Impurity induced structural phase transformations in melt grown single crystals of lead iodide

Lead iodide is a wide‐band gap and highly resistive semiconductor considered to be a promising room temperature nuclear detector. The phenomenon of polytypism is posing interesting problems of phase transformations among its polytypic modifications and formation of polytypic admixture during growth due to native impurities. Transformations have also been observed even when the material is stored for few months that causes deterioration in functioning of the PbI₂ devices. Lead iodide has been purified and single crystals were grown using zone‐refining system. The observed phase transformations during growth and storage have been explained in the light of distortion of [PbI₆]^4‐ octahedron due to impurities present in the material and the known crystal structures of PbI₂. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of influential factors on the purification of zone‐refined germanium ingot

Zone refining is one of the most important procedures to purify germanium crystals for the fabrication of detectors in our laboratory. In order to properly zone refine high‐purity germanium crystals, it is important to develop perfect cleaning procedures for raw materials, quartz tubes, and the containers holding raw materials. Additionally, vacuum levels, container types, the correct combination of ambient gases, the speed of zone travel, and the ratio of ingot length to molten zone length, all need to be carefully studied in order to obtain the best results possible. In this work, we investigate a number of influential factors in perfecting high‐purity germanium crystal growth, specifically: cleaning procedures, boat composition, vacuum levels in the chamber, zone travel speed, and the ratio of ingot length to molten zone length. Using the van der Pauw Hall technique, we were able to measure the electrical properties of zone‐refined ingots and analyze the origin and distribution of three main impurity elements (boron, aluminum and phosphorus) thereby allowing us to study potential contamination sources. After detailed analysis on the various influential factors, we were able to optimize the zone‐refining procedures.     

Growth and Optical Characterization of CdI2 Single Crystals

Single crystals of CdI₂ were grown by employing the horizontal zone refining method. Emission spectra of these crystals were recorded at room temperature and liquid nitrogen temperature. Various emission parameters such as optical gain coefficient, lifetime, gain, stimulated emission cross section were evaluated for the various emission components. The results show high gain at low temperature whereas very low value at rmm temperature. This has been explained by invoking the existence of self trapped excitons in the crystal.     

Resonance excitation of polaritons by bulk electromagnetic waves in the layered systems with anisotropic substrates

The possible resonance excitation of surface electromagnetic waves by the bulk waves at the interface between a positive transparent uniaxial crystal and an isotropic medium has been predicted. The existence of the surface waves is provided by anisotropy of one of the boundary media. The tensor relation between the vector amplitudes of an exciting bulk electromagnetic wave and the excited surface wave is established. The ratio of the moduli of the tangential components of these amplitudes is analyzed as a function of the angle of incidence and the polarization of the bulk wave. The numerical calculations are performed for the surface waves at the interface between paratellurite TeO₂ and a KRS-6 (TlBr 30%-TlCl 70%) crystal.     

Growth and characterization of magneto‐optical YFeO3 crystals

The floating zone growth of magneto‐optical crystal YFeO₃ has been investigated. The polycrystalline feed rod was prepared by a pressure of 250MPa and sintering at about 1500°C. A crack‐ free YFeO₃ single crystal has been successfully grown. The crystal preferred to crystallize along <100> direction with about 10° deviation. The X‐ray rocking curve of the crystal has a FWHM of 24 arcsec, confirming the high crystal quality of the sample. The (100) plane was etched by hot phosphoric acid and the dislocation density was about 10⁴/cm². A thin outer layer with Y₂O₃‐rich composition was found at the periphery of as‐grown crystals, which was attributed to the Fe₂O₃ evaporation during growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of ferroelectric‐ferroelastic Tb2(MoO4)3 crystals

Transparent and nearly colorless ferroelectric‐ferroelastic β′‐Tb₂(MoO₄)₃ (TMO) single crystals have been grown by the Czochralski (CZ) method. The single crystal structure was investigated by X‐ray powder diffraction and was shown to be a single phase with the structure similar as the β′‐Gd₂(MoO₄)₃ crystal. The optical transparency of the TMO crystal has been measured and the crystal is almost transparent in the visible and near infrared regions. The defects of TMO crystal were evaluated by etching technique and the ferroelectric domain structures were observed by an optical microscope. A high‐resolution X‐ray diffraction analysis demonstrates that the as‐grown TMO crystal possesses relatively high optical quality. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on the structural,thermal and optical behaviour of solution grown organic NLO material: 8‐hydroxyquinoline

Single crystal of 8‐hydroxyquinoline (8HQ) having chemical formula C₉H₇NO, an organic nonlinear optical (NLO) material has been successfully grown by slow evaporation solution growth technique at room temperature. The crystal system has been confirmed from the powder X‐ray diffraction (PXRD) analysis. The crystalline perfection was evaluated by high resolution X‐ray diffractometry (HRXRD). From this analysis we found that the quality of the crystal is quite good. However, a very low angle (tilt angle 14 arc sec) boundary was observed which might be due to entrapping of solvent molecules in the crystal during growth. Its optical behavior has been examined by UV‐Vis. analysis, which shows the absence of absorbance between the wavelengths ranging from 400 to 1200 nm. From the thermal analysis it was observed that the material exhibits single sharp weight loss starting at 113°C without any degradation. The laser damage threshold was measured at single shot mode and the SHG behavior has been tested using Nd:YAG laser as a source. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optimization of thermal conditions during crystal growth in a multi‐zone resistance furnace

The thermal condition is one the of most important control parameters for crystal growth. In this paper we present an effective numerical method in detail for optimizing thermal conditions in multi‐zone crystal growth facilities, especially for crystal growth by the float zone (FZ) technique. A furnace function Ω is introduced to integrate the character of a growth furnace into a linear equation system. The desired power distribution can be therefore approached by solving the linear equation system iteratively. An expert systemlike algorithm has been developed in order to obtain a more suitable solution for practical applications. This method was used to investigate thermal parameters for experiments of SiGe/GeSi single crystal growth by the FZ technique. It is an individual program which can be combined with any commercial finite element/finite volume (FE/FV) program such as FIDAP^TM.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

High quality single crystals of ternary AgGaS₂ (AGS) semiconductor with chalcopyrite structure have been grown by chemical vapor transport (CVT) technique using iodine as a transporting agent at different growth zone temperatures. The powder X‐ray diffraction and single crystal X‐ray diffraction studies indicate that the as‐grown AGS crystals belong to the tetragonal (chalcopyrite) system with (112) plane as the dominant peak. The full width at half maximum (FWHM) of the X‐ray rocking curve for the as‐grown AGS single crystal is 5 arcsec. The energy dispersive X‐ray analysis (EDAX) and optical transmission spectra of as‐grown AGS single crystals grown at different conditions show the almost same composition and band gap (2.65 eV). Photoluminescence (PL) spectra of as‐grown AGS single crystals show prominent band edge emission at 2.61 eV. The resistivity of the as‐grown AGS single crystal has been measured. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐quality LaCoO3 single crystal grown by optical floating zone method and its electromagnetic properties

A LaCoO₃ single crystal with 4 mm in diameter and 30 mm in length has been grown by optical floating zone method. The as‐grown crystal is highly crystalline with the rhombohedral perovskite structure (R3c) and grows parallel to the (121) direction. The room temperature resistivity of the as‐grown crystal is 0.12 Ω·cm and the insulator‐metal transition occurs around 500 K. The coercivity and the remanence of the as‐grown crystal are 5 Oe and 6.61×10^–5 μ_B/f.u. at 5 K, respectively. In 1000 Oe under zero‐field cooling, the magnetic susceptibility of the as‐grown crystal shows an upturn in a Curie tail fashion below 35 K, and appears a wave crest over the interval 55 K≤T≤90 K. In addition, a slope change of 1/χ(T) at about 12 K is observed in 50000 Oe under zero‐field cooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fabrication and optical properties of two‐dimensional photonic crystal of ZnO pillars

Two‐dimensional (2D) photonic crystal of ZnO pillars was synthesized on silicon substrate by the combination of template method and vapor‐phase transport method. The microstructure and morphology of the ZnO photonic crystal was evaluated by using scanning electron microscope (SEM) and X‐ray diffraction (XRD). Large‐area specular reflectance measurements showed the presence of photonic stop band. The effect of the photonic band gap and the special structure on the photoluminescence (PL) properties of ZnO photonic crystal has been investigated. Both suppression and enhancement in the PL were observed. Raman scattering analyses demonstrated that the defect of ZnO photonic crystal exists in this experiment. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A novel way of modifying the thermal gradient in Vertical Bridgman‐Stockbarger Technique and studies on its effect on the growth of benzophenone single crystals

In order to grow benzophenone single crystal, an organic nonlinear optical material, a cost‐effective Vertical Bridgman‐Stockbarger system has been designed and fabricated by employing a two‐zone, transparent furnace made out of immiscible liquids. Transparent, optical quality benzophenone single crystals were successfully grown as a result of a suitable thermal gradient achieved by means of introducing an intermediate liquid in between the two immiscible liquids. The effect of change in the volume of the intermediate liquid thereby the thermal gradient on the growth parameters was analyzed. The quality of the grown single crystal was justified using X‐ray powder diffraction analysis, FTIR, TG‐DTA and optical transmission studies. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of a Czochralski grown silicon crystal doped with 1020 cm‐3 germanium

A dislocation‐free silicon single crystal doped with 10²⁰ cm^‐3 germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in the seed‐end and tang‐end of the crystal was 8×10¹⁹cm^‐3and 1.6×10²⁰ cm^‐3, respectively. The effective segregation coefficient of Ge, the distribution of flow pattern defects (FPDs) and the wafer warpage have been characterized. Both the effective segregation coefficient and the equilibrium segregation coefficient of Ge in silicon were evaluated. Then, the density of FPDs was traced from seed‐end to tang‐end of the ingot, a suppression of FPDs by Ge doping was shown. That is probably because the Ge atoms consume free vacancies and thus a higher density of smaller voids is formed. Furthermore, the mechanical strength of wafers has also been characterized by batch warpage analysis. The warpage in the seed‐end was larger than that in the tang‐end of the ingot, showing that the mechanical strength of wafers is enhanced by Ge doping. Such improvement is interpreted by an enhanced dislocation pinning effect associated with the enhanced nucleation of grown‐in oxygen precipitates in the Ge‐doped silicon wafers. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Floating zone growth and characterization of ruby single crystals

Large, high optical quality single crystals of ruby have been grown successfully by the floating zone method under air atmosphere. The size of the grown crystal is typically 60‐70 mm in length and 7‐8 mm in diameter. The obtained crystals were red and did not have any macroscopic defects such as cracks and inclusions. Grown crystals were characterized by powder X‐ray diffraction (XRD) methods, polarized optical microscopy, scanning electron microscopy (SEM). The absorption and fluorescence spectra were measured at room temperature and the dielectric constant measurements of ruby crystals were also presented. Defects occurring in single crystals of ruby during crystal growth by floating zone method are described, and their correlation with the growth parameters is discussed. The origin and control of these defects in grown crystals were studied and the optimum method was proposed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Vibrational,optical and microhardness studies of trimethoprim DL ‐malate

Trimethoprim malate, an organic crystal, has been synthesized using slow evaporation method from its aqueous solution. Structural, optical and the mechanical properties of the grown crystal have been investigated by various characterization techniques which include FTIR spectra, single crystal XRD, UV‐Vis spectra and Vickers microhardness testing. The structure of the compound predicted by analysing the recorded FTIR spectrum compliments the structure determined using single crystal X‐ray diffraction. Single crystal X‐ray diffraction study reveals that the crystals are monoclinic [P2₁/c, a=12.9850 Å, b=9.3038 Å, c=15.6815 Å and β=111.065°]. The UV‐Vis spectrum exhibits maximum transparency (98%) for a wide range suggesting the suitability of the title compound for optical applications. The optical constants have been calculated and illustrated graphically. Microhardness tests have been performed on the cystal under study and the Vicker hardness number has been calculated. The work hardening coefficient is found to be 2.85 which suggest that the crystal belongs to the family of soft materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystallization and Characterization of Orthorhombic β‐MgSO4 · 7H2O

In solution, the growth rate and the crystal habit are influenced by a number of factors such as supersaturation, temperature, pH of the solution, cooling rate, agitation, viscosity, initial state of the seed crystal and the presence of impurities. The crystallization of orthorhombic β‐MgSO₄ · 7H₂O, from low temperature aqueous solution by slow cooling process was studied. The metastable zone width, the induction periods (τ) for different supersaturations and the effect of pH on the growth rate of the crystals were investigated. The increase of pH yielded bigger crystals. The structural, optical, thermal and mechanical properties of β‐MgSO₄ · 7H₂O have been studied using FT‐IR, X‐ray diffraction, TGA‐DTG and micro hardness analyses.     

Crystal Growth of High‐melting Multi‐component Rare Earth‐Transition Metal Intermetallic Compounds from the Melt

The crystal growth of different classes of high melting multi‐component Rare Earth‐Transition Metal‐Compounds by vertical floating zone melting with inductive heating has been investigated. Phase diagram features of the multi‐component systems relevant for the crystallization process have been revealed. The critical zone travelling rate for RENi₂B₂C crystal growth is one order of magnitude smaller than for RE₂TMSi₃ compounds. This is attributed to different solidification modes of both classes of compounds, peritectic and congruent melting, respectively. The crystal perfection, element segregation and selected properties of the bulk crystals such as critical temperature of superconductivity were studied as function of the axis co‐ordinate. In the case of RE₂TMSi₂ plate‐like RESi or RESi₂ precipitates were detected in the single crystalline matrix. They were partially dissolved by annealing and subsequent quenching. The anisotropy of various superconducting and magnetic properties was determined at YNi₂B₂C and TbNi₂B₂C single crystalline specimens.     

Growth and high frequency dielectric study of pure and thiourea doped KDP crystals

Non linear optical (NLO) materials have acquired new significance with the advent of a large number of devices utilizing solid‐state laser sources. Several NLO materials have been used for this kind of technological applications. The Potassium di‐hydrogen phosphate (KDP) one of NLO material having superior non linear optical properties has been exploited for variety of applications. In the present investigation we have grown KDP crystals from aqous solution with thiourea, an organic non linear optical material. We could enhance the SHG efficiency of thiourea doped KDP crystal. It was 1.99 times more that of pure KDP. We observed more enhancements in nonlinearity for low concentration of thiourea.The crystal structure and cell parameters of grown crystal were determined from Powder XRD.The incorporation of thiourea in the grown crystals was qualitatively analyzed from FT‐IR study. The absorption spectra of pure and thiourea doped KDP crystal reveal that thiourea doped KDP crystals would be a better nonlinear optical (NLO) material for second harmonic generation (SHG) than pure KDP. The thermal decomposition and weight loss of pure and thiourea doped KDP crystal was observed by thermogravimetric (TGA) analysis and Differential Scanning Calorimetry (DSC). The high frequency dielectric study of pure KDP crystal, thiourea doped KDP crystals and organic additive thiourea was carried out using X‐band at frequency 8GHZ and 12GHZ by transmission line wave guide method. We observed low dielectric constant of thiourea doped KDP crystal when it is doped with 2mole% of thiourea. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Rapid growth of KDP crystal from aqueous solutions with additives and its optical studies

Potassium Chloride (KCl) and Ethylene diamine tetraacetie acid (EDTA) as new additives were added into the KDP solutions in a small amount (5M% and 0.01M% respectively). The solubility curve and metastable zone width of KDP solution with 5M%KCl was determined and we explained the mechanism of rapid growth of KDP crystal with KCl additve. The clear transparent crystal of KDP with a dimension of 54 × 54 × 42 mm have been grown rapidly by cooling solution method in 2 days. The crystal grown from additives added solution was subjected to optical transmission and laser damage threshold studies as compared with the crystal grown by traditional growing method. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)