Thin overlayer influence on electrophysical properties of nickel films

In this work it is experimentally investigated a size effect in temperature coefficient of resistance (TCR) of Ni films with Cu and SiO₂ thin overlayer. The parameters of electrical transfer (the mean‐free path of electron, the reflectivity coefficient of the external surfaces, the reflection and transmission coefficients at the grain boundary) were calculations. Decreasing of the value of the reflectivity coefficient is due to the change of the surface microrelief. It is show that the value of TCR decreases caused by the conditions of scattering changes on internal and external boundaries. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Conductivity and temperature coefficient of resistance of multilayered polycrystalline films

We calculate the electric conductivity and the temperature coefficient of resistance (TCR) of a multilayered film consisting of the alternating polycrystalline metal layers of different thickness and purity within the relaxation time formalism. In the case of Cr, Cu and Co‐based multilayered films we perform verification of our analytical formulas and demonstrate a qualitative agreement between the theoretically calculated values of the TCR and experiment. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrophysical properties of Ni/V and Cr/Fe multilayer films

Results of experimental researches of electrophysical properties of Multilayer film systems Ni/V, and Cr/Fe which was formed on the basis of nanocrystals (V, Cr and Fe) and high dispersed Ni films are presented. It is carried out comparisons of experimental and calculated on the basis ratio for films alloy (Cr/Fe) and semiphenomenological model (Ni/V) results. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optoelectrical properties of Ga‐doped ZnO semiconductor thin films grown by magnetron sputtering

Transparent conductive gallium‐doped zinc oxide (Ga‐doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), spectrophotometer, four‐point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c‐axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga‐doped ZnO film grown at the substrate temperature of 400 °C has the highest figure of merit of 1.25 × 10⁻² Ω⁻¹, the lowest resistivity of 1.56 × 10⁻³ Ω·cm and the highest surface energy of 32.3 mJ/m².     

Effect of annealing temperature on the structural and optical properties of amorphous Sb2Te2Se thin films

Thin films of Sb₂Te₂Se were prepared by conventional thermal evaporation of the presynthesized material on Corning glass substrates. The chemical composition of the samples was determined by means of energy‐dispersive X‐ray spectrometry. X‐ray diffraction studies on the as‐deposited and annealed films revealed an amorphous‐to‐crystalline phase transition. The as‐deposited and annealed films at T _a = 323 and 373 K are amorphous, while those annealed at T _a= 423 and 473 K are crystalline with a single‐phase of a rhombohedral crystalline structure as that of the source material. The unit‐cell lattice parameters were determined and compared with the reported data. The optical constants (n , k ) of the investigated films were determined from the transmittance and reflectance data at normal incidence in the spectral range 400–2500 nm. The analysis of the absorption spectra revealed non‐direct energy gaps, characterizing the amorphous films, while the crystalline films exhibited direct energy gaps. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga‐doped ZnO thin films prepared by rf magnetron sputtering

Effects of substrate temperature and atmosphere on the electrical and optical properties of Ga‐doped ZnO thin films deposited by rf magnetron sputtering were investigated. The electrical resistivity of Ga‐doped ZnO (GZO) films decreases as the substrate temperature increases from room temperature to 300°C. A minimum resistivity of 3.3 × 10^–4 Ω cm is obtained at 300°C and then the resistivity increases with a further increase in the substrate temperature to 400°C. This change in resistivity with the substrate temperature is related to the crystallinity of the GZO film. The resistivity nearly does not change with the O₂/Ar flow ratio, R for R < 0.25 but increases rapidly with R for R > 0.25. This change in resistivity with R is also related to crystallinity. The crystallinity is enhanced as R increases, but if the oxygen partial pressure is higher than a certain level (R = 0.25 ± 0.10) gallium oxides precipitate at grain boundaries, which decrease both carrier concentration and mobility. Optical transmittance increases as R increases for R < 0.75. This change in transmittance with R is related to changes in oxygen vacancy concentration and surface roughness with R. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Three‐dimensional flow in a thin annular layer of silicon melt with bidirectional temperature gradients

Bidirectional temperature gradients coexist virtually in surface tension driven flows. However, the simulations have been performed to the flow with only one temperature gradient. A series of 3 D numerical simulations are conducted to investigate the Marangoni‐thermocapillary flow of silicon melt in a thin annular layer with bidirectional temperature gradients. The temperature gradients are produced by the temperature difference ΔT between walls and the constant heat flux q on the bottom, respectively. When changing q, the melt presents different state evolutions at different ΔT. Furthermore, two critical q are found, one makes the minimum melt temperature higher than the crystallization temperature and the other makes the flow unsteady. Both of the critical heat fluxes decrease with increasing ΔT. q contributes more to the elevation of the melt temperature, while ΔT contributes more to the enhancement of the melt instability. In addition, the melt on the free surface flows mainly along the radial direction.     

Structural,optical and photoconductive properties of electron beam evaporated CdSxSe1‐x films

CdS_xSe_1‐x films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 – 300 °C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The root‐mean‐roughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ωcm^‐1 to 480 Ωcm^‐1 as the ‘x’ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optical properties of Mg‐doped ZnO thin films prepared by a modified Pechini method

ZnO thin films with different Mg doping contents (0%, 3%, 5%, 8%, 10%, respectively) were prepared on quartz glass substrates by a modified Pechini method. XRD patterns reveal that all the thin films possess a polycrystalline hexagonal wurtzite structure. The peak position of (002) plane for Mg‐doped ZnO thin films shifts toward higher angle due to the Mg doping. The crystallite size calculated by Debey‐Scherrer formula is in the range of 32.95–48.92 nm. The SEM images show that Mg‐doped ZnO thin films are composed of dense nanoparticles, and the thickness of Mg‐doped ZnO thin films with Mg doped at 8% is around 140 nm. The transmittance spectra indicate that Mg doping can increase the optical bandgap of ZnO thin films. The band gap is tailored from 3.36 eV to 3.66 eV by changing Mg doping concentration between 3% and 10%. The photoluminescence spectra show that the ultraviolet emission peak of Mg‐doped ZnO thin films shifts toward lower wavelength as Mg doping content increases from 3% to 8%. The green emission peak of Mg‐doped ZnO thin films with Mg doping contents were 3%, 8%, and 10% is attributed to the oxygen vacancies or donor‐acceptor pair. These results prove that Mg‐doped ZnO thin films based on a modified Pechini method have the potential applications in the optoelectronic devices.     

Microwave dielectric properties of (1‐x)La(Mg0.5Sn0.5)O3‐x(Sr0.8Ca0.2)3Ti2O7 ceramic system with a near zero temperature coefficient of resonant frequency

In this study, the microwave dielectric properties of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system prepared by the conventional solid‐state method have been investigated for application in mobile communication. It was found that the diffraction peaks of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system shift to higher angles as x increases from 0.2 to 0.4. It was also found that the X‐ray diffraction patterns of the 0.8La(Mg_0.5Sn_0.5)O₃‐0.2(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramics exhibited no significant phase difference at different sintering temperatures. The average grain size of the (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system decreased from 6.4 to 4.3 μm as the value of x increased from 0.2 to 0.4 sintered at 1550 °C for 4 h. The dielectric constant increased from 26.6 to 35.9 and the quality factor (Q×f) decreased from 31,600 to 23,300 GHz for (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system as the x value increases from 0.2 to 0.4 sintered at 1550 °C for 4 h. The average value of temperature coefficient of resonant frequency (τ_f) increased from ‐18 to +8 ppm/ K as the x value increases from 0.2 to 0.4. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High resolution neutron and X‐ray diffraction studies as a function of temperature and electric field of the ferroelectric phase transition of RDP

Neutron and high resolution X‐ray diffraction investigations on perfect single crystals of RbH₂PO₄ (RDP), a hydrogen bonded ferroelectric of KDP type are reported. The results of crystal structure analysis from diffraction data, below and above the paraelectric ‐ ferroelectric phase transition, support a disorder ‐ order character of [PO₄H₂]^‐‐groups. The tetragonal symmetry of the paraelectric phase with the double well potential of the hydrogen atoms obtained by diffraction, results simply from a time‐space average of orthorhombic symmetry. According to the group ‐ subgroup relation between the tetragonal space group I42d and the orthorhombic Fdd2 a short range order of ferroelectric clusters in the tetragonal phase is observed. With decreasing temperature the ferroelectric clusters increase and the long range interaction between their local polarisation vectors leads to the formation of lamellar ferroelectric domains with alternating polarisation directions at T_C = 147 K. From the high resolution X‐ray data it is concluded that below T_C the ferroelastic strain in the (a,b)‐plane leads to micro‐angle grain boundaries at the domain walls. The tilt angle is enhanced by an applied electric field parallel to the ferroelectric axis. The resulting dislocations at the domain walls persist in the paraelectric phase leading to a memory effect for the arrangement of twin lamellae. With increased electric field the phase transition temperature T_C is decreased. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of the Temperature Fluctuation of the Melt on β‐BaB2O4 (BBO) Crystal Growth

In this paper the effect of the growth temperature fluctuation, for instance, the transient furnace temperature variation due to a short‐term electric power supply interruption on BBO crystal growth was investigated based on the theory of temperature wave transmitting in melt and the boundary layer theory of melt. It was found that the critical width of the temperature pulse to avoid the temperature wave penetrating through the boundary layer and reaching to the growth interface at a constant rotation speed (9∼4 r/min) is 69∼150 s and the corresponding amplitude of the temperature pulse is high more than 60 °C due to the large thickness of the velocity boundary layer of the melt. This result indicates that a small transient temperature fluctuation has no significant effect on the crystal quality, and therefore implies that not only transport processes but interface growth kinetics, a two‐dimensional nucleation growth mode at the interface may also dominate the crystal growth.     

Microwave dielectric properties of La(1‐2x/3)Bax(Mg0.5Sn0.5)O3 ceramics

This study examined the potential applications of microwave dielectric properties of La_(1‐2x/3)Ba_x(Mg_0.5Sn_0.5)O₃ ceramics in rectenna. The La_(1‐2x/3)Ba_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid‐state method with various sintering temperatures. An apparent density of 6.62 g/cm³, a dielectric constant of 20.3, a quality factor of 51,700 GHz, and a temperature coefficient of resonant frequency of ‐78.2 ppm/K were obtained for La_2.98/3Ba_0.01(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

White light emission materials of self‐assembled rare earth molybdates NaRe(MoO4)2 micro‐particles: the controllable synthesis,growth mechanism and luminescent properties

The tetragonally double alkaline rare earth molybdates NaRe(MoO₄)₂ (Re = Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, and Er) micro‐particles in aqueous solution of Re(NO₃)₃ and Na₂MoO₄ were prepared hydrothermally by a facile and effective EDTA‐assisted method, and investigated by XRD, SEM, FE‐SEM, photoluminescence (PL) excitation and emission spectra. The results showed that the radii of Re ions, pH and the molar ratio of Re(NO₃)₃/Na₂MoO₄ in the synthesis solution play an important role in controlling sizes, morphologies and luminescent properties of the final products. And the possible formation mechanism for the bipyramid‐like structure and role of EDTA were discussed in detail. The microstructure and PL property of NaY_xLa_1‐x(MoO₄)₂:10%Eu³⁺ was investigated, and it showed that NaY_0.5La_0.5(MoO₄)₂ exhibited regular sphere‐like morphology and emitted the stronger red emission with better color purity than other products. When Tm³⁺, Dy³⁺ and Eu³⁺ with appropriate concentrations were used as dopants to modify this bipyramid NaY(MoO₄)₂ material, the white light emission material of NaY(MoO₄)₂:1%Tm³⁺‐11%Dy³⁺‐0.6%Eu³⁺ was successfully synthesized and its CIE chromaticity coordinates is (0.33, 0.33), which is the standard white light point. These novel white‐light‐emitting NaY(MoO₄)₂:1%Tm³⁺‐11%Dy³⁺‐0.6%Eu³⁺ with single phase would be a promising material in the WLED field.