SPICE Compatible Analytical Electron Mobility Model for Biaxial Strained-Si-MOSFETs

This paper describes an analytical model for the bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scatterings are included to analyze the full mobility model. Analytical explicit calculations of all the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with the numerically reported results and show good agreement.     

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

We have developed a 2D analytical model for the single gate Al In Sb/In Sb HEMT device by solving the Poisson equation using the parabolic approximation method.The developed model analyses the device performance by calculating the parameters such as surface potential,electric field distribution and drain current.The high mobility of the Al In Sb/In Sb quantum makes this HEMT ideal for high frequency,high power applications.The working of the single gate Al In Sb/In Sb HEMT device is studied by considering the variation of gate source voltage,drain source voltage,and channel length under the gate region and temperature.The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions.The results from the analytical model are compared with that of numerical simulations(TCAD) and a good agreement between them is achieved.     

Nanoscale strained-Si MOSFET physics and modeling approaches: a review

In this paper, an attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied in this paper that consider the effect of strain on the devices and their comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits and there is a strong need of an analytical model which describes the complete physics of the strain technology.     

Nanoscale strained-Si MOSFET physics and modeling approaches: a review

An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.     

An analytical model for high electron mobility transistors

In this paper we present a new model for HEMT's which is based on a single analytical function that describes the electron concentrations in the two dimensional electron gas and in the AlGaAs layer. Besides accounting for the AlGaAs conduction, the model includes the effect of mobility degradation, channel length modulation in the saturation region and the series resistances R_S and R_D. The model results in closed form expressions for the current, transconductance, output conductance and gate capacitance. Finally, the theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions     

A universal electron mobility model of strained Si MOSFETs based on variational wave functions

A new model is proposed to describe the electron mobility enhancement in strained Si MOSFETs inversion layers using the variational wave functions in the triangular potential approximation. Phonon scattering and surface roughness scattering are included in this model and electron mobility enhancements due to the suppression of these two scatterings are accounted for, respectively. A process-dependent interface parameter is introduced to fit with various technologies. Results from the model show good agreement with experiments for different Ge mole fractions and for a wide range of vertical effective field and temperature. The model is very interesting for implementation in conventional device simulators.     

A SPICE compatible subcircuit model for lateral bipolar transistorsin a CMOS process

This paper describes a SPICE compatible subcircuit model of a lateral pnp transistor, which was fabricated in a 0.6 μm CMOS process. The extraction of a dc parameter set for the lateral device is more complicated than for a vertical device because of the presence of two parasitic vertical bipolar transistors which are formed by the emitter/collector, the base and the substrate regions. The SPICE Gummel-Poon model does not predict the substrate current accurately. This paper proposes a method which involves the use of a subcircuit incorporating three SPICE Gummel-Poon models [representing one lateral and two parasitic vertical bipolar junction transistors (BJT's)]. The development of this model, its implementation and the results obtained are outlined and discussed. This circuit model is SPICE compatible and can thus be used in commercial simulators. The model provides good agreement over a wide range of measured dc data including substrate current prediction     

基于解析电导率模型的相变存储器SPICE模型

在相变存储器的外围电路设计中,相变存储单元的电路模型是连接器件与电路的桥梁。在本文中,提出了一种基于解析电导率模型的相变存储器电路模型,与前面的工作相比,该模型利用解析电导率模型代替了使用传统模型中需要利用测试结果建模的缺点,可以通过材料的参数计算相变存储单元的电阻,能够反映相变材料中的载流子传输特性。同时,基于等温假设,提出了解析温度模型,并基于JMA方程建立的相变动力学模型,结果表明,该模型能够进行相变存储单元瞬态与稳态电路仿真,并与测试结果符合较好。     

Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex

Measured in-plane hole drift and Hall mobilities in heavily boron-doped strained Si_1−xGe_x layers are reported. In the range of boron dopings examined (1.5–2.1 × 10¹⁹ cm⁻³), the drift mobility is seen to increase with increasing germanium fraction. The Hall mobility decreases with increasing germanium fraction. Presented at the 1992 EMC, Boston.     

A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface

Besides its favorable physical properties, high performant MOSFETs (metal-oxide-semiconductor field-effect transistors) fabrication in silicon carbide (SiC) remains an open issue due to their low channel mobility values. The effect of charge trapping and the scattering at interface states have been invoked as the main reasons for mobility reduction in SiC thermal oxidized MOS gated devices. In this paper, we propose a compact electron mobility model based on the well-established Lombardi mobility model to reproduce the mobility degradation commonly observed in these SiC devices. Using 2D electrical simulations along with the proposed model and taking into account interface traps Coulomb scattering, the experimental field-effect mobility of 4H-SiC MOSFET devices has been fitted with a good agreement.     

An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor

An analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET has been developed. This model uses a Trofimenkoff-type relation [1] for the electron velocity and electrical field and assumes that the electron velocity saturation inside the two-dimensional electron gas channel cause current saturation. It also takes into account the parasitic conduction in the AlGaAs layer by including a MESFET operation. Based on this model, analytical current-voltage equations suitable for computer simulation have been derived. Calculated results for sub-half-micrometer HEMT's show excellent agreement with measured characteristics.     

CGAM: A community and geography aware mobility model

The advances of localization‐enabled technologies have led to huge volumes of large‐scale human mobility data collected from Call Data Records (CDR), Global Positioning System (GPS) tracking systems, and Location Based Social networks (LBSN). These location data that encompass mobility patterns could generate an important value for building accurate and realistic mobility models and hence important value for fields of application including context‐aware advertising, city‐wide sensing applications, urban planning, and more. In this paper, we investigate the underlying spatio‐temporal and structural properties for human mobility patterns, and propose the Community and Geography Aware Mobility (CGAM) model, which characterizes user mobility knowledge through several properties such as home location distribution, community members' distribution, and radius of gyration. We validate the CGAM synthetic traces against real‐world GPS traces and against the traces generated by the baseline mobility model SMOOTH and assess that CGAM is accurate in predicting the performance of flooding‐based and community‐based routing protocols.     

一种低轨卫星动态模型

分析了地球自转给低轨卫星动态模型带来的影响;针对大多数文献在低轨卫星动态模型中都未考虑地球自转的不足,提出了一种将地球自转考虑在内的低轨卫星动态模型,并在此模型的基础上对地面用户越区切换进行了分析;最后对模型进行了仿真分析,对于在低轨卫星动态模型中考虑地球自转的重要性做出了说明。     

GeOI pMOSFETs空穴迁移率的物理模型

A physical model of hole mobility for germanium-on-insulator p MOSFETs is built by analyzing all kinds of scattering mechanisms, and a good agreement of the simulated results with the experimental data is achieved, confirming the validity of this model. The scattering mechanisms involved in this model include acoustic phonon scattering, ionized impurity scattering, surface roughness scattering, coulomb scattering and the scattering caused by Ge film thickness fluctuation. The simulated results show that the coulomb scattering from the interface charges is responsible for the hole mobility degradation in the low-field regime and the surface roughness scattering limits the hole mobility in the high-field regime. In addition, the effects of some factors, e.g. temperature, doping concentration of the channel and the thickness of Ge film, on degradation of the mobility are also discussed using the model, thus obtaining a reasonable range of the relevant parameters.     

A microwave model for high electron mobility transistors

In this paper, the authors present a high-frequency model for the high electron mobility transistor (HEMT). The model includes the distributed effects in the channel of the device through two newly developed wave equations in the linear and saturation regimes. The equations are solved taking into account the electric fields along and perpendicular to the flow of the current. The Y and S parameters are derived and the theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of frequencies     

A noise model for high electron mobility transistors

A model to explain the noise properties for AlGaAs/GaAs HEMT's, AlGaAs/InGaAs/GaAs pseudomorphic HEMT's (P-HEMT's) and GaAs/AlGaAs inverted HEMT's (I-HEMT's) is presented. The model Is based on a self-consistent solution of Schrodinger and Poisson's equations. The influence of the drain-source current, frequency and device parameters on the minimum noise figure F_min and minimum noise temperature T_min, for different HEMT structures are presented. The study shows that P-HEMT's have a better noise performance than the normal and inverted HEMT's. The present model predicts that a long gate P-HEMT device will exhibit a better noise performance than a conventional HEMT. There is a range of doped epilayer thickness where minimum noise figure is a minimum for pseudomorphic HEMT's which is not observed in conventional and inverted HEMT's. The calculated noise properties are compared with experimental data and the results show excellent agreement for all devices     

Averaged hole mobility model of biaxially strained Si

We aim to establish a model of the averaged hole mobility of strained Si grown on（001）,（101）,and （111） relaxed Si_1-xGe_x substrates.The results obtained from our calculation show that their hole mobility values corresponding to strained Si（001）,（101） and（111） increase by at most about three,two and one times,respectively, in comparison with the unstrained Si.The results can provide a valuable reference to the understanding and design of strained Si-based device physics.     

Unified SPICE compatible model for large and small-signal envelope simulation of linear circuits excited by modulated signals

The envelope-simulation method, developed earlier for large-signal simulation [time domain (TRAN)] is extended to include small-signal envelope simulation (ac) and dc sweep simulation (steady state for a range of carrier frequencies). The model is derived for amplitude modulation (AM), frequency modulation (FM), and phase modulation (PM) modulation schemes and is demonstrated on a piezoelectric transformer circuit. The model is based on the equivalent circuit approach and can be run on any modern electronic circuit simulator. An excellent agreement was found between the simulation results according to the new unified envelope model, full simulation, and experimental results.     

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

Since it is naturally normally-off, the hybrid AlGaN/GaN MOS-HEMT has a tremendous potential for an advanced GaN-based power switch. An analytical model for the hybrid AlGaN/GaN HEMT on-resistance is presented in this paper. The methodology presented here can aid the designers to understand the physics and to electrically characterize the new generation of GaN based devices. The models proposed here can also easily be implemented in TCAD simulation packages where models for GaN devices are not mature.     

非对称异质双栅应变硅MOSFETs 二维模型研究

基于对二维泊松方程的精确求解,本文对全耗尽型非对称异质双栅应变硅MOSFET的二维表面势,表面电场,阈值电压进行了研究。模型结果和二维数值模拟器的结果很吻合。此外并对该器件的物理作了深入的研究。该模型对设计全耗尽型非对称异质双栅应变硅MOSFET器件有着重要的指导作用.