Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum

Investigation on residual Al, B, and N co-doping of 4H-SiC epitaxial layers is reported. The layers were produced by sublimation epitaxy in Ta growth cell environment at different growth temperatures and characterized by secondary ion mass spectrometry. The vapor interaction with Ta was considered through calculations of cohesive energies of several Si-, Al-, B-, and N-containing vapor molecules and also of diatomic Ta–X molecules. An analysis of kinetic mechanisms responsible for impurity incorporation is performed. Among residuals, B exhibits a stronger incorporation dependence on temperature and growth at lower temperatures can favor B decrease in the layers. Under the growth conditions in this study (Ta environment and presence of attendant Al and N), B incorporation is assisted by Si₂C vapor molecule. Boron tends to occupy carbon sites at higher temperatures, i.e. higher growth rates.     

Temperature dependence of photoluminescence from ordered GaInP2 epitaxial layers

The temperature behavior of the integrated intensity of photoluminescence (PL) emission from ordered GaInP₂ epitaxial layer was measured at temperatures of 10 ‐ 300 K. Within this temperature range the PL emission is dominated by band‐to‐band radiative recombination. The PL intensity temperature dependence has two regions: at low temperatures it quenches rapidly as the temperature increases, and above 100 K it reduces slowly. This temperature behavior is compared with that of disordered GaInP₂ layer. The specter of the PL emission of the disordered layer has two peaks, which are identified as due to donor‐accepter (D‐A) and band‐to‐band recombination. The PL intensity quenching of these spectral bands is very different: With increasing temperature, the D‐A peak intensity remains almost unchanged at low temperatures and then decreases at a higher rate. The intensity of the band‐to‐band recombination peak decays gradually, having a higher rate at low temperatures than at higher temperatures. Comparing these temperature dependencies of these PL peaks of ordered and disordered alloys and the temperature behavior of their full width at half maximum (FWHM), we conclude that the different morphology of these alloys causes their different temperature behavior. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Cu/In ratio on properties of CuInSe2 thin films prepared by selenization of Cu‐In layers

In this paper, the chalcopyrite CuInSe2 thin films were fabricated from a selenization of electrodeposited Cu‐In layers. In this study, the electrodeposition time of the In layer was set, but that for the Cu layer was not. The thin films were selenized in a sealed glass tube with pure Se powder by three different Cu layer samples at various electrodeposition times at 500 °C for 2 hours. An FE‐SEM image of the sample shows that the copper‐rich product has irregular agglomerates with a dense surface. The X‐ray diffraction patterns show CuInSe₂ peaks for all samples. However, the X‐ray diffraction pattern reveals CuSe₂ peaks when the electrodeposition time of the Cu layer increases. On the other hand, the band gap (E_g) of the samples decreases from 1.15 to 1.07 eV when the Cu/In ratio increases.     

P掺杂6H-SiC的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波法,计算未掺杂与P替换Si、C以及P间隙掺杂6H-SiC的电子结构与光学性质。结果显示未掺杂的6H-SiC是带隙为2.052 eV的间接带隙半导体,P替换Si、C掺杂以及P间隙掺杂6H-SiC带隙均减小,分别为1.787 eV、1.446 eV和0.075 eV,其中P间隙掺杂带隙减小幅度最大。P替换掺杂6H-SiC使得费米能级向导带移动并插入导带中,呈n型半导体。P间隙掺杂价带中的一条能级跨入费米能级,因此在禁带中出现一条P 3p杂质能级,P间隙掺杂6H-SiC转为p型半导体。替换与间隙掺杂使得6H-SiC的介电函数实部增大,介电函数虚部、吸收光谱、反射光谱与光电导率红移,其中P间隙掺杂效果最佳。通过P掺杂材料的电导率增强,对红外波段的利用率明显提高,为6H-SiC在红外光电性能方面的应用提供有效的理论依据。     

Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1‐x) mixed crystals (0.25 ≤ x ≤ 1)

The optical properties of the TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400–1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS_2xSe_2(1‐x)mixed crystals. The transmission measurements carried out in the temperature range of 10–300 K revealed that the rates of change of the indirect band gaps with temperature are γ = –9.2×10^–4 eV/K, –6.1×10^–4 eV/K, –4.7×10^–4 eV/K and –5.6×10^–4 eV/K for TlInS₂, TlInS_1.5Se_0.5, TlInSSe and TlInS_0.5Se_1.5 crystals, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of Er3+ doping concentration and calcination on fluorescence properties of La3Ga5.5Nb0.5O14 nanocrystals

The effects of Er³⁺ doping concentration and calcination were examined on the fluorescence properties of La₃Ga_5.5Nb_0.5O₁₄ (Er:LGN) nanoparticles for the first time. High quality Er:LGN nanoparticles were synthesized by sol‐gel method. The room temperature fluorescence spectra showed a green emission, which can be attributed to ²H_11/2‐⁴I_15/2 and ⁴S_3/2‐⁴I_15/2 transition. The relationship between the relative emission intensity and the doping concentration was investigated. The maximum of the Er³⁺ doping concentration in LGN nanopowders is 2.0%. The fluorescent lifetime of 2.0% Er:LGN nanoparticles is 1.45ns. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of temperature on the microcrystalline structure of thermally evaporated Sb2S3 thin films

Thin films of antimony trisulfide (Sb₂S₃) were prepared by thermal evaporation under vacuum (p=5×10^–5 torr) on glass substrates maintained at various temperatures between 293 K and 523 K. Their microstructural properties have obtained by transmission electron microscopy (TEM). The electron diffraction analysis showed the occurrence of amorphous to polycrystalline transition in the films deposited at higher temperature of substrates (523 K). The polycrystalline thin films were found to have an orthorhombic structure. The interplanar distances and unit‐cell parameters were determined by high‐resolution transmission electron microscopy (HRTEM) and compared with the standard values for Sb₂S₃. The surface morphology of Sb₂S₃ thin films was investigated by scanning electron microscopy (SEM). The optical transmission spectra at normal incidence of Sb₂S₃ thin films have been measured in the spectral range of 400–1400 nm. The analysis of the absorption spectra revealed indirect energy gaps, characterizing of amorphous films, while the polycrystalline films exhibited direct energy gap. From the photon energy dependence of absorption coefficient, the optical band gap energy, E_g, were calculated for each thin films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

低表面浓度磷掺杂的高方阻P-N结发射极制备工艺

制备P-N结发射极的常规扩散工艺主要包括预淀积和高温推阱两个步骤。本文采用在高温推阱之后施加一步保温过程的工艺方案,在p型多晶硅片上制备了低表面浓度磷掺杂的高方阻发射极,研究了不同保温温度对P-N结发射极的方阻和磷原子掺杂分布的影响。结果表明,当完成高温推阱后,在650~750 ℃温度范围内施加保温工艺所得P-N结的方阻值反向升高,同时二次离子质谱(SIMS)测试结果表明,硅片表层区域的磷原子掺杂浓度相应降低。与常规扩散工艺相比,采用在700 ℃下保温15 min时所得P-N结的方阻升高约3.2 Ω/□,所得相应太阳能电池光电转换效率E_ff达到18.69%,比产线工艺提高约0.23%。     

The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature - An electron microscopic study

We investigated epitaxial silicon films deposited on differently oriented substrates by pulsed magnetron sputtering at temperatures of 500-550 °C. Our scanning and transmission electron microscopic as well as electron backscattering investigations show that epitaxial films grow not only on (1 0 0)-oriented substrates, but also on (2 1 0)-, (4 1 1)- and (3 1 1)-oriented ones. A change to the (1 0 0) orientation is found for the growth on (1 1 1)- , (3 2 1)- and close to (1 1 0)-oriented substrates. For these orientations transmission electron microscopic investigations show stacking faults, microtwins and small amorphous inclusions in a region starting at the substrate-film interface up to thicknesses of 150-200 nm. With increasing film thickness above 200 nm the crystalline perfection of the epitaxial layers improves.     

单晶金刚石p型和n型掺杂的研究

超宽禁带半导体材料金刚石在热导率、载流子迁移率和击穿场强等方面表现出优异的性质,在功率电子学领域具有广阔的应用前景。实现p型和n型导电是制备金刚石半导体器件的基础要求,其中p型金刚石的发展较为成熟,主流的掺杂元素是硼,但在高掺杂时存在空穴迁移率迅速下降的问题;n型金刚石目前主流的掺杂元素是磷,还存在杂质能级深、电离能较大的问题,以及掺杂之后金刚石晶体中的缺陷造成载流子浓度和迁移率都比较低,电阻率难以达到器件的要求。因此制备高质量的p型和n型金刚石成为研究者关注的焦点。本文主要介绍金刚石独特的物理性质,概述化学气相沉积法和离子注入法实现金刚石掺杂的基本原理和参数指标,进而回顾两种方法进行单晶金刚石薄膜p型和n型掺杂的研究进展,系统总结了其面临的问题并对未来方向进行了展望。     

高掺锌/镁铌酸锂薄膜的光电性质

室温下采用射频磁控溅射(RFMS)技术在玻璃与硅基板上分别沉积了纯铌酸锂LN薄膜、高掺锌(6%,摩尔分数,下同)LN∶ZnO薄膜和高掺镁(5%)LN∶MgO薄膜,并在575 ℃条件下退火进一步提高薄膜的结晶度。通过原子力显微镜(AFM)、X射线衍射(XRD)、紫外可见吸收(UV-Vis)和椭偏仪等测试研究了三种铌酸锂薄膜的形貌、结构和光学性质。XRD分析表明掺杂铌酸锂薄膜和纯铌酸锂薄膜具有相同的生长取向,AFM、XRD、UV-Vis测试结果表明,掺杂将增大铌酸锂薄膜的晶粒尺寸,光学带隙的红移现象与晶粒尺寸相关,且掺Mg的影响大于掺Zn。此外利用霍尔效应测试仪研究了LN、LN∶ZnO和LN∶MgO薄膜的电学性质,测试结果表明三种薄膜均为n型半导体,其中LN∶MgO薄膜电导率的变化趋势不同于LN∶ZnO和LN薄膜,且发现温度在18~50 ℃范围内,随着温度的升高,LN∶MgO薄膜的电导率变化微小,而LN∶ZnO和LN薄膜的电导率逐渐增大。     

高温扩散工艺制备带隙可调的β-(AlxGa1-x)2O3薄膜

β-(Al_xGa_1-x)₂O₃因其优异的抗击穿及带隙可调节性在现代功率器件及深紫外光电探测等领域展现出巨大的应用前景,然而传统直接生长工艺的复杂性和难度限制了其进一步的发展。因此,本文采用较为简单的高温扩散工艺在c面蓝宝石衬底上成功制备了β-(Al_xGa_1-x)₂O₃纳米薄膜。利用X射线衍射、原子力显微镜、扫描电子显微镜和紫外-可见分光光度计对其进行了表征。由于高温下蓝宝石衬底中的Al原子向Ga₂O₃层扩散,β-Ga₂O₃薄膜将转变为Al、Ga原子比例不同的β-(Al_xGa_1-x)₂O₃薄膜。实验结果显示：当退火温度从1 010℃增加到1 250℃时,薄膜中Al的平均含量从0.033增加到0.371;当退火温度从950℃增加到1 250℃时...     

Structural and optical properties of Mg‐doped ZnO thin films prepared by a modified Pechini method

ZnO thin films with different Mg doping contents (0%, 3%, 5%, 8%, 10%, respectively) were prepared on quartz glass substrates by a modified Pechini method. XRD patterns reveal that all the thin films possess a polycrystalline hexagonal wurtzite structure. The peak position of (002) plane for Mg‐doped ZnO thin films shifts toward higher angle due to the Mg doping. The crystallite size calculated by Debey‐Scherrer formula is in the range of 32.95–48.92 nm. The SEM images show that Mg‐doped ZnO thin films are composed of dense nanoparticles, and the thickness of Mg‐doped ZnO thin films with Mg doped at 8% is around 140 nm. The transmittance spectra indicate that Mg doping can increase the optical bandgap of ZnO thin films. The band gap is tailored from 3.36 eV to 3.66 eV by changing Mg doping concentration between 3% and 10%. The photoluminescence spectra show that the ultraviolet emission peak of Mg‐doped ZnO thin films shifts toward lower wavelength as Mg doping content increases from 3% to 8%. The green emission peak of Mg‐doped ZnO thin films with Mg doping contents were 3%, 8%, and 10% is attributed to the oxygen vacancies or donor‐acceptor pair. These results prove that Mg‐doped ZnO thin films based on a modified Pechini method have the potential applications in the optoelectronic devices.     

Growth and Characterisation of (CuInTe2)1‐x(2 ZnTe)x Solid Solution Single Crystals

The crystal structure as well as the optical properties in the band gap region of (CuInTe₂)_1‐x(2 ZnTe)_x solid solution single crystals grown by directional freezing have been studied. The lattice constants exhibit a linear dependence on crystal composition. The chalcopyrite‐sphalerite phase transition was observed between x = 0.3 and x = 0.4°. The variation of the band gap with respect to crystal composition can be described by a quadratic expression.     

Effects of annealing on structural,electrical and optical properties of AgGa(Se0.5S0.5)2 thin films deposited by using sintered stoichometric powder

The structural, electrical and optical properties of AgGa(Se_0.5S_0.5 )₂ thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450–600 °C. X‐ray diffraction (XRD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 ^oC with mixed binary phases of Ga₂Se₃, Ga₂S₃, ternary phase of AgGaS₂ and single phase of S. The compositional analysis with the energy dispersive X‐ray analysis (EDXA) revealed that the as‐grown film has different elemental composition with the percentage values of Ag, Ga, Se and S being 5.58, 27.76, 13.84 and 52.82 % than the evaporation source powder, and the detailed information about the stoichometry and the segregation mechanisms of the constituent elements in the structure have been obtained. The optical band gap values as a function of annealing temperature were calculated as 2.68, 2.85, 2.82, 2.83, and 2.81 eV for as‐grown, annealed at 450, 500, 550, and 600 °C samples, respectively. It was determined that these changes in the band gap are related with the structural changes with annealing. The temperature dependent conductivity measurements were carried out in the temperature range of 250‐430 K for all samples. The room temperature resistivity value of as‐grown film was found to be 0.7x10⁸ (Ω‐cm) and reduced to 0.9x10⁷ (Ω‐cm) following to the annealing. From the variation of electrical conductivity as a function of the ambient temperature, the activation energies at specific temperature intervals for each sample were evaluated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

An interesting recent development in the Group III nitrides is the growth of InAlN lattice matched to GaN, with applications in distributed Bragg reflectors (DBRs), high electron mobility transistors (HEMTs) and as etch-layers. This work presents a systematic study of the effects of changing the key growth conditions of ammonia flux and growth temperature in InAlN growth by metal-organic vapour phase epitaxy (MOPVE) and describes our current optimised parameter set. We also particularly concentrate on the details of surface morphology assessed by atomic force microscopy (AFM). The nanoscale surfaces are characterised by low hillocks and dislocation pits, while at a larger scale microscopic indium droplets are also present. However, these droplets are eliminated when the layers are capped with GaN. Other trends observed are that increasing the growth temperature will lower the indium incorporation approximately linearly at a rate of approximately 0.25% per °C, and that increasing the ammonia flux from 44.6 to 178.6 mmol min⁻¹ increased the indium incorporation, but further increases to 446 mmol min⁻¹ did not result in any further increase.     

Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si‐C‐H‐Cl

In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condensed phases C, Si and SiC have been determined. The optimal conditions giving the maximum yield of silicon carbide by pyrolysis of mixture of volatile compounds of carbon and silicon have been defined. The thermodynamic analysis of the examined system showed that the increasing of the content of hydrogen in the initial mixture allows to decrease the optimal temperature for obtaining of silicon carbide by the method of pyrolysis and essentially to increase its maximum possible yield. (© 2008 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High resolution neutron and X‐ray diffraction studies as a function of temperature and electric field of the ferroelectric phase transition of RDP

Neutron and high resolution X‐ray diffraction investigations on perfect single crystals of RbH₂PO₄ (RDP), a hydrogen bonded ferroelectric of KDP type are reported. The results of crystal structure analysis from diffraction data, below and above the paraelectric ‐ ferroelectric phase transition, support a disorder ‐ order character of [PO₄H₂]^‐‐groups. The tetragonal symmetry of the paraelectric phase with the double well potential of the hydrogen atoms obtained by diffraction, results simply from a time‐space average of orthorhombic symmetry. According to the group ‐ subgroup relation between the tetragonal space group I42d and the orthorhombic Fdd2 a short range order of ferroelectric clusters in the tetragonal phase is observed. With decreasing temperature the ferroelectric clusters increase and the long range interaction between their local polarisation vectors leads to the formation of lamellar ferroelectric domains with alternating polarisation directions at T_C = 147 K. From the high resolution X‐ray data it is concluded that below T_C the ferroelastic strain in the (a,b)‐plane leads to micro‐angle grain boundaries at the domain walls. The tilt angle is enhanced by an applied electric field parallel to the ferroelectric axis. The resulting dislocations at the domain walls persist in the paraelectric phase leading to a memory effect for the arrangement of twin lamellae. With increased electric field the phase transition temperature T_C is decreased. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)