Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Temperature gradient controlled growth and optical properties of Er:BaY2F8 crystals

Single crystals of Erbium (Er) doped BaY₂F₈ have been obtained by the temperature gradient technique (TGT). No‐seed‐grown crystal of Er:BaY₂F₈, with the dimensions up to several centimeters, was obtained by self‐crystallization. The optimizations of various growth parameters were systemically investigated. The results indicated that the temperature gradient of 6‐7 K/mm and the cooling velocity less than 6 K/h were suitable for the crystal growth. The XRD data and the investigations on the growth striations by a stereo polarization microscope displayed that the [001] direction is the dominating direction for the crystal growth. The crystal grown by TGT often cracks along with the (100) plane, which is caused by the excessive decrease of the temperature during the crystal growth, for there is a rapid change in the thermal expansion curve of the BaY₂F₈ crystal in the temperature range from 800 °C to 900 °C. The spectral properties of Er:BaY₂F₈ single crystals have been studied and the effects of frequency up‐conversion of the crystals are reported. Spectral data suggest that the quality of Er:BaY₂F₈ crystal obtained by TGT method is good and the crystal has the potential application in laser devices. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of magneto‐optical YFeO3 crystals

The floating zone growth of magneto‐optical crystal YFeO₃ has been investigated. The polycrystalline feed rod was prepared by a pressure of 250MPa and sintering at about 1500°C. A crack‐ free YFeO₃ single crystal has been successfully grown. The crystal preferred to crystallize along <100> direction with about 10° deviation. The X‐ray rocking curve of the crystal has a FWHM of 24 arcsec, confirming the high crystal quality of the sample. The (100) plane was etched by hot phosphoric acid and the dislocation density was about 10⁴/cm². A thin outer layer with Y₂O₃‐rich composition was found at the periphery of as‐grown crystals, which was attributed to the Fe₂O₃ evaporation during growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on large uniaxially grown benzophenone single crystals

〈110〉, 〈010〉 and 〈100〉 oriented uniaxial benzophenone crystals were grown by uniaxially solution‐crystallization method of Sankaranarayanan ‐ Ramasamy (SR). The experimental parameters involved in the present study were investigated in detail and a constant growth rate was achieved by compensating the loss of growth units in the solution. A transparent uniaxial benzophenone crystal having dimension of 500 mm length and 55 mm diameter was grown at room temperature for the first time in the literature. In contrast to the conventional solution growth method, the growth rate along each direction was measured at ease during the respective growth experiment by monitoring the elevation of the solid‐liquid interface and found to be 2, 4 and 6 mm/day along the 〈110〉, 〈010〉 and 〈100〉 directions respectively for a chosen supersaturation. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In situ atomic force microscopy studies of growth mechanisms and surface morphology of zinc thiourea sulfate crystals

In situ atomic force microscopy (AFM) has been utilized in studies of the growth mechanism on the (100) face of zinc tris (thiourea) sulphate (ZTS) crystals growing from solution. The growth on the (100) face of pure ZTS crystal is mainly controlled by two dimensional (2D) nucleation mechanisms, under which the hillock is formed through layer‐by‐layer growth. It is easier to form 2D nuclei at edge dislocation and the apex of steps. The growth of 2D nucleus is in accord with nucleation‐spreading mode. The growth rate along the 〈010〉 direction is faster than that along 〈001〉 direction, both of which increase firstly and then decrease with the spread of nucleus. The kinetic coefficients of one nucleus have been roughly estimated to be 3.6 × 10⁻⁴ cm/s and 1.8 × 10⁻⁴ cm/s in two directions, while the activation energy E was calculated to be 53.7 kJ/mol and 55.4 kJ/mol, respectively. The 2D nuclei can be generated under lower supersaturation with the addition of EDTA. If there are several hillocks growing together, step bunches will form when the steps moving in the same direction meet each other, while the meeting of steps that move in the inverse direction will result in the separation of steps. The ability of nucleation of edge dislocation outcrops are different even they are close to each other on the same surface. When the nucleus was generated at the edge dislocation sites, it cannot spread speedily until finishes an “incubation period”. Moreover, the detour of microsteps was observed due to the existence of pits. If the microcrystals attached on the surface block the step advancement, or leave the surface or are covered by the macrosteps, the pits are formed. If the macrosteps advanced across the pits, the pits will be covered and the liquid inclusions may form. However, if the microcrystal forming in the pit grow up and expose on the surface, the pit will not be covered by macrosteps. The formation of solid inclusions may be caused by the microcrystals being embedded into the single steps which move layer‐by‐layer.     

Domain structures and etching morphologies of lithium niobate crystals with different Li contents grown by TSSG and double crucible Czochralski method

Stoichiometric lithium niobate single crystals with different Li contents have been grown both by the top‐seeded solution growth (TSSG) method from potassium containing flux and by the double crucible Czochralski (DC Cz) method. Spectroscopic properties (e.g. the UV absorption edge, Raman linewidth) and the Curie temperature measurement have been used for the characterization of the crystal composition. The double crucible Czochralski method is found to be suitable for mass production of stoichiometric LiNbO₃ with Li content larger than 49.7 mol% and homogeneity of 0.03 mol%. The domain structures and etching morphologies on negative and positive c‐surface were also investigated by chemical etching method. A new domain structure of three‐fold symmetric sectors were observed in near‐stoichiometric LiNbO₃ grown by TSSG method. The straight line arrangement hillocks on negative c‐surface and the net‐like arrangement etch lines were observed and explained by stress etching mechanism. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of zinc doping on pentaerythritol tetranitrate single crystals

In this study, the effect of zinc impurity on the organic high explosive pentaerythritol tetranitrate (PETN) single crystal has been investigated with optical microscopy and ex situ atomic force microscopy (AFM). The optical images show that the crystal shape has a transition with a predictable trend from long crystal to compact one as the zinc concentration is increased. Also, the 2‐dimentional (2‐D) growth hillocks are observed clearly on (110) face with contact AFM. The crystal growth occurs on monomolecular steps generated by 2‐D nucleation and followed by layer‐by‐layer expansion, and the macro‐steps formed onto the surface before spreading laterally as step bunches. The zinc ions are incorporated in growth steps as the zinc concentration is increased. The mechanism of inorganic impurity on molecular crystallization growth is still unclear. However, the incorporation of impurities may significantly affect growth kinetics of defect structure, and the bulk properties of molecular crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microscopic studies on imperfections in selected YAB single crystals

The as‐grown surface and inner structures of undoped and Nd³⁺‐, Cr³⁺‐, V³⁺‐, Ce³⁺‐, Er³⁺ and Yb³⁺ – and (Er³⁺ + Yb³⁺) – doped yttrium aluminum borate (YAB) single crystals grown from (K₂Mo₃O₁₀ + B₂O₃) flux by spontaneous crystallization or top seeded solution growth (TSSG) technique, were investigated using optical and scanning electron microscopic and analytic chemical methods. Fine and rough growth hillocks of dislocational origin, growth layers, traces of inner planar defects and foreign phase crystalline debris were found and analyzed on the as‐grown faces of crystals. Irregular grains and regular block structures and foreign phase inclusions were observed and studied in the interior of the crystals. The chemical compositions measured by energy dispersive X‐ray spectrometry on perfect and imperfect micro regions are compared with those obtained by flame atomic absorption spectrometry on bulk crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of cadmium magnesium tetra thiocyanate crystals

Cadmium Magnesium Tetra Thiocyanate, CdMg(SCN)₄, [CMTC] belongs to bimetallic thiocyanate complexes. CMTC crystals has been grown by solution growth technique at room temperature. The morphologies of the grown crystals are identified by single crystal analysis. Also the Powder X‐ray Diffractogram of the crystal has been recorded and the various planes of reflection are identified. The title compound crystallizes under triclinic structure with lattice parameters a = 10.0976 Å, b = 7.5015 Å, c = 5.7720 Å and β = 90.2135°. The presence of magnesium and cadmium in the grown crystals were confirmed through Atomic Absorption Spectroscopy. The grown crystals are analysed qualitatively by Fourier Transform Infrared (FTIR) and Fourier Transform Raman spectral measurements. The transmittance spectrum of the crystal in the UV‐Visible region has been recorded and analysed. The dielectric measurements for the crystals were carried out in the microwave region. The thermal stabilities of the crystals were studied by using different thermal analyses like Thermo Gravimetric Analysis (TGA), Differential Thermal Analysis (DTA) and Differential Scanning Calorimetry (DSC). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and optical absorption studies on potassium dihydrogen phosphate single crystals

Growth of bulk nonlinear optical (NLO) single crystals gained new significance with the advent of solid‐state laser sources for opto‐electronic applications. An optically transparent crystal of potassium dihydrogen phosphate (KDP) has been grown from aqueous solution along (001) plane with the aid of modified growth assembly of Sankaranarayanan‐Ramasamy (SR) Method. The evaporation rate was controlled and single crystals of 5 mm diameter and 60 mm length with a growth rate 5 mm per day have been grown successfully. The improved transparency of grown crystal was investigated using DRS UV transmittance spectral analysis and the presence of functional groups in the grown crystal is confirmed using FTIR analysis. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Homoepitaxial growth and photoluminescence of self‐assembled In‐doped ZnS nanowire bundles

Self‐assembled In (Indium)‐doped ZnS nanowire bundles were synthesized via a thermal evaporation method without using any template. Vapor ‐ solid homoepitaxial growth was found to be the key reason for the formation of close‐packed nanowire bundles grown on the surface of microscale sphere‐shaped ZnS crystal. X‐ray diffraction (XRD), selected area electron diffraction (SAED), and transmission electron microscopy (TEM) analysis demonstrate that the In‐doped ZnS nanowires have the cubic structure, and there are numerous stacking faults along the <111> direction. Photoluminescence (PL) spectrum shows that the spectrum mainly includes two parts: a weak violet emission band centering at about 380 nm and a strong green emission band centering at about 510 nm. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of sulphamic acid single crystals grown by Sanakaranarayanan‐Ramasamy (SR) method

By directional solidification, single crystal of Sulphamic acid (SA) was successfully grown from aqueous solution by Sankaranarayanan‐Ramasamy (SR) method. A vertically designed L‐bend was used to avoid the effect due to spurious nucleation. A vertical bottom‐seeded ampoule was used for the growth of single crystal. A seed crystal was mounted at the bottom of the ampoule. Sulphamic acid crystals of up to 40 mm in diameter and 60 mm in length have been grown with a growth up to 10 mm per day. The grown sulphamic acid single crystal was characterized using X‐ray powder diffraction analysis, Raman, FTIR, and optical transmission studies. The dielectric behaviour was measured in the frequency range of 1 kHz–10 MHz for the temperature ranges from 30 °C to 170 °C. The sulphamic acid single crystal was also grown by conventional method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of different solvents on the habit of meta‐nitroaniline single crystals

The habit of the organic non‐linear optical material meta‐nitroaniline (mNA) crystallized from different organic solvents such as acetone, benzene, ethyl acetate, n‐hexane, methanol and toluene were studied. Solubility of mNA in these solvents at various temperatures in the range between 288 and 323 K was determined by gravimetric method. Crystals were grown by restricted evaporation of solvents method. Solutions with different solvents having different chemical nature and polarity yielded crystals with different habits: one‐dimensional needles, two‐dimensional rhombic platelets and three‐dimensional octahedral. In addition, the mNA crystals show unidirectional growth behaviour along its polar [001] direction irrespective of the solvents used. All the grown crystals were found to be orthorhombic system with point group mm2 and space group Pbc2₁ which was confirmed by powder X‐ray diffraction study. Optical transmittance study showed that the grown mNA single crystals have optical transparency in the wavelength range between 430 and 1550 nm. SHG efficiency of the grown mNA crystal was 3 times grater than KDP. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method

The growth of AlN crystals by PVT method was investigated using TaC crucible in the temperature range of 2250‐2350 °C. AlN boules with 30 mm in diameter were successfully grown on the crucible lid by self‐seeded growth. The AlN boules consist of the spontaneously nucleated AlN single crystal grains with the {1010} natural crystalline face. The fast growth rate of more than 1 mm/h was achieved. AlN crystals grown on (11 0)‐, (10 0)‐, and (0001)‐face AlN seeds were investigated. Different experimental phenomena have been observed under particular condition. The crystal grown on (11 0)‐face seed has different natural crystalline face from the seed. For the crystal grown on (10 0) or (0001) seed, the crystal natural crystalline face is same as the crystallographic orientation of the seed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Inhomogeneity of composition in near‐stoichiometric LiNbO3 single crystal grown from Li rich melt

A near‐stoichiometric LiNbO₃ single crystal has been grown by the Czochralski technique from a melt of 58.5 mol% Li₂O. Its composition homogeneity was assessed by measuring the UV absorption edge. It was found that the maximum composition difference is about 0.03 mol% in the radial direction and 0.05 mol% in the axial direction. Differential scanning calorimetry (DSC) analysis was performed on the powder from the synthesized raw material and the frozen melt after crystal growth. The analytical results indicate that, during crystal growth, the magnitude of lithium volatilization from the melt surface is more than the degree of segregation from the crystal. The volatilized lithium diffuses into the crystal to compensate for the lithium segregation in the LiNbO₃ crystal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of TGS crystals using uniaxially solution‐crystallization method of Sankaranarayanan‐Ramasamy

The recently discovered crystal growth method called uniaxially solution‐crystallization method of Sankaranarayanan–Ramasamy (SR) is modified in some aspects and used for growth of triglycine sulphate (TGS) crystals. The modification leads to the simplicity, reduction of cost and avoided the temperature fluctuations. The 〈010〉 direction of TGS is very important and used for fabrication of infrared detectors. Using this method, the 〈001〉, 〈010〉 directional crystals of TGS were successfully grown in a glass crystallizer. The grown crystal was characterized by HRXRD, UV‐Visible and dielectric studies. The results prove the suitability of the modified SR method for oriented TGS crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐quality LaCoO3 single crystal grown by optical floating zone method and its electromagnetic properties

A LaCoO₃ single crystal with 4 mm in diameter and 30 mm in length has been grown by optical floating zone method. The as‐grown crystal is highly crystalline with the rhombohedral perovskite structure (R3c) and grows parallel to the (121) direction. The room temperature resistivity of the as‐grown crystal is 0.12 Ω·cm and the insulator‐metal transition occurs around 500 K. The coercivity and the remanence of the as‐grown crystal are 5 Oe and 6.61×10^–5 μ_B/f.u. at 5 K, respectively. In 1000 Oe under zero‐field cooling, the magnetic susceptibility of the as‐grown crystal shows an upturn in a Curie tail fashion below 35 K, and appears a wave crest over the interval 55 K≤T≤90 K. In addition, a slope change of 1/χ(T) at about 12 K is observed in 50000 Oe under zero‐field cooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

沿[1-100]方向升华法生长6H-SiC单晶

本文采用升华法沿着垂直于c轴方向的[1-100]方向生长6H-SiC单晶.利用光学显微镜对晶体表面及腐蚀后的晶片进行观察,发现沿[1-100]方向生长出的单晶与传统方法沿[0001]方向生长单晶有很多的不同之处,多型对于籽晶的继承性非常强,但是在生长过程中多型夹杂不会发生,该方法生长的晶体中没有发现螺位错(微管)缺陷.     

Polyhedral stability ‐ on the growth of flat crystal faces on small molecule and protein crystals

The old standing problem of face morphology is discussed. A special emphasis is put on the macroscopically flat faces, appearing on small molecule crystals mostly during calm growth, under low supersaturations. As distinct, protein crystals are growing with macroscopically flat faces even under surprisingly high supersaturations. Explanations of these facts are suggested by considering the surface micro‐profile of crystal faces which growth is driven by screw dislocations. It is shown that, due to kinetic reasons, the tips of the growth hillocks and the valley between them have to be levelled to some extent (at least on a quasi‐atomic scale) under low enough supersaturations. The amplitude of the surface roughness has to be suppressed also due to the surface energy gain, especially under quasi‐equilibrium. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature field design,process analysis and control of SAPMAC method for the growth of large size sapphire crystals

In this paper, the relationship between quality of sapphire crystal and growing parameters of SAPMAC (Sapphire growth technique with micro‐pulling and shoulder‐expanding at cooled center) method was discussed. Optimized temperature distribution and technique control were proposed by theoretical analysis, numerical simulation computation and experimental validation to obtain large size sapphire crystals. For a‐axis crystallized direction, with 1.0‐5.0mm/h growth velocity and 10‐30K/h temperature decreasing speed, large sapphire single crystal (∅︁240mm×210mm, 27.5kg) having high optical quality was successfully grown. The absorption spectrum of standard samples was measured as well. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)