Study of122Te(n, γ)123 Te reaction

-rays emitted after thermal neutron capture in¹²²Te have been investigated for the first time. Energies and intensities of 80 transitions assigned to¹²³Te have been determined. Fortyeight of these transitions have been placed in the¹²³Te level scheme among 27 excited levels. Two new levels of 1808·8 and 2092·3 keV,J=(1/2, 3/2), have been observed. The neutron binding energy has been found to be 6929·1±0·5 keV. The role of direct capture mechanism has been examined.     

Study of the reaction130Te(n, γ)131Te

Energies and intensities of the gamma-ray transitions following the thermal neutron capture in¹³⁰Te are determined. The neutron separation energy for¹³¹Te is evaluated to be 5929.4 ±±0.3 keV. A statistically significant correlation between the reduced transition intensities and the spectroscopic factors from the (d, p) reactions is found. Evidence for the presence of potential capture mechanism is given.On leave fromAl-Faateh University, Physics Department, P.O. Box 13371, Tripoli, Libya.     

萃取石墨炉原子吸收光谱法测定Te(Ⅳ)和Te(Ⅵ)

本文以APDC,DDTC萃取石墨炉原子吸收光谱法测定环境水样中Te(Ⅳ)和Te(Ⅵ)的含量。方法灵敏度可达到10~(-9)级,变动系数5.6%,Te(Ⅳ)和Te(Ⅵ)的回收率分别为91.7%～105%和95%～105%,线性范围0～100ng/g。     

A μs-isomer in135Te

The deexcitation of an isomer with a half-life of 0.51±0.02 μs in ₅₂ ¹³⁵ Te₈₃ has been studied. A first level scheme of this nucleus with two protons and one neutron beyond the doubly magic¹³²Sn has been established. The most probable interpretation of the experimental data is that the 83rd neutron is coupled to the known two-proton levels of¹³⁴Te.     

High Thermoelectric Properties of PbTe Doped with Bi2Te3 and Sb2Te3

The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride (Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)2Te3 have been studied at room temperature. All the sampies exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97 x 10-4, have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of PbTe.     

A b initio calculation of the growth of Te nanorods and Bi2Te3 nanoplatelets

In this paper the growth mechanism of a Te/Bi2Te3 novel structure is studied by ab-initio calculations. The results show that the growth of Te nanorods is determined by the adsorption energy of Te atoms on different crystalline Te surfaces. The adsorption energy of Te on the Te （001） surface is 3.29 eV, which is about 0.25 eV higher than that of Te on the Te （110）. This energy difference makes the preferential growth direction along the 〈 001 〉 direction. In addition, the higher surface energy of Bi2Te3 （110） and the lattice misfit between crystalline Bi2We3 and Te along 〈 001 〉 direction are considered to explain the growth of the Bi2Te3 nanoplatelets, in which Volmer-Weber model is used. The theoretical results are in agreement with experimental observation.     

A study of the125Te(n, γ)126Te reaction with thermal neutrons

The¹²⁵Te(n, )¹²⁶Te reaction has been studied with thermal neutrons. Totally 113 lines in the -ray spectrum were assigned to radiative transitions in the¹²⁶Te isotope. The neutron separation energy of¹²⁶Te was evaluated to be 9113.8±0.1 keV. The experimental values of the partial cross sections of the primary E1-transitions were compared with predictions of the Lane-Lynn theory.     

Synthesis of α-In 2 Te 3 thin films from In/Te bilayer by Si ion irradiation

In this work, In/Te bilayer thin films were prepared using sequential thermal evaporation method and subsequently irradiated using swift heavy ions (SHIs) of 100 MeV silicon (Si) with different fluences (1×10¹³ to 5×10¹³/cm²). The inter-diffusion of In and Te layers was highly controlled by SHI irradiation and the In₂Te₃ formation capability was compared with that of the conventional annealing method. The structural as well as optical properties of a post-sintered SHI-irradiated In/Te bilayer were investigated using X-ray diffraction (XRD) measurements and UV–visible spectroscopy, respectively. We found that irradiated samples showed single-phase In₂Te₃ under post-annealed conditions at 150 °C unlike that prepared using the conventional thermal annealing method, which showed mixed phases under similar conditions. This confirms the effective inter-diffusion in bilayer films by SHI irradiation toward the formation of single-phase In₂Te₃. The estimated optical band gap energy was found to be 1.1±0.5 eV and strongly corroborated the XRD results. In addition, the estimated refractive index (n) value of the SHI-irradiated sample (～3.3) was higher than that of the sample obtained through the conventional annealing method (～2.8). This proves that SHI offers a highly compact nature even at low temperatures. This work has a wide scope for achieving single-phase alloyed films through bilayer mixing by SHI irradiation.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

ВЛИЯНИЕ СТАРЕНИЯ НА Э ЛЕКТРИЧЕСКИЕ СВОЙСТ ВА ПОЛУПРОВОДНИКОВОЙ С ИСТЕМЫ Bi2Te3-Bi2Se3

, Bi₂Te₃-Bi₂Se₃. , , , . .

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Influence of ageing on change in electrical properties of semiconducting systems of Bi₂Te₃-Bi₂Se₃

The paper describes the effect of ageing observed on a semiconducting system Bi₂Te₃ — Bi₂Se₃. It is shown that the change in electrical conductivity and thermoelectric force, which takes place during ageing, is caused by the change in concentration of the free electrons. The influence of this process on the efficiency of equipment employing the Peltier effect is analyzed.

     

Se，Te纳米线系统的结构稳定性研究

采用第一性原理计算及经验方法研究了Se，Te纳米线的结构稳定性. Se与Te的晶体是由三角Se，Te原子链构成并且链间相互作用相对较弱. 小直径的纳米线(<30?)进行了第一性原理计算； 同时对于大直径的纳米线，采用了一种只考虑了链间相互作用的经验方法. 六边形截面的构型比其他各种结构都要稳定，虽然在原子链数目的限制下无法保证其为正六边形. 该结论与被广泛接受的Se，Te纳米线的六边形稳定结构相一致. 关键词： 第一性原理 纳米线 硒 碲     

Se改良的远红外Te基硫系玻璃

将成玻性良好的Se逐步掺入到远红外Ge-As-Te玻璃中,观察其物理、光学特性的渐变过程.采用传统熔融淬冷法制备Ge_(10)As_(40)Te_(50-x)Se_x(x=0,10,20,30,40,50)系列玻璃,用X射线衍射仪、Raman光谱仪、热膨胀仪测试玻璃的内部微观结构和物化性质;用傅里叶红外光谱仪、分光光度计测试玻璃的可见/近红外与红外透射光谱等频谱性质;利用经典Tauc方程估算玻璃样品的直接和间接带隙.测试结果表明:Se含量的增加能有效提高玻璃的热稳定性,最高玻璃转化温度可达到233℃;可见/近红外短波截止边发生蓝移,光学带隙增大,透过范围广且透过性良好,红外透过率最高可达到56%,红外截止边仍然保持在20μm,当Se含量配比在低于2 mol的情况下,其热稳定性改善明显但光谱变化最小.最后,讨论了一种加还原剂Mg对该类玻璃进行提纯的方案,实验表明提纯后玻璃的透过谱线均匀平滑且无明显杂质峰.     

改善Te基热电材料与复合电极界面性能

Te基热电材料以其优异的热电性能得到科研工作者的广泛关注,但该领域关于器件制备和连接界面方面的研究尚属空白.本研究基于成分梯度、载流子浓度梯度构成的多元梯度势场对界面粒子传输过程的协同调控机制,在热电材料Te和电极Fe之间引入b(FeTe)作为阻隔层,设计制备了Te/b(FeTe)/Fe梯度连接结构,并对界面新相、接触电阻和机械性能进行了研究.研究结果表明,中间合金层b(FeTe)与热电材料和电极材料的界面组织结构致密,有效阻隔了界面元素间严重的交互扩散.该b(FeTe)-Te间形成了约40μm的反应层, b(FeTe)与Fe和Te间的接触电阻分别为4.1和7.54μW·cm2,剪切强度分别为16.11和15.63 MPa.时效温度对梯度连接结构的服役寿命和性能影响显著, Te/b(FeTe)/Fe的界面组织在553 K温度下时效15 d,界面性能保持稳定;当时效温度升至573 K时,由于高温下材料的不稳定性,导致性能随着退火时间的延长急剧下降,并在10 d之后完全破坏,这表明其最佳工作温度不得高于553 K.该梯度连接结构成功实现了抑制界面元素过度扩散、降低界面残余应力以及提升界面工作稳定性和服役寿命等目的,其设计思路和研究结果对半导体领域器件的制备具有重要借鉴意义.     

High-spin 52 117 Te: Rotational bands? Noncollective oblate

¹¹⁷Te has been studied via⁸²Se(⁴⁰Ar,5n)¹¹⁷Te, and a new, substantially extended level scheme is proposed to I53/2. Our TRS calculations suggest rotational bands, but with an experimental sensitivity of 2%, we see none. Our results differ from those of Sharma, et al, who report two isolated E2 bands. We find them less band-like, being joined at the top and changed in content and order. We suggest a noncollective oblate shape for a new 39/2^– level.This work is supported in part by the Department of Energy under Contract No.DE-AC03-76SF0098(LBL).     

强磁场对真空蒸镀制取Te薄膜的影响

采用强磁场下物理气相沉积方法,在单晶硅、玻璃板和聚乙烯（PET）基片上真空蒸发制取Te膜.结果显示在三种不同的基片上生长Te膜时,4 T强磁场能够加快Te膜的形核长大,增大Te膜的颗粒尺度,使晶粒〈011〉方向取向性增强. 关键词： 真空蒸镀 强磁场 晶面取向 Te薄膜     

Knight shift in PbTe and Pb1−xSnx Te

The importance of various contributing mechanisms to the Knight shift (K) in PbTe and Pb_1−xSn_xTe is analyzed using a perturbation theory and a general experession for K which includes the spin (K_s), orbital (K_o) and spin-orbit (K_so) contributions to the Knight shift. It is found that K_s is the dominant contribution. However, with increase in the carrier concentration, the strength of K_so increases, and becomes of the same order as K_s at high density of carriers. K_o is found to be small throughout the range of the carrier density considered. Further, it is seen that the electron-electron exchange enhancement parameter increases with increase in the carrier density. We have also considered the effect of temperature. The results and the trends obtained in our calculation are in overall agreement with the experiment for the range of the carrier density considered.     

Te元素的Anderson型多金属氧酸盐的研究进展

首先介绍多金属氧酸盐的发展,然后阐述Anderson型多金属氧酸盐的发展,最后对含Te元素的Anderson型多金属氧酸盐的研究进展进行综述。     

Specific heat of Eu x Sr1−x Te

In this paper, we report on measurements of the specific heatC of single-crystalline Eu _x Sr_1–x Te at temperatures between 60 mK and 15 K and in magnetic fields up to 6 T. Pure antiferromagnetic EuTe shows unusual critical behavior in the vicinity of the Néel temperatureT _N=9.8 K with a positive critical exponent instead of the 3d-Heisenberg exponent =–0.12. Possible reasons for this discrepancy between theory and experiment include magnetic anisotropy effects due to magnetic dipole-dipole interactions, which may give rise to a cross-over of the critical behavior very close toT _N. This anisotropy is also seen in the specific heat below 1 K where an exponential decay ofC is observed, and in the dependence of the magnetic susceptibility on the direction of the applied field. With increasing dilution of EuTe with nonmagnetic Sr, the critical behavior changes: becomes negative and decreases continuously towards –1 atxx _c. This concentration dependence of was previously observed in the diluted ferromagnetic system Eu _x Sr_1–x S. Our data thus support that the apparent change in the critical behavior depends on the degree of disorder. Samples with concentrationx lower than the critical concentrationx _c reveal spin-glass behavior in the specific heat. In addition, the dependence ofT _N on magnetic fields is discussed. The data yield a normalized magnetic phase boundaryB _c(T)/B_c(T=0) vs.T _N(B)/T_N(B=0) which is independent of concentration.     

Se替代Te对BiCuTeO电热输运性能的影响

层状氧硫族化合物由于其本征的低晶格热导率和可观的热电性能吸引了广泛关注,其中以BiCuSeO化合物的热电性能最为优异.但是,其同晶型化合物BiCuTeO,由于带隙较小且存在大量本征Cu空位,导致载流子浓度较高,热电性能较差,从而研究较少.针对BiCuTeO存在的上述问题,本文利用Se替代部分Te,以期能够展宽带隙并减少Cu空位,提高其热电性能.采用固相反应结合快速热压烧结制备了BiCuTe_(1-x)Se_xO(x=0, 0.1, 0.2, 0.3和0.4)块体热电材料,并系统地研究了该体系的电热输运性能.研究结果表明,利用Se替代Te,可以使BiCuTeO导电层化学键强度增加、带隙增大、载流子有效质量增加以及载流子散射增强,从而导致载流子浓度和迁移率同时降低,进而电导率随着Se含量增加而剧烈降低, Seebeck系数则显著增大.由于综合电输运性能恶化,功率因子随着Se含量增加而减小,导致热电优值zT随着Se含量增加而降低.最终,Se含量为x=0.1的样品,在室温和723 K时的zT值分别达到约0.3和0.7,仍然在较宽温区内保持较高的zT值.由于Se替代Te改变了BiCuTeO的能带结构,通过载流子浓度优化,有望进一步提高其热电性能.