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1.
Bi12TiO20 (BTO) single crystals doped with PbO and CeO2 were grown by the Top Seeded Solution Growth (TSSG) technique from the liquid phase with nominal compositions of 10Bi2O3 : (1–x)TiO2 : x PbO and 10Bi2O3 : (1–x)TiO2 : xCeO2 with x = 0.25 and 0.10. No growth‐related difficulties were encountered other than those typical of sillenite crystals. Samples with good optical quality were obtained and were characterized by optical absorption, dark current, spectral photocurrent dependence, optical activity and electro‐optic coefficient measurements. A comparison is made of the results of the optical measurements of doped and undoped BTO crystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

2.
Uniform capsule‐like α‐Fe2O3 particles were synthesized via a simple hydrothermal method, employing FeCl3 and CH3COONa as the precursors and sodium dodecyl sulfate (SDS) as soft template. X‐ray powder diffraction (XRD), field emission scanning electron microscopy (FE‐SEM), transmission electron microscopy (TEM), and high‐resolution transmission electron microscopy were used to characterize the structure of synthesized products. Some factors influencing the formation of capsule‐like α‐Fe2O3 particles were systematically investigated, including different kinds of surfactants, the concentration of SDS, and reaction times. The investigation on the evolution formation reveals that SDS was critical to control the morphology of final products, and a possible five‐step growth mechanism was presented by tracking the structures of the products at different reaction stages.  相似文献   

3.
Compositional segregation usually has negative effects on the growth of solid solution ferroelectric single crystals of Pb(In1/2Nb1/2)O3‐Pb(Mg1/3Nb2/3)O3‐PbTiO3 (abbr. PIN‐PMN‐PT or PIMNT). A modified Bridgman method was adopted in this work to control the segregation and improve the compositional homogeneity significantly. The characteristic of this work is to use multiround growths and gradient composition raw materials in order to keep the PbTiO3 concentration constant during the crystal growth. As an example, the two‐round growth of ternary PIN‐PMN‐PT single crystal is conducted in the same Pt crucible with gradient raw materials, where the first‐round boule was used as the seed crystal for the second‐round growth. Our results show that the as‐grown (Ф80 mm × 270 mm) PIN‐PMN‐PT crystals exhibit higher phase transition temperatures (Tc∼180 °C, Tr/t∼110 °C) and larger coercive field (Ec∼5–5.5 kV/cm), which are much better than the performances of Pb(Mg1/3Nb2/3)O3‐PbTiO3 crystals, and similar dielectric and piezoelectric performances (ε∼5000, tanδ∼1.25%, d33∼1500 pC/N, kt∼60%). And about 85 percent of the crystal boule grown by the two‐round growth technique could maintain its compositions around the morphotropic phase boundary.  相似文献   

4.
Pure and homogeneous single crystals of orthorhombic mullite‐type Bi2M4O9 (M = Al3+, Ga3+, Fe3+), and a mixed Bi2Fe1.7Ga2.3O9 crystal from an equimolar Ga/Fe composition were grown by the top seeded solution growth (TSSG) method. All these compounds melt incongruently in the range of about 800 and 1100 °C. In case of bismuth gallate and ferrate inclusion‐free crystals with dimensions up to several cubic centimeters can be grown. Limited solubility in Bi2O3 and the high steepness of the liquidus curve are the reasons for getting only small imperfect bismuth aluminate crystals. In contrast to ceramic materials preparation reported in literature, divalent calcium and strontium could not be incorporated into the mullite‐type structure during the melt growth process. Several fundamental physical properties like heat capacity, thermal expansion, heat conductivity, elastic constants, high‐pressure behavior and oxygen diffusivity were determined by different research groups using single‐crystalline samples from the as‐grown materials. Furthermore, the refractive indices of Bi2Ga4O9 were measured in the range of 0.430 and 0.700 μm. Such as many other bismuth containing compounds the refractive indices of Bi2Ga4O9 are larger than 2, and Bi2Ga4O9 is an optic biaxial positive crystal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

5.
The generation of bubble‐inclusions during BaB2O4 (BBO) crystal growth from high temperature solution has been optically observed by an in situ observation technique. It was found that bubbles are formed from the peripheries of some hexagonal defects in the (0001) plane of the growing crystal, which may be caused by the evaporation of the air‐opened interface at the high temperature. In addition, atomic force microscope (AFM) was used to investigate the distribution of bubbles. Results revealed that the bubble generation and distribution depend strongly on the microscopic structure of the interface: on a rough interface, bubbles are easily formed and grow rapidly; however, they are greatly suppressed by step trains on a vicinal interface. In the latter case, the height value of a bubble is close to that of the step, which is in the order of several tens of nanometers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

6.
4,4′‐dihydroxy‐α‐methylstilbene (DHAMS) was synthesized by condensation reaction with chloroacetone and phenol in the presence of concentrated sulfuric acid, and has been successfully grown by solution growth technique. This is the first report in the literature on the crystallization of DHAMS and exhibited the birefringent melt (liquid crystal property) of the optical properties. FTIR and FTNMR studies are in accordance with the structure. Good quality crystals were grown by slow evaporation technique by acetone as solvent. A transmission spectrum of the crystal was obtained in the region of 285 nm. The structural and optical properties were studied. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

7.
Zirconium‐doped KTiOPO4 (KTP) crystals were grown using a high temperature flux method in the K2O‐P2O5‐TiO2‐ZrF4 system. The dopant content in the single crystals with general composition KTi1‐xZrxOPO4 (where x = 0 – 0.026) strongly depends on zirconium concentration in the homogeneous melts. AES‐ICP method and X‐ray fluorescence analysis were used to determine the composition of the obtained crystals. Phase analyses of the products were performed using the powder XRD. The structures of KTiOPO4 containing different quantities of Zr were refined on the basis of single crystal XRD data. Applying ZrF4 precursor for zirconium injection into the flux allowed growing the zirconium‐doped KTP crystals at 930–750°C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

8.
Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi1‐xPbx)2Sr2Ca2Cu3O10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm3 were successfully grown. Post‐annealing under high pressure of O2 (up to 10 MPa at T = 500°C) was undertaken to enhance Tc and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔTc ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�105 A/cm2 were measured at T = 30 K and μ0H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

9.
The old standing problem of face morphology is discussed. A special emphasis is put on the macroscopically flat faces, appearing on small molecule crystals mostly during calm growth, under low supersaturations. As distinct, protein crystals are growing with macroscopically flat faces even under surprisingly high supersaturations. Explanations of these facts are suggested by considering the surface micro‐profile of crystal faces which growth is driven by screw dislocations. It is shown that, due to kinetic reasons, the tips of the growth hillocks and the valley between them have to be levelled to some extent (at least on a quasi‐atomic scale) under low enough supersaturations. The amplitude of the surface roughness has to be suppressed also due to the surface energy gain, especially under quasi‐equilibrium. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

10.
Bi2Se3‐xAsx single crystals with the As content of cAs = 0 to 2.0x1019 atoms/cm3 prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency omegap, optical relaxation time tau, and high‐frequency permittivity were determined by fitting the Drude‐Zener formulas to the reflectance spectra. It was found that the substitution of As atoms for Se atoms in the Bi2Se3 crystal lattice leads to a decrease in the omegap values. This effect is accounted for by a model of point defects in the crystal lattice of Bi2Se3‐xAsx. The dependences of the absorption coefficient K on the energy of incident photons were determined from the transmittance spectra. The optical width of the energy gap is found to decrease with increasing As content. The values of the exponent b from the relation of K ∼ lamdab for the long‐wavelength absorption edge range within the interval 2.0 to 2.3, i.e. the dominant scattering mechanism of free current carriers in Bi2Se3‐xAsx crystals is the scattering by acoustic phonons.  相似文献   

11.
The interaction in the molten system Rb2O‐P2O5‐TiO2‐NiO was investigated at different molar ratios Rb/P = 0.5‐1.3, fixed Ti/P = 0.15, Ti/Ni = 1.0 at temperature range 1073–953 K. The conditions of formation of complex phosphates RbTi2(PO4)3, Rb2Ni0.5Ti1.5(PO4)3 and RbNiPO4 have been determined. The new phosphate Rb2Ni0.5Ti1.5(PO4)3 (space group P213, a = 9.9386(2) Å) has been obtained and investigated by the single crystal X‐ray diffraction and FTIR‐spectroscopy. It has langbeinite‐like structure, that is built up from mixed (Ni/Ti)O6‐octahedra and РО4‐tetrahedra. Rubidium atoms are located in closed cavities of 3D‐framework.  相似文献   

12.
Diameter self‐control was established in Bi4Ge3O12 fiber crystal growth by micro‐pulling‐down technique. In accordance with Bi2O3‐GeO2 phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi2O3 self‐flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 μm in outer diameter. The crystals up to 400 mm long and 50‐300 μm in diameter were grown at pulling‐down rates of 0.04‐1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform (± 10%) diameter and aspect ratio up to 104 were produced without automation of the process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

13.
4‐(2‐hydroxyphenylamino)‐pent‐3‐en‐2‐one (HPAP) was synthesized and single crystals were grown by the solution growth technique using methanol as a solvent. The crystals having orthorhombic symmetry were characterized by single crystal XRD, FTIR spectroscopy, NMR spectroscopy, TGA, DSC and dielectric studies. Very less variation in the value of dielectric constant is found for different frequencies of applied field. The crystals were exhibiting positive photoconductivity and poor NLO responses. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

14.
Based on the data of X‐ray phase and microstructure analysis, the sample composition was optimized in order to provide maximum size of the textured macrograins of YBa2Cu3O7‐δ and of the crystallites in the Y2BaCuO5‐BaCuO2‐CuO, Y2Cu2O5‐BaCuO2 systems. The growth rate has been studied and the YBa2Cu3O7‐δ growth activation energy has been calculated for the samples of Y2BaCuO5+3BaCuO2+2.3CuO, Y2BaCuO5+3BaCuO2+0.6CuO, and Y2Cu2O5+3.5BaCuO2 compounds in the temperature range of 1240‐1270K for the case of use of the Y2Cu2O5 and Y2BaCuO5 precursors with an average grain diameter of 10 μm and 1mm. A crystallization mechanism of YBa2Cu3O7‐δ in the Y2BaCuO5‐BaCuO2‐CuO and Y2Cu2O5‐BaCuO2 systems in the case of different sizes of Y2BaCuO5 and Y2Cu2O5 precursor grains was proposed and validated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

15.
The boron sillenite, up to now known as the 12:1 compound Bi24B2O39 in the system Bi2O3 – B2O3 andcrystallizing in the space group I23, melts incongruently at 655 °C only about 25 K above the eutectic tie line and corresponding to a steep liquidus line. Single crystals with dimensions larger then 1 cm 3 have been successfully grown in [100], [110], and [111] direction by an improved Top Seeded Solution Growth (TSSG) technique equipped with crucible weighing, accelerated crystal rotation technique and air‐cooled pulling rod. The structure of the boron sillenite was analyzed by X‐ray diffraction method, which was possible due to the high crystalline quality achieved. A defect‐free sublattice corresponding to a Bi‐O framework is isostructural with all sillenites, but a 2 Å environment around the origin is occupied by different cations with different population coefficients. The best calculation results in the formula Bi24.5BO38.25 which is more Bi‐rich than the 12:1 assumption.  相似文献   

16.
The existence of a bismuth titanate in the range between Bi2Ti4O11 (Bi2O3 · 4 TiO2) and Bi4Ti3O12 (2 Bi2O3 3TiO2) has been investigated by X-ray diffraction of samples prepared by solid state reactions. For reaction temperatures above 1100 °C and a starting composition Bi2O3 · 2 TiO2 there appeared additional lines which could be attributed to a cubic face-centred cell with a = 10.354 Å. A multiphase Rietveld analysis based on X-ray powder diffraction data confirmed the structural model of a pyrochlore for this compound. There is evidence that this phase belongs to the group of defect pyrochlores with a Bi3+-deficiency resulting in a composition of Bi1.833Ti2O6.75.  相似文献   

17.
The equilibrium studies of the KNO3‐NH4NO3‐H2O system at 298 K have been conducted. The isotherm of solubility and the curve of distribution have been mathematically described. The parameters of the crystal lattice and the enthalpy of crystallization of the [Kx(NH4)1‐x]NO3 solid solutions as a function of their composition have been presented. The structure of salts KNO3�xNH4NO3 with different x values have been solved and refined.  相似文献   

18.
Calcium sulphate subhydrates (CaSO4 · x H2O, 0 < x ≤ 0.8) have a honeycomb‐shaped channel structure. The symmetry is either trigonal or a slight deviation thereof. Due to insufficient diffraction data and the high pseudosymmetry of the structure, it is not possible at this point to determine with certainty the specific arrangement of the water molecules in the channels. When the Fourier transformation method is used to calculate the growth form of the hemihydrate (x = 0.5), the calculated crystal form corresponds to the observed form only when the trigonal structural symmetry is largely retained. During dehydration of gypsum or, conversely, during the setting process of hemihydrate, heteroepitaxial growths of hemihydrate are observed on gypsum, or gypsum is grown heteroepitaxially on hemihydrate. The (100) faces of the hemihydrate and (010) of gypsum for the most part run parallel. Using diffraction and spectroscopic methods, it can be shown that a structural difference exists between α‐ and β‐hemihydrates, and that this difference probably accounts for the different setting behaviours. It is in this context that the presence of oxonium ions, particularly in β‐hemihydrate, found in NMR experiments is of interest. Textural studies indicated that the arrangement of gypsum crystals found in hardened gypsum is determined by the hemihydrate.  相似文献   

19.
Large cylindrical [001] direction α‐nickel sulphate hexahydrate crystal with 20 mm diameter and 140 mm length was grown from an aqueous solution by uniaxially solution‐crystallization method of Sankaranarayanan–Ramasamy (SR). The grown crystal was examined by X‐ray diffraction, UV‐Vis‐NIR spectroscopy and TGA/DTA analysis methods.  相似文献   

20.
Large Ta2O5 single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.  相似文献   

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