Electron‐phonon short‐range interactions mobility and p‐ to n‐type conversion in TlGaS2 crystals

The conductivity type conversion from p ‐ to n ‐type at a critical temperature of 315 K in TlGaS₂ crystals is observed through the Hall effect measurements in the temperature range of 200–350 K. The analysis of the temperature‐dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m ₀ and 0.23m ₀, respectively. In addition, the temperature‐dependent Hall mobility is found to decrease with temperature following a logarithmic slope of ∼1.6. The Hall mobility in the n ‐region is limited by the electron‐phonon short‐range interactions scattering with an electron‐phonon coupling constant of 0.21. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS_0.5Se_0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×10¹⁷ and 4.1×10¹⁶ cm^‐3, respectively, and an electron effective mass of 0.41 m₀. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.     

Carrier Transport Properties of InS Single Crystals

The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature‐dependent Hall effect measurements revealed a carrier effective mass of 0.95 m₀, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.     

Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals

The conductivity, mobility, photoconductivity and photo response measurements in GaS_0.75Se_0.25 mixed crystals were carried out in the temperature range of 150‐450 K. The room temperature conductivity, mobility and electron concentration values were 10^‐9 (Ω‐cm)^‐1, 48 cm²V^‐1s^‐1 and ∼10⁹ cm^‐3, respectively. Two donor levels were obtained from temperature‐dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor‐single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7 × 10¹⁴ and 5.3 × 10¹³ cm^‐3, respectively. The mobility‐temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo‐response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent‐light intensity dependence in these crystals obeys the power law, I_ph ∝ ϕ^γ with γ between 1.7 and 2.0 for various applied fields and temperatures. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal Data,Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8 Single Crystals

The X‐ray diffraction has revealed that CuIn₅S₈ is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn₅S₈ crystals are measured in the temperature range of 50‐400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of ∼1.35 eV at 0 K, a carrier effective mass of 0.2 m₀ , an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.     

High Electric Field Transport In (TMTSF)2 Pf6 [Bis-Tetramethyltetraselenafulvalene Hexafluorophosphate] at Low Temperatures

We obtain electron and hole mobilities from the measured Hall mobility of (TMTSF)₂ PF₆. At 4K these are greater than 10⁶cm²/Vsec and agree with the mobility calculated for acoustic phonon scattering. The initial increase of conductivity in dc fields found at low temperatures in this material can be accounted for by single particle effects, specifically heating of the carriers by the field. To explain further increases we suggest that the gap is spatially nonuniform. This could be accounted for by dislocations.     

Effektive Masse und Beweglichkeit der Löcher in p-ZnSiAs2

The density of states effective mass of the valence band and impurity parameters in p-ZnSiAs₂ were determined from the temperature dependence of the Hall coefficient. The density of states effective mass of holes in ZnSiAs₂ is (0.21 ± 0.03) m₀. Three acceptor levels located at 15 meV, 40 meV and 200 meV upper the valence band edge were found. A mobility analysis was carried out taking into account the interaction of the current carriers with the large number of longitudinal optical branches existing in chalcopyrite structure. The experimental values are in good accordance with the theoretical mobility curves in the temperature range from 77 K up to 600 K.     

Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal

Electrical conductivity (σ) and Hall coefficient (R_H) of single crystal grown from the melt have been investigated over the temperature range from 398 K to 673 K. Our investigation showed that our samples are p-type conducting. The dependence of Hall mobility an charge carrier concentration on temperature were presented graphically. The forbidden energy gap was calculated and found to be 1.79 eV. The ionization energy of impurity level equals 0.32 eV approximately. At 398 K the mobility equals to 8670 cm² V⁻¹ s⁻¹ and could described by the law μ = aTⁿ (n = 1.6) in the low temperature range. In the high temperature range, adopting the law μ = bT^–m (as m = 1.67), the mobility decreases. This result indicates that in the low temperature range the dominant effect is scattering by ionized impurity atoms, whereas in the high temperature range the major role is played by electron scattering on lattice vibrations (phonons). At 398 K the concentration of free carriers showed a value of about 1.98 × 10⁷ cm⁻³.     

Photoelectronic and electrical properties of CuIn5S8 single crystals

To identify the impurity levels in CuIn₅S₈ single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50–460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent‐illumination intensity dependence (F) follows the law I_phαF^γ, with γ being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, τ_n, is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, τ_n decrease with decreasing illumination intensity. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere

Colorless transparent prismatic crystals (0.5‐2.0 mm long) and hopper crystals (1.0‐2.5 mm long) of GaN were prepared by heating a Ga melt at 800°C in Na vapor under N₂ pressures of 7.0 MPa for 300 h. The photoluminescence (PL) spectrum of a prismatic crystal at 4 K showed the emission peaks of neutral donor‐bound exciton (D⁰‐X) and free exciton (X_A) at 3.472 eV and 3.478 eV, respectively, in the near band edge region. The full‐width at half‐maximum (FWHM) of (D⁰‐X) peak was 1.9 meV. The emission peaks of a donor–acceptor pair transition (D⁰‐A⁰) and its phonon replicas were observed in a lower energy range (2.9‐3.3 eV). The emission peaks of the D⁰‐A⁰ and phonon replicas were also observed in the cathodoluminescence (CL) spectrum at 20 K. The (D⁰‐X) PL peak of a hopper crystal at 4 K was at 3.474 eV (2.1 meV higher), having a FWHM of 6.1 meV which was over 3 times larger than that of the prismatic crystal. A strong broad band with a maximum intensity around 1.96 eV was observed for the hopper crystals in the CL spectrum at room temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and electrical properties of liquid phase epitaxial layers of GaxIn1-xP lattice-matched to GaAs substrates

From the measurement of the evaporation rate of phosphorus the favourable conditions for the layer growth were determined. Further, we have studied the influence of zinc and silicon on the growth and the morphology. The mobilities, the electron and hole concentrations in the temperature range from 77 to 300 K are presented. In the Si-doped samples we could not find a correlation between the silicon concentration in the melt and the donor concentrations in the layer. An estimation of the acceptor ionization energy in Zn-doped samples yields E_A = (15 ± 4) meV.     

On a Hypothesis on the Molecule Vacancies in PbTe

The temperature dependence of the current carriers mobility in SnTe(I) and PbTe (I) synthesized in presence of SnI₂ or PbI₂ respectively was studied. An experimental formula was established, showing that current carriers scattering in SnTe(I) is due to vacancies at constant Hall coefficient. For PbTe (I) crystallized from tellurium solution by traveling heater method the mobility is high (between 2.10⁴ and 4.10⁴ cm²/Vs) and the Hall coefficient is constant within the interval 77 K–450 K. Only within 77 K–160 K interval the current carriers scattering is due to vacancies. A hypothesis is proposed based on the presence of molecular vacancies (V_pbTe). These vacancies do not change electron gas concentration but do change the carriers mobility. Specimens with a negligibly low lead atoms vacancies Concentration were investigated. An empirical expression is established which shows that their mobility depends on molecular vacancies concentration and explains observed weak temperature influence upon carriers mobility. These results are obtained only from Hall coefficient and electric conductivity measurements within the 77 K–160 K temperature interval.     

Influence of photonic excitations on the electrical parameters of TlInS2 crystals

The photo‐excitation effect on the current transport mechanism in TlInS₂ crystals has been studied by means of dark and illuminated conductivity measurements. The temperature‐dependent electrical conductivity analysis in the temperature region of 110‐340 K revealed the domination of the thermionic emission and the thermally assisted variable range hopping (VRH) of charge carriers above and below 160 K, respectively. Above 160 K, the conductivity activation energies in the dark are found to be 0.28 and 0.15 eV in the temperature regions of 340‐240 K and 230‐160 K, respectively. In the temperature region of 110‐150 K, the dark variable range hopping analysis revealed a density of localized states of 1.99×10²² cm^–3eV^–1, an average hopping distance of 0.53 nm and an average hopping energy of 79.65 meV. When the sample was photo‐excited, the values of the conductivity activation energies, the density of localized states near the Fermi level and the average hopping energy were observed to decrease sharply with increasing illumination intensity. On the other hand, the average hopping distance increased with rising illumination intensity. Such behaviours were attributed to the Fermi level shift and/or trap density reduction by electron‐hole recombination. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Well parameters of two‐dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Resistivity and Hall effect measurements were carried out as a function of magnetic field (0‐1.5 T) and temperature (30‐300 K) for Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two‐dimensional electron gas (2DEG) channel located at the Al_0.88In_0.12N/GaN interface with an AlN interlayer and a two‐dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al_0.88In_0.12N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al_0.88In_0.12N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Cd‐Doping Effects on The Properties of Polycrystalline α‐In2Se3 Thin Films

The X‐ray diffraction has revealed that the polycrystalline hexagonal structured α‐In₂Se₃ thin films grown at substrate temperature of 200 °C with the unit cell parameters a = 4.03 Å and c = 19.23 Å becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a = 4.00 Å and c = 16.63 Å by Cd‐doping. The analysis of the conductivity temperature dependence in the range 300‐40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd‐doped samples, respectively. The photocurrent (I_ph) increases with increasing illumination intensity (F) and decreasing temperature up to a maximum temperature of ∼100 K, below which I_ph is temperature invariant. It is found to have the monomolecular and bimolecular recombination characters at low and high illumination intensities, respectively. The Cd‐doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of I_ph on F at low illumination intensities.     

Electrical transport properties of CdTe:Sb films

Hall coefficient and dc conductivity measurements are made on p-type CdTe:Sb films grown by vacuum evaporation technique on glass substrate. The grain boundary potential barrier, which is found mainly to limit the mobility of carriers is calculated as a function of film thickness. The n-type conduction is found to dominate over p-type conduction above about 330 K. The ratio of electron to hole mobility is also calculated.     

Electric Characterization of Indium Sesquiselenide Single Crystals

Conductivity, Hall-effect measurements were performed on δ-phase In₂Se₃ single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In₂Se₃ had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R_H11 = 1.36 × 10⁴ cm³/coul, σ₁₁ = 4.138 × 10⁻³ Ω⁻¹ cm⁻¹ and R_H = 66.55 × 10⁴ cm³/coul, σ = 0.799 × 10⁻³ Ω⁻¹ cm⁻¹ for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.     

Influence of substrate orientation on the electrical properties of CuInSe2 epitaxial layers on GaAs substrates

The electrical properties of CuInSe₂ epitaxial layers on (111)A-, (110)-, and (100)-oriented GaAs substrates are investigated. At substrate temperatures T_sub ≧ 820 K the p-type conductivity observed is governed by an acceptor state with an ionization energy of about 110 meV independent of the substrate orientation. At T_sub ≦ 770 K three different acceptor states are found in dependence on the substrate orientation: 390 meV for (111)A-, 110 meV for (110)-, and a very shallow acceptor for (100)-oriented substrates. A possible correlation between these acceptor states and intrinsic defects is proposed.