High-resolution photoluminescence studies of (211) CdTe grown on (211)B GaAs substrate

Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A⁰X) and donors (D⁰X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.     

CdZnTe(211)面纳米力学特性分析

采用研磨-机械抛光-化学机械抛光工艺对CdZnTe(211)面进行加工,当表面粗糙度Ra达到0.94 nm时,采用纳米压痕仪对CdZnTe(211)面进行纳米力学性能测量,试验结果表明:弹性模量和硬度随着压力的增大而减小,存在明显的尺寸效应.当针尖离开晶体表面时,黏附现象特别明显.在不同晶向上,弹性模量和硬度存在显著的各向异性.     

Epitaxial Sn1‐xPbxS nanorods on iso‐compositional thin films

Based on SnS (Herzenbergite) – SnPbS₂ (Teallite) mixed crystals with orthorhombic layer structures, thin films and lawns of Sn_1‐xPb_xS nanorods were produced using hot wall vacuum deposition method (HWVD). The lawn was formed onto the surface of an underlying thin Sn_1‐xPb_xS film which is build by differently oriented blocks. The density of rods arranged like a lawn depends on the metal ratio and substrate temperature. X‐ray and TEM analysis of the epitaxial material showed preferential (001) orientation perpendicular to the surface of the glass substrate. The roughness of the films measured by atomic force microscopy was in the range of R_q = 49.5–86.3 nm depending on lead concentration The rods were about 500 nm high and 300 nm in diameter. As revealed by TEM‐EDX experiments the droplet at the tip of rods consists of tin. Therefore it is assumed the rods grew via a self‐consuming vapor–liquid–solid (VLS) mechanism. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

pH‐Controlled topologies of two Co(II) complexes based on 5‐Nitro‐1,2,3‐benzenetricarboxylic acid and 1,6‐Bis(1,2,4‐triazole‐1‐yl)hexane

Two new Co(II) coordination polymers, [Co(Hnbta)(bth)]_n ( 1 ) and {[Co₃(nbta)₂(bth)₃(H₂O)]·H₂O}_n ( 2 ), (H₃nbta = 5‐nitro‐1,2,3‐benzenetricarboxylic acid and bth = 1,6‐bis(1,2,4‐triazole‐1‐yl)hexane), have been synthesized under different pH values through hydrothermal reactions. Both complexes were characterized by elemental analysis, IR spectra, thermogravimetric analysis (TGA), and single‐crystal X‐ray crystallography. Complex 1 exhibits a 3D polythreaded network based on 4‐connected sql 2D layer. Complex 2 has a (4,4,5)‐connected trinodal 3D pillar‐layered network with a (4²·6⁴)₂(4²·6⁷·8)₂(6⁴·8²) topology. Magnetic susceptibility measurements indicate that complexes 1 and 2 show weak antiferromagnetic interactions between the adjacent Co(II) ions.     

Crystal structure of 3‐(3‐nitrophenylhydrazonocarbonyl)‐(1H)‐1,2,4‐triazole

The title compound, C₁₀H₈N₆O₃, was synthesized by the reaction of 3‐(1H)‐1,2,4‐triazole hydrazine with 3‐nitrobenzaldehyde in ethanol. The single crystal structure has been determined by X‐ray analysis. The crystal belongs to monoclinic system, space group p2₁/c with cell constant, a = 8.0214(17) Å, b = 17.334(4) Å, c = 8.9070(18) Å, V= 1179.4(4) ų. An intramolecular N—H...O and N—H…N hydrogen bond are observed between the ‐NH group with O atom of the carbonyl group and the ‐NH group with N atom. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and photoconductive properties of electron beam evaporated CdSxSe1‐x films

CdS_xSe_1‐x films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The root‐mean‐roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ωcm^‐1 to 480 Ωcm^‐1 as the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Oxygen-pressure dependence of the crystallinity of MgO films grown on Si(1 0 0) by PLD

Effects of the oxygen partial pressure on pulsed-laser deposition of MgO buffer layers on silicon substrates were investigated. The overall growth process was monitored in situ by reflection high-energy electron diffraction (RHEED) method. It was found that the crystallinity and surface morphology of the MgO films were strongly affected by oxygen partial pressure in the deposition chamber. The oxygen-pressure dependence could be explained in terms of interactions of oxygen with species in the plume-like plasma. The MgO film obtained at an optimal oxygen-pressure range of 1×10⁻²–1 Pa exhibited an atomic-smooth and defect-free surface (the root-mean-square roughness being as low as 0.82 nm). For the metal–insulator–metal (MIM) structure of Au/MgO (150 nm)/TiN prepared at the optimal growth conditions achieved a very low leak current density of 10⁻⁷ A cm⁻² at an electric field of 8×10⁵ V cm⁻¹ and the permittivity (ε_r) of about 10.6, virtually the same as that of the bulk MgO single crystals.     

Triple axis diffractometric investigations of the microstructure of thin AlxGa1‐xN epitaxial films

Al_xGa_1‐xN/GaN (Si doped or undoped) with the Al content in the composition range of 0.046 ≤ x ≤ 0.164 grown on the c sapphire face by atmospheric pressure MOCVD method were studied by high resolution x‐ray diffraction including symmetrical and asymmetrical ω/2θ scans and reciprocal space maps. A high sensitivity to small inhomogeneities of the layer thickness and lattice mismatch between AlGaN and GaN is reported, recognised as changes in the interference pattern of the diffraction peak observed across the sample. They are very well correlated with optical properties derived from independent photoreflectivity measurements. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal and molecular structure of 1‐allyl‐5‐(4‐methylbenzoyl)‐4‐(4‐methylphenyl)pyrimidine‐2(1H)‐thione

The crystal structure of 1‐allyl‐5‐(4‐methylbenzoyl)‐4‐(4‐methylphenyl)pyrimidine‐2(1H)‐thione (C₂₂H₂₀N₂OS) has been determined from three dimensional single crystal X‐ray diffraction data. The title compound crystallizes in the monoclinic space group P 2₁/c, with a = 10.6674(13), b = 10.1077(7), c = 17.9467(19) Å, β = 98.460(9)°, V = 1914.0(3) ų, D_calc = 1.251 g cm^–3, Z = 4. In the title compound, the allyl group shows positional disorder. Molecules are linked by C‐H···O, C‐H···N and C‐H···S intermolecular interactions forming two‐dimensional network. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and morphological stability of (Lu1–xEux)2O3 thin films

(Lu_1–xEu_x)₂O₃ smooth, crack‐free, transparent films were prepared by the Pechini sol–gel method and a spin‐coating technique. Thermogravimetric analysis, differential thermal analysis and FITR spectroscopy were used to study the chemical processes during annealing of the films. Film structure, morphology and optical properties were investigated. X‐ray diffraction (XRD) analysis reveals the cubic phase of (Lu_1–xEu_x)₂O₃ films annealed in the 600–1000 °C temperature range. Smooth and crack‐free films with thicknesses of 250–1000 nm were obtained in the 600–800 °C temperature range. The thickness upper limit (1000 nm) of morphological stability of films (Lu_1–xEu_x)₂O₃ on sapphire substrates has been studied.     

Surface and interfacial structure of epitaxial SrTiO3 thin films on (0 0 1) Si grown by molecular beam epitaxy

Effects of relaxation of interfacial misfit strain and non-stoichiometry on surface morphology and surface and interfacial structures of epitaxial SrTiO₃ (STO) thin films on (0 0 1) Si during initial growth by molecular beam epitaxy (MBE) were investigated. In situ reflection high-energy electron diffraction (RHEED) in combination with X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectrometry (XPS) and transmission electron microscopy (TEM) techniques were employed. Relaxation of the interfacial misfit strain between STO and Si as measured by in situ RHEED indicates initial growth is not pseudomorphic, and the interfacial misfit strain is relaxed during and immediately after the first monolayer (ML) deposition. The interfacial strain up to 15 ML results from thermal mismatch strain rather than lattice mismatch strain. Stoichiometry of STO affects not only surface morphology but interfacial structure. We have identified a nanoscale Sr₄Ti₃O₁₀ second phase at the STO/Si interface in a Sr-rich film.     

Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1)

The high dislocation density (2×10⁷/cm² for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×10⁶/cm² was achieved by optimizing the growth conditions and annealing the samples in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements.     

Effects of CdCl2 treatment on properties of CdTe thin films grown by evaporation at low substrate temperatures

The structural, morphological and optical properties of vacuum‐evaporated CdTe thin films were investigated as a function of substrate temperature and post‐deposition annealing without and with CdCl₂/treatment at 400°C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl₂/annealing treatment. The microstructure observed for all films following the CdCl₂/annealing treatment are granular, regardless of the as‐deposited microstructure. The grain sizes are increased after the CdCl₂/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, E_g, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl₂/treatment at 400°C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly for the CdCl₂/treated was observed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Numerical modeling and investigation of liquid phase epitaxy of Hg1–xCdxTe infrared detectors

Numerical investigations have been performed for modeling the global temperature field of an industrial liquid phase epitaxy (LPE) facility and to estimate the temperature fluctuations in a Te‐rich solution during the LPE growth. The numerical results agreed well with experimental data and therefore provide reliable reference points for experimenters for further improvements of the growth conditions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural characterization of CdTe layers grown on (0 0 0 1) sapphire by MOCVD

Crystalline ZnO nanoparticles were synthesized on Si substrates with or without a Au catalyst by a chemical vapor deposition (CVD) method using ZnS as the source material. The average sizes are in the range of 40–200 nm and the densities of 10⁴–10¹⁰ cm⁻². In the absence of an Au catalyst, the average nanoparticle size firstly decreases and then increases with increasing substrate temperature while the nanoparticle density decreases as the substrate temperature increases. In the presence of an Au catalyst, ZnO nanoparticles only grow when the substrate temperature is higher than 300°C and the higher the substrate temperature the denser the nanoparticles are deposited. The density of the ZnO nanoparticles grown on a Si (1 1 1) substrate is higher than that on a Si (1 0 0) substrate with or without Au catalyst.     

Variable‐range hopping dc conduction in dysprosium oxide films grown on Si substrates

Thin dysprosium oxide films were prepared on p‐Si substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X‐ray diffraction. The dc electrical transport properties of the devices were studied in the temperature range (293‐400 K). The current‐temperature characteristics was analysed according to Mott's variable‐range hopping mechanism. The mechanism's parameters were calculated and compared with the results obtained by X‐ray diffraction. It was established that as the average grain size of air‐annealed films increases, the disorder degree parameter T₀ decreases and the density of states at Fermi level increases, which leads to decrease the average hopping distance. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure of 2‐(3‐amino‐2,4,4‐tricyano‐buta‐1,3‐dienyl)‐ thiophene

The title compound (C₁₁H₆N₄S) crystallizes in the orthorhombic space group Pbca with a = 23.561(4) Å, b = 7.064(1) Å, c = 13.018(3) Å, Z = 8; D_x = 1.387(1) g.cm^‐3 ; R = 0.073 for 1697 observed reflections [F2 ≥ 2σ(F²)]. The interesting feature is disorder in the crystal structure resulting from the existence of two isomeric molecules with interchangable carbon and sulfur positions, occuring at random but with equal probability in the structure.     

Poole‐Frenkel electrical conduction in europium oxide films deposited on Si(100)

Thin Eu₂O₃ films were prepared on Si (P) substrates to form MOS devices. The oxide crystal structure was determined by X‐ray diffraction (XRD). The electrical transport properties of the devices with amorphous and crystalline Eu oxide were investigated. The current‐voltage and current‐temperature characteristics suggest a Poole‐Frenkel (PF) type mechanism of carrier transport through the device when the applied field is more than 105 V/cm. A deviation from PF leakage current course was found and attributed to the current carrier trapping. We have also observed that, the dielectric spectra of MOS structure are different when the insulator is an amorphous or crystalline thin film. From which we calculate the relaxation time (τ) of the interface (insulator/semiconductor) dipoles. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)