Mg_1/3Ta_2/3)O₃. Fine powders of good sinterability can be easily obtained at low temperatures although the process can be expensive and time consuming. We propose a nanocomposite route which utilizes nanophases of different components as a cost-effective alternative to sol-gel process for powder preparation.     

Dielectric properties of chemically co-precipitated tetragonal Pb(Mg1/3Nb2/3)0.65Ti0.35O3

Pyrochlore phase free Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃ ceramics have been synthesized successfully by chemical co-precipitation method. It has been noted that formation of perovskite phase Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃ without pyrochlore phase is tricky. The synthesized samples at optimized parameters were characterized using X-ray diffraction technique. Careful analysis of the XRD data predicts the tetragonal lattice structure. The morphological studies depict the presence of uniform grain size. Dielectric constant (ε′) and loss tangent (tan δ), at and well above room temperature, were studied. The variation of dielectric constant with temperature shows sharp peak at ferroelectric–paraelectric transition temperature. Further, the temperature dependent dielectric constant shows good fit with modified Curie–Weiss law, which suggests normal ferroelectric behavior of Pb(Mg_1/3Nb_2/3)_0.65Ti_0.35O₃.     

B<Subscript>2</Subscript>O<Subscript>3</Subscript> additives on sintering and microwave dielectric behaviors of Mg<Subscript>4</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics synthesized through the aqueous sol–gel Process

The relationships between the sintering temperatures and the microwave dielectric properties of (1−x)Mg₄Nb₂O₉-xB₂O₃ (x = 0.5–10 wt. %) compounds were investigated by the sol–gel method in order to reduce the sintering temperature in this study. A suitable amount of B₂O₃ doping was effective in allowing low sintering temperatures without a little detrimental effect on these dielectric properties of the Mg₄Nb₂O₉ compounds. The variations in the dielectric constant (ε _r ) and the quality factor (Q·f) of the Mg₄Nb₂O₉ compounds depended on the amount of B₂O₃ doping and the sintering temperature. As a result, a ε _r value of ~12.8 and a Q·f value of ~142,570 GHz were obtained when the Mg₄Nb₂O₉ compound with x = 3% was sintered at 1,200 °C for 4 h. The temperature coefficient of resonant frequency (τ _f ) of the 3%-B₂O₃ doping Mg₄Nb₂O₉ compound slightly changed from −33 to −48 ppm/°C with an increased sintering temperature.     

Dielectric spectroscopic analysis of polyvinyl chloride nanocomposites loaded with Fe2O3 nanocrystals

Iron oxide (α‐Fe₂O₃) nanocrystals powder was successfully synthesized via the sol‐gel method. The microstructural examination of the synthesized nanocrystals confirmed the formation of α‐Fe₂O3 (hematite) structure using X‐ray diffraction and Fourier transform infrared. The synthesized nano‐hematite powder with different weight percentage up to 5 wt% was introduced to polyvinyl chloride (PVC) to fabricate PVC/Fe₂O₃ nanocomposites using the solution‐cast technique. The dielectric spectroscopic analysis for the investigated samples has been studied at room temperature and at different temperatures up to 120°C. The real part of the permittivity (ε^′) exhibited a significant dependence on filler concentrations throughout whole temperature range. However, the dependency of both of the loss tangent (tanδ ) and AC conductivity (σ_ac) on filler concentrations is more pronounced at temperatures higher than room temperature. The obtained values of tan δ for the investigated nancomposites referred to the α‐relaxation around 70°C, which is close to glass transition temperature of the investigated PVC. The dependency of the dielectric strength on Fe₂O₃ nanofiller concentration was observed with enhancement in the dielectric strength reach to 20.5% for PVC/0.7 wt% Fe₂O₃ nanocomposite higher than the recorded value for the pristine PVC.     

Epitaxial Growth of Sr x Ba1 − x Nb2O6 Thin Films Prepared from Sol-Gel Process

In this study, we prepared Sr _x Ba_{1 – x} Nb₂O₆ (x = 0.3, 0.5 and 0.7) thin film on 0.75 wt% La doped SrTiO₃ (100) and (110) single crystal substrates. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethlene glycol monomethyl ether as solvents. The substrates were coated with the solution by spin coating method. As-coated thin films were heated from 973 to 1273 K in air. The grains of the thin film on La doped SrTiO₃ (100) were pillar shaped and arranged in right angle to each other. On the other hand, the grains of these thin films on La doped SrTiO₃ were pillar shape and arranged in one direction. The crystallographic relationship of the thin film between Sr _x Ba_{1 – x} Nb₂O₆ and substrate that the 130 and 310 direction of the thin film on the substrate were oriented with c-axis in parallel to the substrate surface. On the other hand, (hk0) phase diffractions of Sr _x Ba_{1 – x} Nb₂O₆ thin film on the substrate (110) were investigated in the XRD theta-2theta measurement. It is expected that the Sr _x Ba_{1 – x} Nb₂O₆ (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO₃ (110) single crystal substrate.     

Crystallization of textured PbTiO3 films deposited from gels

Sol-gel processed PbTiO₃ thin films have been deposited by spin coating onto different subtrates; Si[111], Si/Al, Si/SiO₂/Cr/Pt, MgO[100], SrTiO₃[100] and sapphire. Interactions between the substrate and PbTiO₃ films after heat treatment have been studied by X-ray diffraction and Rutherford Back Scattering. When deposited onto sapphire and Si[111], PbTiO₃ films exhibit a preferred orientation with (101) perpendicular to the substrate. These films become oriented along (100) onto MgO and (001) onto SrTiO₃[100] substrates. A strong channelling effect is observed by the RBS technique when the film is oriented along the c axis on SrTiO₃[100] suggesting that these films are epitaxially grown. The diffusion of metal atoms during the thermal treatment gives rise to the formation of lead silicate on Si[111] substrates. As a result a pyrochlore phase is formed. Lead titanate films on Si/SiO₂/Cr/Pt and Si/Al substrates are polycrystalline and do not exhibit any texture.     

Crystallization Temperature Limit of (Ba,Sr)TiO<Subscript>3</Subscript> Thin Films Prepared by a Non Oxocarbonate Phase Forming CSD Route

A new chemical solution deposition (CSD) route for the fabrication of Ba_0.7Sr_0.3TiO₃ (BST) thin films has been developed which completely prevents the formation of an intermediate oxo-carbonate phase. The latter has been reported previously by several authors to be responsible for increased crystallization temperatures. Barium and strontium diaminoethoxides were synthesized starting from pure barium and strontium metal and aminoethanol. These alkoxides were found to be readily soluble in a wide range of solvents and thus were excellent candidates for the CSD process. To prepare a stable precursor solution the aminoalkoxides were dissolved in 2-butoxyethanol and then used for the deposition of BST thin films. We conclude that the minimum crystallization temperature of 600C to be independent of the formation of the oxo-carbonate phase. DTA-TGA were performed on the precursors and their solutions to study their decomposition behaviour. All films annealed at different temperatures were physically characterized by XRD, IR, and SEM. The films prepared by this route at 650C were found to have high dielectric constant and the leakage currents were comparable to BST films prepared by normal carboxylate based routes at 750C.     

Magnetocapacitance and impedance spectroscopy of Ba0.7Sr0.3TiO3/La0.67Sr0.33MnO3 and Ba0.8Sr0.2TiO3/La0.67Sr0.33MnO3 thin film heterostructures

The paper discuses synthesis of Ba_0.7Sr_0.3TiO₃/La_0.67Sr_0.33MnO₃ and Ba_0.8Sr_0.2TiO₃/La_0.67Sr_0.33MnO₃ thin film heterostructures by sol–gel (citrate gel route) method. The XRD spectra are determined for confirmation of crystalline phases of Ba_0.7Sr_0.3TiO₃, Ba_0.8Sr_0.2TiO₃ and La_0.67Sr_0.33MnO₃ thin films. The observed variation of Cp, tan δ, magnetocapacitance (Mc), real part of dielectric constant ε′, imaginary part of dielectric constant ε″as a function of frequency, magnetoresistance R(H) and magnetoimpedance Z(H) are presented in the paper. Further the observed impedance spectra as a function of frequency f is also presented in the paper. The observed variation of Mc is qualitatively correlated with the stress induced effect and magnetoresistasnce effect occurring simultaneously.     

Dielectric behavior of some aromatic polyimide films

Aromatic polyimides were prepared by polycondensation reaction of two aromatic diamines, such as 4,4′-diaminodiphenylmethane (DDM) and 3,3′-dimethyl-4,4′-diaminodiphenylmethane (MDDM), with aromatic dianhydrides, such as 4,4′-isopropylidene-diphenoxy-bis(phthalic anhydride) (6HDA), benzophenonetetracarboxylic dianhydride (BTDA) and hexafluoroisopropylidene-bis (phthalic anhydride) (6FDA). These polymers are soluble in polar aprotic solvents and can be cast into thin films from such solutions. The polyimides show high thermal stability, with decomposition temperature being above 430 °C in air, and high glass transition temperature being in the range of 200–287 °C. The free standing films, having the thickness of tens of micrometers, exhibited good mechanical and electrical insulating properties. The dielectric constant, molecular mobility and AC conductivity of thin films prepared from these polymers were investigated in detailed. The study of their dielectric behavior evidenced low dielectric constant values, in the range of 2.88–3.48 at 1 Hz at room temperature, and three relaxation processes (γ,β₁ and β₂) were observed at sub-glass temperatures for polyimides based on 6HDA and 6FDA and only two (γ and β) relaxations were detected for polyimides based on BTDA. The cooperativity of the molecular motions associated with the relaxation processes was discussed.     

Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Preparation and Characterization of a Sol-Gel Prepared Ferroelectric Sandwich Structure

A novel silicon-based PbTiO₃/Pb(Zr,Ti)O₃/PbTiO₃ (PT/PZT/PT) sandwich structure has been prepared using a sol-gel method. The annealing temperature is greatly reduced compared with those structures without PT layers. Capacitance-voltage (C-V), leakage current-voltage (I-V), polarization-field (P-E), dielectric-frequency response and polarization fatigue of the sandwich structure are examined. The relative dielectric constant, the coercive field and the remanent polarization of the PZT films are measured to be about 900, 18 kV/cm and 16 C/cm² respectively. The current density is less than 5 × 10^–9 A/cm² below 200 kV/cm. The dielectric constant of the structure remains constant at low frequency, and decreases to some degree at high frequency. The retained polarization does not change significantly after 8 × 10⁹ read/write cycles. The PZT films are proved to have very good dielectric and ferroelectric properties. The new PT/PZT/PT sandwich structure can be valuable for memory devices and other applications.     

Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

Third-Order Nonlinear Optical Properties and Dielectric Properties of Pb-Complex Perovskite Thin Films Prepared by Sol-Gel Method

The third-order nonlinear optical properties of the sol-gel derived Pb(Fe_1/2Nb_1/2)O₃-PbTiO₃ (PFN-PT) thin films have been investigated by the THG method. The χ⁽³⁾ values of PFN-PT thin films increased from 3.2×10⁻¹² esu (PT) to 8.5×10⁻¹² esu (PFN) with increasing content of Fe³⁺ ions which possessed very high second-hyperpolarizability, ψ(Fe_2/3O). It was experimentally confirmed that complex oxides such as ABO₃-type perovskites consisting of large non-transition metal A-site cations and small transition metal B-site cations exhibited high χ⁽³⁾ as expected from Lines' model. It was also found that the χ⁽³⁾ values of complex oxides could be estimated from the second-hyperpolarizabilities of the constituent single oxides reported so far. Because of the large remanent polarization, PT thin films may exhibit the highest χ⁽³⁾ among the ferroelectric PFN-PT thin films studied in the present work. The maximum dielectric constant, ε, of 1990 at room temperature was obtained for 0.5PFN·0.5PT thin films, whose composition corresponds to so-called morphotropic phase boundary (MPB).